• Title/Summary/Keyword: Semiconductor detector

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Multi-Valued Image Entropy Coding for input-width reduction of LCD source drivers

  • Sasaki, Hisashi;Arai, Tooru;Hachiuma, Masayuki;Masuko, Akira;Taguchi, Takashi
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.149-152
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    • 2004
  • A new joint source channel coding reduces both input-width and average current consumption to transmit image data to LCD source drivers. As a source coding, it is based on entropy coding of differential pulse code modulation scheme, especially using median edge detector of image predictor. As a channel coding, it is not a simple pulse amplitude modulation, but linked by source entropy to reduce average amplitude. Simulation results show 1/4 width is achievable by 16-valued transmission with keeping conventional current consumption (0.36 to 1.3).

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FPGA Design of a Parallel Canny Edge Detector with Optimized Local Buffers (로컬 버퍼 최적화를 통한 병렬 처리 캐니 경계선 검출기의 FPGA 설계)

  • Ingi Min;Suhyun Sim;Seungwon Hwang;Sunhee Kim
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.4
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    • pp.59-65
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    • 2023
  • Edge detection in image processing and computer vision is one of the most fundamental operations. Canny edge detection algorithm has excellent performance and is currently widely used. However, it is difficult to process the algorithm in real-time because the algorithm is complex. In this study, the equations required in the algorithm were simplified to facilitate hardware implementation, and the calculation speed was increased by using a parallel structure. In particular, the size and management of local buffers were selected in consideration of parallel processing and filter size so that data could be processed without bottlenecks. It was designed in verilog and implemented in FPGA to verify operation and performance.

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Semiconductor Detectors for Radiation Imaging Applications (방사선 영상 장치용 반도체 검출기)

  • Park, K.S.;Park, J.M.;Yoon, Y.S.;Kim, B.W.;Kang, J.Y.
    • Electronics and Telecommunications Trends
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    • v.22 no.5
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    • pp.95-107
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    • 2007
  • X-선 측정 및 영상장치를 포함한 다양한 응용분야에서 방사선에 대한 고해상도의 영상을 얻기 위한 목적으로 반도체 검출기에 대한 개발이 활발히 진행되고 있다. 본 고에서는 방사선 검출을 위해 요구되는 반도체 물질의 주요 특성에 대해서 조사하였다. 또한 반도체를 이용한 플랫 패널(flat panel) 시스템, 픽셀 디텍터(pixel detector)와 스트립 디텍터(strip detector) 등의 혼성형 디텍터(hybrid detector), MAPS와 DEPFET 등의 단일형 픽셀 디텍터(monolithic pixel detector)의 디바이스 동작 원리 및 특성과 국내외 기술 동향에 대하여 살펴보았다.

Design of a 6-bit 500MS/s CMOS A/D Converter with Comparator-based Input Voltage Range Detection Circuit

  • Dae, Si;Yoon, Kwang Sub
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.6
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    • pp.706-711
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    • 2014
  • A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82 mW with a single power supply of 1.2V and achieves 4.3 effective number of bits for input frequency up to 1 MHz at 500 MS/s. Therefore it results in 4.6 pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.

Sensitivity Variations with pre-irradiation dose to P-type Semi conductor for radiation dosimetry

  • 최태진;김옥배
    • Progress in Medical Physics
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    • v.6 no.1
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    • pp.49-57
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    • 1995
  • The semiconductor detector has a high sensitive to radiation and a small volume. It has been frequently used in high energy photon and electron beamdosimetry. However, Semiconductor detector are subject to radiation damage in high energy radiation beam which reduces the sensitivity and creat a large discrepancy. In this experiments, P-type semiconductor was irradiated to 18 MeV electron beam with pre-irradiation for reducing the sensitivity for high reproducibility and investigated the dose characteristics against the dose rate variations. The sensitivity per unit dose in small dose rate showed a 35% large different to a large dose rate with pre-irradiation dose for 0.5 KGy and 20% for 3 KGyin this study. The silicon detector has showed a large dependency of beam direction with 13% discrepancy and a linear sensitive as increased temperature.

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Anomalous Trajectory Detection in Surveillance Systems Using Pedestrian and Surrounding Information

  • Doan, Trung Nghia;Kim, Sunwoong;Vo, Le Cuong;Lee, Hyuk-Jae
    • IEIE Transactions on Smart Processing and Computing
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    • v.5 no.4
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    • pp.256-266
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    • 2016
  • Concurrently detected and annotated abnormal events can have a significant impact on surveillance systems. By considering the specific domain of pedestrian trajectories, this paper presents two main contributions. First, as introduced in much of the work on trajectory-based anomaly detection in the literature, only information about pedestrian paths, such as direction and speed, is considered. Differing from previous work, this paper proposes a framework that deals with additional types of trajectory-based anomalies. These abnormal events take places when a person enters prohibited areas. Those restricted regions are constructed by an online learning algorithm that uses surrounding information, including detected pedestrians and background scenes. Second, a simple data-boosting technique is introduced to overcome a lack of training data; such a problem particularly challenges all previous work, owing to the significantly low frequency of abnormal events. This technique only requires normal trajectories and fundamental information about scenes to increase the amount of training data for both normal and abnormal trajectories. With the increased amount of training data, the conventional abnormal trajectory classifier is able to achieve better prediction accuracy without falling into the over-fitting problem caused by complex learning models. Finally, the proposed framework (which annotates tracks that enter prohibited areas) and a conventional abnormal trajectory detector (using the data-boosting technique) are integrated to form a united detector. Such a detector deals with different types of anomalous trajectories in a hierarchical order. The experimental results show that all proposed detectors can effectively detect anomalous trajectories in the test phase.

A Study on Development of a PIN Semiconductor Detector for Measuring Individual Dose (개인 선량 측정용 PIN 반도체 검출기 개발에 관한 연구)

  • Lee, B.J.;Lee, W.N.;Khang, B.O.;Chang, S.Y.;Rho, S.R.;Chae, H.S.
    • Journal of Radiation Protection and Research
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    • v.28 no.2
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    • pp.87-95
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    • 2003
  • The fabrication process and the structure of PIN semiconductor detectors have been designed optimally by simulation for doping concentration and width of p+ layer, impurities re-contribution due to annealing and the current distribution due to guard ring at the sliced edges. The characteristics to radiation response has been also simulated in terms of Monte Carlo Method. The device has been fabricated on n type, $400\;{\Omega}cm$, orientation <100>, Floating-Zone silicon wafer using the simulation results. The leakage current density of $0.7nA/cm^2/100{\mu}m$ is achieved by this process. The good linearity of radiation response to Cs-137 was kept within the exposure ranges between 5 mR/h and 25 R/h. This proposed process could be applied for fabricating a PIN semiconductor detector for measuring individual dose.

Analog Delay Locked Loop with Wide Locking Range

  • Yoo, Changsik
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.3
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    • pp.193-196
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    • 2001
  • For wide locking range, an analog delay locked loop (DLL) was designed with the selective phase inversion scheme and the variable number of delay elements. The number of delay elements was determined adaptively depending on the clock cycle time. During the analog fine locking stage, a self-initializing 3-state phase detector was used to avoid the initial state problem associated with the conventional 3-state phase detector. With these schemes, the locking range of analog DLL was increased by four times compared to the conventional scheme according to the simulation results.

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Optimization of airborne alpha beta detection system modeling using MCNP simulation

  • Sung, Si Hyeong;Kim, Hee Reyoung
    • Nuclear Engineering and Technology
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    • v.52 no.4
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    • pp.841-845
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    • 2020
  • An airborne alpha beta detection system using passivated implanted planar silicon (PIPS) detector was modeled with the MCNP6 code and its resolution and detection efficiency were analyzed. Simulation of the resolution performed using the Gaussian energy broadening (GEB) function showed that the full width at half maximum (FWHM) of 35.214 keV for alpha particles was within 34-38 KeV, which is the FWHM range of the actual detector, and the FWHM of 15.1 keV for beta particles was constructed with a similar model to 17 keV, which is the FWHM range of an actual detector. In addition, the detection efficiency and the resolution were simulated according to the distance between the detector and the air filter. When the distance was decreased to 0.2 cm from 0.8 cm, the efficiency of the alpha and beta particles detection decreased from 5.33% to 4.89% and from 5.64% to 4.27%, respectively, and the FWHM of the alpha and beta particles improved from 40.9 KeV to 29.84 keV and 25.76 keV-13.27 keV, respectively.