• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.9
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• pp.72-79
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• 1997

The dominant physical process repsonsible for the nonlinear gain is from spectral-hole burning with the time constant fo about 50fs and the contribution to the nonlinea rgain form hot carriers effect is determined to be about 15% of the contribution due to spectral-hole burning. To prove the above results we fit the data of hall and found that hot carriers have a profound effect on their experimental data despite the fact that the magnitude of hot carriers effect is only 15% of spectral-hole burning. We suggest that the experimenta with a pump pulse width of 180 fs is very sensitive in detecting the effect of hot carriers, but is not sensitive in detecting much faster process associated with spectral-hole burning.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.524-526
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• 1999

It is observed that the mode spacing of an cxternal cavity semiconducror laser can be altered dramatically by the insertion of an intracavity etalon. 111e mode spacing is decreased as a function of etalon's reflectivity and this effect is quantitatively explained by an analysis of resonant modes. We abo show that this effect provides a precise and convenient alternative for determining the coating reflectivity of a high reflectivity etalon. talon.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.74-81
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• 2004

We propose a novel scheme to transmit high center frequency RF signals using electroabsorption devices (EADs) as frequency converters at the transmitter and the receiver. In this approach frequency heterodyning is employed for obtaining high center frequency. With the EAD as a detector/mixer at the receiver we demonstrated a smaller conversion loss than that of the conventional modulator/mixer. With EAD as a modulator/mixer at the transmitter and with two heterodyned lasers to generate an optical local oscillator (LO), we demonstrated a large reduction (${\sim}23dB$) in conversion loss, and the transmission is not limited by the optical saturation of the EAD. This transmission scheme has optical single-side-band transmission feature which greatly relieves the fiber dispersion effect.

• Transactions on Electrical and Electronic Materials
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• v.9 no.1
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• pp.24-27
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• 2008

ZnO has intensively attracted interest for the next generation of short wavelength LEDs and semiconductor lasers. However, for the development and application of the devices based on this material, the fabrication of p-type ZnO thin films is pivotal. Generally, the process of preparation of ZnO is unavoidably accompanied by the natural donor ions such as interstitial Zn ions and oxygen vacancy ions that show n-type electrical property and make fabrication of p-type ZnO to be a hard problem. On this study, to realize stable high-quality p-type ZnO thin films, the undoped ZnO thin films were diffused with P in vapor state. The ZnO:P thin films showed high-quality p-type properties electrically and optically.

• Ceramist
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• v.21 no.2
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• pp.59-74
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• 2018

Imaging in the Short Wave Infrared (SWIR) provides several advantages over the visible and near-infrared regions: enhanced image resolution in in foggy or dusty environments, deep tissue penetration, surveillance capabilities with eye-safe lasers, assessment of food quality and safety. Commercially available SWIR imagers are fabricated by integrating expensive epitaxial grown III-V compound semiconductor sensors with Si-based readout integrated circuits(ROIC) by indium bump bonding Infrared image sensors made of solution-processed quantum dots have recently emerged as candidates for next-generation SWIR imagers. They combine ease of processing, tunable optoelectronic properties, facile integration with Si-based ROIC and good performance. Here, we review recent research and development trends of various application fields of SWIR image sensors and nano-materials capable of absorption and emission of SWIR band. With SWIR sensible nano-materials, new type of SWIR image sensor can replace current high price SWIR imagers.

• Electrical & Electronic Materials
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• v.11 no.11
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• pp.28-36
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• 1998

Widely tunable diodes integrated with periodically sampled and chirped DBR(distributed Bragg reflector) and an EA(electroabsorption) modulator are analyzed dynamically using the improved largesinal time-domain model. The tuning characteristics of sampled- and chirped-grating DBR laser diodes are demonstrated theoretically. The results of the simulation agree well with those of the experiment. And the intensity-modulation properties of the laser diodes integrated with an EA modulator are calculated. It is shown that the external modulation has the lower frequency chirp by 1/20 for the same extinction ratio than the direct modulation, and also the short pulse train can be generated using the optical gating of an EA modulator.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.2
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• pp.120-129
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• 1995

A new nethod, namely multi-gain-levering, is proposed to improve FM response of the single frequency semiconductor lasers and applied to 1.55$\mu\textrm{m}$ InGaAsP/InP MGL(multi-gain-levered)-MQW-DFB-LD. This device consists of three sections with different bandgap energy and can be easily realized by selective MOVPE growth. Our analysis based on Green function showed that a flat, red-shifted, high FM efficiency of aove 15GHz/mA can be extected by novel gain-levering scheme.

• Journal of the Optical Society of Korea
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• v.9 no.2
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• pp.39-44
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• 2005

Unlike for the bound states, several different boundary conditions are used for the continuum states above the barrier in semiconductor quantum wells. We employed three boundary conditions, infinite potential barrier boundary condition, periodic boundary condition and scattering boundary condition, and calculated the local number of states, wavefunctions and optical matrix elements for the symmetric and asymmetric quantum wells. We discussed how these quantities are related in the three boundary conditions. We argue that the scattering boundary condition has several advantages over the other two cases. These results would be useful in understanding quantum well lasers and detectors involving continuum states.

• Korean Journal of Optics and Photonics
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• v.6 no.4
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• pp.359-364
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• 1995

A wavelength measurement system has been made using a monochromator and computer interfacing. The spectra of several light emitting diodes and the wavelength characteristics of Fabry-Perot LD and DFB LD have been measured with this system. The results show that this system can be practicalIy used in analyzing the lasing mode and the wavelength characteristics of the semiconductor lasers. asers.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.945-947
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• 2009

We developed a new laser irradiation (BLDA: Blue Multi-Laser-Diode Annealing) system. The system forms the uniform line beam, which is constructed by 48 pieces of semiconductor lasers. This new system has achieved high laser output stability and the highly accurate beam shape by adopting a reliable laser control, the auto-focus control in addition to an original laser photosynthesis technology and the beam homogenizing technology. It was confirmed to crystallize the Si films effectively with good quality.