• Analytical Science and Technology
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• v.5 no.3
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• pp.303-308
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• 1992

Initial reactions of Ti and Si have been studied to examine the surface roughness of titanium silicide. Formation mechanism has been explored with in-situ measurement tools such as AES(Auger electron spectroscopy) and LEED (low energy electron diffraction). One or two monolayers of Ti films have been deposited in ultrahigh vacuum on atomically clean Si(111) substrates. Atomically clean Si substrates which are reconstructed $7{\times}7$ Si(111) have been obtained after in-situ heat cleaning in ultrahigh vacuum. Deposition of the films were monitored by a quartz cuystal oscillator and the Ti films were analyzed with in-situ AES and LEED. The in-situ measurements show that the initial reactions of Ti and Si occur at room temperature and form a disordered layer. At low temperatures($200^{\circ}C{\sim}300^{\circ}C$) intermixing of Ti and Si is detected by AES. Substrate $1{\times}1$ LEED patterns are displayed after $400^{\circ}C$ anneal. This indicates that the disordered layer has transformed to form an ordered surface. The reappearance of the $7{\times}7$ LEED pattern in observed with further high temperature anneals and indicates three dimensional titanium silicide island formation.

• Journal of the Korean Society of Industry Convergence
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• v.7 no.4
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• pp.349-354
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• 2004

The growth mode of the Si layers which were grown on Si(111) by using Ag as surfactant were investigated by intensity oscillations of the RHEED specular spot at the different temperatures. we found that the introduction of Ag as the surfactant alters the growth mode from a three-dimensional clustering mechanism to a two-dimensional layer-by-layer growth. In the growth of Si layers on Si(111) with a surfactant Ag, At $450^{\circ}C$, RHEED intensity oscillation was very stable and periodic from early stage of deposition to 32 ML. RHEED patterns during homoepitaxial growth at $450^{\circ}C$ was changed from $7{\times}7$ structure into ${\sqrt{3}}{\times}{\sqrt{3}}$ structures. Since the ${\sqrt{3}}{\times}{\sqrt{3}}$ structure include no stacking fault, the stacking fault layer seems to be reconstructed into normal stacking one at transition from the $7{\times}7$ structure to a ${\sqrt{3}}{\times}{\sqrt{3}}$ one. We also found that the number of the intensity oscillation of the specular spot for Si growth with a surfactant Ag was more than for Si growth without a surfactant. This result may be explained that the activation energy decrease for the surface diffusion of Si atoms due to segregation of the surfactant toward the growing surface.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.433-433
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• 2011

Since the concept of graphene was established, it has been intensively investigated by researchers. The unique characteristics of graphene have been reported, the graphene attracted a lot of attention for material overcomes the limitations of existing semiconductor materials. Because of these trends, economical fabrication technique is becoming more and more important topic. Especially, the epitaxial growth method by sublimating the silicon atoms on Silicon carbide (SiC) substrate have been reported on the mass production of high quality graphene sheets. Although SiC exists in a variety of polytypes, the 3C-SiC polytypes is the only polytype that grows directly on Si substrate. To practical use of graphene for electronic devices, the technique, forming the graphene on 3C-SiC(111)/Si structure, is much helpful technique. In this paper, we report on the growth of graphene on 3C-SiC(111) surface. To investigate the morphology of formed graphene on the 3C-SiC(111) surface, the radial distribution function (RDF) was calculated using molecular dynamics (MD) simulation. Through the comparison between the kinetic energies and the diffusion energy barrier of surface carbon atoms, we successfully determined that the graphitization strongly depends on temperature. This graphitization occurs above the annealing temperature of 1500K, and is also closely related to the behavior of carbon atoms on SiC surface. By analyzing the results, we found that the diffusion energy barrier is the key parameter of graphene growth on SiC surface.

• Bulletin of the Korean Chemical Society
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• v.25 no.12
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• pp.1822-1828
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• 2004

Electrochemical, in situ electrochemical scanning tunneling microscope (EC-STM), and attenuated total reflectance-FTIR (ATR-FTIR) spectroscopic methods were employed to investigate the preparation of atomically flat Si(111)-H surface in ammonium fluoride solutions. Electrochemical properties of atomically flat Si(111)-H surface were characterized by anodic oxidation and cathodic hydrogen evolution with the open circuit potential (OCP) of ca. -0.4 V in concentrated ammonium fluoride solutions. As soon as the natural oxide-covered Si(111) electrode was immersed in fluoride solutions, OCP quickly shifted to near -1 V, which was more negative than the flat band potential of silicon surface, indicating that the surface silicon oxide had to be dissolved into the solution. OCP changed to become less negative as the oxide layer was being removed from the silicon surface. In situ EC-STM data showed that the surface was changed from the initial oxidecovered silicon to atomically rough hydrogen-terminated surface and then to atomically flat hydrogenterminated surface as the OCP moved toward less negative potentials. The atomically flat Si(111)-H structure was confirmed by in situ EC-STM and ATR-FTIR data. The dependence of atomically flat Si(111)-H terrace on mis-cut angle was investigated by STM, and the results agreed with those anticipated by calculation. Further, the stability of Si(111)-H was checked by STM in ambient laboratory conditions.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.38-44
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• 1997

Epitaxial growth of SiC films on Si(111) substrates without carbonization was carried out n the temperature range of 900-100$0^{\circ}C$ under high vacuum conditions by single source chemical vapor deposition (CVD) of 1,3-disilabutane (H$_3$SiCH$_2$SiH$_2$$CH_3$). The monocrystalline nature of the films was confirmed by XRD, RHEED and cross-sectional TED. Cross-sectional TEM image indicated that no void exists and the boundary is clear and smooth at the SiC-Si(111) interface. RBS and AES analyses also showed that the films are stoichiometric and homogeneous in depth, From the results, this single source growth techniqe of using 1,3-disilabutane has been found suitable and effective for epitaxial growth of stoichiometric SiC on Si(111) without carbonization at temperatures below 100$0^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.3
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• pp.65-71
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• 1999

The effects of mask materials and etching solutions on the dimensional accuracy of V-groove were studied for the alignment between optoelectronic devices and optical fibers in optical packaging. PECVD nitride, LPCVD nitride, or thermal oxide($SiO_2$) was used as a mask material. The anisotropic etching solution was KOH(40wt%) or the mixture of KOH and IPA. LPCVB nitride has the best etching selectivity and thermal oxide was etched most rapidly in KOH(40wt%) at $85^{\circ}C$ among the mask materials studied here. The V-groove size enlarged than the designed value. This phenomenon was due to the undercutting benearth the mask layer from the etching toward Si (111) plane. The etch rate of (111) plane wart 0.034 - 0.037 $\mu\textrm{m}$/min in KOH(40wt%). This rate was almost same regardless of mask materials. When IPA added to KOH(40wt%), the etch rate of (100) plane and (111) plane decreased, but etching ratio of (100) to (111) plane increased. Consequently, the undercutting phenomenon due to etching toward (111) plane decreased and the size of V-groove could be controlled more accurately.

• Korean Journal of Materials Research
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• v.7 no.8
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• pp.679-686
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• 1997

P-type Si(111)기판 위에 3C-SiC박막 성장시 TMS(tetramethylsilane)유량, 반응온도, 반응압력, 가스공급방법등 다양한 성장변수에 따른 박막의 결정성변화를 연구하였다. 증착된 막은 모두 (111)방향성만을 나타내었고, free Si, C의 존재는 관찰할 수 없었다. TMS 유량 0.5 sccm에서, 1100-120$0^{\circ}C$의 반응온도에서 , 반응압력 12-50Torr 조건에서 비록 dislocation과 twin등이 발결되었으나 단결정 3C-SiC 박막을 성장시킬 수 있었으며, 박막의 결정성은 기판에 흡착된 Si-종과 C-종이migration할 수 있는 시간과 에너지에 크게 영향 받음을 확인할 수 있었다. 또한 SiC/Si계면에서 carbonization공정에서 관찰되는 것으로 알려진 void를 관찰할 수 있었으며, 이러한 void의 발생은 기체공급방법을 달리함으로서 제거할 수 있음을 확인할 수 있었다.

• Korean Journal of Materials Research
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• v.10 no.11
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• pp.738-741
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• 2000

Univorm epitaxial $CoSi_2$layers have been grown in situ on a (100) Si substrate at temperatures near$ 600^{\circ}C$ by reactive chemical vapor deposition of cyclopentadienyl dicarbonyl cobalt, (Co(η(sup)5-C(sub)5H(sub)5) ($CO_2$). The growth kinetics of an epitaxial $CoSi_2$layer on al Si(100) substrate was investigated at temperatures ranging from 575 to $650^{\circ}C$. In initial deposition stage, plate-like discrete $CoSi_2$spikes were nucleated along the <111> directions in (100) Si substrate with a twinned structure. The discrete $CoSi_2$plates with both {111} and (100) planes grew into an epitaxial layer with a flat interface on (100) Si. For epitaxial $CoSi_2$growth on (100) Si, the activation energy of the parabolic growth was found to be 2.82 eV. The growth rate seems to be controlled by the diffusion of Co through the $CoSi_2$layer.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.34-38
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• 2011

In this study, the effects of an annealed buffer layer with different thickness on heterojunction diodes based on the ZnO/ZnO/p-Si(111) systems were reported. The effects of an annealed buffer layer with different thickness on the structural, optical, and electrical properties of zinc oxide (ZnO) films on p-Si(111) were also studied. Before zinc oxide (ZnO) deposition, different thicknesses of ZnO buffer layer, 10 nm, 30 nm, 50 nm and 70 nm, were grown on p-Si(111) substrates using a radio-frequency sputtering system; samples were subsequently annealed at $700^{\circ}C$ for 10 minutes in $N_2$ in a horizontal thermal furnace. Zinc oxide (ZnO) films with a width of 280nm were also deposited using a radio-frequency sputtering system on the annealed ZnO/p-Si (111) substrates at room temperature; samples were subsequently annealed at $700^{\circ}C$ for 30 minutes in $N_2$. In this experiment, the structural and optical properties of ZnO thin films were studied by XRD (X-ray diffraction), and room temperature PL (photoluminescence) measurements, respectively. Current-voltage (I-V) characteristics were measured with a semiconductor parameter analyzer. The thermal tensile stress was found to decrease with increasing buffer layer thickness. Among the ZnO/ZnO/p-Si(111) diodes fabricated in this study, the sample that was formed with the condition of a 50 nm thick ZnO buffer layer showed a strong c-axis preferred orientation and I-V characteristics suitable for a heterojunction diode.

• Proceedings of the Korean Magnestics Society Conference
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• 1999.04a
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• pp.38-39
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• 1999