• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• Journal of the Korean Vacuum Society
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• v.7 no.2
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• pp.141-149
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• 1998

The W thin films were deposited on Si3N4 by a PECVD technique. The effects of substrate temperature and gas flow ratio on the properties of the W films were investigated. The deposition of W films were limited by surface reaction at the temperature range of 150>~$250^{\circ}C$, W films had the deposition rate of 150~530 $\AA$/min and stress of 0.85~$14.35\times10 ^9 \textrm {dynes/cm}^2}$ at various substrate temperatures and $SiH_4/WF_6$ flow ratios. $SiH_4/WF_6$ flow ratio affected the deposition rate and stress of the W films, expecially, excessive flow of SiH4 abruptly changed the structure, chemical bonding, and stress of the W films. Among the deposited W films on TiN, Ti, Mo, NiCr and Al adhesion layer, the one on the Al had the best adhesion property.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.250-250
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• 2010

Flexible display의 발전에 따라 점차 고온 공정에서 plastic 기판에 영향을 주지 않는 저온 공정으로 변화해 가고 있다. 이러한 발전에 따라 공정온도에 따른 SiNx의 특성 분석을 위해 우선 150C~300C에서 SiNx의 박막을 증착하였다. gas ratio (SiH4:NH3=4:60)와 Power (50W), 공정시간(25min)을 고정하고 온도만을 가변하여 박막의 특성을 분석하였다. 이후에 150C로 온도를 고정 후 gas ratio를 가변하고 Power (40W)와 온도(150C)는 고정 후 실험을 진행하여, 150C에서 최적화된 gas ratio를 알아내도록 하였다. 위의 실험은 p-type 실리콘 웨이퍼 위에 SiNx 박막 증착 후 굴절률과 증착률을 측정하였고, Al 전극을 증착하여 MIS구조를 구현하여, gate voltage에 따른 capacitance를 측정하였다. 이번 논문에서는 SiNx의 Substrate temperature와 gas ratio의 변화에 따른 다양한 특성을 확인하고 이를 체계적으로 분석하였다.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.13 no.1
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• pp.16-21
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• 2004

In order to investigate the characteristics of diamond wheel grinding of ceramic materials, grinding resistance, surface roughness of ground surface and image of grinding wheel were acquired using experimental method. Through the experiments, this makes it possible to observe grinding wheel behavior by grinding resistance, surface roughness and cutting edge ratio. In case of $Al_2O_3$, cutting edge ratio is bigger than that of $ZrO_2$ and $Si_3N_4$. That's because $Al_2O_3$ has a characteristic of low fracture toughness and bending stress.

• Applied Chemistry for Engineering
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• v.8 no.2
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• pp.179-190
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• 1997

To study the effects of chemical composition on the fusion temperatures of coal ashes, the chemical composition, mineral matter, and fusion temperature were studied with 54 kinds of coal ash samples including Korean anthracite coals. CaO, MgO and $Fe_2O_3$ were observed to be major fluxing elements in reducing and oxidizing atmosphere. The fluxing effect of $Fe_2O_3$ was increased more in reducing atmosphere. In a base/acid ratio, the fusion temperature decreased with increasing amounts of basic components. Nevertheless, the correlation between a fusion temperature and base/acid ratio was not shown well in a higher ratio of $Fe_2O_3/CaO$. The differences of fusion temperatures between oxidizing and reducing atmosphere showed close relationship with $SiO_2/Al_2O_3$ ratio rather than with $Fe_2O_3$ contents. Multiple regression was used to predict the fusion temperature of coal ashes, and it was established that the major predictors in oxidizing atmosphere were Base/Acid, $Fe_2O_3/CaO$, $SiO_2/Al_2O_3$, and $(SiO_2/A1_2O_3){\cdot}(Base/Acid)$ and Base/Acid, $Fe_2O_3/CaO$, $SiO_2$, and $TiO_2$ were major ones in reducing atmosphere.

• Korean Chemical Engineering Research
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• v.53 no.3
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• pp.339-349
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• 2015

In this work, DAY (Dealuminated Y-type) zeolites were prepared to be used as easily regenerable and thermally stable adsorbent substituting activated carbon. NaY zeolites were transformed into DAY zeolites through ion exchange, calcination, steaming, and acid leaching. Calcination temperature and time, and steaming time were changed to increase the Si/Al ratio and maintain crystallinity. Adsorption of VOCs were done for prepared DAY, commercial NaY and Hisiv 1000 in air with relative humidity of 50%. The DAY zeolite prepared by calcination at $520^{\circ}C$ for 4 hrs and steaming for 7 hrs had a same structure and a Si/Al ratio of 80.4. Its adsorption capacity for water vapor was 10% of NaY, indicating its hydrophobicity. Its adsorption capacity for MEK was 0.8 times of Hisiv 1000, that for toluene 1.6 times, and that for EA 1.3 times.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.319.1-319.1
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• 2016

Recently, the Al-doped ZnO (ZnO:Al) films are intensively used in thin film a-Si solar cell applications due to their high transmittance and good conductivity. The textured ZnO:Al films are used to enhance the light trapping in thin film solar cells. The wet etch process is used to texture ZnO:Al films by dipping in diluted acidic solutions like HCl or HF. During that process the glass substrate could be damaged by the acidic solution and it may be difficult to apply it for the inline mass production process since it has to be done outside the chamber. In this paper we report a new technique to control the surface morphology of RF-sputtered ZnO:Al films. The ZnO:Al films are textured with vaporized HF formed by the mixture of HF and H2SiO3 solution. Even though the surface of textured ZnO:Al films by vapor etching process showed smaller and sharper surface structures compared to that of the films textured by wet etching, the haze value was dramatically improved. We achieved the high haze value of 78% at the wavelength of 540 nm by increasing etching time and HF concentration. The haze value of about 58% was achieved at the wavelength of 800 nm when vapor texturing was used. The ZnO:Al film texture by HCl had haze ratio of about 9.5 % at 800 nm and less than 40 % at 540 nm. In addition to low haze ratio, the texturing by HCl was very difficult to control etching and to keep reproducibility due to its very fast etching speed.

• Journal of Ocean Engineering and Technology
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• v.22 no.4
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• pp.59-64
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• 2008

The mechanical properties of liquid phase sintered (LPS) SiC materials, with the addition of oxide powder, were investigated, in conjunction with a detailed analysis of their microstructures. LPS-SiC materials were fabricated at a temperature of 1820 $^{\circ}C$ under an argon atmosphere, using three different starting sizes of SiC particles. The sintering additive for the fabrication of the LPS-SiC materials was an $Al_2O_3-Y_2O_3$ mixture with a constant composition ratio ($Al_2O_3/Y_2O_3$: 1.5). The particle sizes of the commercial SiC powderswere 30 nm, 0.3 $\mu$m, and 3.0 $\mu$m. The flexural strength of the LPS-SiC materials was also examined at elevated temperatures. A decrease in the starting size of the SiC particles led to an increase in the flexural strength of the LPS-SiC materials, accompanying a highly dense morphology with the creation of a secondary phase. Such a secondary phase was identified as $Y_3Al_2(AlO_4)2$. The flexural strength of the LPS-SiC materials greatly decreased with an increase in the test temperature, due to the creation of a large amount of pores.

• Resources Recycling
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• v.20 no.4
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• pp.58-64
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• 2011

Recovery of novel metals such as Au, Ag and Ni from wastes PCB was investigated by slag treatments. The CaO-$Al_2O_3$(-$SiO_2$) and CaO-$SiO_2$-$CaF_2$ slags were employed in the present study. The PCB/Cu ratio is recommended to be lower than unity. The use of CaO-$SiO_2$-$CaF_2$ slag provided the more higher yield of Au, Ag and Ni than the CaO-$Al_2O_3$(-$SiO_2$) slag did, which was mainly due to the lower melting point and the viscosity of $CaF_2$-containing slag. The terminal descending velocity of metal droplets in the slag phase increased with decreasing slag viscosity.

• Journal of the Korean Recycled Construction Resources Institute
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• v.6 no.1
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• pp.25-35
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• 2018

This study presents microstructural characteristics and strength properties of alkali-activated kaolin(K)-fly ash(FA) blends binders. The compressive strength, X-ray diffraction(XRD), thermogravimetric(TG) analysis and SEM/EDS were measured for hardened samples. The results were shown that all the samples had developed the compressive strength over time, regardless of replacement levels of K. It was found that when the amount of K increased, the strengths of samples decreased. In XRD result, no new crystalline phases were observed in all the hardened samples other than the crystalline components of raw FA and K, whereas TG analysis showed that N-A-S-H gel was formed as a reaction product in all the samples. Samples did not have the typical microstructure of dense, and there is little significant difference between the microstructures of the samples despite the differences in the strength testing results with replacement ratios of K. This study showed that the strength of sample was larger for lower Si/Al ratio of reaction product formed in sample. According to the correlation between Si/Al ratio and strength in this study, it is expected that if a chemical additive is used for lowering the Si/Al ratio of reaction product(i.e., increasing the $Al_2O_3$ solubility) in alkali-activated K-FA blends binders, strength improvement in K-FA blends binders could be achieved.