• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.67-71
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• 2015

Pulse electroplating was studied to form nanocrystal structure effectively by changing plating current density and duty cycle. When both of plating current density and duty cycle were decreased from $100mA/cm^2$ and 70% to $50mA/cm^2$ and 30%, the P content in the Ni matrix was increased almost up to the composition of $Ni_3P$ compound and the grain growth after annealing was retarded as well. The as-plated hardness values ranging from 660 to 753 HV are mainly based on the formation of nanocrystal structure. On the other hand, the post-anneal hardness values ranging from 898 to 1045 HV, which are comparable to the hardness of hard Cr, are coming from how competition worked between the precipitation of $Ni_3P$ and the grain coarsening. According to the ANOVA and regression analysis, the plating current density showed more strong effect on nanocrystal size and film hardness than the duty cycle.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.321-324
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• 2013

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.533-534
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• 2012

Colloidal III-V semiconductor nanocrystal quantum dots (NQDs) have attracted attention as they can be applied in various areas such as LED, solar cell, biological imaging, and so on because they have decreased ionic lattices, lager exciton diameter, and reduced toxicity compared with II-VI compounds. However, the study and application of III-V semiconductor nanocrystals is limited by difficulties in control nucleation because the molecular bonds in III-V semiconductors are highly covalent compared to II-VI compounds. There is a need for a method that provides rapid and scalable production of highly quality nanoparticles. We present a new synthetic scheme for the preparation of InP nanocrystal quantum dots using new phosphorus precursor, P(SiMe2tbu)3. InP nanocrystals from 530nm to 600nm have been synthesized via the reaction of In(Ac)3 and new phosphorus precursor in noncoordinating solvent, ODE. This opens the way for the large-scale production of high quality Cd-free nanocrystal quantum dots.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.3
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• pp.79-85
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• 2024

We investigated the crystal structural property and chemical bonding nature of cellulose nanocrystal extracted directly from cotton cellulose using high-pressure homogenizer. The nanowire-like cellulose nanocrystals were randomly distributed in the form of a dense mesh. Based on calculating the interplanar distance of the Bragg-diffracted crystal plane observed through X-ray diffraction (XRD) analysis, it was found that the cellulose nanocrystals formed by high-pressure homogenizer had a monoclinc crystal structure, corresponding to the cellulose Iβ sub-polymorph. Solid-state nuclear magnetic resonance (NMR) analysis for the quantitatively evaluation of the amorphous region in cellulose nanocrystals revealed that the crystallinity index of cellulose nanocrystals was calculated to be 53.06 %. The O/C ratio of the surface of cellulose nanocrystal was estimated to be 0.82. Further analysis showed that chemical bonds of C-C bond or C-H bond, C-O bond, O-C-O bond or C=O bond, and O-C=O bond were the main chemical bonding states of the cellulose nanocrystal surface.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.385-387
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• 2003

We have fabricated a new-type high-brightness phosphor consisting of a sol-gel derived glass with finely dispersed semiconductor nanocrystals. It is possible to obtain visible light of any wavelength with a single UV irradiation. The glass firmly adheres to a glass substrate. Therefore it can easily be used for developing devices.

• Current Optics and Photonics
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• v.3 no.2
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• pp.143-149
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• 2019

Shape ellipticity dependence of the exciton fine energy levels in CdTe and CdSe nanocrystal quantum dots were compared theoretically by considering the crystal structure and the Coulomb interaction of an electron and a hole. While quantum dot ellipticity changes from an oblate to prolate quantum dot via spherical shape, both the fine energy levels and the dipole moment in wurtzite structure of a CdSe quantum dot change linearly for ellipticity. In contrast, CdTe quantum dots were found to show a level crossing between the bright and dark exciton states with a significant change of the dipole moment due to the cubic structure. Shape ellipticity dependence of the optical nonlinearities in CdTe and CdSe nanocrystal quantum dots was also calculated by using semiconductor Bloch equations. For a spherical shape quantum dot, only $1^L$ dominates the optical nonlinearities in a CdSe quantum dot, but both $1^U$ and $0^U$ contribute in a CdTe quantum dot. As excitation pulse area becomes strong (${\sim}{\pi}$), the optical nonlinearities of both CdSe and CdTe quantum dots are mainly governed by absorption saturation. However, in the case of a prolate CdTe quantum dot, the real part of the nonlinear refractive index becomes relatively significant.

• Journal of Integrative Natural Science
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• v.1 no.3
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• pp.250-253
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• 2008

New issues arise as to surface characterization, quantification and interface formation. Surface and interface control of CdSe nanocrystal systems, one of the most studied and useful nanostructures. Semiconductor quantum dots (QDs) have been the subject of much interest for both fundamental reseach and technical applications in recent years, due mainly to their strong size dependent properties and excellent chemical processibility. In this dissertation, the synthesis of CdSe quantum dots were synthesized by pyrolysis of high-temperature organometallic reagents. In order to modify the size and quality of quantum dots, we controlled the growth temperature and the relative amount of precursors to be injected into the coordinating solvent. Moreover, an effective surface passivation of monodisperse nanocrystals was achieved by overcoating them with a higher-band-gap material. Synthesized CdSe quantum dots were studied to evaluate the optical, electronic and structural properties using UV-absorption, and photoluminescence measurement.

• Korean Journal of Materials Research
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• v.18 no.7
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• pp.379-383
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• 2008

We report on the light-emitting diode (LED) characteristics of core-shell CdSe/ZnS nanocrystal quantum dots (QDs) embedded in $TiO_2$thin films on a Si substrate. A simple p-n junction could be formed when nanocrystal QDs on a p-type Si substrate were embedded in ${\sim}5\;nm$ thick $TiO_2$ thin film, which is inherently an n-type semiconductor. The $TiO_2$ thin film was deposited over QDs at $200^{\circ}C$ using plasma-enhanced metallorganic chemical vapor deposition. The LED structure of $TiO_2$/QDs/Si showed typical p-n diode currentvoltage and electroluminescence characteristics. The colloidal core-shell CdSe/ZnS QDs were synthesized via pyrolysis in the range of $220-280^{\circ}C$. Pyrolysis conditions were optimized through systematic studies as functions of synthesis temperature, reaction time, and surfactant amount.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.2
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• pp.68-73
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• 2006

We propose a damascene gate FinFET with Si nanocrystals implemented on bulk silicon wafer for low voltage flash memory device. The use of optimized SRON (Silicon-Rich Oxynitride) process allows a high degree of control of the Si excess in the oxide. The FinFET with Si nanocrystals shows high program/erase (P/E) speed, large $V_{TH}$ shifts over 2.5V at 12V/$10{\mu}s$ for program and -12V/1ms for erase, good retention time, and acceptable endurance characteristics. Si nanocrystal memory with damascene gate FinFET is a solution of gate stack and voltage scaling for future generations of flash memory device. Index Terms-FinFET, Si-nanocrystal, SRON(Si-Rich Oxynitride), flash memory device.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.