• 전자통신동향분석
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• 제36권3호
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• 한국세라믹학회지
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• 제30권4호
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• pp.316-324
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• 1993

Three types of dispersed, coated and mechanically mixed SiC reinforced Al2O3 composite powders were used to investigate the effect of composite powder type on sintering characteristics and properties of Al2O3-SiC composites. Sinterability of coated type composite powders was superior to that of other composite powders when they were pressureless sintered at 1500~1$700^{\circ}C$ for 2h in Ar atmosphere. However, sinterabilities (>98% TD) of each type of composite powders were similar when they were hot pressed at 180$0^{\circ}C$ for 1h under 30MPa in N2 atmosphere. SiC powders were randomly distributed in the specimen prepared from dispersed type composite powders, whereas homogeneously distributed for coated type specimens. It was found that SiC powders inhibited the grain growth of Al2O3, and fracture toughness was increased by the increment of crack growth resistance due to residual stress by secondary SiC particles within Al2O3 grains.

• 한국결정학회:학술대회논문집
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• 한국결정학회 2002년도 정기총회 및 추계학술연구발표회
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• pp.27-27
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• 2002

[Cp＊Rh(H₂O)₃](OTf)₂ (1) reacts with a stoichiometric amount of A and B [ A = Me₃SiN₃, B = 4,4'-bipridyl, (2a), A = Me₃SiNCO, B = 4,4'-bipridyl (2b)] in acetone at room temperature for 3 h to give the supramolecular complexes [Cp＊₄Rh₄(μ-A)₄(μ-B)₂] [A = Me₃SiN₃, B = 4,4'-bipridyl, (2a), A = Me₃SiNCO, B = 4,4'-bipridyl (2b)]. Complexes 2a and 2b have been structurally characterized by X-ray diffraction.

• 융복합기술연구소 논문집
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• 제5권1호
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• pp.1-5
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• 2015

SI thermochemical hydrogen production process achieves water splitting into hydrogen and oxygen through three chemical reactions. The process is comprised of three sections and one of them is HI decomposition into $H_2$ and $I_2$ called as Section III. The production of $H_2$ included processes involving EED for concentrating a product stream from Section I. Additionally an $I_2$ crystallization would be considered to reduce burden on EED by removing certain amount of $I_2$ out of a process stream prior to EED. In this study, the current thermodynamic model of SI process was briefly described and the calculation results of the applied Electrolytes NRTL model for phase equilibrium calculations was illustrated for ternary systems of Section III. We calculated temperature and heat duty of an $I_2$ crystallizer and heat duty of heaters using UVa model and heat balance equation of simulation tool. The results were expected to be used as operation information in optimizing HI decomposition process and setting up material balance throughout SI process.

• 한국지구과학회지
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• 제43권4호
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• pp.532-538
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• 2022

Under anoxic conditions, this study investigated removal of dissolved As(III) by Si and Al oxides including natural sand, chemically washed sand (silica), alumina, and activated alumina. Despite the similar surface area, natural sand showed greater extents of As(III) sorption than chemically washed sand. This was likely due to the high reactivity of Fe(oxyhydr)oxide impurities on the surface of natural sand. For both sands, As(III) sorption was the greatest at pH 7.1, in agreement with the weakly dissociating tendency of arsenous acid. Also, the least sorption was observed at pH 9.6. At basic pH, elevated silicate, which originated from the dissolution of silica in sands, would compete with As(III) for sorption. Due to the highest surface area, activated alumina was found to quantitatively immobilize the initially added As(III) (6.0×10^-7-2.0×10^-5 M). Alumina showed As(III) sorption compared to or greater than chemically washed sand, although the former had less than 6% of the surface of area the latter. The greater reactivity of alumina than chemically washed sand can be explained by using the shared charge of oxygen.

• 한국세라믹학회지
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• 제43권9호
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• pp.582-587
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• 2006

Decomposition behavior of $ferro-Si_3N_4$was investigated with varying temperature and holding time in mud components for high temperature refractory applications. Porosities gradually increased with increasing temperature and holding time due to the carbothermal reduction of $Si_3N_4\;and\;SiO_2$. Silicon monoxide (SiO) as a intermediate resulted from evaporation of $Si_3N_4\;and\;SiO_2$ reacted with C sources to generate needle-like ${\beta}-SiC$ and Fe in $Si_3N_4$ acted as a catalyst in order to enhance growth of SiC grain with the preferred orientation. SiC generation yield increased with increasing holding time, all of the $Si_3N_4\;and\;SiO_2$ affected on SiC formation up to 2h. However, SiC generation was only dependent on residual $SiO_2$ over 2h, because the carbothermal reduction reaction of $Si_3N_4$ was no longer possible at that time.

• Bulletin of the Korean Chemical Society
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• 제16권1호
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• pp.30-33
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• 1995

UV photolysis of the titled polysilane (Me3Si)3SiMe (I) in the presence of a trapping agent of 2-propenol has been performed to investigate the interaction of short-lived silicon species formed from the photolysis of I with 2-propenol. Product studies show that the Me(Me3Si)Si: (II) and (Me3Si)3Si${\cdot}$(III) are primarily formed as the major reactive species which saturate their valencies via O-H insertion and H-abstraction, respectively. Some products are unstable toward further secondary reaction such as photodissociation and intermolecular reaction. The PM3 semiempirical calculations are performed to deduce the energetics of the photoinduced chemical reactions of I with the substrate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.323-323
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• 2014

기존의 태양전지 기술은 기술 장벽이 매우 낮고 대량 생산을 통한 단가 절감하는 구조를 가지고 있어 대규모 자본을 가진 후발 기업에게 잠식되기 쉽다. 그러나, III-V족 화합물 반도체를 이용한 집광형 고효율 태양전지는 기술 장벽이 매우 높은 기술 집약 산업이므로 독자적인 기술을 확보하게 되면 독점적인 시장을 확보 할 수 있어 미래 고부가 가치 산업으로 적합하다. 특히 III-V족 화합물 반도체 태양전지는 III족 원소(In, Ga, Al)와 V족 원소(As, P)의 조합으로 0.3 eV~2.5 eV까지 밴드갭을 가지는 다양한 박막 제조가 가능하여 다양한 흡수 대역을 가지는 태양전지 제조가 가능하기 때문에 다중 접합 태양전지 제작이 가능하다. 또한 III-V 화합물 반도체는 고온 특성이 우수하여 온도 안정성 및 신뢰성이 우수하고, 또한 집광 시 효율이 상승하는 특성이 있어 고배율 집광형 태양광 발전 시스템에 가장 적합하다. Si 태양전지의 경우 100배 이하의 집광에서 사용하나, III-V 화합물 반도체 태양전지의 경우 500~1000배 정도의 고집광이 가능하다. 이러한 특성으로 III-V 화합물 반도체 태양전지 모듈 가격을 낮출 수 있고, 따라서 Si 태양전지 시스템과 비교하여 발전 단가 면에서 경쟁력을 확보할 수 있다. III-V 화합물 반도체는 다양한 밴드갭 에너지를 가지는 박막 제조가 용이하고, 직접천이(direct bandgap) 구조를 가지고 있어 실리콘에 비해 광 흡수율이 높다. 또한 터널정션(tunnel junction)을 이용하면 광학적 손실과 전기적 소실을 최소화 하면서 다양한 밴드갭을 가지는 태양전지를 직렬 연결이 가능하여 한 번의 박막 증착 공정으로 넓은 흡수대역을 가지며 효율이 높은 다중접합 태양전지 제작이 가능하다. 이에 걸맞게 본연구에서는 화학기상증착장치(MOCVD)를 이용하여 InAsP 나노선을 코어 쉘 구조로 성장하여 태양전지를 제작하였다. P-type Dopant로는 Disilane (Si2H6)을 전구체로 사용하였다. 또한 Benzocyclobutene (BCB) 폴리머를 이용하여 Dielectric을 형성하였고 Sputtering 방법으로 증착한 ZnO을 투명 전극으로 사용하여 나노선 끝부분과 실리콘 기판에 메탈 전극을 형성하였다. 이를 통해 제작한 태양전지는 솔라시뮬레이터로 측정했을때 최고 7%에 달하는 변환효율을 나타내었다.

• 대한화학회지
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• 제17권6호
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• pp.428-433
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• 1973

음이온교환수지관(Dowex 1${\times}8,\;20cm{\times}3.14cm^2$)을 통하여 0.1M Si(IV), As(V), P(V), S(VI), W(VI), Cr(VI)의 용액을 각기 1ml씩 취하여 섞은 용액 6ml를 다음과 같은 용리액으로 용리시켜 정량적으로 분리하였다. 이때에 용리액은 Si(IV), As(V), P(V)에 대하여 0.07M 염산과 0.03M 염화나트륨을 섞은 용액(pH 1.3)을, S(VI), W(VI), Cr(VI)에 대하여 0.6M 염화나트륨과 0.3M 수산화나트륨을 섞은 용액을 사용하였다. 이때에 함께 용출된 P(V)와 As(V)의 혼합액은 아황산나트륨용액으로 처리하여 As(V)를 As(III)으로 환원시킨다음 0.1N 아황산나트륨용액(pH 3.48)으로 용리하여 분리하였다. 많은 양의 철(97% 이상)과 Si(IV), As(V), S(VI), P(V), W(VI)이 혼합된 용액은 양이온교환수지관(Dowex 50w${\times}12,\;30cm{\times}3.14cm^2$)을 통하여 디메틸술포옥시드와 질산나트륨의 혼합용리액으로 용리하여 철을 먼저 분리하고 다시 음이온들은 음이온교환수지관을 통하여 분리하였다. 철강중에 들어있는 음이온 성분들도 같은 방법으로 분리할 수 있었다.

• 대한화학회지
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• 제43권1호
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• pp.52-57
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• 1999

In($C_6F_5)_3{\cdot}D(D=CH_3CN$, O($C_2H_5)_2$)와 ($CH_3)_3SiC_6F_5$/CsF, $C_6F_5$MgBr 또는 Cd($C_6F_5)_2$을 반응시켜 [In($C_6F_5)_4$]- 음이온 화합물을 합성하였으나, 이들 indium(III) 음이온 화합물들은 온도에 민감하고 습기에 대해 불안정하다. 안정한 indium(III) 음이온 착물은 PNPCl(PNP=bis(triphenylphosphino)ammonium)과의 양이온 치환반응시켜 얻었으며, 관 크로마토 그래피를 이용하여 분리 정제하였다. 합성된 화합물의 특성은 핵자기 공명 분석법, 적외선 분광분석법, 분자량 측정, DTA/TG 그리고 원소분석법을 이용하여 조사하였다.