• 한국재료학회지
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• 제26권11호
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• pp.656-661
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• 2016

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.

• 한국해양공학회지
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• 제15권3호
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• pp.58-62
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• 2001

The objective of research is to clarify the interaction between dislocations and precipitates during high temperature creep deformation behaviors of high n austenitic steels. After measuring the internal stress in minimum creep rate state under applied stress of 236MPa at 873K, a transmission electron microscope (TEM) observation was performed to investigate the interaction between dislocations and precipitates during high temperature creep deformation. The band widths and values of internal stress increased when the nitride precipitates distribute more densely. Fine nitrides disturbed the dislocation movement with pinning the dislocations and perfect dislocations were separated into Shockley partial dislocations by fine nitrides. Coarse nitrides disturbed the dislocation movement with climb mechanism.

• 한국해양공학회:학술대회논문집
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• 한국해양공학회 2001년도 춘계학술대회 논문집
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• pp.332-337
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• 2001

The objective of research is to clarify the interaction between dislocations and precipitates during high temperature creep deformation behaviors of high Mn austenitic steels. After measuring the internal stress in minimum creep rate at 873K, a transmission electron microscope (TEM) observation was performed to investigate the interaction between dislocations and precipitates during high temperature creep deformation. The band width of effective stress and internal stress increased when the nitride precipitates distribute more densely. Fine nitrides disturbed the dislocation movement with pinning the dislocations and perfect dislocations were separated into Shockley partial dislocations by fine nitrides. Coarse nitrides disturbed the dislocation movement with climb mechanism.

• 열처리공학회지
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• 제21권5호
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• pp.251-258
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• 2008

A transmission electron microscope investigation has been performed on the morphology of dislocations in deformed ${\gamma}^{\prime}-Ni_3(Al,Ti)$ alloys containing fine dispersion of disordered ${\gamma}$ particles. Superlattice dislocations dissociate into fourfold Shockley partial dislocations in a uniform supersaturated solid solution of the ${\gamma}^{\prime}$ phase. Dislocations are attracted into the disordered ${\gamma}$ phase and dissociate further in the particles. At any stage of aging, dislocations cut through the particles and the Orowan bypassing process does not occur even in the over-aged stage of this alloy system. The work necessary to pull the dislocation away from the disordered particles into the ordered matrix should mainly contribute to increase the strength of the ${\gamma}^{\prime}$ phase containing fine dispersion of the disordered ${\gamma}$ phase.

• 전자공학회논문지A
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• 제31A권7호
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• pp.85-94
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• 1994

A high-resolution transmission electron microscopy study of the solid phase crystallization of the amorphous silicon thin films, deposited on SiOS12T at 52$0^{\circ}C$ by low pressure chemical vapor deposition and annealed at 55$0^{\circ}C$ in a dry N$_{2}$ ambient was carried out so that the arrangement of atoms in the crystalline silicon and at the amorphous/crystalline interface of the growing grains could be understood on an atomic level. Results show that circular crystalline silicon nuclei have formed and then the grains grow to an elliptical or dendritic shape. In the interior of all the grains many twins whose{111} coherent boundaries are parallel to the long axes of the grains are observed. From this result, it is concluded that the twins enhance the preferential grain growth in the <112> direction along {111} twin planes. In addition to the twins. many defect such as intrinsic stacking faults, extrinsic stacking faults, and Shockley partial dislocations, which can be formed by the errors in the stacking sequence or by the dissociation of the perfect dislocation are found in the silicon grain. But neither frank partial dislocations which can be formed by the condensation of excess silicon atoms or vacancies and can form stacking fault nor perfect dislocations which can be formed by the plastic deformation are observed. So it is concluded that most defects in the silicon grain are formed by the errors in the stacking sequence during the crystallization process of the amorphous silicon thin films.