• 한국광학회지
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• 제4권4호
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• pp.447-451
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• 1993

용량이행형 방전회로를 이용하여 장펄스 XeCl 엑시머 레이저를 발진 시켰으며, 펄스폭은 150ns(FWHM)이었다. 펄스폭에 영향을 미치는 가스분압 및 capacitance의 비에 따른 펄스폭의 변화를 관측 하였으며, 이로부터 단펄스에서 장펄스로의 발진을 쉽게 얻을 수 있음을 알았다. 일정 가tm 혼합 비율([Xe]/[HCl]=15)의 상태에서 HCl과 Xe가스의 분압이 감소함에 따라 광 펄스폭의 최대 변화량은 125ns이었고, 일정 압력 하에서의 capacitance비(Cm/Cp) 변화에 늘어나는 광 펄스폭의 변화량은 60ns이었다.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• 한국재료학회지
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• 제30권10호
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• pp.566-572
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• 2020

In the recent years, thin film solar cells (TFSCs) have emerged as a viable replacement for crystalline silicon solar cells and offer a variety of choices, particularly in terms of synthesis processes and substrates (rigid or flexible, metal or insulator). Among the thin-film absorber materials, SnS has great potential for the manufacturing of low-cost TFSCs due to its suitable optical and electrical properties, non-toxic nature, and earth abundancy. However, the efficiency of SnS-based solar cells is found to be in the range of 1 ~ 4 % and remains far below those of CdTe-, CIGS-, and CZTSSe-based TFSCs. Aside from the improvement in the physical properties of absorber layer, enormous efforts have been focused on the development of suitable buffer layer for SnS-based solar cells. Herein, we investigate the device performance of SnS-based TFSCs by introducing double buffer layers, in which CdS is applied as first buffer layer and ZnMgO films is employed as second buffer layer. The effect of the composition ratio (Mg/(Mg+Zn)) of RF sputtered ZnMgO films on the device performance is studied. The structural and optical properties of ZnMgO films with various Mg/(Mg+Zn) ratios are also analyzed systemically. The fabricated SnS-based TFSCs with device structure of SLG/Mo/SnS/CdS/ZnMgO/AZO/Al exhibit a highest cell efficiency of 1.84 % along with open-circuit voltage of 0.302 V, short-circuit current density of 13.55 mA cm^-2, and fill factor of 0.45 with an optimum Mg/(Mg + Zn) ratio of 0.02.

• 한국태양에너지학회 논문집
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• 제32권spc3호
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• pp.245-254
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• 2012

In photovoltaic system, the characteristics of photovoltaic module such as open circuit voltage and short circuit current will be changed because of cell temperature and solar radiation. Therefore, the boost converter of a PV system connects between the output of photovoltaic system and DC link capacitor of grid connected inverter as controlling duty ratio for maximum power point tracking(MPPT). This paper shows the dynamic characteristics of the boost converter by comparing single-loop and two-loop control algorithm using both analog and digital control. Both proposed compensation methods have been verified with computer simulation to demonstrate the validity of the proposed control schemes.

• 한국재료학회지
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• 제20권9호
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• pp.483-487
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• 2010

To fabricate $TiO_2$ nanoparticle-based dye sensitized solar cells (DSSCs) at a low-temperature, DSSCs were fabricated using hydropolymer and ZnO nanoparticles composites for the electron transport layer around a low-temperature ($200^{\circ}C$). ZnO nanoparticle with 20 nm and 60 nm diameter were used and Pt was deposited as a counter electrode on ITO/glass using an RF magnetron sputtering. We investigate the effect of ZnO nanoparticle concentration in hydropolymer and ZnO nanoparticle solution on the photoconversion performance of the low temperature fabricated ($200^{\circ}C$) DSSCs. Using cis-bis(isothiocyanato)bis(2,20 bipyridy1-4,40 dicarboxylato) ruthenium (II) bis-tetrabutylammonium (N719) dye as a sensitizer, the corresponding device performance and photo-physical characteristics are investigated through conventional physical characterization techniques. The effect of thickness of the ZnO photoelectrode and the morphology of the ZnO nanoparticles with the variations of hydropolymer to ZnO ratio on the photoconversion performance are also investigated. The morphology of the ZnO layer after sintering was examined using a field emission scanning electron microscope (FE-SEM). 60 nm ZnO nanoparticle DSSCs showed an incident photon-to-current conversion efficiency (IPCE) value of about 7% higher than that of 20 nm ZnO nanoparticle DSSCs. The maximum parameters of the short circuit current density ($J_{sc}$), the open circuit potential ($V_{oc}$), fill factor (ff), and efficiency ($\eta$) in the 60 nm ZnO nanoparticle-based DSSC devices were 4.93 mA/$cm^2$, 0.56V, 0.40, and 1.12%, respectively.

• 멤브레인
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• 제21권3호
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• pp.213-221
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• 2011

염료감응형 태양전지를 위한 겔 고분자 전해질막을 제조하였다. 고분자물질로는 Poly(ethylene oxide) (PEO)를 사용하였으며, 가소제로서 poly(ethylene glycol) (PEG)을 첨가하였고, 전해질염 및 $I^-/I_3^-$의 공급원으로서 KI 및 $I_2$를 첨가하여 고분자 전해질막을 제조하였으며, 이와 같은 고분자 전해질막을 바탕으로 염료감응형 태양전지를 제조하였다. 고분자 전해질 내의 가소제로서의 PEG는 95%의 함량으로 주입되었으며, 전해질 내의 EO 1 mole 당 KI mole 수([KI]/[EO] 비)가 0.022, 0.044, 0.066 및 0.088이 되도록 KI가 주입되었다. 이러한 방식으로 제조된 겔 전해질막은 상온에서 왁스(wax) 형태를 보였다. 낮은 KI 함량의 영역에서는 KI 함량이 증가하면서 전해질막을 통한 이온전도도가 증가하였으며, [KI]/[EO]비가 0.066인 때에 이온전도도는 최대값을 보인 후 0.088로 증가하면서 이온전도도는 감소하였다. 염료감응형 태양전지에 있어서는 고분자 전해질막 내의 KI 함량이 증가하면서 $V_{OC}$는 지속적으로 감소하였다. 반면, $J_{SC}$의 경우 낮은 KI 함량의 범위에서는 KI 함량이 증가하면서 $J_{SC}$는 증가하였으며 [KI]/[EO]비가 0.044인 때에 $J_{SC}$가 최대값을 보인 후 그 이상의 높은 범위에서는 KI함량의 증가에 따라 $J_{SC}$는 감소하였다.

• 한국산학기술학회논문지
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• 제15권7호
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• pp.4494-4499
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• 2014

약한 계통은 단락비가 작고 임피던스가 크므로 과도 안정도 여유도가 매우 낮다. 약한 계통에 사고가 발생하면 보호 시스템은 사고 선로를 개방함으로써 사고를 제거하는데 이것은 시스템의 안정도를 더욱 약하게 만든다. 그러므로 약한 계통의 안정도 여유를 증가시키기 위한 하나의 방법은 시스템에 추가적인 발전기를 연결하는 것이다. 본 논문에서는 약한 계통의 안정도 여유도를 증가시키기 위하여 기존의 동기발전기를 추가하는 경우와 풍력발전기의 를 추가하는 경우의 안정도 여유도를 비교한다. PSSE를 이용한 과도안정도 시뮬레이션 결과 풍력발전기가 충분한 제동력을 제공하고 안정도 여유를 증가시킴을 확인할 수 있었다. 풍력발전기를 추가할 때 안정도 여유도는 CCT 기준으로 5배까지 향상되었다.

• Journal of electromagnetic engineering and science
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• 제14권1호
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• pp.1-8
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• 2014

A differential-cascode CMOS power amplifier (PA) with a supply modulator for envelope tracking (ET) has been implemented by 0.18 ${\mu}m$ RF CMOS technology. The loss at the output is minimized by implementing the output transformer on a FR-4 printed circuit board (PCB). The CMOS PA utilizes the $2^{nd}$ harmonic short at the input to enhance the linearity. The measurement was done by the 10MHz bandwidth 16QAM 6.88 dB peak-to-average power ratio long-term evolution (LTE) signal at 1.85 GHz. The ET operation of the CMOS PA with the supply modulator enhances the power-added efficiency (PAE) by 2.5, to 10% over the stand-alone CMOS PA for the LTE signal. The ET PA achieves a PAE of 36.5% and an $ACLR_{E-UTRA}$ of -32.7 dBc at an average output power of 27 dBm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.109-109
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• 2006

Screen printing (SP) metal contact is typically applied to the solar cells for mass production. However, SP metal contact has low aspect ratio, low accuracy, hard control of the substrate penetration and unclean process. On the other hand, photo lithograpy (PL) metal contact can reduce defects by metal contact. In this investigation, PL metal contact was obtained the multi-layer structure of Ti/Pd/Ag by e-beam process. We applied SP metal contact and PL metal contact to single crystalline silicon solar cells, and demonstrated the difference of conversion efficiency. Because PL metal contact silicon solar cell has Jsc (short circuit current density) better than silicon solar cell applied SP metal contact.

• 제어로봇시스템학회논문지
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• 제15권12호
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• pp.1163-1168
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• 2009

The power quality of wind energy becomes more and more important in connecting wind-farms to the grid, especially weak grid. This paper presents the simulation of a wind farm of a permanent magnet synchronous generator (PMSG) and a doubly fed induction generator (DFIG). Flicker mitigation is performed by using PMSG as a static synchronous compensator (STATCOM) to regulate the voltage at the point of common coupling (PCC). A benefit of the measure is that integrating two function of to control the active power flow and to reduce the voltage flicker in a wind farm. Simulation results show that controlling PMSG is an effective and economic measure in reducing the flicker during continuous operation of grid connected wind turbines regardless of short circuit capacity ratio, turbulence intensity and grid impedance angle.