• 한국화재소방학회논문지
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• 제17권2호
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• pp.1-5
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• 2003

현재 고감도의 누전차단기(RCD)와 배선용차단기(WCCB)및 퓨즈(Fuse)설치를 통하여 누전·단락사고와 과전류 발생시 차단기능을 부여함으로써, 전기화재의 발생을 억제하고 있으나, 매우 미흡한 실정이다. 특히 소손사고와 접속·접촉불량사고 및 순간단락사고 발생시는 구조적으로 차단이 불가능할 것으로 사료되며, 이에 대한 연구가 필요하다. 따라서 본 논문에서는 상기의 상황에 기초해서 가장 일반적으로 사용되고 있는 열동형 누전차단기(단락보호, 과부하 겸용)의 동작원리와 시험항목 및 기준분석을 통하여 문제점을 제시하고자 한다. 또한 저압 배선선로의 소손사고와 접속·접촉불량사고 및 순간단락사고 발생시 전등(R)부하 및 전동기(R-L)부하에 따른 누전차단기의 동작특성을 실제 실험을 통하여 검토하고자 한다.

• 대한전기학회논문지
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• 제39권1호
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• pp.10-15
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• 1990

본 논문에서는 전력계통에 발생할 수 있는 3상단락 고장전류 계산에 있어서 등가 임피던스를 효율적으로 계산하는 알고리즘을 제시하고, 확률적으로 고장전류 분포를 해석하여 차단기 용량을 선정하는 방법을 제시한다. 즉, 고장점에 따른 모선 어드미턴스 변화분을 계산 하므로서 고장등가 임피던스를 계산하고 특정선로의 고장점을 변화시키며 3상단락 고장전류의 확률적 분포를 해석하여 적정용량의 차단기를 선정하는 방법을 제시하였다. 제시한 알고리즘으로 IEEE-6 모선 계통과 IEEE-30모선계통에 적용하여 효용성을 입증하였고 확륙적 고장전류 해석 방법은 적정 차단기 용량을 선정함으로써 설비 투자비면에서 경제적임을 입증하였다.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.37-41
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• 2017

In this paper, the fault current limiting characteristics of the flux-lock type SFCL (superconducting fault current limiter) using magnetic application circuit were analyzed. The flux-lock type SFCL has the structure to install the magnetic application circuit, which can increase the resistance of HTSC ($high-T_C$ superconducting element comprising) the SFCL. To analyze the fault current limiting effect of the flux-lock type SFCL through the magnetic flux application circuit, the flux-lock type SFCL either with the magnetic flux circuit or without the magnetic flux circuit was constructed and the fault current limiting characteristics of the SFCL were compared each other through the short-circuit tests.

• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.51-56
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• 2005

For a fire cause judgement this paper describes the short circuit characteristics of a electric wire through the cross section analysis under ac condition. The cower wires prepared for the experiment were 1.2mm, 1.6mm, and 2.0mm in diameter. Through the cross section analysis(CSA), it was confirmed that the dendrite structure grew at the angle of about $40^{\circ}\;or\;60^{\circ}$ when the fusing current was applied to the wires. The larger the fusing current is, the more decreased the growth angle of the dendrite structure is. It was confirmed that the dendrite structure was arranged like the columnar structure. In this paper, the characteristics analysis of short circuit was carried out in the range of transient duration and the correlation constant k was investigated by measuring the short circuit duration and the fusing current.

• 전기의세계
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• 제13권3호
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• pp.13-20
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• 1964

The measurements of X-ray and Gamma-ray Dose Rate have been successfully made by measuring the short circuit current of the Silicon P-N Junction Diode being irradiated. The short circuit current flows when a silicon P-N Junction Diode is irradiated by X-ray of Gammaray radiations due to photovoltaic effect. A brief analysis is given in order to verify the proportionality of a short circuit current to the Dose Rate. Using this method, measurements of X-ray Dose Rate were carried out in the range of 0.05-1600 r/m successfully. The calibration was made by comparing with Victoreen condenser r-meter. Some advantages in this Dose Rate meter over a condenser r-meter were found. One can measure a continous variation of X-ray Dose Rate with this rate meter at the control console of X-ray device.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.358-363
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• 2004

A new 600 V dual gate transistor employing thyristor action, which incorporates floating PN junction and trench gate IGBT, is proposed to improve the forward current-voltage characteristics and the short circuit ruggedness. Our two-dimensional numerical simulation shows that the proposed device exhibits low forward voltage drop and eliminates the snapback phenomena compared with conventional trench gate IGBT and EST The proposed device achieves high current saturation characteristics by separating floating N+ emitter and cathode. The proposed device achieves low saturation current value compared with conventional devices, and the short-circuit ruggedness is improved. The proposed device may be suitable for the use of high voltage switching applications.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 ITC-CSCC -2
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• pp.1005-1008
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• 2000

This paper presents a simple method to estimate short-circuit power dissipation and propagation delay for static CMOS logic circuits. Short-circuit current expression is derived by accurately interpolating peak points of actual current curves which is influenced by the gate-to-drain coupling capacitance. The macro model and its expressions estimating the delay of CMOS circuits, which is based on the current modeling expression, are also proposed after investigating the voltage waveforms at transistor output modes. It is shown through simulations that the proposed technique yields better accuracy than previous methods when signal transition time and/or load capacitance decreases, which is a characteristic of the present technological evolution.

• 전자공학회논문지 IE
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• 제49권2호
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• pp.52-57
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• 2012

사회발전과 더불어 가전기기의 발전은 누전으로 인한 감전, 화재 등 여러 가지 누전전류의 위험성에 노출되어 있다. 가정 내 배전함에 누전차단기가 설치되어 있지만, 기존의 누전차단기는 배전함에 설치되어 누전시 전원을 차단해주는 기능만을 갖는다. 또한 집안 벽마다 설치된 콘센트에 연결된 가전기기들을 개별적으로 점검하는 일은 쉬운 일이 아니다. 따라서 본 논문에서는 누전차단기회로의 성능 및 회로를 분석하고, ZigBee기반의 센서를 이용하여 가정 내 가전기기들의 누전상태를 모니터링 할 수 있는 방법에 대해 제시하였다. 성능분석 결과, 제안된 ELB 누전전류 제어시스템은 가전기기에 내장된 누전차단기 회로를 응용했기 때문에 각각의 가전기기들의 누전상태를 확인할 수 있어 기존 시스템 보다 누전을 쉽고 편리하게 모니터링 할 수 있을 것이라 기대한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 B
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• pp.705-706
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• 2006

Generally Short Circuit Test of transformers are tested according to IEEE std C57.12.00-2000, IEC 60076-5(2000-07), ES148(1998.6.26) or KS C4309(2003). But ES148(1998.6.26) is same as IEEE std C57. 12.00-2000 and KS C4309(2003) is revising coincidence with IEC 60076-5(2000-07). On this study condition of the transformers before short circuit test, calculation method for test current peak value, tolerance on the asymmetrical peak and r.m.s value, short circuit testing procedure, number of short circuit test, duration short circuit test, and detection of faults and evaluation of short circuit test result will be compared with ANSI and IEC.

• Current Optics and Photonics
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• 제5권2호
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.