• 한국재료학회지
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• 제24권3호
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• 한국재료학회지
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• 제31권12호
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• pp.727-731
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• 2021

In this study, we have investigated a selective emitter using a UV laser on BBr₃ diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr₃ diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al₂O₃ deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• Nuclear Engineering and Technology
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• 제52권11호
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• pp.2572-2580
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• 2020

Emerging gamma ray detection applications that utilize neutron-based interrogation result in the prompt emission of high-energy (>2 MeV) gamma-rays. Rapid imaging is enabled by scintillators that possess high density, high atomic number, and excellent energy resolution. In this paper, we evaluate the bright (50,000 photons/MeV) oxide scintillator, cerium-doped Gd₂Al₂Ga₃O₁₂ (GAGG(Ce)). A silicon photomultiplier (SiPM) array is coupled to a GAGG(Ce) scintillator array (12 × 12 pixels) and integrated into a coded-aperture based gamma-ray imaging system. A resistor-based symmetric charge division circuit was used reduce the multiplicity of the analog outputs from 144 to 4. The developed system exhibits 9.1%, 8.3%, and 8.0% FWHM energy resolutions at 511 keV, 662 keV, and 1173.2 keV, respectively. In addition, a pixel-identification resolution of 602 ㎛ FWHM was obtained from the GAGG(Ce) scintillator array.

• 한국세라믹학회지
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• 제34권9호
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• pp.941-948
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• 1997

CuCl nanocrystallites dispersed nonlinear optical silica and borosilicate glasses were fabricated by sol-gel process. CuCl powder was dissolved in TEOS(Si(OC2H5)4) and TMB((CH3O)3B), precursors of silica and borosilicate glasses, with ethanol, water and HCl, and precipitated through the heat treatment in the matrix glass. The optical properties of CuCl doped glasses were measured using the spectrophotometer at room temperature and low temperature(77K); Z1, 2 and Z3 exciton peaks from the absorption spectra, were observed at about 370 nm and 380 nm, respectively. The average radius of nanocrystallites, calculated from the blue shift of Z3 excitons, was measured according to annealing temperature and time. The precipitation temperature of CuCl nanocrystallites was decreased when boron was added to silica glass. Increase of annealing temperature and time made average radius of nanocrystallites saturated about 2 nm.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2004년도 춘계학술대회
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• pp.96-99
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• 2004

A new proton conductive inorganic-organic hybrid membrane doped with $H_3PO_4$ was fabricated via sol-gel process wit 3- glycidoxypropyltrimethoxysilane(GPTMS), 3-aminopropyltriethoxysilane(APTES) and tetraethoxysilane(TEOS) asprecursors. Theproto conductivity of about 3.0$\times10^{-3}S/cm$ was obtained at $120^{\circ}C$ under $50\%$ relative humidity (R.H). DTA curves showed that the thermal stability of the membrane is significantly enhanced by the presence of $SiO_2$ framework up to $250^{\circ}C$. SEM and XRD revealed that the gel is microporou and amorphous. The addition of APTES improved the conductivity of the membranes and the effect of the APTES on the conductivity was also discussed in this paper.

• 한국재료학회지
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• 제23권5호
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• pp.271-275
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• 2013

Cobalt (Co) compounds have been used for centuries to impart rich blue color to glass, glazes and ceramics. Cobalt monoxide (CoO), an oxide of Co, is an inorganic compound that has long been used as a coloring agent in the ceramic industry. Unlike other coloring agents, CoO can be used to develop colors other than blue, and several factors such as its concentration in the glaze and firing condition have been suggested as possible mechanisms. For example, CoO produces a typical blue color called "cobalt blue" at very low concentrations such as 1 wt% in both oxidation and reduction firing conditions; a higher concentration of CoO (5 wt%) develops a darker blue color under the same firing conditions. Interestingly, CoO also develops a purple color at high concentrations above 10 wt%. In this study, we examined the applicability and mechanism of a novel purple glaze containing cobalt(II, III) oxide, one of the well characterized cobalt oxides. Experimental results show that an Augite crystal isoform (Augite-Fe/Co) in which Fe was replaced with Co is the main component contributing to the formation of the purple color. Based on these results, we developed a glaze using chemically synthesized Augite-Fe/Co crystal as a color pigment. Purple color glaze was successfully developed by the addition of 6~15 wt% of $Co_3O_4$ to magnesia lime.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2007년도 추계학술연구발표회 및 정기총회
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• pp.49-49
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• 2007

• Bulletin of the Korean Chemical Society
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• 제31권11호
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• pp.3075-3076
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• 2010

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 자성 및 자성재료 국제학술대회
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• pp.130-130
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• 2014