• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.163-170
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• 1997

The retarding effects of MgSiF6.6H2O on the hydration of portland cement were studied. The setting time, flow value and compressive strength of mortar were measured and the mechanism of retardation was also studied by ion concentration in solution, SEM, BET, and X-ray diffraction. The results are as follows ; 1. Setting time was delayed by the addition of MgSiF6.6H2O. 2. The flow value of mortar decreases depending upon the amount of MgSiF6.6H2O. 3. The compressive strength was almost same or some increase on 28 days hydration. 4. The main retardation mechanism of MgSiF6 on the hydration of portland cement may be explained by the following hypothesis. MgSiF6 depressing the Ca++ and K+ ion concentration of cement paste solution be-cause of the recrystalization of K2SiF6 and CaF2 phase. The new products of K2SiF6 and CaF2 deposit on the surface of unhydrated cement powder and harzard the mass transfer through these layer. The low con-centration of Ca++, K+ ion in solution was decreasing the hydration rate of portland cement.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.192-195
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• 2012

We reported diborane ($B_2H_6$) doped wide bandgap hydrogenated amorphous silicon oxide (p-type a-SiOx:H) films prepared by using silane ($SiH_4$) hydrogen ($H_2$) and nitrous oxide ($N_2O$) in a radio frequency (RF) plasma enhanced chemical vapor deposition (PECVD) system. We improved the $E_{opt}$ and conductivity of p-type a-SiOx:H films with various $N_2O$ and $B_2H_6$ ratios and applied those films in regards to the a-Si thin film solar cells. For the single layer p-type a-SiOx:H films, we achieved an optical band gap energy ($E_{opt}$) of 1.91 and 1.99 eV, electrical conductivity of approximately $10^{-7}$ S/cm and activation energy ($E_a$) of 0.57 to 0.52 eV with various $N_2O$ and $B_2H_6$ ratios. We applied those films for the a-Si thin film solar cell and the current-voltage characteristics are as given as: $V_{oc}$ = 853 and 842 mV, $J_{sc}$ = 13.87 and 15.13 $mA/cm^2$. FF = 0.645 and 0.656 and ${\eta}$ = 7.54 and 8.36% with $B_2H_6$ ratios of 0.5 and 1% respectively.

• Bulletin of the Korean Chemical Society
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• v.24 no.6
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• pp.723-727
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• 2003

Recently the ab initio effective valence shell Hamiltonian method $H^v$ has been extended to treat spin-orbit coupling in atoms or molecules. The quasidegenerate many-body perturbation theory based $H^v$ method has an advantage of determining the spin-orbit coupling energies of all valence states for both the neutral species and its ions with a similar accuracy from a single computation of the effective spin-orbit coupling operator. The new spin-orbit $H^v$ method is applied to calculating the fine structure splittings of the valence states of SiH, $SiH^+$, and $SiH^{2+}$ not only to assess the accuracy of the method but also to investigate the spin-orbit interaction of highly excited states of SiH species. The computed spin-orbit splittings for ground states are in good agreement with experiment and the few available ab initio computations. The ordering of fine structure levels of the bound and quasi-bound spin-orbit coupled valence states of SiH and its ions, for which neither experiment nor theory is available, is predicted.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.69-76
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• 1993

The statistical methodology using RSM (response surface method) was used too ptimize the deposition conditions of selective CVD tungsten process for improving the deposition rate and the adhesion property. Temperature, flow rate of SiH$_4$ and WF$_6$ and H$_2$ and Ar carrier gases were chosen for the deposition variables and process characteristics due to carrier gas were intensively investigated. It was observed that temperature was the main factor influencingthe deposition rate in the case of H$_2$ carrier gas while the reactant ratio, $SiH_{4}/WF_{6}$, had the principal effect on the deposition rate in the case of Ar carrier gas. The increased deposition rate and the good adhesion to Si were obtained under Ar carrier gas compared to H$_2$ carrier gas. The optimum conditions for deposition rate and antipeeling property were found to be the temperature range of 300~32$0^{\circ}C$ and the reactant ratio, $SiH_{4}/WF_{6}$, of 0.5~0.6.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.477-483
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• 1998

$SiC_{4}$$C_{3}$$H_{ 8}$$H_{2}$와 $C_{3}$$H_{8}$ $H_{2}$, $CH_{3}$$SiCI_{3}$$CH_{4}$$H_{2}$계를 사용하여 흑연기판 위에 SiC와 SiC/C FGM을 CVD법에 의해 코팅하였다. $SiCI_{4}$$C_{3}$$H_{8}$ $H_{2}$ 계에서 SiC 증착 시 바람직한 수소의 비는 10-30사이였고 결정 배향성은 입력가스의 탄소비에 따라 여러번의 대 반전이 일어났다. 성장조건을 {111} 배향성을 갖도록 조절하는 것이 FGM층간 접착상태를 증진시킬 수 있는 방법으로 판단되었다. $CH_{3}$$SiCI_{3}$C$_{3}$$H_{8}$ $H_{2}$ 계에서는 SiC와 C의 비율을 조절하기가 $SiCI_{4}$$C_{3}$$H_{8} $H_{2}$계를 사용했을 때 보다 용이하였고, FGM 단면 관찰에서 층간의 뚜렷한 경계를 발견할 수 없을 정도로 우수한 층간 접착상태를 보였다.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.594-597
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• 2002

Silicon Oxynitride(SiON) thick films on p-type silicon(100) wafers have obtained by using plasma-enhanced chemical vapor deposition from SiH$_4$ , N$_2$O and N$_2$. Prism coupler measurements show that the refractive indices of SiON layers range from 1.4620 to 1.5312. A high deposition power of 180 W leads to deposition rates of up to 5.92${\mu}$m/h. The influence of the deposition condition on the chemical composition was investigated using X-ray photoelectron spectroscopy. After deposition of the SiON thick films, the films were annealed at 1050$^{\circ}C$ in a nitrogen atmosphere for 2 h to remove absorption band near 1.5${\mu}$m.

• Journal of the Korean Ceramic Society
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• v.28 no.2
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• pp.130-140
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• 1991

The powders of the system Si3N4-Y2O3-AlN were prepared using Si(OC2H5)4 and YCl3.6H2O together with commercial AlN powder. $\alpha$-Si3N4 was prepared by the carbothermal reduction and nitridation of the hydrolyzed gel at 135$0^{\circ}C$ for 10h in N2 atmosphere. YCl3.6H2O was observed to be changed to Y2O3 during the reaction. $\alpha$-Sialon(X=0.2, 0.4, 0.6) ceramics were obtained by hot-pressing the Si3N4-Y2O3-AlN mixture at 178$0^{\circ}C$ for 1h under 30 MPa. The content of $\alpha$-Sialon increased with increasing metal solubility(x value) and $\alpha$-Sialon single phase was obtained at the metal solubility of 0.6. With increasing metal solubility, flexural strength, fracture toughness and thermal shock resistence were decreased, while the microhardness was increased. Large elongated $\beta$-Si3N4 grains were mainly observed at lower metal solubility. Mechanical prorerties of the sintered ceramics with X=0.2 were measured as follows : flexural strength ; 650 MPa, fracture toughness ; 3.63 MN/m3/2, hardness ; 14.7 GPa, thermal shock resistence temperature ; 58$0^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Bulletin of the Korean Chemical Society
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• v.17 no.6
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• pp.532-535
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• 1996

The bulk photopolymerization of methacrylic acid (MA) with secondary silanes such as PhMeSiH2 and Ph2SiH2 gave poly(MA)s possessing the secondary silyl moiety presumably as an end group. It was found that while the polymerization yields and intrinsic viscosities decreased, the TGA residue yields and the relative intensities of SiH IR stretching bands increased with increasing mole ratio of the secondary silane over MA. The sterically less bulky silane PhMeSiH2 produced poly(MA)s with somewhat higher molecular weights and with similar TGA residue yields compared with the sterically bulkier silane Ph2SiH2. The secondary silanes seem to significantly influence on the photopolymerization of MA as both chain initiation and chain transfer agents.

• Applied Chemistry for Engineering
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• v.27 no.4
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• pp.444-448
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• 2016

Hollow silicon/carbon (H-Si/C) composites as anode materials for lithium ion batteries were investigated to overcome the large volume expansion. H-Si/C composites were prepared as follows; hollow $SiO_2\;(H-SiO_2)$ was prepared by adding $NaBH_4$ to $SiO_2$ synthesized using $st{\ddot{o}}ber$ method followed by magnesiothermic reduction and carbonization of phenolic resin. The H-Si/C composites were analyzed by XRD, SEM, BET and EDX. To improve the capacity and cycle performance, the electrochemical characteristics of H-Si/C composites synthesized with various $NaBH_4$ contents were investigated by charge/discharge, cycle, cyclic voltammetry and impedance tests. The coin cell using H-Si/C composite ($SiO_2:NaBH_4=1:1$ in weight) in the electrolyte of $LiPF_6$ dissolved in organic solvents (EC : DMC : EMC = 1 : 1 : 1 vol%) has better capacity (1459 mAh/g) than those of other composition coin cells. It is found that the coin cell ($SiO_2:NaBH_4=1:1$ in weight) has an excellent capacity retention from 2nd cycle to 40th cycle.