• 제목/요약/키워드: Sensor Array

검색결과 872건 처리시간 0.032초

초점면 배열 방식 열상 카메라 시스템의 화질 개선 연구 (A Study on the Improvement of Image Quality for a Thermal Imaging System with focal Plane Array Typed Sensor)

  • 박세화
    • 한국산학기술학회논문지
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    • 제1권2호
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    • pp.27-31
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    • 2000
  • 대상 물체의 온도분포를 해석하고 계측하기 위해 열상 장비가 구현된다. 시스템의 주요한 부분은 초점면 배열 형태의 센서가 적용된 열상 카메라이다. 적용된 열상 센서는 중파장 적외선 영역의 신호를 검출하며 열상을 형성하기 위한 기본 신호를 출력한다. DSP가 활용되어 센서 신호처리를 통해 열상을 구성하고 NTSC 신호 및 디지털 신호 출력을 한다. 열상의 화질을 개선하기 위해 이점 교정법을 적용한다. 이는 낮은 온도와 높은 온도를 기준으로 하여 초점면 배열 센서 화소 신호의 공간적인 비균일함을 교정하는 것으로서 실험 결과를 통해 열상의 화질이 개선됨을 보인다.

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시간지연 샘플링을 이용한 광섬유 격자 센서어레이의 선형 복조 (Linear interrogation of fiber Bragg grating sensor array using time-delayed quadrature sampling technique)

  • 김종섭;송민호
    • 한국광학회지
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    • 제15권1호
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    • pp.34-38
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    • 2004
  • 파장가변형 광섬유레이저로 광섬유격자 센서어레이를 복조하는 방법을 제안하였다. 레이저의 출력파장을 시간지연 샘플링으로 분석하고 이를 이용하여 기존 시스템의 비선형적 동작특성을 개선하였다. 계산된 파장값은 센서어레이 출력파평의 각 피크에 할당되어 파장가변필터의 비선형성에 영향받지 않고 가해진 물리량에 대하여 항상 선형적인 출력을 얻게 하였다. 실험을 통하여 약 20 pm의 분해능을 얻었으며 이는 고속의 위상변조를 사용할 경우 크게 개선될 수 있음을 보였다.

화소 전류 보상 기법을 이용한 볼로미터 형의 비냉각형 적외선 이미지 센서 (Bolometer-Type Uncooled Infrared Image Sensor Using Pixel Current Calibration Technique)

  • 김상환;최병수;이지민;오창우;신장규;박재현;이경일
    • 센서학회지
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    • 제25권5호
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    • pp.349-353
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    • 2016
  • Recently, research on bolometer-type uncooled infrared image sensor which is made for industrial applications has been increasing. In general, it is difficult to calibrate fixed pattern noise (FPN) of bolometer array. In this paper, average-current calibration algorithm is presented for reducing bolometer resistance offset. A resistor which is produced by standard CMOS process, on the average, has a deviation. We compensate for deviation of each resistor using average-current calibration algorithm. The proposed algorithm has been implemented by a chip which is consisted of a bolometer pixel array, average current generators, current-to-voltage converters (IVCs), a digital-to-analog converter (DAC), and analog-to-digital converters (ADCs). These bolometer-resistor array and readout circuit were designed and manufactured by $0.35{\mu}m$ standard CMOS process.

Design and Implementation of $160\times192$ pixel array capacitive type fingerprint sensor

  • Nam Jin-Moon;Jung Seung-Min;Lee Moon-Key
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2004년도 ICEIC The International Conference on Electronics Informations and Communications
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    • pp.82-85
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    • 2004
  • This paper proposes an advanced circuit for the capacitive type fingerprint sensor signal processing and an effective isolation structure for minimizing an electrostatic discharge(ESD) influence and for removing a signal coupling noise of each sensor pixel. The proposed detection circuit increases the voltage difference between a ridge and valley about $80\%$ more than old circuit. The test chip is composed of $160\;\times\;192$ array sensing cells $(9,913\times11,666\;um^2).$ The sensor plate area is $58\;\times\;58\;um^2$ and the pitch is 60um. The image resolution is 423 dpi. The chip was fabricated on a 0.35um standard CMOS process. It successfully captured a high-quality fingerprint image and performed the registration and identification processing. The sensing and authentication time is 1 sec(.) with the average power consumption of 10 mW at 3.0V. The reveal ESD tolerance is obtained at the value of 4.5 kV.

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Fabrication and characterization of a small-sized gas identification instrument for detecting LPG/LNG and CO gases

  • Lee Kyu-Chung;Hur Chang-Wu
    • Journal of information and communication convergence engineering
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    • 제4권1호
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    • pp.18-22
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    • 2006
  • A small-sized gas identification system has been fabricated and characterized using an integrated gas sensor array and artificial neural-network. The sensor array consists of four thick-film oxide semiconductor gas sensors whose sensing layers are $In_{2}O_{3}-Sb_{2}O_{5}-Pd-doped\;SnO_2$ + Pd-coated layer, $La_{2}O_{5}-PdCl_{2}-doped\;SnO_2,\;WO_{3}-doped\;SnO_{2}$ + Pt-coated layer and $ThO_{2}-V_{2}O_{5}-PdCl_{2}\;doped\;SnO_{2}$. The small-sized gas identification instrument is composed of a GMS 81504 containing an internal ROM (4k bytes), a RAM (128 bytes) and four-channel AD converter as MPU, LEDs for displaying alarm conditions for three gases (liquefied petroleum gas: LPG, liquefied natural gas: LNG and carbon monoxide: CO) and interface circuits for them. The instrument has been used to identify alarm conditions for three gases among the real circumstances and the identification has been successfully demonstrated.

초음파센서 배열을 이용한 이동로봇의 지도작성 (Mobile robot map making using ultrasonic sensor array)

  • 범희락;조형석
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 1993년도 한국자동제어학술회의논문집(국내학술편); Seoul National University, Seoul; 20-22 Oct. 1993
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    • pp.119-124
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    • 1993
  • This paper describes a method of producing maps of an indoor environment with an autonomous mobile robot equipped with sonar array. This method uses the certainty grid suitable for accommodation of inaccurate sensor data and real-time navigation. Each grid contains a certainty vale that indicates the measure of confidence that an obstacle exists within th grid area. The scheduled firing method is used to eliminate the crosstalk between ultrasonic sensors. The effectiveness of the method is verified by a series of experiments.

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집적도를 높인 평면형 가스감지소자 어레이 제작기술 (New Fabrication method of Planar Micro Gas Sesnor Array)

  • 정완영
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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    • pp.727-730
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    • 2003
  • Thin tin oxide film with nano-size particle was prepared on silicon substrate by hydrothermal synthetic method and successive sol-gel spin coating method. The fabrication method of tin oxide film with ultrafine nano-size crystalline structure was tried to be applied to fabrication of micro gas sensor array on silicon substrate. The tin oxide film on silicon substrate was well patterned by chemical etching upto 5${\mu}{\textrm}{m}$width and showed very uniform flatness. The tin oxide film preparation method and patterning method were successfully applied to newly proposed 2-dimensional micro sensor fabrication.

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Hopper type WDM을 이용한 단일모드 FBG(Fiber Bragg Grating)음향센서 트랜스듀서 개발연구 (A Study on The transducer of acoustic sensor to be Single-mode FBG using Hopper Type WDM be in the Making)

  • 김경복
    • 전자공학회논문지
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    • 제51권10호
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    • pp.256-263
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    • 2014
  • 최근 국내에서 개발된 광섬유 격자소자(FBG: Fiber Bragg Grating)를 이용하여, 3종의 Hopper type WDM FBG Acoustic Transducer를 설계 및 제작 하였다. 제작된 3종류의 Hopper type WDM FBG Acoustic Transducer는 기존의 광섬유 센서가 지니고 있는 우수한 장점들을 지니고 있을 뿐만 아니라, sensor arm 구성이 간단하여 실용화에 큰 장점을 지니고 있다. 제작된 3종류의 Hopper type WDM FBG Acoustic Transducer 는 주파수 특성이 10 Hz~18 kHz 대역에서 음파 검출이 가능하였고, 트랜스듀서의 최적 공진 조건을 이용하여 최대 8.6 m 거리까지 신호 검출이 가능하였다. 특히, 기존의 음향 센서를 대신하여 전기적 잡음이 많고, 열악한 환경에서 저 주파수 신호 검출에 실용화를 기대할 수 있고, 센서 어레이(array)시스템 구성을 통하여 고감도 및 다중점 음파 검출 시스템으로 발전될 수 있다.

용량형 지문인식센서를 위한 전하분할 방식 감지회로의 CMOS 구현 (A CMOS integrated circuit design of charge-sharing scheme for a capacitive fingerprint sensor)

  • 남진문;이문기
    • 센서학회지
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    • 제14권1호
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    • pp.28-32
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    • 2005
  • In this paper, a CMOS integrated detection circuit for capacitive type fingerprint sensor signal processing is described. We designed a detection circuit of charge-sharing sensing scheme. The proposed detection circuit increases the voltage difference between a ridge and valley. The test chip is composed of $160{\times}192$ array sensing cells (12 by $12.7{\;}mm^{2}$). The chip was fabricated on a 0.35 m standard CMOS process. Measured difference voltage between a ridge and valley was 0.95 V.

비정질 실리콘을 이용한 미세 피치 적외선 이미지 센서 제조 및 특성 (Fabrication and characterization of fine pitch IR image sensor using a-Si)

  • 김경민;김병일;김희연;장원수;김태현;강태영
    • 센서학회지
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    • 제19권2호
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    • pp.130-136
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    • 2010
  • The microbolometer array sensor with fine pitch pixel array has been implemented to the released amorphous silicon layer supported by two contact pads. For the design of focal plane mirror with geometrical flatness, the simple beam test structures were fabricated and characterized. As the beam length decreased, the effect of beam width on the bending was minimized, Mirror deformation of focal plane in a real pixel showed downward curvature by residual stress of a-Si and Ti layer. The mirror tilting was caused by the mis-align effect of contact pad and confirmed by FEA simulation results. The properties of bolometer have been measured as such that the NETD 145 mK, the TCR -2 %/K, and thermal time constant 1.99 ms.