• Journal of the Korean Ceramic Society
• /
• v.42 no.8 s.279
• /
• pp.575-581
• /
• 2005

SiC-based ceramics are considered as candidate materials for the advanced nuclear energy systems such as the generation IV reactors and the fusion reactors due to their excellent high-temperature strength and irradiation resistance. The advanced nuclear energy systems and their main components adopting ceramic composites were briefly reviewed. A novel fabrication method of $SiC_f/SiC$ composites by introducing SiC whiskers was also described. In addition, the charged-particle irradiation ($Si^{2+}$ and $H^{+}$ ion) into CVD SiC was carried out to simulate the severe environments of the advanced nuclear reactors. SiC whiskers grown in the fiber preform increased the matrix infiltration rate by more than $60\%$ compared to the conventional CVI process. The highly crystalline and pure SiC showed little degradation in hardness and elastic modulus up to a damage level of 10 dpa at $1000^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.06a
• /
• pp.545-545
• /
• 2008

Poly-Si is an essential material for floating gate in NAND Flash memory. To fabricate this material within region of floating gate, chemical mechanical polishing (CMP) is commonly used process for manufacturing NAND flash memory. We use colloidal silica abrasive with alkaline agent, polymeric additive and organic surfactant to obtain high Poly-Si to SiO2 film selectivity and reduce surface defect in Poly-Si CMP. We already studied about the effects of alkaline agent and polymeric additive. But the effect of organic surfactant in Poly-Si CMP is not clearly defined. So we will examine the function of organic surfactant in Poly-Si CMP with concentration separation test. We expect that surface roughness will be improved with the addition of organic surfactant as the case of wafering CMP. Poly-Si wafer are deposited by low pressure chemical vapor deposition (LPCVD) and oxide film are prepared by the method of plasma-enhanced tetra ethyl ortho silicate (PETEOS). The polishing test will be performed by a Strasbaugh 6EC polisher with an IC1000/Suba IV stacked pad and the pad will be conditioned by ex situ diamond disk. And the thickness difference of wafer between before and after polishing test will be measured by Ellipsometer and Nanospec. The roughness of Poly-Si film will be analyzed by atomic force microscope.

• Applied Chemistry for Engineering
• /
• v.7 no.3
• /
• pp.490-495
• /
• 1996

Low molecular weight linear chlorine terminated siloxanes (yields;71.2~86.5%) were prepared by reactions of cyclotri-, cyclotetra- and cyclopentasiloxane with dimethyldichlorosilane in the presence of pyridine N-oxide catalyst. The amine terminated siloxane oligomers were obtained in good yields(76.2~85.3%) by the reaction of linear chlorine terminated siloxanes with dimethylamine at $0^{\circ}C$. In this investigation, we have studied on the syntheses and properties of copolymers (yields;58.0~71.0%) obtained from the reaction of amine terminated siloxane oligomers with 1,4-bis(dimethylhydroxysilyl)benzene. The structures and properties of the copolymers were examined by FT-IR, $^1H$-NMR, TGA and DSC. Initial degradation temperatures($T_D{^i}$) of the polymer I and IV were confirmed as 476 and $485^{\circ}C$, respectively. The thermal stabilities of the polymers were found to be increased with increasing n of $(R_2SiO)_n$. The glass transition temperatures(Tg) of the polymers were increased with decreasing n of $(R_2SiO)_n$, and the lowest Tg revealed $-76^{\circ}C$ when n=5.

• Korean Journal of Soil Science and Fertilizer
• /
• v.7 no.4
• /
• pp.215-220
• /
• 1974

The relation between yield or total dry matter yield and nitrogen, phosphorus, potassium or silica uptake was investigated according to simple or multiple correlation coefficients, and multiple regression equations. 1. Simple correlation coefficient was always higher with total dry matter yield than with grain yield and highest with N in no nitrogen (0-6-8) or no fertilizer (0-0-0) plot, with P in no phosphorus plot (10-0-8) but lowest with K in no potassium plot (10-6-0). 2. Multiple correlation coefficient was always higher than simple correlation and the same is true with including Si as one more variation. There was clear trend that multiple correlation coefficient was highest in no fertilizer plot and lowest in no potassium plot. 3. Simple correlation coefficient with P was higher in the warm year in which P uptake and fertilizer-P use efficiency were higher while it with K was higher in the cool year in which K uptake and fertilizer-K use efficiency were higher. Nitrogen and silicate followed potassiuum. But partial regression coefficients of N. P. K and Si with yield were mostly significant only in the warm year. 4. Partial regression coefficient of K was negative in many cases with yield but significant positive value with total dry matter yield. 5. Partial regression coefficients of N. P and K were decreased when Si was included and the decrease was great in P. 6. With the increase of nitrogen fertilizer level partial regression coefficient was increased in N but decreased in P, and no consistency in K or Si. 7. According to single or multiple correlation coefficients and partial regression coefficients the contribution of nutrient to grain yield appears to be in the order of N > Si > P > K and to total dry matter yield in the order of N > K > Si > P, indicating that N is the main factor and others are closely related to each other throughout to N. The superiority of N was also proved by frequency pattern of relative yield.

• Korean Journal of Heritage: History & Science
• /
• v.50 no.4
• /
• pp.122-147
• /
• 2017

The Jungsandong sites are distributed across quartz and mica schist formations in Precambrian, and weathering layers include large amounts of non-plastic minerals such as mica, quartz, felspar, amphibole, chlorite and so on, which form the ground of the site. Neolithic pottery from Jungsandong exhibits various brown colors, and black core is developed along the inner part for some samples, and sharp comb-pattern and hand pressure marks can be observed. Their non-plastic particles have various composition, size distribution, sorting and roundness, so they are classified into four types by their characteristic mineral compositions. I-type (feldspar pottery) is including feldspar as the pain component or mica and quartz. II-type (mica pottery) is the combination of chloritized mica, talc, tremolite and diopside. III-type (talc pottery) is with a very small amount of quartz and mica. IV-type (asbestos pottery) is containing tremolite and a very small amount of talc. The inner and outer colors of Jungsandong pottery are somewhat heterogeneous. I-type pottery group shows differences in red and yellow degree, depending on the content of feldspar, and is similar to III-type pottery. II-type is similar to IV-type, because its red degree is somewhat high. The soil of the site is higher in red and yellow degree than pottery from it. The magnetic susceptibility has very wide range of 0.088 to 7.360(${\times}10^{-3}$ SI unit), but is differentiated according to minerals, main components in each type. The ranges of bulk density and absorption ratio of pottery seem to be 1.6 to 1.7 and 13.1 to 26.0%, respectively. Each type of pottery shows distinct section difference, as porosity and absorption ratio increase in the order as follows: I-type (organic matter fixed sample) < III-type and IV-type < I-type < II-type (including IV-type of IJP-15). The reason is that differences in physical property occur according to kind and size of non-plastic particles. Although Jungsandong pottery consists of mixtures of various materials, the site pottery has a geological condition on which all mineral composition of Jungsandong pottery can be provided. There, it is thought that raw materials can be supplied from weathered zone of quartz and mica schist, around the site. However, different constituent minerals, size and rock fragments are shown, suggesting the possibility that there can be more raw material pits. Thus, it is estimated that there may be difference in clay and weathering degree.

• Korean Journal of Materials Research
• /
• v.13 no.5
• /
• pp.279-284
• /
• 2003

The $CoSi_2$ process is widely employed in a salicide as well as an ohmic layer process. In this experiment, we investigated the characteristics of $CoSi_2$ films by combinations of I-type (TiN 100$\AA$/Co 150$\AA$), II-type(TiN 100$\AA$/Co 150$\AA$/Ti 50$\AA$), III-type(Ti 100$\AA$/Co 150$\AA$/Ti 50$\AA$), and IV-type(Ti 100$\AA$/Co 150$\AA$/Ti 100$\AA$). Sheet resistances of $CoSi_2$ show the lowest resistance with 2.9 $\Omega$/sq. in a TiN/Co condition and much higher resistances in conditions simultaneously applying Ti capping layers and Ti interlayers. Though we couldn't observe a $CoSi_2$roughness dependence on the film stacks from RMS values, Ti capping layers turned into 78∼94$\AA$ thick TiN layers of (200) preferred orientation at $N_2$ambient. In addition, Ti interlayers helped to form the epitaxial $CoSi_2$with (200) preferred orientation and ternary compounds of Co-Ti-Si. We propose that film structures of II-type and III-type may be appropriate in the salicide process and the ohmic layer process from the viewpoint of Co diffusion kinetics and the CoSi$_2$epitaxy.

• Publications of The Korean Astronomical Society
• /
• v.11 no.1
• /
• pp.1-26
• /
• 1996

We have built a near-infrared imaging camera with a PtSi array detector manufactured by the Mitsubishi Company. The PtSi detector is sensitive in the wavelength range 1 to $5{\mu}m$. Quantum efficiency of PtSi is much lower than that of InSb and HgCdTe types. However, the PtSi array has advantages over the latter ones: (i)The read-out noise is very low; (ii)the characteristics of the array elements arc uniform and stable; (iii)it is not difficult to make a large PtSi array; and (iv) consequently the price is affordably low. The array used consists of $512{\times}512$ pixels and its size is $10.2\;mm{\times}13.3\;mm$. The filter wheel of the camera is equipped with J, H, K filters, and an aluminum plate for measuring the dark noise. The dewar is cooled with liquid nitrogen. We have adopted a method of installing the clock pattern and the observing softwares in the RAM, which Gill he easily used for other systems. We have developed a software with a pull-down menu for operating the camera and data acquisition. The camera has been tested by observing $\delta$ Orionis.

• The Bulletin of The Korean Astronomical Society
• /
• v.31 no.1
• /
• pp.39.2-39.2
• /
• 2006

• Membrane Journal
• /
• v.28 no.4
• /
• pp.221-232
• /
• 2018

The silica containing carbon ($C-SiO_2$) membranes were fabricated using poly(imide siloxane)(Si-PI) and polyvinylpyrrolidone (PVP) blended polymer. The characteristics of porous carbon structures prepared by the pyrolysis of polymer blends were related with the micro-phase separation behaviors of the two polymers. The glass transition temperatures ($T_g$) of the mixed polymer blends of Si-PI and PVP were observed with a single $T_g$ using differential scanning calorimetry. Furthermore, the nitrogen adsorption isotherms of the $C-SiO_2$ membranes were investigated to define the characteristics of porous carbon structures. The $C-SiO_2$ membranes derived from Si-PI/PVP showed the type IV isotherm and possessed the hysteresis loop, which was associated with the mesoporous carbon structures. For the molecular sieving probe, the $C-SiO_2$ membranes were prepared with the ratio of Si-PI/PVP and the pyrolysis conditions, such as the pyrolysis temperature and the isothermal times. Consequently, the $C-SiO_2$ membranes prepared by the pyrolysis of Si-PI/PVP at $550^{\circ}C$ with the isothermal time of 120 min showed the $O_2$ permeability of 820 Barrer ($1{\times}10^{-10}cm^3(STP)cm/cm^2{\cdot}s{\cdot}cmHg$) and $O_2/N_2$ selectivity of 14.

• Journal of the Korean Vacuum Society
• /
• v.3 no.3
• /
• pp.341-345
• /
• 1994

As+ 와 P+ 이온들이 주입된 실리콘에서 주입 이온들의 확산 및 실리콘의 재결정화에 열처리가 미치는 영향에 대해서 조사하였다, 여기서 이온 주입량은 실리콘 표면영역을 비정질화하기에 충분한 양 이었다. 이온 주입 시실리콘 내부에 생성된 손상들을 제거하기 위해 온도와 시간을 변화시켜 가며 시편 을 전기로 속에서 열처리하였다. 그러나 이때 야기된 도우펀트들의 과도적인 확산에 의해서 접합깊이는 예측한 것보다 더욱 깊은 곳에서 나타나다. 이러한 과도적인 확산은 주로 이온 주입으로 인해 야기된 시편들이 손상들을 제거하기 위한 열처리 과정동안 일어난 것으로 생각된다. 이것은 SIMS와 SUPREM IV simulation 에 의해서 확인할 수 가 있었다. As+ 와 P+ 이온이 주입된 실리콘의 결정성 회복을 Raman 분광법을 이용하여 조사하였다.