• Resources Recycling
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• v.28 no.2
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• pp.54-61
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• 2019

In order to recover pure alumina from black dross, leaching of mechanically activated black dross with NaOH solution resulted in an aluminate solution containing a small amount of Si(IV). Selective adsorption of Si(IV) onto hydrotalcite was investigated from 5 M NaOH solution where the concentration of Al(III) and Si(IV) was 13000 and 150 mg/L, respectively. Only Si(IV) was selectively loaded onto hydrotalcite, while Al(III) remained in the solution. Effect of the calcination treatment of hydrotalcite and concentration of calcined hydrotalcite and NaOH on the loading of Si(IV) was investigated. Although the loading percentage of Si(IV) was low from 5 M NaOH solution, most of the Si(IV) was removed by adjusting the concentration of NaOH by 48 times dilution with water when the concentration of calcined hydrotalcite was higher than 4.5 g/L. The loading of Si(IV) onto calcined hydrotalcite followed Freundlich adsorption isotherm.

• Resources Recycling
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• v.30 no.6
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• pp.36-42
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• 2021

Spent lithium-ion batteries are treated by reduction-smelting at high temperatures to recover valuable metals. Solvent extraction and precipitation of the HCl leaching solution of reduction-smelted metallic alloys resulted in a filtrate containing Ni(II) and a small amount of Si(IV). Adsorption and precipitation experiments were conducted to recover pure Ni(II) compounds from the filtrate. Si(IV) was selectively loaded onto polyacrylamide, but this method did not efficiently filter the solution due to an increase in viscosity. The addition of Na₂CO₃ as a precipitant to the filtrate led to the simultaneous precipitation of Ni(II) and Si(IV). However, it was possible to recover nickel oxalate with a purity higher than 99.99% by selectively precipitating Ni(II) with the addition of Na₂C₂O₄ as a precipitant.

• Journal of Astronomy and Space Sciences
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• v.17 no.1
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• pp.39-44
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• 2000

We reinvestigate UV line emissions of 44i Boo, W UMa, AW UMa and VW Cep, which are indicaters of chromospheric activity of these stars. C I, C II, C IV, Si IV lines show significant variation in orbital phase. Among those lines, the Line of C IV showed the strongest line flux. while other Si IV and N V lines showed relative low line intensities. 44i Boo emitted the strongest flux than other stars. UV light curves of target stars shoed UV maximum at phase around 0.2 an 0.8 Such UV emissions are generally believed to be observed at the active regions and contacting parts of the two stars due to the clear visibility at the phase 0.2 and 0.8. Total emissivity of four transitions lines lead to conclude that the activity of this region is 40 times larger than the quiet sun. It is obvious that the activity decrease according to increase period. We obtained also Mg II light curve of AW UMA and VW Cep. These stars showed more clearly phase-dependent light curves. We estimated effective temperature of two star, AW UMa and VW Cep, using by Mg II flux.

• Journal of Korea Foundry Society
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• v.18 no.6
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• pp.604-612
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• 1998

• Journal of the Korean Chemical Society
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• v.17 no.6
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• pp.428-433
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• 1973

The quantitative separations of a mixture containing equal amount of each anion such as Si(IV), As(V), P(V), S(VI), W(VI) and Cr(VI) are carried out by the elution through 20${\times}3.14cm^2$ column of anion exchange resin, Dowex 1${\times}$8. The eluents are a mixture of 0.07 M hydrochloric acid and 0.03 M sodium chloride (pH = 1.30) for Si(IV), As(V) and P(V) species, a mixture of 0.6 M sodium chloride and 0.3 M sodium hydroxide for S(VI), W(VI) and Cr(VI) species, and 0.1 N sodium sulfite (pH = 3.48) for P(V) and As(V) species. The subsidiary anions in a standard mixture such as Si(IV), As(V), S(VI), P(V) and W(VI) are separated together from large amount of Fe(III) by the elution through 30cm${\times}3.14cm^2$ column of the resin, Dowex${\times}$50w${\times}$12, using a mixture of 0.1 M sodium nitrate and 2 percent dimethylsulfoxide aqueous solution as an eluent. Si(IV), As(V), S(VI), P(V) and W(VI) eluted together are separated quantitatively under the same conditions as in the separations of the anion mixture. By the conditions obtained in the separations of the standard mixture, Fe(III) and all of the subsidiary anions in steel are quantitatively separated.

• Resources Recycling
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• v.28 no.5
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• pp.68-73
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• 2019

Ilmenite is one of the principal ores for the production of titanium dioxide. To produce titanium dioxide with purity higher than 99.9% from ilmenite, Ti(IV) should be separated from the dissolved impurities such as Fe(III), Si(IV), and Mn(II) present in ilmenite. In this work, a hydrometallurgical process was investigated to recover pure titanium dioxide from ilmenite by HCl leaching followed by separation and hydrolysis of Ti(IV). An optimum leaching condition was obtained by investigating the effect of HCl concentration, pulp density, and leaching time on the leaching percentage of Ti(IV), Fe(III), Si(IV), and Mn(II). Ammonium hydroxide and sodium hydroxide solutions were employed as neutralizing agents to hydrolyze Ti(IV) from the stripping solution of Ti(IV). Titanium dioxide of the anatase phase was obtained by calcination of the hydrolyzed precipitates with $NH_4OH$ solution. A hydrometallurgical process can be developed to produce pure $TiO_2$ powders from ilmenite.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.1
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• pp.1-14
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• 2021

The Unsang gold deposit has been one of the three largest deposits (Daeyudong, Kwangyang) in Korea. The geology of this deposit consists of series of host rocks including Precambrian metasedimentary rock and Jurassic Porphyritic granite. The deposit consists of Au-bearing quartz veins which filled fractures along fault zones in Precambrian metasedimentary rock and Jurassic Porphyritic granite, which suggests that it is an orogenic-type deposit. Quartz veins are classified as 1) galena-quartz vein type, 2) pyrrhotite-quartz vein type, 3) pyrite-quartz vein type, 4) pegmatic quartz vein type, 5) muscovite-quartz vein type and 6) simple quartz vein type based on mineral assembles. The studied quartz vein is pyrite-quartz vein type which occurs as sericitization, chloritization and silicification. The white mica from stylolitic seams of laminated quartz vein occurs as fine or medium aggregate associated with white quartz, pyrite, chlorite, rutile, monazite, apatite, K-feldspar, zircon and calcite. The structural formular of white mica from laminated quartz vein is (K0.98-0.86Na0.02-0.00Ca0.01-0.00Ba0.01-0.00 Sr0.00)1.00-0.88(Al1.70-1.57Mg0.22-0.09Fe0.23-0.10Mn0.00Ti0.04-0.02Cr0.01-0.00V0.00Ni0.00)2.06-1.95 (Si3.38-3.17Al0.83-0.62)4.00O10(OH2.00-1.91F0.09-0.00)2.00. It indicated that white mica of laminated quartz vein has less K, Na and Ca, and more Si than theoretical dioctahedral micas. Compositional variations in white mica from laminated quartz vein are caused by phengitic or Tschermark substitution [(Al3+)VI+(Al3+)IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV] and direct (Fe3+)VI <-> (Al3+)VI substitution. The structural formular of chlorite from laminated quartz vein is((Mg1.11-0.80Fe3.69-3.14Mn0.01-0.00Zn0.01-0.00K0.07-0.01Na0.01-0.00Ca0.04-0.01Al1.66-1.09)5.75-5.69 (Si3.49-2.96Al1.04-0.51)4.00O10 (OH)8. It indicated that chlorite of laminated quartz vein has more Si than theoretical chlorite. Compositional variations in chlorite from laminated quartz vein are caused by phengitic or Tschermark substitution (Al3+,VI+Al3+,IV <-> (Fe2+ or Mg2+)VI+(Si4+)IV) and octahedral Fe2+ <-> Mg2+ (Mn2+) substitution. Therefore, laminated quartz vein and alteration minerals of the Unsan Au deposit was formed during ductile shear stage of orogeny.

• Journal of IKEEE
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• v.27 no.4
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• pp.630-635
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• 2023

SiC is replacing the position of silicon in the power semiconductor field due to its superior resistance to adverse conditions such as high temperature and high voltage compared to silicon, which occupies the majority of existing industrial fields. In this paper, the gate of 4H-SiC Planar MOSFET, one of the power semiconductor devices, was formed with aluminium to make the contrast and parameter values consistent with polycrystalline Si gate, and the threshold voltage, breakdown voltage, and IV characteristics were studied by varying the channel doping concentration of SiC MOSFET.

• Analytical Science and Technology
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• v.21 no.2
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• pp.143-147
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• 2008

U(IV) ion, the valance state of uranium presumed at in a deep-depth disposal of a spent fuel, was prepared and separated from U(VI) ion. In order to prepare U(IV) ion, tests were performed by adding several reducing agents into a uranyl solution or by dissolution of uranium oxide in a mixed acid added with a reducing agent. The valance states of the uranium in the prepared solutions were identified by separating two ions with a Dowex AG 50W-X8 cation exchange resins and measuring the solutions using a laser-induced fluorescence spectroscopy. However, U(IV) and U(VI) were not separated by a Lichroprep Si60 exchange resin in the same separation condition of Pu(IV) and Pu(VI).

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.854-859
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• 2016

Recently, GeSn is drawing great deal of interests as one of the candidates for group-IV-driven optical interconnect for integration with the Si complementary metal-oxide-semiconductor (CMOS) owing to its pseudo-direct band structure and high electron and hole mobilities. However, the large lattice mismatch between GeSn and Si as well as the Sn segregation have been considered to be issues in preparing GeSn on Si. In this work, we deposit the GeSn films on Si by DC magnetron sputtering at a low temperature of $250^{\circ}C$ and characterize the thin films. To reduce the stresses by GeSn onto Si, Ge buffer deposited under different processing conditions were inserted between Si and GeSn. As the result, polycrystalline GeSn domains with Sn atomic fraction of 6.51% on Si were successfully obtained and it has been demonstrated that the Ge buffer layer deposited at a higher sputtering power can relax the stress induced by the large lattice mismatch between Si substrate and GeSn thin films.