• 전기학회논문지
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• 제59권12호
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• pp.2212-2217
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• 2010

Previous studies have been focused on the voltage of Bypass diode and Isc(Short Circuit Current) of the influenced solar cell. The Bypass diode starts working when it gets the reverse applied voltage. Previous studies have only concentrated on Isc of the influenced solar cell and Imp of PV module to explain the bypassing performance. PV module is usually working together with inverter having MPPT(Maximum Power Point Tracking) function for best performance. bypassing point is regulated by MPPT function of inverter. In this paper, simulation results of Bypass diode in PV module have been analyzed to represent the relationship of the bypassing point with the composition of PV module. From the results, the more cells are connected with each string, the earlier bypassing performance happens under the fixed number of strings. As diode groups increase or irradiation decreases, the bypassing performance starts fast.

• Tuberculosis and Respiratory Diseases
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• 제40권3호
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• pp.236-249
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• 1993

연구배경 : 정상 폐상피세포에서는 항상 생성되고 있는 활성산소(oxygen radical)에 의한 유해작용에 노출되어 있고, 이들 유해 산소들은 폐기종과 같은 폐질환의 원인 기전으로 생각되고 있다. 본 연구에서는 이 방법을 이용하여 만든 폐상피세포 단일막에서 전기생리학적인 관점에서 물질의 이동지표인 short-circuit current(Isc)와 조직저항(R)에 대한 활성산소의 하나인 $H_2O_2$(hydrogen peroxide)가 어떤 영향을 미치는지를 연구함으로서 세포생리학적 기전을 구명하고자 한다. 방법 : Tissue culture-treated polycarbonant membrane filter 에서 배양시킨 쥐 제 2 형 폐상피세포 배양 단일막에서 $H_2O_2$의 능동적 이온 이동 (Isc) 과 수동적 용질이동에 대한 조직저항(R)에 미치는 효과를 관찰하였다. 배양 제 3 일과 제 4 일째 단일막을 수정된 Ussing chamber에 설치하고 막 양측에 HEPES-buffered Ringer 용액으로 incubation 하였다. 외부에서 0~100 mM 농도의 $H_2O_2$를 apical 또는 basolateral side에 작용시켜 Isc와 R의 변화를 관찰하였다. 폐상피세포 장벽이 외부의 $H_2O_2$에 대하여 방어작용을 가지는 세포내 catalase 활성도를 측정하고, catalase 억제제인 aminotriazol(ATAZ) 20 mM의 효과도 함께 관찰하였다. 결과 : 이 단일막은 형태학적으로 보아서 in vivo 에서의 포유류 제 1 형 폐상피세포 장벽의 특성을 나타내고 세포들 사이는 tight junction을 이루며(조직저항 R: 2,000 ohm-$cm^2$ 이상) sodium ion의 능동적 이동 (Isc: 5 ${\mu}A/cm^2$)을 보였다. $H_2O_2$는 dose-dependent 양식으로 Isc와 R 모두 감소시켰다. Apical side에 작용하는 $H_2O_2$에 있어서는 60분에 50% 억제하는 농도인 $ED_{50}$는 Isc와 R은 약 4mM 이었으나 basolateral side의 경우는 약 0.04mM 로서 그 작용 강도는 apical에 비하여 약 100배 정도 더 컸다. ATAZ 존재시 apical side의 $ED_{50}$는 0.4mM로 감소하였으나 basolateral side의 경우 변화가 없었다. $H_2O_2$의 제거율은 apical 또는 basolateral side 어느 쪽에 존재하든 같았으며, 세포내 catalase 활성도는세포배양기간이 길어짐에 따라 증가함을 보였다. 결론 : 이상의 실험결과는 basolateral side에 작용하는 $H_2O_2$는 세포내 막구성성분 중 basolateral 측에 존재하는 곳에(예, $Na^+,\;K^+$-APTase) 직접 장애를 미칠 것으로 생각된다. 한편 apical side에 작용하는 $H_2O_2$는 막성분에 도달하기 전에 세포내에 존재하는 catalase에 의하여 대부분 그 작용을 잃게 된다. 결론적으로 Isc와 R로 측정된 폐상피세포 장벽의 특성은 $H_2O_2$에 의하여 손상을 받고 apical side 보다는 basolateral side 측정이 더 손상을 잘 받게 된다.

• 태양에너지
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• 제12권2호
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• pp.62-78
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• 1992

본 논문은 二(이)가열원 진공증착법을 이용하여 실리콘 웨이퍼의 온도를 190[$^{\circ}C$]로 유지한 상태에서 ITO 박막을 증착, 열처리한 후 $ITO_{(n)}/Si_{(p)}$ 태양전지를 제작하였고 그의 전기적 특성을 조사하였다. $In_2O_3$와 $S_nO_2$의 증착비율이 각각 91[mole %] 9[mole %]일 때 최대효율 11[%]의 태양전지를 제작 할 수 있었다. 제작된 전지는 열처리 시간과 온도에 따라 성능이 향상되지만 약 600[$^{\circ}C$] 이상의 온도, 15분 이상의 열처리 시간에서는 오히려 박막의 각종 결함의 증가로 인한 감소현상을 보였다. 제작한 전지의 광 응답 특성을 조사하였는데 열처리온도를 증가시킴에 따라 미소하나마 장파장 영역으로 그 peak값이 이동함을 알 수 있었다. X선 회절현상을 통해 열처리온도에 따른 결정성장이 증대하여 단결정 쪽으로 이동해 감을 확인할 수 있었다. 본 실험에서 제작한 $ITO_{(n)}/Si_{(p)}$ 태양전지에 대하여 특성을 조사한 바 다음과 같은 결과를 얻었다. $100[mW/cm^2]$의 태양광 에너지 조사하에서 단락전류 : ISC=31 $[mW/cm^2]$ 개방전압 : VOC=460[mV] 충실도 : FF=0.71 변환효율 : ${\eta}$=11[%].

• 한국재료학회지
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• 제30권10호
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• pp.509-514
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• 2020

The two key variables of an Si solar cell, i.e., emitter (n-type window layer) and base (p-type substrate) doping levels or concentrations, are studied using Medici, a 2-dimensional semiconductor device simulation tool. The substrate is p-type and 150 ㎛ thick, the pn junction is 2 ㎛ from the front surface, and the cell is lit on the front surface. The doping concentration ranges from 1 × 10¹⁰ cm^-3 to 1 × 10²⁰ cm^-3 for both emitter and base, resulting in a matrix of 11 by 11 or a total of 121 data points. With respect to increasing donor concentration (Nd) in the emitter, the open-circuit voltage (Voc) is little affected throughout, and the short-circuit current (Isc) is affected only at a very high levels of Nd, exceeding 1 × 10¹⁹ cm^-3, dropping abruptly by about 12%, i.e., from Isc = 6.05 × 10^-9 A·㎛^-1, at Nd = 1 × 10¹⁹ cm^-3 to Isc = 5.35 × 10^-9 A·㎛^-1 at Nd = 1 × 10²⁰ cm^-3, likely due to minority-carrier, or hole, recombination at the very high doping level. With respect to increasing acceptor concentration (Na) in the base, Isc is little affected throughout, but Voc increases steadily, i.e, from Voc = 0.29 V at Na = 1 × 10¹² cm^-3 to 0.69 V at Na = 1 × 10¹⁸ cm^-3. On average, with an order increase in Na, Voc increases by about 0.07 V, likely due to narrowing of the depletion layer and lowering of the carrier recombination at the pn junction. At the maximum output power (Pmax), a peak value of 3.25 × 10^-2 W·cm^-2 or 32.5 mW·cm^-2 is observed at the doping combination of Nd = 1 × 10¹⁹ cm^-3, a level at which Si is degenerate (being metal-like), and Na = 1 × 10¹⁷ cm^-3, and minimum values of near zero are observed at very low levels of Nd ≤ 1 × 10¹³ cm^-3. This wide variation in Pmax, even within a given kind of solar cell, indicates that selecting an optimal combination of donor and acceptor doping concentrations is likely most important in solar cell engineering.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.88.2-88.2
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• 2010

Dye-sensitized solar cells (DSSCs) have attracted considerable attention on account of their high solar energy-to-conversion efficiencies and low cost processes compared to conventional p-n junction solar cells. The mechanism of DSSC is based on the injection of electrons from the photo excited dyes into the conduction band of the semiconductor electrode. The oxidized dye is reduced by the hole injection into either the hole conductor or the electrolyte. Thus, the light harvesting effect of dye plays an important role in capturing the photons and generating the electron/hole pair, as well as transferring them to the interface of the semiconductor and the electrolyte, respectively. We used the organic fluorescence materials which can absorb short wavelength light and emit longer wavelength region where dye sensitize effectively. In this work, the DSSCs were fabricated with fluorescence materials added $TiO_2$ photo-electrode which were sensitized with metal-free organic dyes. The photovoltaic performances of fluorescence aided DSSCs were compared, and the recombination dark current curves and the incident photon-to-current (IPCE) efficiencies were measured in order to characterize the effects of the additional light harvesting effect in DSSC. Electro-optical measurements were also used to optimize the fluorescence material contents on TiO2 photo-electrode surface for higher conversion efficiency (${\eta}$), fill factor (FF), open-circuit voltage (VOC) and short-circuit current (ISC). The enhanced light harvesting effect by the judicious choice/design of the fluorescence materials and sensitizing dyes permits the enhancement of photovoltaic performance of DSSC.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.460-460
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• 2014

Organic photovoltaic cells (OPV) have been extensively studied due to their unique properties such as flexibility, light-weight, easy processability, cost-effectiveness, and being environmental friendly. These advantages make them an attractive candidate for application in various novel fields and promising development with new features. Photovoltaic cell-integrated textiles have greatly attractive features as a power source for the smart textile solutions, and OPV is most ideal form factor due to advantage of flexibility. In this study, we develop a textile-based OPV through various experimental methods and we suggest the direction for the design of the photovoltaic textile. We used a textile electrode and tried to various layouts for textile-based OPV. Finally, we determined the contact area by using Hertzian theory for the calculation of power conversion efficiency (PCE). Based on the results of calculation, the short circuit current density, Isc, was $13.11mA/cm^2$ under AM 1.5condition and the PCE was around 2.5%.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.178-181
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• 2008

A solar cell based on dye-sensitized photoelectric conversion was studied by investigating the effects of the amount of polyethylene glycol(PEG), added to the $TiO_2$ paste, on surface morphology of the $TiO_2$ films and on the solar cell performance. Energy conversion efficiency was found to increase with PEG addition up to 20 % by weight of $TiO_2$ and then decrease with further addition due to the aggregation of $TiO_2$ nano particles in the $TiO_2$ film. In this study, the best result of dye-sensitized solar cell was the short circuit current(Isc) of $22.6mAcm^{-2}$, the open circuit voltage (Voc) of 0.73 V, the fill factor (ff) of 0.55 and the overall energy conversion efficiency (${\eta}$) of 9.1 % under illumination with AM 1.5 simulated sunlight.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1990년도 추계학술대회 논문집
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• pp.88-90
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• 1990

In this study, PN junction solar cell and P$\^$+/-N-N$\^$+/ BSF solar cell, using N-type(111), 10$\^$16/[atoms/cm$\^$-3/] wafer, were fabricated applying that ion implant method whose dose are 1E14, 1E15, 3E15 and its acceleration energy is 50Key, 100Key respectively. The impurity concentration of two types of front-side are 10$\^$18/[atoms/cm$\^$-3/] and back-side concentration for BSF solar cell is 10$\^$17/[atoms/cm$\^$-3/]. As a result of comparison for 2 typical types of cells out of various fabricated samples, open circuit voltage (Voc), short circuit current(Isc) of BSF solar cell are larger than those of PN solar cell by 48[%], 14[%]. Considering that the efficiency of BSF cell is 2.5[%] as well as PN solar cell's is 7.5[%], 10.0[%] of efficiency improvement effect can be obtained from BSF solar cell. Futhermore, in consequence of front-side impurity concentration change from 10$\^$17/[atoms/cm$\^$-3] to 10$\^$20/[atoms/cm$\^$-3/] alternately, the most ideal result can be expected when it is 10$\^$18/[atoms/cm$\^$-3/].

• 반도체디스플레이기술학회지
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• 제13권3호
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• pp.21-25
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• 2014

The texturing is one of the most important processes for high efficiency crystalline silicon solar cells. The rear side flatness of silicon solar cell is very important for increasing the light reflectance and forming uniform back surface field(BSF) region in manufacturing high efficiency crystalline silicon solar cells. We investigated texturing difference between front and rear side of wafer by texturing of two adhered wafers. As a result, the flatter rear side was obtained by forming less pyramid size compared to the front side and improved reflectance of long wavelength and back surface field(BSF) region were also achieved. Therefore, the texturing of two adhered wafers can be expected to improve the efficiency of silicon solar cells due to increased short circuit current(Isc).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.335-335
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• 2007

염료감응형 태양전지(Dye-sensitized solar cells)용 페이스트의 제조시 바인더(binder)인 폴리에틸렌 글리콜(Polyethylene glycol; 이하 PEG)의 함량변화가 염료감응형 태양전지의 에너지 변환효율에 미치는 영향을 조사하고자 하였다. PEG의 함량변화는 0-30wt%까지 변화시켰으며 그들의 표면이나 단면의 형상을 FE-SEM, AFM으로 관찰 하였고, PEG 함량변화에 따른 열적특성은 TG/DTA 결과로 조사하였다. PEG의 양이 0%에서 20wt%까지 첨가되었을 때 단락전류밀도(Isc: Short current density)는 증가되어 나타났고 PEG가 30wt%가 첨가되었을 때는 오히려 감소하는 것을 확인할 수 있으며 이것은 $TiO_2$ 입자간의 응집현상이 과도하게 진행되어 전자의 흐름을 방해한 것으로 판단된다. PEG의 함량이 20wt% 첨가되었을 때 개방전압 (Voc: Open circuit voltage)이 0.73V, 단락전류밀도는 $22.6mA/cm^2$, 필펙터는 0.55, 에너지변환효율은 9.1%로 최적의 바인더 함량을 나타내었다. 염료감응형 태양전지의 광전극 제조시 PEG 바인더의 함량 변화에 따라 일자간의 응징특성이나 기공도와 같은 표면형상, 그리고 에너지변환효율을 변화시킨다는 것을 확인할 수 있었다.