• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.96.1-96.1
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• 2012

SOFC는 다른 연료전지보다 상대적으로 높은 구동 온도를 가지며 그로인해 높은 에너지 효율을 가진다. 먼저 금속연결제의 경우 높은 고온에서 산화 반응이 쉽게 일어나기 때문에 이로 인하여 연결재의 주요 특성인 전기전도도의 감소와 부피변화로 인한 크랙등이 유발되어 연결재의 주요 기능인 전기적인 연결 뿐만 아니라, 물리적으로 양극과 음극의 차폐 또한 어려워져 장기 구동에 있어서 주요 결함의 원인이되고 있다. 이로 인하여 많은 세라믹 연결재의 개발이 진행되어왔고, 이중에서 perovskite-structure를 가지는 LCO계의 연결재에 대한 연구가 활발히 진행되고 있다. $LaCrO_3$는 열팽창 계수가 주요 구성소재들과 유사하다는 장점과 도핑과 친환으로 인하여 특성제어가 용이하다는 이유 때문에 주로 사용되고 있다. 그러나 $LaCrO_3$는 낮은 전기전도도와 높은 소결온도에서 Cr휘발되는 단점이 있다. 이를 해결하기 위해서 A에 희토류와 B-site에 전위금속을 치환하여 소결 온도를 낮춘 연구들이 진행 되었다. 본 연구에서는 이런 결과 중 $La_{0.7}Ca_{0.3}Cr_{0.9}Co_{0.1}O_3$조성에 소결조제를 첨가하여 그에 따른 특성변화를 관찰하였다.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.95.2-95.2
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• 2012

고온형 SOFC의 개발에 있어 스택의 신뢰성을 확보하는데 가장 중요한 핵심기술은 스택 구성요소 사이를 접합하는데 필요한 고온형 밀봉재의 개발이다. SOFC 스택에서의 밀봉재는 고체전해질과 접속자 사이에서 음극에 공급되는 연료가스와 양극에 공급되는 공기가 서로 혼합되는 것을 방지하는 역할은 물론 기계적으로 취약한 단전지의 보호 및 스택전체 구조물의 구조적 일체성(Structural integrity)을 부여하는데 주목적이 있다. 현재 기체 기밀성을 유지하기 위한 밀봉재는 크게 유리 및 결정화 유리계, mica및 mica/유리복합재료, 유리/충전재 복합재료 등이 사용되고 있으나 다수의 단위전지로 구성되는 스택 구성에서 스택의 열기계적 안정성 및 장기수명을 보장하기 위해서는 본 연구에서 개발하고자 하는 복합밀봉재가 가장 적합할 것으로 예상되고 있다. 본 연구에서는 SiO-B2O3-RO계에 BaO, SrO를 일정비율로 첨가하여 제작된 유리 frit을 열처리하여 물리화학적 물성변화를 검토하였으며, $750^{\circ}C$ 이하의 연화점을 갖는 유리를 기지상으로 하고 세라믹 보강재를 첨가한 고온형 복합밀봉재를 개발하고 그 물리화학적 안정성, 열기계적 안정성 및 밀봉 특성을 평가하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.205-205
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• 2008

PZT 세라믹은 우수한 유전 및 압전특성을 갖고 있어 변압기, 센서 및 엑츄에이터 등에 널리 응용되고 있다. 그러나, 우수한 특성에도 불구하고 PZT세라믹스의 소결시 PbO의 높은 유독성 및 휘발로 인하여 환경오염을 야기 시킨다. 그러므로 PbO로 구성된 세라믹을 대체하기 위한 우수한 압전특성을 가진 비납계 세라믹스 개발이 연구의 주류를 이루고 있다. 그 중 비납계 NKN와 BZT는 대체물질로 많이 관심을 받고 있다. 이는 일반적인 NKN조성은 우수한 압전성과 높은 큐리온도를 가지고 있을 뿐만 아니라, BZT조성의 Zr성분이 큐리온도를 낮추거나 유전특성을 졸게 하여 유전율 곡선을 완화하게 하는 특징이 있다. 하지만 NKN은 $1140^{\circ}C$이상의 소결온도에서 K의 휘발특성으로 인해 소성 후에도 주변의 수분을 흡수하는 조해성이 발생하는 문제가 발생한다. 그래서 본 연구에서는 낮은 온도에서 NKN계 세라믹스의 밀도를 증가시킬 뿐만 아니라, 우수한 유전 및 압전특성을 갖는 세라믹스를 제조하고자 비납계 $0.94(K_{0.5}Na_{0.5})NbO_3-0.06Ba(Zr_{0.05}Ti_{0.95})O_3$ (NKN-BZT)의 조성을 사용하였고 소결조제로는 $MnO_2$, NiO, $Bi_2O_3$, ZnO, $Li_2CO_3$, CuO등을 변화주어 유전 및 압전 특성을 알아보았다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.617-621
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• 2010

($K_{0.5}Na_{0.5}$)($Nb_{0.96}Sb_{0.04}$)$O_3$+1.2 mol% $K_4CuNb_8O_{23}$ ceramics doped with iron oxide ($Fe_2O_3$) were prepared by a conventional mixed oxide method. And then, their piezoelectric and dielectric properties were investigated as a function of $Fe_2O_3$ addition. X-ray diffraction studies reveal that $Fe^{3+}$ diffuses into the NKN lattices to form a solid solution with a pure perovskite structure at room temperature. At the sintering temperature of $1,060^{\circ}C$, when 0.2 mol% $Fe_2O_3$ was doped, the piezoelectric constant ($d_{33}$), electromechanical coupling factor (Kp), and mechanical quality factor ($Q_m$) showed the excellent values of 131.67 pC/N, 0.436, and 696.36, respectively. Results show that $Fe_2O_3$ deped ($K_{0.5}Na_{0.5}$)($Nb_{0.96}Sb_{0.04}$)$O_3$+1.2 mol% $K_4CuNb_8O_{23}$ lead-free piezoelectric ceramics are a promising lead free material for piezoelectric transformer applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.441-441
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• 2011

$TiO_2$ nanoparticles were grown on carbon fiber by atomic later deposition (ALD) with TTIP $(Ti(OCH(CH_3)_2)_4$ and $H_2O$ precusors. After sampe surfaces were treated by electron beam (1 MeV, 5 KGy), an improvement in the photocatalytic reacitivity of $TiO_2$ nanoparticles on carbon fiber was observed. An increase in the population of hydroxyl group on $TiO_2$ particles and the oxidation of carbon fiber were found upon e-beam exposure, whereas there was no noticeable changes of their morphology. It implies that those changes in O and C 1s state of $TiO_2$ particles/carbon fiber induced by e-beam treatment could be related to the enhancement of the photocatalytic activity. In contrast, when carbon fiber fully covered with $TiO_2$ thick films was treated with high-energy electron beam under same conditions, the improvement of photocatalytic activity as well as any changes in XPS spectra (Ti 2p, O 1s and C 1s) could not be found.

• Journal of Industrial Technology
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• v.40 no.1
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• pp.19-23
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• 2020

In this paper, we proposed a PC-based CNC control system using EtherCAT-based servo drive and I/O device. The default communication of LinuxCNC is a parallel port, and data processing with high bandwidth is impossible. However, it is possible to apply various bandwidth devices through the application of EtherCAT, one of the industrial Ethernet communications with high bandwidth. Therefore, the hardware control method of LinuxCNC was applied through EtherCAT communication from the existing parallel port. Finally, through HAL configuration, I/O device operation check and 3-axis motion control proved the LinuxCNC system with EtherCAT.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.40-40
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• 2010

Structural, electrical, and optical properties of atomic layer-controlled AI-doped ZnO (ZnO:Al) films grown on glass by atomic layer deposition (ALD) were characterized with various $Al_2O_3$ film contents for use as transparent electrodes. Unlike films made using sputtering methods, the diffraction peak position of the films grown by ALD based on alternate self-limiting surface chemical reactions moved progressively to a wider angle (red shift) with increasing $Al_2O_3$ film content, which seems to be evidence of Zn substitution in the film by layer-by-layer growth. By adjusting the $Al_2O_3$ film content, the electrical resistivity of ZnO:Al film with the $Al_2O_3$ film content of 2.96% reached the lowest electrical resistivity of $9.80{\times}10^{-4}\Omega{\cdot}cm$, in which the carrier mobility, carrier concentration, and optical transmittance were $11.20\;cm^2V^{-1}s^{-1}$, $5.69{\times}10^{20}\;cm^{-3}$, and 94.23%, respectively. Moreover, the estimated figure of merit value for the transparent conductive oxide applications from our best sample was $7.7\;m{\Omega}^{-1}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.185-185
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• 2009

The aligned liquid crystals (LCs) display on SiNx thin films using ion-beam (IB) irradiation was studied with controllability ofpretilt angle depending on incident energies of the IB. Plasma-enhanced chemical vapor deposition (PECVD) was used to orient the LCs on SiNx alignment films. The LCs alignment property for the SiNx thin films were observed to verify the practical application potential (figure1). A good LCs alignment of vertical alignment LCs cells on SiNx thin film surfaces irradiated with incident IB energy of 1800eV was achieved. Also, a good LC alignment by the IB irradiation on the SiNx thin film surface was observed at an annealing temperature of $180^{\circ}C$. However, the alignment defects of the nematic liquid crystal was observed at an annealing temperature above $230^{\circ}C$. The atomic force microscopy (AFM) images of LCs on SiNx thin film surfaces irradiated with IB energy was used for the surface analysis.

• Journal of the Korean Society for Precision Engineering
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• v.17 no.9
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• pp.181-188
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• 2000

This paper deals with an analysis of the compliance characteristic for effective peg-in-hole task using robot hand without inter-finger coupling. We first observe the fact that some of coupling stiffness elements cannot be planned arbitrary. next we classify the task of inserting a peg-in-a-hole into two contact styles between the peg and the hole. Then we analyze the conditions of the specified stiffness matrix in the operational space to successfully and more effectively achieve the give peg-in-hole task for each case. It is concluded that the location of compliance center on the peg and the coupling stiffness element existing between the translational and the rotational direction play important roles for successful peg-in-hole task. Simulation results are included to verify the feasibility of the analytic results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.1-7
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• 2000

The SNOSFET memory devices with ultrathin ONO(tunnel oxide-nitride-blocking oxide) gate dielectric were fabricated using n-well CMOS process and investigated its characteristics. The thicknesses of tunnel oxide, nitride and blocking oxide were $23{\AA},\; 53{\AA}\; and\; 33{\AA}$, respectively. Auger analysis shows that the ONO layer is made up of $SiO_2(upper layer of blocking oxide)/O-rich\; SiO_x\N\_y$. It clearly shows that the converting layer with $SiO_x\N\_y(lower layer of blocking oxide)/N-rich SiO_x\N\_y(nitride)/O-rich SiO_x\N\_y(tunnel oxide)$. It clearly shows that the converting layer with $SiO_x\N\_y$ phase exists near the interface between the blocking oxide and nitride. The programming condition of +8 V, 20 ms, -8 V, 50 ms is determined and data retention over 10 years is obtained. Under the condition of 8 V programming, it was confirmed that the modified Fowler-Nordheim tunneling id dominant charge transport mechanism. The programmed threshold voltage is distributed less than 0.1 V so that the reading error of memory stated can be minimized. An $8\times8$ NAND type flash EEPROM with SONOSFET memory cell was designed and simulated with the extracted SPICE parameters. The sufficient read cell current was obtained and the upper limit of $V_{TH}$ for write state was over 2V.