• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.59-59
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• 2010

Graphene is a 2-D sheet of $sp^2$-bonded carbon arranged in a honeycomb lattice. This material has attracted major interest, and there are many ongoing efforts in developing graphene devices because of its high charge mobility and crystal quality. Therefore clear understanding of the substrate effect and mechanism of synthesis of graphene is important for potential applications and device fabrication of graphene. In a published paper in J. Phys. Chem. C (2008), the effect of substrate on the atomic/electronic structures of graphene is negligible for graphene made by mechanical cleavage. However, nobody shows the interaction between Ni substrate and graphene. Therefore, we have studied this interaction. In order to studying these effect between graphene and Ni substrate, We have observed graphene synthesized on Ni substrate and graphene transferred on $SiO_2$/Si substrate through Raman spectroscopy. Because Raman spectroscopy has historically been used to probe structural and electronic characteristics of graphite materials, providing useful information on the defects (D-band), in-plane vibration of sp2 carbon atoms (G-band), as well as the stacking orders (2D-band), we selected this as analysis tool. In our study, we could not observe the doping effect between graphene and Ni substrate or between graphene and $SiO_2$/Si substrate because the shift of G band in Raman spectrum was not occurred by charge transfer. We could noticed that the bonding force between graphene and Ni substrate is more strong than Van de Waals force which is the interaction between graphene and $SiO_2$/Si. Furthermore, the synthesized graphene on Ni substrate was in compressive strain. This phenomenon was observed by 2D band blue-shift in Raman spectrum. And, we consider that the graphene is incommensurate growth with Ni polycrystalline substrate.

• Journal of Science Education
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• v.44 no.1
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• pp.92-111
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• 2020

The 2015 revised science curriculum and NGSS (Next Generation Science Standard) suggest computational thinking as an inquiry skill or competency. Particularly, concern in computational thinking has increased since the Ministry of Education has required software education since 2014. However, there is still insufficient discussion on how to integrate computational thinking in science education. Therefore, this study aims to prepare a way to integrate computational thinking elements into scientific inquiry by analyzing the related literature. In order to achieve this goal, we summarized various definitions of the elements of computational thinking and analyzed general problem solving process and scientific inquiry process to develop and suggest the model. We also considered integrated problem solving cases from the computer science field and summarized the elements of the Computational Thinking-Scientific Inquiry (CT-SI) model. We asked scientists to explain their research process based on the elements. Based on these explanations from the scientists, we developed 'Problem-finding' CT-SI model and 'Problem solving' CT-SI model. These two models were reviewed by scientists. 'Problem-finding' model is relevant for selecting information and analyzing problems in the theoretical research. 'Problem solving' is suitable for engineering problem solving process using a general research process and engineering design. In addition, two teachers evaluated whether these models could be used in the secondary school curriculum. The models we developed in this study linked with the scientific inquiry and this will help enhance the practices of 'collecting, analyzing and interpreting data,' 'use of mathematical thinking and computer' suggested in the 2015 revised curriculum.

• Journal of Magnetics
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• v.11 no.2
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• pp.77-82
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• 2006

The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

• Journal of the Mineralogical Society of Korea
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• v.13 no.1
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• pp.37-43
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• 2000

Fourier transform 적외선 분광기를 사용하여 원적외선 (<200 cm-1) 영역과 중간적외선 (400-4000 cm-1) 영역에서 열수기원 일라이트의 층간 결합상태와 화학조성간의 관계를 해석하였다. 중간 적외선 영역에서는 2M1 다형의 Al-O-Al 및 Al-O-Si 결합이 1Md 형의 것보다 강한 것으로 나타났다. 원적외선 영역에서는 세 종류의 K-O 결합이 111-114, 135-143 및 167-168 cm-1에서 인지되었다. 2M1과 1Md 다형간의 가장 큰 차이는 2M1형의 층간결합이 1Md형보다 상대적으로 강하여 K가 층간에 보다 강하게 결합되어 있다는 점이며, 두 다형의 층간결합의 상태는 서로 상이하다. K-Oinner band는 (OH) stretching band의 진동수가 높을수록 커지며, (OH) stretching band는 팔면체의 양이온 (Fe+Mg)의 함량에도 영향을 받는 것으로 나타났다.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 1999.10a
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• pp.111-120
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• 1999

Although the concept of viewing knowledge as a critical resource has been widely accepted in prior studies, it is not fully understood how to acquire available knowledge in order to improve organizational effectiveness. However, it si sure that organizational knowledge management should pursuit the achievement of the business goal by delivering relevant and useful information to the right person at the right time. Group Support System (GSS) can play an important role to transfer scatter information into meaningful business knowledge for supporting strategic corporate decision-making. This study proposes a fuzzy GSS framework for acquiring workgroup knowledge from individual memory and aggregating workgroup knowledge to organizational knowledge. This study also proposes an architecture to support the fuzzy GSS framework. The architecture consists of user agents, information management agents, and a fuzzy model manager. To illustrate how the fuzzy GSS framework can be used to support the whole process of organization knowledge acquisition, an Internet-based GSS was developed and applied in a marketing decision process. It showed that the framework was effective for acquiring organizational knowledge.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.369-369
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• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.49.1-49.1
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• 2010

본 연구에서는 증착법에 의해 제조된 다결정 실리콘을 이용한 태양전지 제작과 관련하여 다결정 실리콘 씨앗층 제조를 위한 기판에 대하여 연구를 수행하였다. 다결정 실리콘 씨앗층을 제조할 수 있는 기술중 aluminum-induced layer exchange(ALILE) 공정을 이용하여 다결정 실리콘 씨앗층을 제조하였다. glass/Al/oxide/a-Si 구조로 알루미늄과 비정질 실리콘 계면에 알루미늄 산화막을 다양한 두께로 형성시켜, 알루미늄 유도 결정화에서 산화막의 두께가 결정화 특성에 미치는 영향, 결정결함, 결정크기에 대하여 연구하였다. 형성된 다결정 실리콘 씨앗층 막의 특성은 OM, SEM, FIB, EDS, Raman spectroscopy, XRD, EBSD 을 이용하여 분석하였다. 그 결과 산화막의 두께가 증가할수록 결함도 함께 증가하였다. 16nm 두께의 산화막 구조에서 <111> 방향의 우선배향성을 가진, $10{\mu}m$의 sub-grain 결정립을 갖는 씨앗층을 제조 하였다.

• Journal of the Korean Society for Nondestructive Testing
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• v.14 no.3
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• pp.157-171
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• 1994

A scanning tunneling microscope has been built, which can resolve atomic arrangements of conductors and semiconductors in ultra high vacuum below $10^{-11}$ Torr. Its background and operational principles are reviewed and the guide lines in building the scanning tunneling microscope are shown. The results of measurements for highly oriented pyrolytic graphite and Si(111) surface are presented.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.105-109
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• 1997

The effects of surface conditions of the C-2 cemented carbide substrate on the adhesion of diamond film were investigated. The substrates were pretreated for different times with Murakami's reagent and then the acid solution of an H2SO4-H2O2. The adhesion strength was estimated by a peeling area around the Rockwell-A indentation. The cutting performance of the diamond-coated tools was evaluated by measuring flank wears in dry turning of Al-17% Si alloy. The morphology of deposited diamond crystallites was dominated by (111) and (220) surfaces with a cubooctahedral shape. The diamond film quality was hardly affected by the surface conditions of the substrate. The variation of tool life with longer substrate etching times resulted from a compromies between the increase of film adhesion at the interface and the decrease of toughness at the substrate surface. The coated tools were mainly deteriorated by chipping and flaking of the diamond film form a lock of adhesion strength, differently from the wear phenomena of PCD tools.

• Journal of the Korean Ceramic Society
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• v.28 no.10
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• pp.777-784
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• 1991

Diamond films have been growth by the hot-filament chemical vapor deposition (HFCVD) using CH4 and H2 gaseous mixture on the Si substrate. The experimental results indicated that the deposits were pure diamond and contained no amount of non-diamond phases such as amorphous carbon or graphite. The diamond films were deposited well at the conditions: the filament temperature of 210$0^{\circ}C$, the substrate temperature of 77$0^{\circ}C$, the CH4 concentration of 1.76%, the reactor pressure of 30 torr, and the deposition time of 7 hr. At this growth condition, the maximum deposition rate was 2 ${\mu}{\textrm}{m}$/hr. X-ray diffraction patterns and texture coefficient results showed that preferred orientation of the diamond films was {111} orientation under all experimental conditions.