• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of Adhesion and Interface
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• v.8 no.1
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• pp.15-27
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• 2007

Polyimide (PI) surface modification was carried out by ion-beam treatment and silane-imidazole coupling agent to improve the adhesion between polyimide film and copper. Silane-imidazole coupling agent contains imidazole functional groups for the formation of a complex with copper metal through a coordination bonding and methoxy silane groups for the formation of siloxane polymers. The PI film surface was first treated by argon (Ar)/oxygen ($O_2$) ion-beam, followed by dipping it into a modified silane-imidazole coupling agent solution. The results of X-ray photoelectron spectroscopy (XPS) spectra revealed that the $Ar/O_2$ plasma treatment formed oxygen functional groups such as hydroxyl and carbonyl groups on the polyimide film surface and confirmed that the PI surface was modified by a coupling reaction with imidazole-silane coupling agent. Adhesion between copper and the treated PI film by ion-beam and coupling agent was superior to that with untreated PI film. In addition, adhesion of PI film treated by an $Ar/O_2$ plasma to copper was better than that of PI film treated by a coupling agent. The peeled-off layers from the copper-PI film joint were completely different in chemical composition each other. The layer of PI film side showed similar C1s, N1s, O1s spectra to the original Upilex-S and no Si and Cu atoms appeared. On the other hand the layer of copper side showed different C1s and N1s spectra from the original PI film and many Si and Cu atoms appeared. This indicates that the failure occurs at an interface between the imidazole-silane and PI film layers rather than within the PI layers.

• Korean Chemical Engineering Research
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• v.55 no.1
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• pp.121-129
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• 2017

Pd based catalysts were prepared by impregnating palladium precursor using incipient wetness method on $TiO_2$, $Al_2O_3$, $ZrO_2$, and $SiO_2$ and were applied for the selective oxidation of $H_2$ in the presence of CO. Their physicochemical properties were studied by X-ray diffraction (XRD), $N_2$-sorption, temperature programmed desorption of CO (CO-TPD) and (CO+$H_2O$)-TPD, temperature programmed reduction of CO (CO-TPR) and XPS a. The results of CO- and (CO+$H_2O$)-TPD showed the correlation between peak temperature of TPD and catalytic activities for $H_2$ and CO conversion. The $Pd/ZrO_2$ catalyst exhibited the highest conversion of $H_2$. The addition of $H_2O$ vapor promotes the conversion of $H_2$ and CO by inducing easy desorption of CO and $H_2$ in the competitive adsorption of $H_2O$, CO and $H_2$.

• Korean Journal of Materials Research
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• v.8 no.12
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• pp.1146-1151
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• 1998

The crystallization behaviour of perovskite $PbTiO_3$ for the samples heat- treated at various temperatures for various times in the $PbO-TiO_2-A1_2O_3-SiO_2$, glass system has been investigated by the means of X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses. Higher crystallinity obtained in the sample heat-treated at higher temperature for longer time. With increasing heat-treatment time, dielectric constant of the samples heat-treated at $610^{\circ}C$ and $650^{\circ}C$ increased, but that of the sample heat- treated at $800^{\circ}C$ decreased. Loss tangent of the heat-treated samples was not much influenced by heat-treatment conditions. Piezodielectric charge constant was approximately $1.0\times10^{-12}~8.0$\times$10^{-12}C/N$ in the samples heat-treated at $800^{\circ}C$ for 1h, 2h, and 8h.

• Journal of Korean Society of Environmental Engineers
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• v.32 no.2
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• pp.185-192
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• 2010

The objective of this study was to investigate the effectiveness of stabilization for army firing range soil highly contaminated with Pb (total Pb: 29,000 mg/kg) using calcined waste oyster shells. The calcination was conducted to activate quicklime from calcite. In order to evaluate the effectiveness of calcination, both natural oyster shells (NOS) and calcined oyster shells (COS) were applied to the Pb contaminated soil. Stabilization was conducted by mixing the contaminated soil with oyster shell media at 5-20 wt% and cured for 28 days. Following 28 days of curing, Pb leachability was measured based on the Korean Standard Test method (0.1 N HCl extraction). The treatment results showed that the COS treatment outperformed the NOS treatment. All of the NOS treatments failed to meet the Korean warning standard of 100 mg/kg. However, the Pb concentrations were significantly reduced to 47 mg/kg and 3 mg/kg upon 15 wt% and 20 wt% COS treatments, respectively which passed the Korean warning standard. Moreover, -#20 mesh materials were more effective than the -#10 mesh materials in effectively reducing Pb leachability. The scanning electron microscopy (SEM)-energy dispersive X-ray spectroscopy (EDX) results indicated that Pb immobilization was strongly linked to Al and Si.

• 한국공간정보시스템학회:학술대회논문집
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• 2002.03a
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• pp.83-88
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• 2002

최근 들어 무선인터넷 및 모바일 컴퓨팅 기술의 급속한 발전과 함께 향후 그 수요가 증대될 것으로 예상되는 분야가 위치기반 서비스(LBS: Location Based Service) 기술이다. 위치기반 서비스는 이동 통신을 통하여 사람 및 사물의 위치를 파악하고 이를 활용한 부가 응용 서비스로 국가 정보기술 인프라의 주요 영역을 점유하고 있는 GIS의 차세대 핵심 기술로 발전이 예상되는 분야이다[3][4]. 현재 3GPP나 3GPP2, OGC, LIF와 같은 여러 표준화 기구 및 산업체에서 위치기반 서비스와 이를 위한 시스템에 대한 연구가 진행중이며 위치기반 서비스를 위한 데이터 모델 표준화 연구는 거의 이루어지지 않고 있는 상황이다. 위치기반 서비스를 위한 데이터 표준화 모델은 이미 구축된 공간 데이터베이스의 재사용과 위치기반 서비스들간의 상호 운용성을 지원할 수 있어야 한다. 본 연구에서는 위치기반 서비스들 간의 상호 호환 및 통합을 가능하게 하고, 기존 공간데이터베이스와 연계하여 이 데이터를 위치기반 서비스에 활용하기 위한 공간 데이터 표준화 모델을 제안하고자 한다. 이를 위해 위치기반 서비스 표준화 사례를 조사하고, 위치기반 서비스를 위한 공간 데이터 모델을 제시하였다. 본 연구에서는 OpenLS의 위치기반 서비스를 기본서비스로 하고, OpenGIS의 공간 데이터 모델을 기반으로 네 가지 기본 위치 데이터 타입과 모델의 요구 사항을 포함하는 공간 데이터 표준모델을 개발하였다. 위치기반 공간 데이터 표준 모델은 위치기반 서비스와 데이터들과의 연계를 쉽게 하고, 위치기반 서비스들 간의 상호 운용성을 높이며, 기존 사용자 시스템의 수정 없이 인터페이스만을 추가함으로써 표준을 수용할 수 있다.\pm}153.2,\;116.1{\pm}94,\;29.4{\pm}30.3,\;45.1{\pm}44$로 Mel 10군과 Mel 30군이 유의적인 감소를 보였으나(p<0.05) 이들 두 군 간의 차이는 나타나지 않았다. 이상의 결과로, 랫트에서 복강수술 후 melatonin 10mg/kg투여가 복강 내 유착 방지에 효과적이라고 생각된다.-1}{\cdot}yr^{-1}$로서 두 생태계에 축적되었다.여한 3,5,7군에서 PUFA 함량이 증가한 반면, SFA 함량은 감소하여 P/S 비율, n-3P/n-6P 비율은 증가하는 경향이었으며 이는 간장의 인지질, 콜레스테롤 에스테르, 총 지질의 지방산조성에서도 같은 경향을 볼 수 있었다.X>$(C_{18:2})$와 n-3계 linolenic acid$(C_{18:3})$가 대부분을 차지하였다. 야생 돌복숭아 과육 중의 지방산 조성은 포화지방산이 16.74%, 단불포화지방산 17.51% 및 다불포화지방산이 65.73%의 함유 비율을 보였는데, 이 중 다불포화지방산인 n-6계 linoleic acid$(C_{18:2})$와 n-3계 linolenic acid$(C_{18:3})$가 지질 구성 총 지방산의 대부분을 차지하는 함유 비율을 나타내었다.했다. 하강하는 약 4일간의 기상변화가 자발성 기흉 발생에 영향을 미친다고 추론할 수 있었다. 향후 본 연구에서 추론된 기상변화와 기흉 발생과의 인과관계를 확인하고 좀 더 구체화하기 위한 연구가 필요할 것이다.게 이루어질 수 있을 것으로 기대된다.는 초과수익률이 상승하지만, 이후로는 감소하므로, 반전거래전략을 활용하는 경우 주식투자기간은 24개월

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.38-43
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• 1973

The spin-rotation constants of the proton and tile fluorine nucleus in C $H_4$, Si $H_4$, Ge $H_4$, C $F_4$, Si $F_4$ and Ge $F_4$ were determined experimentally by the molecular beam magnetic resonance method. From the Hamiltonian and the high field approximation, the quantized energy level is given by the following equation. W $m_{I}$ $m_{J}$=- $g_{I}$ $m_{I}$H- $g_{J}$ $m_{J}$H- $C_{av}$ $m_{I}$ $m_{J}$, where $c_{av}$ is one third of the trace of the C tensor. In the nuclear resonance experiment, the proton and the fluorine nuclear resonance curves consist of many unresolved lines given by v=- $g_{J}$H- $C_{av}$ $m_{I}$, and a Gaussian approximation is made to correlate $c_{av}$ to the experimentally obtained half-width of the resonance curve. In the rotational resonance experiment, the five resonance peaks as predicted by v=- $g_{I}$H- $c_{av}$ $m_{I}$, $m_{I}$=0, $\pm$1 and $\pm$2, were all observed. The magnitude of car was determined by measuring the frequency distance between two adjacent peaks. The sign of $c_{av}$ was determined by the side peak suppression technique. The technique is described, and the sign and magnitude of the spin-rotation constant cav are summarized as following: for C $H_4$ -10.3$\pm$0.4tHz(from the rotational resonance), for SiH +3.71$\pm$0.08kHz(from the nuclear resonance), for Ge $H_4$+3.79$\pm$0.13kHz(from the nuclear resonance), for C $F_4$, -6.81$\pm$0.08kHz(from the rotational resonance), for Si $F_4$, -2.46$\pm$0.06kHz(from the rotational resonance), and finally for Ge $F_4$-1.84$\pm$0.04kHz(from the rotational resonance).onal resonance).esonance).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• Korean Journal of Crystallography
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• v.12 no.4
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• pp.197-206
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• 2001

A stoichiometric mixture of evaporating materials for AgInS₂ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films. AgInS₂ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE)system. The source and substrate temperatures were 680℃ and 410℃, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS₂ single crystal thin film mea-sured from Hall effect by van der Pauw method are 9.35×10/sup 16/㎤ and 294㎠/V·s at 293K respectively. The temperature dependence of the energy band gap of the AgInS₂ obtained from the absorption spectra was well described by the Varshni's relation , E/sub g/(T)=2.1365eV-(9.89×10/sup-3/eV/K/)T²(T+2930K). The crystal field and the spin-orbit splitting energies for the valence band of the AgInS₂ have been estimated to be 0.1541eV and 0.0129 eV, respectively, by means of the photocur-rent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ/sub 5/ states of the valence band of the AgInS₂ /GaAs epilayer. The three photo-current peaks ovserved at 10K are ascribed to the A₁-, B-₁and C₁-exction peaks for n=1.

• Journal of the Speleological Society of Korea
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• no.74
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• pp.23-31
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• 2006

(1) Kaeusetgul Cave in Kimnyong-Ri, Jeju-Do, Korea. Kaeuset-gul Cave (KC) is situated in NNE area of the Manjang-gul cave (125m a.s.l.). Kaeuset-gul Cave lies at $126^{\circ}45'22"$ E in longitude and $33^{\circ}33'09"$ N in latitude. The coast belong Kimnyeong-Ri, Kujwa-eup, Jeju-Do. Altitude of the cave-entrance is 10m and length of the cave is 90m. Lava hand-specimens of KC are studied by X-ray fluorescence analysis (XRF). Average major chemical components of specimens from KC is as follows (wt.%); $SiO_2=47.03$, $TiO_2=3.16$, $Al_2O_3=18.41$, FeO*=13.53, MnO=0.14, MgO=5.05, CaO=8.66, $Na_2O=2.81$, $K_2O=0.67$, $P_2O_5=0.55$ in KC. Polarizing microscopic studyindicates that these specimens are described of alkali-basalt. (2) Tachibori Fuketsu (Cave) in Shizuoka Prefecture, Fuji Volcano, Japan Tachibori Fuketsu lies attoward the south in skirt of the Fuji volcano, $138^{\circ}42'04"$ east longitude and $35^{\circ}18'00"$ north latitude. The location of cave entrance is 2745, Awakura, Fujinomiya-shi, Shizuoka Prefecture. The above sea level and length of Tachibori Fuketsu are 1,170m and 82m. Average major chemical components of specimens from cave areas follows (Total 100 wt.%) ; ($SiO_2$=50.52, $TiO_2$=1.69, $Al_2O_3$=15.47, FeO*=13.13, MnO=0.20, MgO=5.97, CaO=9.17, $Na_2O$=2.52, $K_2O$=0.94 and $P_2O_5=0.40).$ Polarizing microscopic study indicates that these specimens may belong to tholeiite-basalt series. According to polarizing microscopic study, Au (Augite), P1 (Plagioclase), and O1 (Olivine) are contained as phenocryst minerals. (3) Gorely Cave in Kamchatka Peninsula, Russia Gorely caldera is located at the southeastern part of Kamchatka Peninsula, about 75km southwest of Petropavlovsk-Kamchatskiy.. Gorely lava caves are situated in NHE area of Mt. Gorely volcano (1829m a.s.1.). One of lava cave (Go-9612=K-1) lies at $158^{\circ}00'22"$ east longitude and $52^{\circ}36'18"$ north latitude. The elevation of cave entrance is about 990m a.s.1. and the main cave extends in the NNW direction for about 50m by 15m wide and 5m in depth. The cave of K-3is near the K-1 cave. "@Lava hand-specimens K-1 and K-3 caves are studied by X-ray fluorescence analysis and polarizing microscopic observation. Average major chemical components of specimens from these caves are as follows (wt.%) ;($SiO_2$=55.12, $TiO_2$=1.25, $Al_2O_3$=16.07, T-FeO* =9.41, MnO=0.16, MgO=5.01, CaO=7.21, $Na_2O$=3.39, $K_2O$=1.92, $P_2O_5$=0.45) and these values indicate that the Gorely basaltic andesite belong to high alumina basalt. Polarizing microscopic study indicates that these specimens are described of Augite andesite.