• 대한방사선방어학회:학술대회논문집
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• 2010.04a
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• pp.172-173
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• 2010

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.1
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• pp.1-4
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• 2004

This paper presents an investigation of the phase-resolved partial discharge (PD) pattern of PET (Poly Ethylene Telephthalate) films with carbon black particles. The phase-resolved PD pattern and statistical parameter from PET samples according to the number of included semiconductor particles were measured. The measurement system consisted of a conventional PD detector using a digital signal processing technique. The partial discharge patterns of the PET films that include the semiconductor particles were investigated to simulate an actual situation that may exist in the cable. In addition, difference of PD patterns between semiconducting particles in PET films and artificial voids was studied. The relationship between the numbers of semiconductor particles in PET films was discussed through the difference of Ψ-q-n distribution and statistical analysis.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.5
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• pp.61-66
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• 1997

In this paper we report the fabrication of an InGaAs metal-semiconductor-metal (MSM) photodiode(PD) which an InAlAs barrier enhancement layer that has very low dark current and high speed chracteristics. The detector using Cr/Au schottky metal fingers with 4um spacing on a large active area of 300*300um$^{2}$ offers a low dark current of 38nA at 10V, a low capacitance of 0.8pF, and a high 3-dB bandwidth of 2.4 GHz. To our knowledge, these characteristics are better than any previously published results obtained from large area InGaAs MSM PD's. The RC equivalent model and frequency domain current response model considering transit time were also used to analyze the frequency characteristic of the fabricated device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.7
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• pp.97-103
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• 2002

In this paper, a Logarithmic Video Amplifier(LVA) for radar system or satellite communications is described. The proposed LVA is composed of a input stage, amplification stage, and output stage. As well as a novel series-parallel architecture is proposed for the purpose of wide dynamic range and high speed operation, a newly developed input stage is designed in order to control the voltage level between LVA and detector diode. The LVA is fabricated with a 1.5um 2-poly 2-metal n-well Bi-CMOS technology, and the chip area is 1310 um x 1540 um. From the experimental results, it consumes 190 mW at 10V power supply, the chip has 60 dB dynamic range and 100ns falling time.

• Journal of Semiconductor Engineering
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• v.2 no.3
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• pp.136-141
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• 2021

This paper analyzes the tree expansion for multiple-input multiple-output (MIMO) detection in the viewpoint of hardware implementation. The tree expansion is to calculate path metrics of child nodes performed in every visit to a node while traversing the detection tree. Accordingly, the tree-expansion unit (TEU), which is responsible for such a task, has been an essential component in a MIMO detector. Despite the paramount importance, the analyses on the TEUs in the literature are not thorough enough. Accordingly, we further investigate the hardware complexity of the TEUs to suggest a guideline for selection. In this paper, we focus on a pair of major ways to implement the TEU: 1) a full parallel realization; 2) a transformation of the formulae followed by common subexpression elimination (CSE). For a logical comparison, the numbers of multipliers and adders are first enumerated. To evaluate them in a more practical manner, the TEUs are implemented in a 65-nm CMOS process, and their propagation delays, gate counts, and power consumptions were measured explicitly. Considering the target specification of a MIMO system and the implementation results comprehensively, one can choose which architecture to adopt in realizing a detector.

• Nuclear Engineering and Technology
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• v.55 no.10
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• pp.3844-3853
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• 2023

Although radiation and chemotherapy methods for cancer therapy have advanced significantly, surgical resection is still recommended for most cancers. Therefore, intraoperative imaging studies have emerged as a surgical tool for identifying tumor margins. Intraoperative imaging has been examined using conventional imaging devices, such as optical near-infrared probes, gamma probes, and ultrasound devices. However, each modality has its limitations, such as depth penetration and spatial resolution. To overcome these limitations, hybrid imaging modalities and tracer studies are being developed. In a previous study, a multi-modal laparoscope with silicon photo-multiplier (SiPM)-based gamma detection acquired a 1 s interval gamma image. However, improvements in the near-infrared fluorophore (NIRF) signal intensity and gamma image central defects are needed to further evaluate the usefulness of multi-modal systems. In this study, an attempt was made to change the NIRF image acquisition method and the SiPM-based gamma detector to improve the source detection ability and reduce the image acquisition time. The performance of the multi-modal system using a complementary metal oxide semiconductor and modified SiPM gamma detector was evaluated in a phantom test. In future studies, a multi-modal system will be further optimized for pilot preclinical studies.

• Journal of the Korea Safety Management & Science
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• v.25 no.4
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• pp.87-94
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• 2023

This study analyzed and identified various causes of caustic alarms of 163 fire detectors that occurred from January 2019 to December 2021 at domestic semiconductor manufacturing plants equipped with about 30,000 fire detectors, and proposed a new non-fire prevention cause investigation plan by applying the NFPA 921 scientific methodology. The results of the study are as follows. First, in terms of necessary recognition and problem definition, an analog detector and an integrated monitoring system were proposed to quickly determine the location and installation space information of the fire detector. Second, in order to prevent speculative causes and errors in various analyses in terms of data analysis and hypothesis establishment, non-fire reports were classified into five by factor and defined, and the causes of occurrence by factor were classified and proposed. Finally, in terms of hypothesis verification and final hypothesis selection, a non-fire prevention improvement termination process and a final hypothesis verification sheet were proposed to prevent the cause from causing re-error.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.3
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• pp.1-9
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• 1995

In the B-ISDN using satellite between geo-satellites and earth stations, the laser having high security and broad band width has to be used as a carrier for transmitting massive information of visual, vocal, and high rate data. In this paper, by computer simulation we analyzed the number of optical detector array of optical satellite communication downlink in case of using channel coding and no channel coding for BISDN between geo-satelites and earth stations under clear weather condition. It was supposed that 1 watt semiconductor laser was used and as modulation method, the binary FSK was used. The data rate of 10Gbps was used for B-ISDN. Also, hardly affected by atmospheric absorption 1.55$\mu$m wave-length was used to reduce influence of dispersion and chirp generated at a high speed transmission. We analyzed the received power, SNR and BER. The number of optical detector array was determined to satisfy for the BER less than 10$^{-7}$. Also, we ananlyzed the possibility of reducting the number of optical detector array in case of using channel coding. the number of optical detector array is one in the region where the elevation nangle is between 38$^{\circ}$ and 90$^{\circ}$ and two where the elevation angle is between 33$^{\circ}$ and 37$^{\circ}$ and three where the elevation angle is between 30$^{\circ}$ and 32$^{\circ}$ and increases per one as the elevation angle decreases per 1.deg.. So in the region where the elevation angle is 25$^{\circ}$, the number of optical detector arrays is eight. In case of using channel coding, the number of optical detector arrays decreases to five in the region where the elevation angle is 25$^{\circ}$. Therefore, we remaark the advantage of the channelcoding to decrease the size of received antenna and the number ob optical detector arrays.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.32-32
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• 2008

X-ray detector는 의료용, 산업용 등 다양한 분야에서 사용되어지고 있으며 기존의 Analog X-ray 방식의 환경오염, 저장공간 부족, 실시간 분석의 어려움 등의 문제점들을 해결하기 위하여 Digital X-ray로의 전환과 연구가 활발하며 이에 따른 관심도 높아지고 있는 살점이다. Digital X-ray detector는 p-영역과 n-영역 사이에 아무런 불순물을 도핑하지 않은 진성반도체(intrinsic semiconductor) 층을 접합시킨 이종접합 PIN 구조의 photodiode 이다. 이 소자는 역바이어스를 가해주면 p영역과 n영역 사이에서 캐리어 (carrier)가 존재하지 않는 공핍 영역이 발생하게 된다. 이런 공핍 영역에서 광흡수가 일어나면, 전자-정공 쌍이 발생한다. 그리고, 발생한 전자-정공 쌍에 전압이 역방향으로 인가되는 경우, 전자는 양의 전극으로 이동하고, 정공은 음의 전극으로 이동한다. 이와 같이, 발생한 캐리어들을 검출하여 전기적인 신호로 변환 시킨다. 고해상도의 Digital X-ray detector를 만들기 위해서는 누설전류에 의한 noise 감소와 소자의 높은 안정성과 내구성을 위한 높은 breakdown voltage를 가져야 한다. 본 연구에서는 Digital X-ray detector의 leakage current 감소와 breakdown voltage를 높이기 위하여 guradring과 gettering technology를 사용하여 전기적 특성을 분석하였다. 기판으로는 $10k\Omega{\cdot}cm$ resistivity를 갖으며, n-type <111>인 1mm 두께의 4인치 Si wafer를 사용하였다. 그리고 pixel pitch는 $100{\mu}m$이며 active area는 $80{\mu}m{\times}80{\mu}m$인 $32\times32$ array를 형성하여 X-ray를 조사하여 소자의 특성을 평가 하였다.