• 제목/요약/키워드: Semiconductor detector

검색결과 194건 처리시간 0.028초

Fabrication and Evaluation of Spectroscopic Grade Quasi-hemispherical CdZnTe Detector

  • Beomjun Park;Kyungeun Jung;Changsoo Kim
    • Journal of Radiation Protection and Research
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    • 제49권2호
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    • pp.85-90
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    • 2024
  • Background: This study focuses on the fabrication and characterization of quasi-hemispherical Cd0.9Zn0.1Te (CZT) detector for gamma-ray spectroscopy applications, aiming to contribute to advancements in radiation measurement and research. Materials and Methods: A CZT ingot was grown using the vertical Bridgman technique, followed by proper fabrication processes including wafering, polishing, chemical etching, electrode deposition, and passivation. Response properties were evaluated under various external bias voltages using gamma-ray sources such as Co-57, Ba-133, and Cs-137. Results and Discussion: The fabricated quasi-hemispherical CZT detector demonstrated sufficient response properties across a wide range of gamma-ray energies, with sufficient energy resolution and peak distinguishability. Higher external bias voltages led to improved performance in terms of energy resolution and peak shape. However, further improvements in defect properties are necessary to enhance detector performance under low bias conditions. Conclusion: This study underscores the efficacy of quasi-hemispherical CZT detector for gamma-ray spectroscopy, providing valuable insights for enhancing their capabilities in radiation research field.

Multi-Valued Image Entropy Coding for input-width reduction of LCD source drivers

  • Sasaki, Hisashi;Arai, Tooru;Hachiuma, Masayuki;Masuko, Akira;Taguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.149-152
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    • 2004
  • A new joint source channel coding reduces both input-width and average current consumption to transmit image data to LCD source drivers. As a source coding, it is based on entropy coding of differential pulse code modulation scheme, especially using median edge detector of image predictor. As a channel coding, it is not a simple pulse amplitude modulation, but linked by source entropy to reduce average amplitude. Simulation results show 1/4 width is achievable by 16-valued transmission with keeping conventional current consumption (0.36 to 1.3).

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로컬 버퍼 최적화를 통한 병렬 처리 캐니 경계선 검출기의 FPGA 설계 (FPGA Design of a Parallel Canny Edge Detector with Optimized Local Buffers)

  • 민인기;심수현;황승원;김선희
    • 반도체디스플레이기술학회지
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    • 제22권4호
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    • pp.59-65
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    • 2023
  • Edge detection in image processing and computer vision is one of the most fundamental operations. Canny edge detection algorithm has excellent performance and is currently widely used. However, it is difficult to process the algorithm in real-time because the algorithm is complex. In this study, the equations required in the algorithm were simplified to facilitate hardware implementation, and the calculation speed was increased by using a parallel structure. In particular, the size and management of local buffers were selected in consideration of parallel processing and filter size so that data could be processed without bottlenecks. It was designed in verilog and implemented in FPGA to verify operation and performance.

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방사선 영상 장치용 반도체 검출기 (Semiconductor Detectors for Radiation Imaging Applications)

  • 박건식;박종문;윤용선;김보우;강진영
    • 전자통신동향분석
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    • 제22권5호
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    • pp.95-107
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    • 2007
  • X-선 측정 및 영상장치를 포함한 다양한 응용분야에서 방사선에 대한 고해상도의 영상을 얻기 위한 목적으로 반도체 검출기에 대한 개발이 활발히 진행되고 있다. 본 고에서는 방사선 검출을 위해 요구되는 반도체 물질의 주요 특성에 대해서 조사하였다. 또한 반도체를 이용한 플랫 패널(flat panel) 시스템, 픽셀 디텍터(pixel detector)와 스트립 디텍터(strip detector) 등의 혼성형 디텍터(hybrid detector), MAPS와 DEPFET 등의 단일형 픽셀 디텍터(monolithic pixel detector)의 디바이스 동작 원리 및 특성과 국내외 기술 동향에 대하여 살펴보았다.

Design of a 6-bit 500MS/s CMOS A/D Converter with Comparator-based Input Voltage Range Detection Circuit

  • Dae, Si;Yoon, Kwang Sub
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제14권6호
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    • pp.706-711
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    • 2014
  • A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

Sensitivity Variations with pre-irradiation dose to P-type Semi conductor for radiation dosimetry

  • 최태진;김옥배
    • 한국의학물리학회지:의학물리
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    • 제6권1호
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    • pp.49-57
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    • 1995
  • 반도체검출기는 소형 및 방사선에 고감도특성을 갖고 있으나, 고에너지 광자선 및 전자선등의 조사에 의해 손상을 입어 감도저하를 초래하게 되며 계측시 선량재현성을 기대하기어려워진다. 실험대상은 P-형 실리콘 반도체검출기이며 선량율, 김출방향 및 온도 변화에 따른 선량특성이 조사되었고, 선량재현성을 높이기 위해 18 MeV 고에너지전자선으로 3KGy까지 전처리조사하고 광자선 및 전자선의 전처리조사선량에 대한 감도특성변화를 얻었다. 전처리조사가 작은 0.5KGy인 경우, 저선량율과 고선량율하의 단위선량당 감도는 약 35%의 차이를 보였으며 .3KGy인 경우 약 20%의 차이를 보여 전처리선량이 클 수록 감도차는 작아짐을 알수 있다. 실리콘 반도체검출기의 검출방향성은 임의의 조사각에서 최저치와 최대치의 선량차가 약 13%를 나타내었으며, 검출기의 온도의존성은 4도에서 35도까지 거의 선형성을 보였다.

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Anomalous Trajectory Detection in Surveillance Systems Using Pedestrian and Surrounding Information

  • Doan, Trung Nghia;Kim, Sunwoong;Vo, Le Cuong;Lee, Hyuk-Jae
    • IEIE Transactions on Smart Processing and Computing
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    • 제5권4호
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    • pp.256-266
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    • 2016
  • Concurrently detected and annotated abnormal events can have a significant impact on surveillance systems. By considering the specific domain of pedestrian trajectories, this paper presents two main contributions. First, as introduced in much of the work on trajectory-based anomaly detection in the literature, only information about pedestrian paths, such as direction and speed, is considered. Differing from previous work, this paper proposes a framework that deals with additional types of trajectory-based anomalies. These abnormal events take places when a person enters prohibited areas. Those restricted regions are constructed by an online learning algorithm that uses surrounding information, including detected pedestrians and background scenes. Second, a simple data-boosting technique is introduced to overcome a lack of training data; such a problem particularly challenges all previous work, owing to the significantly low frequency of abnormal events. This technique only requires normal trajectories and fundamental information about scenes to increase the amount of training data for both normal and abnormal trajectories. With the increased amount of training data, the conventional abnormal trajectory classifier is able to achieve better prediction accuracy without falling into the over-fitting problem caused by complex learning models. Finally, the proposed framework (which annotates tracks that enter prohibited areas) and a conventional abnormal trajectory detector (using the data-boosting technique) are integrated to form a united detector. Such a detector deals with different types of anomalous trajectories in a hierarchical order. The experimental results show that all proposed detectors can effectively detect anomalous trajectories in the test phase.

개인 선량 측정용 PIN 반도체 검출기 개발에 관한 연구 (A Study on Development of a PIN Semiconductor Detector for Measuring Individual Dose)

  • 이봉재;이완로;강병위;장시영;노승용;채현식
    • Journal of Radiation Protection and Research
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    • 제28권2호
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    • pp.87-95
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    • 2003
  • 반도체 검출기의 p+ 층의 도핑 농도, 열처리에 의한 불순물 재분포와 절단면에서의 guard ring 효과를 전산모사하여 최적의 구조와 공전을 설계하고, MCNP코드로 방사선 반응 특성을 분석하였다. 검출기는 반도체 집적회로 공정에서 설계된 공정변수를 적용하여 격자 방향 <100>, $400{\Omega}cm$, n형, Floating-Zone 실리콘 기판에서 제작되었다. 제작된 검출기의 누설전류 밀도는 $0.7nA/cm^2/100{\mu}m$로서 전기적 특성이 우수한 것으로 나타났으며, Cs-137 감마 선원에 의한 $5mR/h{\sim}25R/h$의 조사선량률 범위에서 방사선 반응 특성은 양호한 선형성을 보였다. 본 연구에서 제안된 공정으로 제작된 PIN 반도체 검출기는 개인선량 측정에 사용될 수 있을 것이다.

Analog Delay Locked Loop with Wide Locking Range

  • Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제1권3호
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    • pp.193-196
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    • 2001
  • For wide locking range, an analog delay locked loop (DLL) was designed with the selective phase inversion scheme and the variable number of delay elements. The number of delay elements was determined adaptively depending on the clock cycle time. During the analog fine locking stage, a self-initializing 3-state phase detector was used to avoid the initial state problem associated with the conventional 3-state phase detector. With these schemes, the locking range of analog DLL was increased by four times compared to the conventional scheme according to the simulation results.

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