• The Transactions of the Korean Institute of Power Electronics
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• v.4 no.1
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• pp.99-104
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• 1999

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme which senses the collector voltage and controls the gate signal actively limits the overvoltage. The new series connected IGBT gate driver is made and its validity is verified by the experimental results in the series connected IGBT circuit.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.48 no.2
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• pp.83-88
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• 1999

Series connection of power semiconductor devices is selected in high voltage and high power applications. It is important to prevent the overvoltage from being induced across a device above ratings by the proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by controlling the slope of collector voltage under the turn-off transient in the series connected IGBTs. The proposed gate control scheme changes the slope of collector voltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• Proceedings of the KIEE Conference
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• 1998.11a
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• pp.195-197
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• 1998

The large scale industry needs high voltage converters. Therefore series connection of power semiconductor devices is necessary. It is important to prevent a device induced the overvoltage above ratings by proper voltage balancing in the field of IGBT series connection. In addition, the overvoltage induced by a stray inductance has to be limited in the high power circuit. This paper proposes a new gate control scheme which can balance the voltage properly and limit the overshoot by control the slope of collector voltage under series connected IGBT turn-off transient. The propose gate control scheme limits the overvoltage by sensing the collector voltage and controlling the gate signal actively. The new series connected IGBT gate driver is made and its validity is verified by the experimental results for series connected IGBT circuit.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.88-99
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Because it can generate up to 60kV pulse output voltage without any step- up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation and rectangular pulse shape. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. To reduce component for gate power supply, a simple and robust gate drive circuit is proposed. For gating signal synchronization, full bridge invertor and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of short circuit protection.

• Proceedings of the KIEE Conference
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• 2006.07b
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• pp.917-918
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• 2006

In this paper, a novel new pulse power generatorbased on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is importantfor series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.43-46
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• 2007

In this paper, a novel new pulse power generator based on IGBT stacks is proposed for pulse power application. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and one series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 850VDC pulse. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important for series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used. Proposed scheme has lots of advantages such as long lifecyle, compact size, flat topped pulse forming, small weight, protection for arc, high efficiency and flexibility to generate various kinds of pulse output.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.904-905
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• 2008

In this paper, a novel 60kV, 300A, 3kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 9 power stages to generate maximum 60kV output pulse and 15kW series resonant power inverter to charge DC capacitor voltage. Each power stages are configured as 8 series connected power cells and each power cell generates up to 830VDC, 300A pulses. Finally pulse output voltage is applied using total 72 series connected IGBTs. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, full bridge inverter and pulse transformer generates on-off signals of IGBT gating and specially designed gate power circuit was used.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.1
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• pp.39-45
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• 2000

최근에 전력용 반도체 스위치의 정격이 커지면서 IGBT와 같은 소자는 그 편리성과 대용량화로 점차 많은 응용분야에 이용되고 있다. 특히 보다 높은 전압 정격을 용구하는 중·대용량 분야, 소용량이면서 고압 정격을 요구하는 분야의 저가의 전력용 반도체 고압 스위치가 요구되는 분야 등에서 높은 정격을 가지는 IGBT스위치를 구현하기 위하여 그 소자들간의 직렬로 연결하는 것이 필수적이다. 본 논문에서는 수 kV의 동작전압을 가지는 스위치를 실현하기 위하여 기존의 직렬 연결된 IGBT에 제안된 보조회로를 삽입하였다. 본 논문에서는 IGBT를 이용한 고압스위칭 동작원리와 그 기능을 검증하기 위해 4개의 IGBT를 직렬연결한 3kV/45A급 스위치를 제작하여 과도상태 및 정상상태에서의 전압 분배를 실험하였다.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1023_1024
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• 2009

In this paper, a novel 10kV, 50A, 50kHz pulsed power supply based on IGBT stacks is proposed. Proposed scheme consists of series connected 12 IGBT to generate maximum 10kV output pulse and 10kW full bridge phase-shifted zero voltage switching converter to charge DC capacitor voltage. Each IGBTs are sustain the 830V of capacitor voltage at turn off interval. By turn on the each IGBT for the same time it gives the path for the series connection of charged capacitor. From above turn on and off procedure, high voltage repetitive pulse is applied to the load. The synchronization of gating signal is important of series operation of IGBTs. For gating signal synchronization, specially designed gate power circuit using full bridge inverter and pulse transformer is developed to generate IGBT gating signal.

• Journal of Power Electronics
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• v.16 no.2
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• pp.786-797
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• 2016

This paper describes the design and development of a novel semiconductor-based solid-state switch for damped oscillating voltage test system. The proposed switch is configured as two identical series-connected switch stacks, each of which comprising 10 series-connected IGBT function units. Each unit consists of one IGBT, a gate driver, and an auxiliary voltage sharing circuit. A single switch stack can block 20 kV-rated high voltage, and two stacks in series are proven applicable to 30 kV-rated high voltage. The turn-on speed of the switch is approximately 250 ns. A flyback topology-based power supply system with a front-end power factor correction is built for the drive circuit by loosely inductively coupling each unit with a ferrite core to the primary side of a power generator to obtain the advantages of galvanic isolation and compact size. After the simulation, measurement, and estimation of the parasitic effect on the gate driver, a prototype is assembled and tested under different operating regimes. Experimental results are presented to demonstrate the performance of the developed prototype.