• 한국전기전자재료학회논문지
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• 제25권1호
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• pp.33-36
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• 2012

In this study, the thickness effects of $Al_2O_3$ layer on the sensing properties of $SiO_2/Al_2O_3$ (OA) stacked membrane were investigated using electrolyte-insulator-semiconductor (EIS) structure for high quality pH sensor. The $Al_2O_3$ layers with a respective thickness of 5 nm, 15 nm, 23 nm, 50 nm, and 100 nm were deposited on the 5-nm-thick $SiO_2$ layers. The electrical characteristics and sensing properties of each OA membranes were investigated using metal-insulator-semiconductor (MIS) and EIS devices, respectively. As a result, the OA stacked membrane with 23-nm-thick $Al_2O_3$ layer shows the excellent characteristics as a sensing membrane of EIS sensor, which can enhance the signal to noise ratio.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.273-277
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• 2013

A unified potentiostat circuit for both $O_2$- and $H_2O_2$- based electrochemical glucose sensors was proposed and its function was verified by circuit simulations and measurement results of a fabricated chip. This circuit consisted of an operational amplifier, a comparator and current mirrors. The proposed circuit was fabricated with a $0.13{\mu}m$ thick oxide CMOS process and an active area of $360{\mu}m{\times}100{\mu}m$. The measurements revealed an input operation range from 0.5 V to 1.6 V in the $H_2O_2$- based bio-sensor and from 1.7 V to 2.6 V in the $O_2$- based bio-sensor with a supply voltage of 3.3 V. The evaluation results showed that the proposed potentiostat circuit is suitable for measuring the electrochemical cell currents of both $O_2$- and $H_2O_2$- based glucose sensors.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.51-55
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• 2008

In this study, we have figured out exercise time and the amount of burned calories, using a three-axis acceleration sensor which we name as a health sensor. What is more, the health sensor calculates the degree of physical exercise taken during exercise. As is generally known, continuing, regular exercise is far more effective than short time exercise for sustainable health management. The health sensor is, therefore, recommended as an instrument to efficiently carry out the health management. Additionally, the health sensor was applied as an exercise subsidiary system to walking and jumping rope tests. In light of their results, the sensor system was found useful for analyzing the pattern of exercise.

• 반도체디스플레이기술학회지
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• 제17권3호
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• pp.104-107
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• 2018

In this paper, we developed a sensor for monitoring the leakage current through the chassis of the robot. The leakage current sensor needs to be developed because it is a necessary part to prevent electric shock accidents that may occur through the chassis of a robot or an electric vehicle. This leakage monitoring sensor was developed to be mounted directly on the chassis of the robot. This sensor protects the control system from noise by discharging static and high-frequency noise that may occur in the chassis of the robot and monitors the leakage current by measuring the amount of current discharged through the ground. In this paper, a leakage monitoring sensor was developed with a simple structure using resistors, capacitors and OP-AMP, and the performance was evaluated.

• 센서학회지
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• 제30권2호
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• pp.82-87
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• 2021

In this paper, we propose a high-speed, low-power complementary metal-oxide semiconductor (CMOS) binary image sensor featuring a gate/body-tied (GBT) p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET)-type photodetector based on a double-tail comparator. The GBT photodetector forms a structure in which the floating gate (n+ polysilicon) and body of the PMOSFET are tied, and amplifies the photocurrent generated by incident light. The double-tail comparator compares the output signal of a pixel against a reference voltage and returns a binary signal, and it exhibits improved power consumption and processing speed compared with those of a conventional two-stage comparator. The proposed sensor has the advantages of a high signal processing speed and low power consumption. The proposed CMOS binary image sensor was designed and fabricated using a standard 0.18 ㎛ CMOS process.

• 반도체디스플레이기술학회지
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• 제21권4호
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• pp.116-120
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• 2022

In this paper, we developed a paper blood glucose sensor that can minimize the effect of hematocrit. The paper blood glucose sensor has the advantage of being very simple in its production process as it is manufactured with only three printing processes on the top of the paper substrate. This glucose sensor consists of a total of six electrodes, including blood glucose measurement electrodes, hematocrit measurement electrodes, strip detection electrodes, and blood detection electrodes. A paper blood glucose sensor measures hematocrit with electrodes formed on the same sensor substrate when measuring blood glucose concentration, and compensates for the effect of hematocrit in real time to enable accurate blood glucose measurement.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2004년도 International Symposium
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• pp.129-156
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• 2004

• 반도체디스플레이기술학회지
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• 제6권4호
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• pp.43-47
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• 2007

In this paper, we propose a novel sensor system for measuring the arterial pulse in an oral cavity. In order to measure pulse wave in oral cavity, the proposed system is designed with reflection type arterial wave sensor, not by using transmission type arterial pulse wave sensor. Driving circuit through pulse current is designed for solving self-heating problem of LED. The effectiveness of the proposed sensor system is compared with pulse wave between pulse wave of oral cavity and other body parts as well as with characteristic measurements. The experiment shows that the proposed sensor system is adaptive to capturing consecutive and meaningful biometric signals through the variation of pulse wave changes in oral cavity when exercising. The study result expects to design and develop mobile sensors which could be adapted to healthcare devices.

• 센서학회지
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• 제23권2호
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• pp.73-81
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• 2014

Silicon PIN diode radiation sensors and CMOS readout circuits were designed and fabricated in this study. The PIN diodes were fabricated using a 380-${\mu}m$-thick 4-inch n+ Si (111) wafer containing a $2-k{\Omega}{\cdot}cm$ n- thin epitaxial layer. CMOS readout circuits employed the driving and signal processes in a radiation sensor were mixed with digital logic and analog input circuits. The primary functions of readout circuits are amplification of sensor signals and the generation of the alarm signals when radiation events occur. The radiation sensors and CMOS readout circuits were fabricated in the Institute of Semiconductor Fusion Technology (ISFT) semiconductor fabrication facilities located in Kyungpook National University. The performance of the readout circuit combined with the Si PIN diode sensor was demonstrated.

• 반도체디스플레이기술학회지
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• 제11권2호
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• pp.17-21
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• 2012

This study developed a high-temperature, high-pressure dynamic pressure sensor using LGT(lanthanum gallium tantalate). The sensitivity of the fabricated dynamic pressure sensor was 2.1 mV/kPa and its nonlinearity was 2.5%FS. We confirmed that the high-temperature dynamic pressure sensor operated stably in high-temperature environment at $500^{\circ}C$. The developed dynamic pressure sensor using LGT is expected to be applicable not only to gas turbines but also in various industrial areas in duding airplanes and power stations.