• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.3.1-3.1
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• 2011

Over the past decade, the major efforts for lowering the cost of electronics has been devoted to increasing the packaging efficiency of the integrated circuits (ICs), which is defined by the ratio of all devices on system-level board compared to the area of the board, and to working on a larger but cheaper substrates. Especially, in flexible electronics, the latter has been the favorable way along with using novel nanomaterials that have excellent mechanical flexibility and electrical properties as active channel materials and conductive films. Here, the tool for achieving large area patterning is by printing methods. Although diverse printing methods have been investigated to produce highly-aligned structures of the nanomaterials with desired patterns, many require laborious processes that need to be further optimized for practical applications, showing a clear limit to the design of the nanomaterial patterns in a large scale assembly. Here, we demonstrate the alignment of highly ordered and dense silicon (Si) NW arrays to anisotropically etched micro-engraved structures using a simple evaporation process. During evaporation, entropic attraction combined with the internal flow of the NW solution induced the alignment of NWs at the corners of pre-defined structures. The assembly characteristics of the NWs were highly dependent on the polarity of the NW solutions. After complete evaporation, the aligned NW arrays were subsequently transferred onto a flexible substrate with 95% selectivity using a direct gravure printing technique. As proof-of-concept, flexible back-gated NW field effect transistors (FETs) were fabricated. The fabricated FETs had an effective hole mobility of 0.17 $cm2/V{\cdot}s$ and an on/off ratio of ${\sim}1.4{\times}104$. These results demonstrate that our NW gravure printing technique is a simple and effective method that can be used to fabricate high-performance flexible electronics based on inorganic materials.

• Journal of the Korean Magnetics Society
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• v.4 no.2
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• pp.142-149
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• 1994

The Barkhausen noise was measured as the change of line width(39~1.22 mm) and scratching angle($90^{\circ}~50^{\circ}$) with respect of rolling direction in grain-oriented 3 % Si-Fe of 0.30 and 0.27 mm thickness. The two peak phenomena of the noise envelope observed for non-scratching and scratching of line width 39 mm was explained by large activation energy during $180^{\circ}$ domain wall nucleation and annihilation processes. The amplitudes of the noise envelpoes were decreased as the decrement of scratching line width, but did not almost changed below line width of 9.75 mm. It was explained that the decrease in the envelope with increasing scratching number is associated with lower activation energy of $180^{\circ}$ domain nucleation and annihilation in the vicinity of the scratching area. The noise power was decreased as narrower line width. The dependence of the power on the scratching angle was sharpest decreaded at the 50 angle.

• Journal of the Korean Magnetics Society
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• v.11 no.4
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• pp.168-172
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• 2001

Co-Zn ferrite thin films grown on thermally oxidized silicon wafers were fabricated by a sol-gel method. Magnetic and structural properties of Co-Zn thin films were investigated by using x-ray diffractometer (XRD), atomic force microscopy (AFM), auger electron spectroscopy (AES) and a vibrating sample magnetometer (VSM). Co-Zn ferrite thin films annealed at 400 $^{\circ}C$ presented have only a single phase spinel structure without any preferred crystallite orientation. Their surface roughness of Co-Zn ferrite thin films was shown as less than 3 nm and the grain size was about 40 nm for annealing temperatures over 600 $^{\circ}C$. A moderate saturation magnetization of Co-Zn ferrite thin films for recording media was obtained in this study and there is no significant difference of their magnetic property with those external fields of parallel and perpendicular to planes of the films. The maximum value of the coercivity was obtained as 1,900 Oe for Co-Zn ferrite thin film annealed at 600 $^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.42-49
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• 1999

In this paper, we proposed a simple measurement method to find the behaviors of the fiber-to-waveguide coupler. The polished fiber blocks and planar waveguides on silicon dioxide were fabricated independently and then optically coupled by physical pressure. Several kinds of polymer with different refractive indices were used for waveguide films. The proposed method makes it possible to measure the center wavelength, bandwidth, extinction ratio, and polarization dependence of the coupler during fabrication procedure. The wavelength sensitivity increased with refractive index of polymer. The symmetric planar waveguide structure and isotropic property of guiding materials reduced polarization dependent property. Insertion loss of the coupler was less than 0.5dB. It is expected that our measurement method is useful for developing various optical devices using evanescent coupling between polished fiber and planar waveguide such as optical modulators and filters etc.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.81-86
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• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1999.06a
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• pp.187-207
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• 1999

The thermal distributions near the growth interface of 150mm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10m from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it si confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient (G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective lengths of the thermal gradient for defect generation are varied, were defined the effective length as 10mm from the interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitial. The experimental results which FZ and CZ crystals are detached from the melt show that growth interfaces are filled with vacancy. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitial are necessary. Such interstitial recombine with vacancies which were generated at the growth interface, next occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by the distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melt, respectively.

• The Journal of Korean Academy of Prosthodontics
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• v.54 no.4
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• pp.445-450
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• 2016

Piezography, prosthetic space recorded by pronunciation, can be used as a reference for arrangement of artificial teeth and polishing surface of a denture. In this case, a 67 year old female patient was presented for new dentures. Old dentures had class II relationship and poor retention. For fabrication of stable dentures, using piezography and lingualized occlusion was planned. After taking impressions with conventional method, conventional denture bases with wax rim were fabricated. Then, additional mandibular denture base was fabricated for piezography. With fast setting silicon impression material, piezography was recorded by using six pronunciations, 'si', 'so', 'me', 'te', 'de', and 'mu'. According to the piezographic space, mandibular artificial teeth were arranged and modified for lingualized occlusion. As a result, the patient was satisfied with new dentures functionally and esthetically.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.242-255
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• 2008

In lithium-ion batteries(LIB), the development of electrolytes had mainly focused on the characteristics of lithium cobalt oxide($LiCoO_2$) cathode and graphite anode materials since the commercialization in 1991. Various studies on compatibility between electrode and electrolytes had been actively developed on their interface. Since then, as they try to adopt silicon and tin as anode materials and three components(Ni, Mn, Co), spinel, olivine as cathode materials for advanced lithium batteries, conventional electrolyte materials are facing a lot of challenges. In particular, requirements for electrolytes performance become harsh and complicated as safety problems are seriously emphasized. In this report, we summarized the research trend of electrolyte materials for the electrode materials of lithium rechargeable batteries.

• Fashion & Textile Research Journal
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• v.17 no.6
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• pp.1004-1012
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• 2015

The purpose of this study is to investigate the loess dyeability of soybean fabric using loess as colorants. Recent days, various textile products such as inner wears, sheets and interior goods are manufactured using materials dyed with loess emphasizing its improved metabolism, anti-bacterial, deodorizing properties, and far infrared ray emissions. Soybean fabric was dyed with loess solution according to concentration of loess, dyeing temperature and dyeing time. To improve washing fastness, soybean fabric and dyed soybean fabric with loess were mordanted by mordanting agents such as sodium chloride(NaCl), Acetic acid(CH₃COOH) and Aluminium Potassium Sulfate(AlK(SO₄)₂·12H₂O). Dyeability and color characteristics of dyed soybean fabric were obtained by CCM observation. Particle size distribution of loess, the dyeability(K/S) of soybean fabric, morphology and washing durability of loess dyed soybean fabric were investigated. The results obtained were as follows; Mean average diameter of loess was 1.08µm. The main components of loess used in this study were silicon dioxide(SiO₂), aluminium oxide(Al₂O₃), and iron oxide(Fe₂O₃). The content of these three component was above 75 weight %. The dyeability of soybean fabric was increased gradually with increasing concentration of loess. The optimum dyeing temperature and dyeing time were 90℃ and 60minutes expectively. The fastness to washing according to concentration of loess and mordanting method indicated good grade result as more than 4 degree in all conditions.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.301-306
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• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.