• 자원환경지질
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• 제30권1호
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• pp.35-49
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• 1997

The coal formation of the Deokpyeong area are interbedded along metapelites of the Ogcheon Supergroup, which are composed mainly of graphite, quartz, muscovite and associated with small amounts of biotite, chlorite, pyrite and barite. The ratios of $SiO_2/Al_2O_3$, $Al_2O_3/Na_2O$ and $K_2O/Na_2O$ of the coaly metapelite are variable and wide range from 1.80 to 10.21, from 27.8 to 388.8 and from 7.6 to 61.8, respectively. These coal formation were deposited in basin of marine environments, and the REE of these rocks are not influenced with metamorphism and hydrothermal alterations on the basis of $Al_2O_3$ versus La, La against Ce, the ratios of La/Ce (0.19 to 0.99) and Th/U (0.02 to 4.75). These rocks also show much variation in $La_N/Yb_N$ (1.19 to 22.89), Th/Yb (0.14 to 21.43) and La/Th (0.44 to 13.67), and their origin is explained by derivation from a mixture of sedimentary and igneous rocks. The wide range in trace and REE element characteristics as Co/Th (0.12 to 2.78), La/Sc (0.33 to 10.18), Sc/Th (0.57 to 5.73), V/Ni (8 to 2347), Cr/V (0.02 to 0.67) and Ni/Co (1.56 to 32.95) of these coaly metapelites argues for inefficient mixing of the various source lithologies during sedimentation. Deep to pale green barium-vanadium muscovites (vanadium-oellacherite) have been found in this coal formations. Modes of occurrence and grain size of muscovite are heterogeneous, but most of the barium and vanadium-bearing muscovites occur along the boundaries between graphite and quartz grains, ranging from 200 to $350{\mu}m$ in length and from 40 to $60{\mu}m$ in width. Results of X-ray diffraction data of the minerals characterized to be monoclinic system with $a=5.249{\AA}$, $b=8.939{\AA}$, $c=20.924{\AA}$ and ${\beta}=95.894^{\circ}$. Representative chemical formula of the muscovite was $(Na_{0.09}K_{1.44}Ba_{0.46})(Al_{2.75}Ti_{0.07}V_{0.56}Fe_{0.08}Mg_{0.50})(Si_{6.12}Al_{1.88})O_{22}$. The V possibly substitute octahedral Al, and the Ba is coupled substitution of $K^+Si^{4+}=Ba^{2+}Na^+Ca^{2+}$, which compositional ranges of V and Ba are from 0.42 to 0.69 and from 0.34 to 0.56 based on $O_{22}$, respectively. Formation mechanism of the barium-vanadium muscovites in the coaly metapelite is shown that the formed by high pressure and temperature from regional metamorphism origanated during diagenesis at the interface between a basinal brine and organic matter.

• 한국작물학회지
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• 제50권4호
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• pp.247-255
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• 2005

ice yield and plant growth response to nitrogen (N) fertilizer may vary within a field, probably due to spatially variable soil conditions. An experiment designed for studying the response of rice yield to different rates of N in combination with variable soil conditions was carried out at a field where spatial variation in soil properties, plant growth, and yield across the field was documented from our previous studies for two years. The field with area of 6,600 m2 was divided into six strips running east-west so that variable soil conditions could be included in each strip. Each strip was subjected to different N application level (six levels from 0 to 165kg/ha), and schematically divided into 12 grids $(10m \times10m\;for\;each\;grid)$ for sampling and measurement of plant growth and rice grain yield. Most of plant growth parameters and rice yield showed high variations even at the same N fertilizer level due to the spatially variable soil condition. However, the maximum plant growth and yield response to N fertilizer rate that was analyzed using boundary line analysis followed the Mitcherlich equation (negative exponential function), approaching a maximum value with increasing N fertilizer rate. Assuming the obtainable maximum rice yield is constrained by a limiting soil property, the following model to predict rice grain yield was obtained: $Y=10765{1-0.4704^*EXP(-0.0117^*FN)}^*MIN(I-{clay},\;I_{om},\;I_{cec},\;I_{TN},\; I_{Si})$ where FN is N fertilizer rate (kg/ha), I is index for subscripted soil properties, and MIN is an operator for selecting the minimum value. The observed and predicted yield was well fitted to 1:1 line (Y=X) with determination coefficient of 0.564. As this result was obtained in a very limited condition and did not explain the yield variability so high, this result may not be applied to practical N management. However, this approach has potential for quantifying the grain yield response to N fertilizer rate under variable soil conditions and formulating the site-specific N prescription for the management of spatial yield variability in a field if sufficient data set is acquired for boundary line analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.67-67
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• 2009

Due to the scaling down of the dielectrics thickness, the leakage currents arising from electron tunneling through the dielectrics has become the major technical barrier. Thus, much works has focused on the development of high k dielectrics in both cases of memories and CMOS fields. Among the high-k materials, $Al_2O_3$ considered as good candidate has been attracting much attentions, which own some good properties as high dielectric constant k value (~9), a high bandgap (~2eV) and elevated crystallization temperature, etc. Due to the easy control of ion energy and flux, low ownership and simple structure of the inductively coupled plasma (ICP), we chose it for high-density plasma in our study. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of BClxOy compound. In this study, the etch characteristic of ALD deposited $Al_2O_3$ thin film was investigated in $BCl_3/N_2$ plasma. The experiment were performed by comparing etch rates and selectivity of $Al_2O_3$ over $SiO_2$ as functions of the input plasma parameters such as gas mixing ratio, DC-bias voltage and RF power and process pressure. The maximum etch rate was obtained under 15 mTorr process perssure, 700 W RF power, $BCl_3$(6 sccm)/$N_2$(14 sccm) plasma, and the highest etch selectivity was 1.9. We used the x-ray photoelectron spectroscopy (XPS) to investigate the chemical reactions on the etched surface. The Auger electron spectroscopy (AES) was used for elemental analysis of etched surface.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.60-63
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) and the effect of additive gases in a $Cl_2$-based inductively coupled plasma. The inert gases were argon, nitrogen, and helium. The maximum etch rates were 44.3, 39.9, and 37.9 nm/min for $Cl_2$(75%)/Ar(25%), $Cl_2$(50%)/$N_2$(50%), and $Cl_2$(75%)/He(25%) gas mixtures, 600 W radiofrequency power, 150 W bias power, and 2 Pa process pressure. We obtained the maximum etch rate by a combination of chemical reaction and physical bombardment. A volatile compound of Zn-Cl. achieved the chemical reaction on the surface of the ZnO thin films. The physical etching was performed by inert gas ion bombardment that broke the Zn-O bonds. The highly oriented (002) peak was determined on samples, and the (013) peak of $Zn_2SiO_4$ was observed in the ZnO thin film sample based on x-ray diffraction spectroscopy patterns. In addition, the sample of $Cl_2$/He chemistry showed a high full-width at half-maximum value. The root-mean-square roughness of ZnO thin films decreased to 1.33 nm from 5.88 nm at $Cl_2$(50%)/$N_2$(50%) plasma chemistry.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2011년도 춘계학술대회 논문집
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• pp.618-626
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• 2011

Recent development of related technologies and efficient utilization of the entire country for the purpose of railway construction, and plans are being accelerated. the railway noise has been improved by increasing the high speed railway station, and accelerating the existing trains. Nord2000 which is an overseas noise prediction equation could not be applied directly to the domestic railway vehicles. So the specific vehicles in the Nordic countries which is a similar specification to domestic trains should be selected. Nord2000's accuracy was compared to Schall03, CRN's. Prediction of Ground impedance and Roughness class were carried out at different. In this paper, the result of selected vehicles for Nord2000 was as follows. S-1aX2 was for express trains, N-$^*2c$-3b was for Mugunghwa, S-Pass/wood was for Saemaul, N-4a was for freight trains, N-3a was for subway, the calculation time for Nord2000 took longer than others, in addition, Ground absorption was indispensable to calculate a noise map for Nord2000. As a result, CRN's prediction noise levels at Wonju-si was closest to the measurements. However, the predicted noise levels of Nord2000 was the most accurate.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.200.2-200.2
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• 2013

Yttrium (Y)이 도핑 된 ZnO 나노 구조물을 수열합성법으로 제작하였다. 먼저 졸겔법으로 SiO2/Si 기판 위에 seed layer (Y-doped ZnO ; Y0.02Zn0.98O)를 제작하였으며 5번의 코팅을 진행하여 박막의 두께는 약 180 nm로 측정이 되었다. 그 후 진공 분위기에서 RTA를 이용하여 $500^{\circ}C$에서 3분간 열처리가 진행되었다. 이어서 수열합성법으로 mole 농도를 0.5~1.0 M 범위에서 변화시키며 YZO 시료를 제작하였다. X-ray diffraction (XRD)을 통해서 Y2O3 또는 결함과 관련된 피크는 관찰이 되지 않았으며, 모든 구조물에서 압축응력이 존재하는 알 수 있었으며, field emission scanning electron microscope (FESEM)에서 나노 구조물의 크기와 형태는 수열합성법의 mole 농도에 많은 영향을 받는 것으로 나타났다. Hall effect 측정을 통해서 모든 구조물은 n-type 전도 특성을 가지는 것으로 나타났다. 또한 광학적 특성인 photoluminescence (PL)에서는 수열합성법의 화학식을 고려할 때 Zn가 rich한 상태에서는 Zn interstitial로 존재하는 것으로 나타났고, mole 농도가 높아 질수록 free exciton에 의한 재결합인 UV emission이 우세하게 나타났다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1999년도 추계학술발표회 초록집
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• pp.56-56
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• 1999

For advanced TFT-LCD manufacturing processes, dry etching of thin-film layers(a-Si, $SiN_x$, SID & gate electrodes, ITO etc.) is increasingly preferred instead of conventional wet etching processes. To dry etch Al gate electrode which is advantageous for reducing propagation delay time of scan signals, high etch rate, slope angle control, and etch uniformity are required. For the Al gate electrode, some metals such as Ti and Nd are added in Al to prevent hillocks during post-annealing processes in addition to gaining low-resistivity($<10u{\Omega}{\cdot}cm$), high performance to heat tolerance and corrosion tolerance of Al thin films. In the case of AI-Nd alloy films, however, low etch rate and poor selectivity over photoresist are remained as a problem. In this study, to enhance the etch rates together with etch uniformity of AI-Nd alloys, magnetized inductively coupled plasma(MICP) have been used instead of conventional ICP and the effects of various magnets and processes conditions have been studied. MICP was consisted of fourteen pairs of permanent magnets arranged along the inside of chamber wall and also a Helmholtz type axial electromagnets was located outside the chamber. Gas combinations of $Cl_2,{\;}BCl_3$, and HBr were used with pressures between 5mTorr and 30mTorr, rf-bias voltages from -50Vto -200V, and inductive powers from 400W to 800W. In the case of $Cl_2/BCl_3$ plasma chemistry, the etch rate of AI-Nd films and etch selectivity over photoresist increased with $BCl_3$ rich etch chemistries for both with and without the magnets. The highest etch rate of $1,000{\AA}/min$, however, could be obtained with the magnets(both the multi-dipole magnets and the electromagnets). Under an optimized electromagnetic strength, etch uniformity of less than 5% also could be obtained under the above conditions.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1523-1525
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• 2003

Due to the rapid development of wireless networking system, researches on the communication devices are mainly focus on microwave frequency devices such as filters, resonators, and phase shifters. Among them, Film bulk acoustic resonator (FBAR) has been paid extensive attentions for their high performance. In this research, ZnO thin films were deposited by RF-magnetron sputtering on Al/$SiO_2$/Si wafer and then crystalline properties and surface morphology were examined. To measure crystalline structure and surface morphology X-ray diffraction (XRD) and Scanning Electron Microscope (SEM) were employed. It was showed that crystalline properties of ZnO thin films were strongly dependant on the deposition conditions. As increasing the deposition temperature and the deposition pressures, the peak intensities of ZnO(002) plane were increased until $300^{\circ}C$, then decreased rapidly. At the sputtering conditions of RF power of 213 W and working pressure of 15 m Torr, ZnO film had excellent c-axis orientation, surface morphology, and adhesion to the substrate. In conclusion we optimized smooth surface with very small grains as well as highly c-axis oriented ZnO film for FBAR applications.

• 한국수소및신에너지학회논문집
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• 제19권3호
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• pp.199-208
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• 2008

HI decomposition was conducted using Pt/C-based catalysts with a fixed-bed reactor in the range of 573 K to 773 K. To examine the change of the characteristic properties of the catalysts, $N_2$ adsorption analyser, a X-ray diffractometer(XRD), and a scanning electron microscopy(SEM) were used before and after the HI decomposition reaction. the effect of Pt loading on HI decomposition was investigated by $CO_2$-TPD. HI conversion of all catalysts increased as decomposition temperature increased. The XRD analysis showed that the sizes of platinum particle became larger and agglomerated into a lump during the reaction. From $CO_2$-TPD, it can be concluded that the cause for the increase in catalytic activity may be attributed to the basic sites of catalyst surface. The results of both b desorption and gasification reaction showed the restriction on the use of Pt/C-based catalyst.

• 천문학회보
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• 제36권1호
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• pp.27.1-27.1
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• 2011

We obtained the spectra of 93 Planet host stars and 73 normal field stars in F, G, K type using BOES at BOAO. We measured the equivalent width of Fe and 25 elements lines using the automatic EW measurement program, TAME(Tools for Automatic Measurement of Equivalent-widths) and estimated the elemental abundances by synth and abfind driver of MOOG code. Since the absence of planets in the normal field stars cannot be "completely" proved, this work focused on the chemical abundances and planet properties of planet host stars, which have the massive planets close to the parent star relatively. We carried out an investigation for the difference of abundances between stars with "Hot Jupiter" and normal field stars with no known planets. We examined the chemical composition of 25 elements, such as C, N, O, S, Na, Mg, Al, Si, K, Ca, Sc, Ti, V, Cr, Mn, Co, Ni, Cu, Zn, Sr, Y, Zr, Ba, Ce, Nd, and Eu by EW measurements, and the S abundances were estimated using synthetic spectrum. We have found that [Mg/Fe] and [Al/Fe] for planet host stars have lower limit comparing with those of comparison stars, and [Ca/Fe] of host star with Neptunian planets is relatively lower than the other host stars with massive planets. We have performed the Kolmogorov-Smirnov test, and examined the ratio of planet host stars to all stars for each bin of [X/H]. As a result, we noted that the O, Si, and Ca abfor undances are strongly related with the presence of planets.