• Korean Journal of Materials Research
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• v.2 no.3
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• pp.213-219
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• 1992

The microstructure, dopant distribution and electrical properties of the $As^{+}$ ion-implanted surface layer differ significantly depending on the methods of subsequent heat treatments, furnace annealing(FA) and rapid thermal annealing(RTA). The amorphous layer created by ion implantation was recrystallized during the thermal annealing through solid phase epitaxial (SPE) growth. The dopant distribution and electrical properties are discussed with respect to the TEM cross-sectional microstructure observed. The microstructure, dopant distribution and electrical properties depended upon especially the annealing time of the heat treatment.

• Journal of the Korean Magnetics Society
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• v.10 no.1
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• pp.1-6
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• 2000

Amorphous Fe$_{79.7}$Si$_{9.3}$B$_{9.7}$Ni$_{1.4}$ ribbon alloys were fabricated by a single roll method. To enhance D. C. bias properties, the magnetic and micro-structural changes have been investigated as the variation of annealing time and condition. The D. C. bias properties were found to be directly related to micro-structural changes. Primary ${\alpha}$-Fe dendrites with 200∼300 nm showed the best D. C. bias properties, which resulted from the magnetic domain wall pinning effect. Due to the differences of cooling rate, the growth shape and distribution of the dendrites is divided into two areas.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.18-26
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• 1999

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.

• Journal of Welding and Joining
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• v.27 no.6
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• pp.62-67
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• 2009

Friction stir welding (FSW) was carried out for Al-Mg-Si series aluminum alloys which are being used for automotive body structure. Consequently, Post weld heat treatment (PWHT) was applied to the friction stir welds to evaluate the effect of the paint baking process which is one of the automotive fabrication process on friction stir welded zone (FSWZ) in 443K for 1.2Ks. Grain structure and its crystal orientation distribution was measured about both the as welded specimens and the post weld heat treated specimens. An optical microscope (OM) and an field emission scanning electron microscope (FE-SEM) was used for observing the grain structure and measuring its crystal orientation distribution, respectively. Changes on the grain structure and its crystal orientation distribution were not detected. From the present results, it was confirmed that the paint baking process after FSW do not affect on the grain structure and its crystal orientation distribution of FSWZ. The comprehensive investigations will be performed for various automotive aluminum alloys manufactured by different processes, in the future.

• ALGAE
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• v.21 no.2
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• pp.217-228
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• 2006

Seasonal compositions, standing crops and trophic status of phytoplankton were investigated at 13 sites of Suwon-si, Gyeonggi-do from June, 2004 to March, 2005. Total of 304 taxa were found, and classified as 4 phylums 4 classes 13 orders 36 families 93 genera 246 species 47 varieties 8 forms and 3 unidentified species by Engler’s classification system. Judged by standing crops of phytoplakton, algal blooming was observed at every sampling sites except Pajang reservoir, Hagwanggyo reservoir, Suwon-cheon and Woncheon-cheon throughtout the whole study periods. While Hagwanggyo reservoir appeared to be in mesotrophic or oligomesotrophic status, most of the remaining sampling sites in Suwon-si were in eutrophic status according to trophic status index. In this study, the most abundant taxa revealed in eutrophic status were Anabaena circinalis, Pandorina morum, Scenedesmus acuminatus, and S. quadricauda as previously reported as the most abundant taxa in eutrophic status. But Navicula cryptocephala and Cyclotella stelligera, reported as the abundant taxa of mesotrophic and oligomesotrophic status, respectively, occurred in eutrophic status in this study.

• Journal of The Geomorphological Association of Korea
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• v.25 no.3
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• pp.57-70
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• 2018

This study restores onshore paleo-shoreline records and establishes the nature and strain rate of neotectonism by investigating the existence and formative age of paleo-coastal sediments emerged around Sacheon-si in the Southern part of the Korean peninsula. As a result, paleo-sand bars representing 5m of the paleo-shoreline from high tide level are formed in Sacheon-si, and the formation age of these is confirmed as MIS 5c at approximately 100,000 year BP through rock surface luminescence dating to rounded gravels in paleo-sand bars. Although it is difficult to establish the uplift rate of crust precisely due to incomplete restoration of sea level records during the last interglacial stage, the uplift rate along the Southern coast of the peninsula was assumed approximately 0.72 lower than the Eastern coast during the late Quaternary in comparison to the 1st marine terrace along the Eastern coast.

• Korean Journal of Ecology and Environment
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• v.54 no.2
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• pp.142-150
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• 2021

To analyze the distribution characteristics of alien plants in various habitat types, 249 sites were selected from four administrative districts in the Gyeongsang region of Korea. The survey was conducted across nine different habitat types. A total of 115 species of alien plants were collected; comprising 23 families, 73 genera, 112 species, and 3 varieties. Species from the family Compositae were the most common at 33.0%. Raunkiaer's life forms had the highest occurrence rate with 70 species(60.9%) of therophytes(Th) followed by 30 species (26.1%) of hemicryptophytes (H) and 8 species (7.0%) of geophytes (G). The distributions of alien plant species per habitat type were: 81 species on the roadside; 80 species on vacant lots and artificial habitats; 67 species in streams; 53 species in grasslands; 47 species in cultivated lands; and 39 species on the coast. Since 2017, the number of alien plants has increased in Gyeongju-si, Cheongdo-gun, and Pohang-si, and decreased in Ulsan Metropolitan-si. In each region, 614 taxa were observed. The invasive alien species, Sicyos angulatus, Hypocaeris radicata, and Solanum carolinense, were observed for the first time and are expected to further increase the disturbance of the ecosystem.

• Journal of the Korean Electrochemical Society
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• v.3 no.4
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• pp.200-203
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• 2000

Boron doped conducting diamond thin films were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was ca. $10^2ppm\;(B/C)$. The Si substrate was tilted ca. $10^{\circ}$ to make Si substrate, which have different height and temperature. Experimental results showed that different crystalline of diamond thin films were made by different temperature of Si substrate. There appeared $3\~4$ steps of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at $1334cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near $1550 cm^{-1}$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.191-196
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• 1999

Effects of agitation and heating rate on crystallinity, size distribution and mean size of $\alpha$-$SiO_2$powder prepared hydrothermally were investigated. $\alpha$-$SiO_2$crystalline powder, in mean particle size of 1~3.2 $\mu\textrm{m}$, was obtained at $350^{\circ}C$ using KOH as a mineralized for a 3 h reaction. Experimental results showed that particle size became smaller as the rate of agitation increased if it was introduced from the beginning of reaction, however, crystallinity was reduced at the low rate of agitation and it was became enhanced at above 150 r/min. Particle size became larger if agitation was introduced at any time during the reaction rather than introduced from the beginning of reaction. It was also found that particle size became smaller if heating rate was reduced, while the rate of agitation kept constant.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.471-475
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• 1999

The metal plasma-etch damage immunity of nMOSFET with $N{_2}O$ gate oxide is found to be improved comparing to that with regular pure oxide of similar thickness. With increasing the antenna ratio (AR), the characteristics of nMOSFETs with $N{_2}O$ oxide shows tighter initial distribution and smaller degradation under constant field stress, which is explained by the effect of the nitrogen at the substrate $Si/SiO_2$ interface. Also, if $N{_2}O$ gate oxide is used, the maximum allowable size of metal AAR and PAR may be increased to the much larger values. These improvements of nMOSFETs with $N{_2}O$ gate oxide are attributed to the effect of the interface hardness improved by the nitrogen included at the substrate-Si/$N{_2}O$-oxide interface.