• Structural Engineering and Mechanics
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• v.76 no.6
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• pp.687-708
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• 2020

Openings in steel plate shear walls (SPSWs) are usually used for decorative designs, crossing locations of multiple utilities and/or structural objectives. However, earlier studies showed that generating an opening in an SPSW has a negative effect on the cyclic performance of the SPSW. Therefore, this study proposes tripling or doubling the steel-sheet-plate (SSP) layer and stiffening the opening of the SPSW to provide a solution to undesirable opening effects, improve the SPSW performance and provide the infill option of potential strengthening measures after the construction stage. The study aims to investigate the impact of SSP doubling with a stiffened opening on the cyclic behaviour, expand the essential data required by structural designers and quantify the SPSW performance factors. Validated numerical models were adopted to identify the influence of the chosen parameters on the cyclic capacity, energy dissipation, ductility, seismic performance factors (SPF) and stiffness of the suggested method. A finite Element (FE) analysis was performed via Abaqus/CAE software on half-scale single-story models of SPSWs exposed to cyclic loading. The key parameters included the number of SSP layers, the opening size ratios corresponding to the net width of the SSP, and the opening shape. The findings showed that the proposed assembly method found a negligible influence in the shear capacity with opening sizes of 10, 15, 20%. However, a deterioration in the wall strength was observed for openings with sizes of 25% and 30%. The circular opening is preferable compared with the square opening. Moreover, for all the models, the average value of the obtained ductility did not show substantial changes and the ultimate shear resistance was achieved after reaching a drift ratio of 4.36%. Additionally, the equivalent sectional area of the SSP in the twin and triple configuration of the SPSWs demonstrated approximately similar results. Compared with the single SSP layer, the proposed configuration of the twin SSP layer with a stiffened opening suggest to more sufficiency create SSP openings in the SPSW compared to that of other configurations. Finally, a tabular SPF quantification is exhibited for SPSWs with openings.

• Journal of the Korean GEO-environmental Society
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• v.12 no.1
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• pp.61-70
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• 2011

The impact protection system consists of an arrangement of circular sheet pile cofferdams-denoted dolphin structuredeeply embedded in the seabed, filled with crushed rock and closed at the top with a robust concrete cap. Centrifuge model tests were performed to investigation the behaviors of dolphins in this study. Total 7 quasi-model tests and 11 dynamic model tests were performed. The main experimental results can be summarized as follows. Firstly, The experimental force-displacement results for quasi-static tests show a limited influence on the initial stiffness of the structure from the change in fill density and the related change in the stiffness of the fill. And by comparing the dissipation at the same dolphin displacement it was found that the denser fill increase the dissipation by 16% for the 20m dolphin and by 23% for the 30m dolphin. The larger sensitivity for the large dolphin is explained by a larger contribution to the dissipation from strain in the fill. In low level impacts the dynamic force-response is up to 26~58% larger than the quasi-static and the dissipation response is showed larger in small displacement. Hence, it is concluded conservative to use the quasi-static response characteristics in the approximation of the response, and it is further concluded that the dolphin resistance to low level impacts is demonstrated to be equivalent and even superior to the high level impacts.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.3
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• pp.492-498
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• 2021

This feasibility study evaluated an optically transparent planar antenna using liquid salt-water as the conducting material. The most significant reason behind using liquid salt-water for transparent antenna applications is its excellent average optical transparency (OTav) (> 95% at a salinity of 40 ppt) compared to other typical solid transparent thin-film electrodes, such as indium tin oxide (ITO:> 73%) or multi-layer films (MLF: > 78%). Each conductive arm of the proposed dipole is constructed from a salt-water layer held between two clear planar acrylic layers (��r = 2.61, tan�� = 0.01, OTav > 90%) (acrylic/salt-water/acrylic; ASA) due to surface tension. To examine the electrical and optical properties of the ASA structure, the surface tension was measured to determine the thickness of the salt-water layer that finalized its sheet resistance and OTav. The average gain and efficiency of the antenna were 1.72 dBi and 74%, respectively, in the operating UHF (Ultra high frequency) band (470-771 MHz). Therefore, the proposed antenna can be a good candidate for applications as a transparent planar antenna using salt-water.

• The Journal of the Korea institute of electronic communication sciences
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• v.16 no.3
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• pp.443-450
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• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Applied Chemistry for Engineering
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• v.33 no.1
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• pp.50-57
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• 2022

Ti-In-Zn-O (TIZO)/Ag/TIZO multilayer transparent electrodes were prepared on glass substrates at room temperature using RF/DC magnetron sputtering. Obtained multilayer structure comprising TIZO/Ag/TIZO (10 nm/10 nm/40 nm) with the total thickness of 60 nm showed a transmittance of 86.5% at 650 nm and a sheet resistance of 8.1 Ω/□. The multilayer films were expected to be applicable for use in energy-saving smart window based on polymer-dispersed liquid crystal (PDLC) because of their transmittance properties to effectively block infrared rays (heat rays). We investigated the effects of the content ratio of prepolymer, the thickness of the PDLC coating layer, and the ultraviolet (UV) light intensity on electro-optical properties, and the surface morphology of polyester acrylate-based PDLC systems using new TIZO/Ag/TIZO transparent conducting electrodes. A PDLC cell with a thickness of 15 ㎛ PDLC layer photocured at an UV intensity of 1.5 mW/cm² exhibited good driving voltage, favorable on-state transmittance, and excellent off-haze. The LC droplets formed on the surface of the polymer matrix of the PDLC composite had a size range of 1 to 3 ㎛ capable of efficiently scattering incident light. Also, the PDLC-based smart window manufactured using TIZO/Ag/TIZO multi-layered transparent electrodes in this study exhibited a light brown, which will have an advantage in terms of aesthetics.

• The Journal of the Korea institute of electronic communication sciences
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• v.17 no.6
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• pp.1069-1074
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• 2022

In this study, we prepared ITO thin films on the Nb₂O₅/SiO₂ double buffer layer and investigated electrical and optical properties according to the change of SiO₂ buffer layer thickness (40~50nm). The ITO thin film fabricated on the Nb₂O₅/SiO₂ double buffer layer exhibited a broad surface roughness with a small value ranging of 0.815 to 1.181nm, and the sheet resistance was 99.3 to 134.0Ω/sq. It seems that there is no problem in applying the ITO thin film to a capacitive touch screen panel. In particular, the average transmittance in the short-wavelength (400~500nm) region and the chromaticity (b^*) of the ITO thin film deposited on the Nb₂O₅(10nm)/SiO₂(40nm) double buffer layer showed significantly improved results as 83.58% and 0.05, respectively, compared to 74.46% and 4.28 of ITO thin film without double buffer layer. As a result, it was confirmed that optical properties such as transmittance in the short-wavelength region and chromaticity were remarkably improved due to the index matching effect in the ITO thin film with the Nb₂O₅/SiO₂ double buffer layer.

• Clean Technology
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• v.28 no.4
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• pp.278-284
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• 2022

This study presents an excellent planar heater based on low-dimensional composites. By optimizing the ratio of 1D carbon nanotubes (CNT) and 2D MXene (Ti₃C₂T_X), it is possible to create a planar heater that has superior electrical conductivity and high heat generation characteristics. Low-dimensional composites were prepared by mixing CNT paste and MXene solution with eco-friendly waterborne polyurethane (WPU). In order to find the optimal mixing ratio for the MXene-CNT-WPU composites, samples with MXene to CNT weight ratios of 3:1, 1:1, 1:3, 1:7, and 1:14 were investigated. In addition to these different weight ratios, 5 wt% WPU was equally applied to each sample. It was confirmed that the higher the weight ratio of CNT, the lower the sheet resistance and the higher the heating temperature. In particular, when the MXene-CNT-WPU planar heater was fabricated by mixing MXene and CNT at a weight ratio of 1:7 and 1:14, the heating temperature was higher than the heating temperature of a CNT-WPU planar heater. These characteristics are due to the optimized mixture of the 1D materials (CNT) and the 2D materials (MXene) causing the formation of a flat surface and a dense network structure. The low-dimensional composites manufactured with the optimized mixing ratios found in this study are expected to be applied in flexible electronic devices.

• Journal of the Korean Electrochemical Society
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• v.27 no.3
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• pp.97-104
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• 2024

The electrodes of commercialized lithium secondary batteries are manufactured through a wet coating process, and the drying process (DC) is a very important factor as to electrode production speed and process cost. In this study, silicon anodes were manufactured under high-temperature (180 ℃) and low-temperature (50 ℃) DC to investigate the quality and the electrochemical performance of Si-electrodes according to DC. High-temperature DC can quickly evaporate the solvent in the Si-electrode slurry, improving the electrode production rate. However, this also causes the electrode composite to peel off from the current collector. As a result, the Si-electrode's adhesion weakened, and the electrode coating's quality deteriorated. In addition, the Si-electrode manufactured under high-temperature was found to have a thicker composite material than the Si-electrode manufactured under low-temperature. Si-electrodes manufactured under high-temperature had higher sheet resistance and lower electrical conductivity than those manufactured under low-temperature. Consequently, the Si-electrode manufactured under low-temperature showed 152.5% superior cycle performance compared to the Si-electrode manufactured under high-temperature. (Discharge capacities of Si-electrodes manufactured under high-temperature and low-temperature DC were 844 and 1287 mAh g^-1, respectively, after 300 cycles). Establishing the DC of Si-electrodes can easily provide new perspectives to improve the quality and stability of Si-electrodes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.239-240
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• 2008

As semiconductor devices are scaled down for better performance and more functionality, the Cu-based interconnects suffer from the increase of the resistivity of the Cu wires. The resistivity increase, which is attributed to the electron scattering from grain boundaries and interfaces, needs to be addressed in order to further scale down semiconductor devices [1]. The increase in the resistivity of the interconnect can be alleviated by increasing the grain size of electroplating (EP)-Cu or by modifying the Cu surface [1]. Another possible solution is to maximize the portion of the EP-Cu volume in the vias or damascene structures with the conformal diffusion barrier and seed layer by optimizing their deposition processes during Cu interconnect fabrication, which are currently ionized physical vapor deposition (IPVD)-based Ta/TaN bilayer and IPVD-Cu, respectively. The use of in-situ etching, during IPVD of the barrier or the seed layer, has been effective in enlarging the trench volume where the Cu is filled, resulting in improved reliability and performance of the Cu-based interconnect. However, the application of IPVD technology is expected to be limited eventually because of poor sidewall step coverage and the narrow top part of the damascene structures. Recently, Ru has been suggested as a diffusion barrier that is compatible with the direct plating of Cu [2-3]. A single-layer diffusion barrier for the direct plating of Cu is desirable to optimize the resistance of the Cu interconnects because it eliminates the Cu-seed layer. However, previous studies have shown that the Ru by itself is not a suitable diffusion barrier for Cu metallization [4-6]. Thus, the diffusion barrier performance of the Ru film should be improved in order for it to be successfully incorporated as a seed layer/barrier layer for the direct plating of Cu. The improvement of its barrier performance, by modifying the Ru microstructure from columnar to amorphous (by incorporating the N into Ru during PVD), has been previously reported [7]. Another approach for improving the barrier performance of the Ru film is to use Ru as a just seed layer and combine it with superior materials to function as a diffusion barrier against the Cu. A RulTaN bilayer prepared by PVD has recently been suggested as a seed layer/diffusion barrier for Cu. This bilayer was stable between the Cu and Si after annealing at $700^{\circ}C$ for I min [8]. Although these reports dealt with the possible applications of Ru for Cu metallization, cases where the Ru film was prepared by atomic layer deposition (ALD) have not been identified. These are important because of ALD's excellent conformality. In this study, a bilayer diffusion barrier of Ru/TaCN prepared by ALD was investigated. As the addition of the third element into the transition metal nitride disrupts the crystal lattice and leads to the formation of a stable ternary amorphous material, as indicated by Nicolet [9], ALD-TaCN is expected to improve the diffusion barrier performance of the ALD-Ru against Cu. Ru was deposited by a sequential supply of bis(ethylcyclopentadienyl)ruthenium [Ru$(EtCp)_2$] and $NH_3$plasma and TaCN by a sequential supply of $(NEt_2)_3Ta=Nbu^t$ (tert-butylimido-trisdiethylamido-tantalum, TBTDET) and $H_2$ plasma. Sheet resistance measurements, X-ray diffractometry (XRD), and Auger electron spectroscopy (AES) analysis showed that the bilayer diffusion barriers of ALD-Ru (12 nm)/ALD-TaCN (2 nm) and ALD-Ru (4nm)/ALD-TaCN (2 nm) prevented the Cu diffusion up to annealing temperatures of 600 and $550^{\circ}C$ for 30 min, respectively. This is found to be due to the excellent diffusion barrier performance of the ALD-TaCN film against the Cu, due to it having an amorphous structure. A 5-nm-thick ALD-TaCN film was even stable up to annealing at $650^{\circ}C$ between Cu and Si. Transmission electron microscopy (TEM) investigation combined with energy dispersive spectroscopy (EDS) analysis revealed that the ALD-Ru/ALD-TaCN diffusion barrier failed by the Cu diffusion through the bilayer into the Si substrate. This is due to the ALD-TaCN interlayer preventing the interfacial reaction between the Ru and Si.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.21-29
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• 2016

In this paper, we developed a flexible transparent capacitive pressure sensor which can recognize X and Y coordinates and the size of force simultaneously by sensing a change in electrical capacitance. The flexible transparent capacitive pressure sensor was composed of 3 layers which were top electrode, pressure sensing layer, and bottom electrode. Silver nanowire(Ag NW)/poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) hybrid film was used for top and bottom flexible transparent electrode. The fabricated capacitive pressure sensor had a total size of 5 inch, and was composed of 11 driving line and 19 sensing line channels. The electrical, optical properties of the Ag NW/PEDOT:PSS and capacitive pressure sensor were investigated respectively. The mechanical flexibility was also investigated by bending tests. Ag NW/PEDOT:PSS exhibited the sheet resistance of $44.1{\Omega}/square$, transmittance of 91.1%, and haze of 1.35%. Notably, the Ag NW/PEDOT:PSS hybrid electrode had a constant resistance change within a bending radius of 3 mm. The bending fatigue tests showed that the Ag NW/PEDOT:PSS could withstand 200,000 bending cycles which indicated the superior flexibility and durability of the hybrid electrode. The flexible transparent capacitive pressure sensor showed the transmittance of 84.1%, and haze of 3.56%. When the capacitive pressure sensor was pressed with the multiple 2 mm-diameter tips, it can well detect the force depending on the applied pressure. This indicated that the capacitive pressure sensor is a promising scheme for next generation flexible transparent touch screens which can provide multi-tasking capabilities through simultaneous multi-touch and multi-force sensing.