• E2M - 전기 전자와 첨단 소재
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• 제3권2호
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• pp.105-114
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• 1990

SiO$_{2}$막을 NH$_{3}$분위기에서 급속열처리 하여 nitroxide막을 생성시키고 그 전기적 특성을 조사하였다. 굴절율과 유전율은 열처리시간과 온도에 따라 증가 하였으며 IR스펙트럼분석으로 SiO$_{2}$박이 질화된 것을 확인하였다. 절연파괴내력은 대체로 SiO$_{2}$막보다 우수하였으며 .+-.BT 처리와 C-V측정의 결과 nitroxide막이 초기 산화막보다 고전계 stress에 대해 안정한 특성이 나타났다. MIS 다이오드의 1/f 잡음 특성은 C-V 측정결과와 비슷한 경향을 나타내어 1/f 잡음특성이 박막의 계면특성과 밀접한 관련성이 있음을 알 수 있었다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.114-118
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• 2006

In this paper, the effect of base and collector structures on DC, small signal characteristics of SiGe HBTs fabricated by RPCVD was investigated. The structure of SiGe HBTs was designed into four types as follows: SiGe HBT structures which are standard, apply extrinsic-base SEG selective epitaxial growth (SEG), apply selective collector implantation (SCI), and apply both extrinsic-base SEG and SCI. We verified the devices could be applied to the fabrication of RFIC chip through a fully integrated 2.4 GHz down-conversion mixer.

• 한국자동차공학회논문집
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• 제8권5호
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• pp.114-120
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• 2000

Friction forces of piston rings for a typical SI engine were independently measured while excluding the effects of cylinder pressure, oil starvation and piston secondary motion using a floating liner system. Friction patterns, represented by the measured friction forces, were classified into five frictional modes with regard to the combination of predominant lubrication regimes(boundary, mixed and hydrodynamic lubrication) and stroke regions(mid-stroke and dead centers). The modes were identified on the Stribeck diagram of the dimensionless bearing parameter and friction coefficients which were evaluated at the mid-stroke and at the dead centers. And the frictional modes were estimated to the full operation range. The compression rings behave in the mode where hydrodynamic lubrication is dominant at the mid-stroke and mixed lubrication is dominant at the dead centers under steady operating conditions. However, the oil control ring behave in the mode where mixed lubrication is dominant throughout the entire stroke.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권2호
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• pp.111-114
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• 2008

We studied the influence of nanocrystalline silicon (nc-Si) thin film thickness on top gate nc-Si thin film transistor (TFT) fabricated at $180^{\circ}C$. The nc-Si thickness affects the characteristics of nc-Si TFT due to the nc-Si growth similar to a columnar. As the thickness of nc-Si increases from 40 nm to 200 nm, the grain size was increased from 20 nm to 40 nm. Having a large grain size, the thick nc-Si TFT surpasses the thin nc-Si TFT in terms of electrical characteristics such as field effect mobility. The channel resistance was decreased due to growth of the grain. We obtained the experimental results that the field effect mobility of the fabricated devices of which nc-Si thickness is 60, 90 and 130 nm are 26, 77 and $119\;cm^2/Vsec$, respectively. The leakage current, however, is increased from $7.2{\times}10^{-10}$ to $1.9{\times}10^{-8}\;A$ at $V_{GS}=-4.4\;V$ when the nc-Si thickness increases. It is originated from the decrease of the channel resistance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.114-115
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• 2003

• 한국막학회:학술대회논문집
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• 한국막학회 1999년도 춘계 총회 및 학술발표회
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• pp.113-114
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• 1999

• Bulletin of the Korean Chemical Society
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• 제27권1호
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• pp.111-114
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• 2006

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.114-115
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• 1998

Photoreflectance (pR) measurement h have been employed to study the uniformity of G GaAs!Si 3" wafer. The PR shows the energy of l light and heavy hole even at room temperature. F From the observed energy of LH and HH, it can b be seen that the center of the wafer is more s stressed than the 뼈ge. On the basis of biaxial t tensile stress the higher and lower. transitions are a attributed to heavy and light hole respectively.vely.

• 한국주조공학회지
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• 제7권2호
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• pp.114-121
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• 1987

In order to determine the plane strain fracture toughness of Al-Si-Cu-Mg alloy castings, solution heat treatments have been conducted at $530^{\circ}C$ for 8hr and aged for 10hr at $145^{\circ}C$, $160^{\circ}C$ and $175^{\circ}C$. Effects of aging treatment and of Si contents on the fracture toughness have been investigated by a three point loaded bend test, using the artificial notch. The results obtained are as follows; 1) The fracture toughness is appreciably affected by the aging treatment temperature and Si contents. The specimen aged for 10hr at $145^{\circ}C$ has the highest fracture toughness. 2) Increasing Si contents from 5% to 9% results in decrease of fracture toughness. 3) Increasing the aging temperature and Si contents, C.O.D. value was decreased. The specimen aged for 10hr at $145^{\circ}C$ has the highest C.O.D. value. 4) Dimple patterns were observed in the specimens of containing under 7% Si, while mixed cleavage-dimple patterns in those of over 8% Si.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.