• Title/Summary/Keyword: Semiconductor lasers

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Design and Fabrication of Holographic Collimating Lens for Semiconductor Laser (반도체 레이저용 홀로그래픽 시준 렌즈 설계 제작)

  • 임용석;곽종훈;최옥식
    • Korean Journal of Optics and Photonics
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    • v.9 no.3
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    • pp.191-198
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    • 1998
  • A method is described to produce off-axis hologram lenses without astigmatism for semiconductor lasers. We fabricated a holographic collimating lens by using dichromated gelatin film with high diffraction efficiency and without astigmatism which makes a collimated off-axis beam of semiconductor laser. We have designed the holographic collimating lens by applying the classical ray-tracing method to holographic diffraction. The elimination of astigmatism is obtained by choosing appropriate angles of recording and reconstruction beams. The hologram is recorded by use of Ar^{+}$ laser (488nm wavelength) and reconstructed by semiconductor laser(670nm wavelength). The physical parameters of recording and reconstruction angles, wavelength, and astigmatism are analytically calculated and experimentally confirmed.

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Fundamental second-order and third-order Nonlinear Distortions in Semiconductor Lasers (반도체 레이저에서의 2차 및 3차 비선형 왜곡의 특성)

  • 이경식;문용수
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.5
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    • pp.18-26
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    • 1994
  • We express fundamental second-order and third- order harmonic distortions and intermodulation distortions in terms of the laser parameters. Compared to the Darcie `s result only limited to the high frequency (f >1GHz), these expression are quite valid in the entire modulation frequency region. It is found that the fundamental nonlinear distortions are strongly effected by the spontaneous emission to lasing mode as well as the gain compresion damping in the low frequency region.

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Analysis of nonlinear gain in modulation characteristics of semiconductor lasers (반도체 레이저의 변조특성에서 비선형 이득에 관한 연구)

  • 엄진섭;김창봉
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.2
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    • pp.93-100
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    • 1998
  • In this paper we analyze the effect of nonlinear gain on laser modulation characteristics applying a small-signal analysis to the rate equation which includes a nonlinear gain term. Also we analyze the resonance frequency and the damping factor which determine laser modulation characteristics, define K factor which is the proportionality factor between resonance frequency and damping factor, and conclude that the decrease in K factor is due to increases in differential gain and no correlation between K factor and nonlinear gain is identified.

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Development of Ophthalmic Semiconductor Diode Laser System Using Cyclophotocoagualation (광응고에 의한 안과용 반도체 레이저 개발)

  • 유영종;김대욱;김상호;안세영
    • Proceedings of the Optical Society of Korea Conference
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    • 2001.08a
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    • pp.160-161
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    • 2001
  • A diode laser system has been developed for the refractory glaucoma therapy. The diode lasers have merits in clinical usage including reduction of beam dispersion, higher absorption such as in melanin pigment, and lower complication in treatment. We present the system specification of laser diodes in 810mm with 3W power, which is delivered into the optical fiber core of 600${\mu}{\textrm}{m}$.

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Particular aspects of drivers for VCSELs operating at multi-Gb/s

  • Kyriakis-Bitzaros, Efstathios D.;Katsafouros, Stavros G.;Halkias, George
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.1
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    • pp.82-86
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    • 2002
  • It is demonstrated that the conventional current-pulse laser drivers are not adequate in driving VCSELs operating at multi-Gb/s speeds. Simulation results, including the bonding parasitics, show that high-performance VCSELs are more efficiently driven using voltage-pulse mode of operation. The optical output power is almost doubled in the voltage-mode of operation, while the total electrical power consumption of the transmitter decreases by 20%.

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

  • Kim, Tae-Yong;Kim, Tae-Ki;Kim, Sang-In;Kim, Sang-Bae
    • ETRI Journal
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    • v.30 no.6
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    • pp.833-843
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    • 2008
  • The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

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Circuit Model for Frequency Modulation Characteristics for Semiconductor Lasers (반도체 레이저의 주파수변조 특성에 대한 등가회로 모델)

  • So, Joon-Ho;Song, Woo-Young;Kim, Sung-Hwan;Hong, Woan-Hue
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.26 no.6
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    • pp.102-107
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    • 1989
  • This paper describes a new circuit modeling technique for the directly frequency modulated semiconductor laser. Especially this model accounts for not only the accounts for not only the carrier density effect but also the temperature effect. The simulation results with this model are compared with published experimental results of sinusoidal frequency modulation in the range from DC to 3 GHz, and show good agreements.

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Passive Optical Network system Using bi-direction SOA (양방향 반도체 광증폭기를 이용한 수동 광통신망 시스템)

  • Choe, Yeong-Bok;Park, Su-Jin
    • Proceedings of the Optical Society of Korea Conference
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    • 2008.02a
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    • pp.293-294
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    • 2008
  • Using bi-direction SOA based Extension system, FTTH can enhance PON system by increasing both the upstream and downstream link budget. This increased link budget can be used to extend the distance, increase the split ratio or both. The bi-direction SOA regenerates signals using all-optical amplification, and is therefore transparent to data rate or protocol. The bi-direction SOA supports legacy as well as future FTTx standards. This is based on SOA's proprietary technology platform for the manufacturing of advanced discrete photonics and photonic integrated circuits (PICs). Because the bi-direction SOA uses the same InP semiconductor technology used in virtually all telecom lasers, it is able to amplify signals at 1310 and 1490 nm, wavelengths not accessible with commercial fiber-amplifier (EDFA) technology. Due to the extremely fast response time of the InP semiconductor optical amplifiers inside, the SOA can accommodate both continuous (downstream) and bursty (upstream) traffic.

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Long-term stabilization of optical feedback of a resonant external cavity coupled semiconductor laser (공진형 외부 캐비티 부착 반도체 레이저의 광피드백 장기 안정화)

  • 신철호
    • Korean Journal of Optics and Photonics
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    • v.9 no.2
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    • pp.96-99
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    • 1998
  • In this study, a novel long term stabilization method of optical feedback for the resonant cavity coupled semiconductor lasers is proposed, and its utility was shown experimentally. The proposed method is realized by using the pahse discriminator of optical feedback with high gain. The phase discriminating signal was obtained by the polarization spectroscopic technique using reflection light from the external reflector, which is a confocal Fabry-Perot cavity. Experimental result shows that stable control state can be maintained up to 20 hours. The period can be increased by reducing size of the system and/or fixing position stably of optical parts used, which were arranged on an optical table by using magnetic bases in this experiment. The proposed long-term stabilization method of optical feedack of a resonant external cavity coupled semiconductor laser is very useful for the field of high sensitivity measurement, and for the use in the laboratory level in particular.

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Improvement of Direct-Modulation Performances of Semiconductor Lasers by using Dual-Electrode Structure (이중 전극 구조를 이용한 반도체 레이저의 직접 변조 성능 향상)

  • Sung, Hyuk-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.3
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    • pp.654-659
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    • 2011
  • We propose a novel method to reduce laser chirp and improve modulation performance in semiconductor laser by using dual-electrode structure. Dual-electrode structure is realized by segmenting a electrode on top of gain medium, as was the case of edge emitting laser diode, into electrically isolated two electrodes. By using the proposed structure, we have experimentally achieved a reduction of laser spectral width of 0.23 nm and an improvement of 2.5-dB receiver sensitivity at an 80-km fiber transmission for 10-Gbps NRZ (non-return-to zero) data stream.