• Title/Summary/Keyword: Semiconductor Testing

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Nondestructive Advanced Indentation Technique: The Application Study Industrial Structure to Nanomaterial (비파괴적 연속압입시험: 대형구조물로부터 nano소재까지의 응용연구)

  • Jeon, Eun-Chae;Kwon, Dong-Il;Choi, Yeol;Jang, Jae-Il
    • Journal of the Korean Society for Nondestructive Testing
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    • v.22 no.4
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    • pp.333-346
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    • 2002
  • The continuous indentation techniques are one of the most effective methods to nondestructively estimate mechanical properties. There are many applications in various dimensions of materials from macro-scale, through micro-scale, even to nano-scale range. The macro-range technology of kgf-load level is now focused on the evaluation of tensile properties and residual stress of bulk materials, for example, used in conventional load-bearing structures and in-use pipelines. The technology and the apparatus were successfully developed by a domestic research group. The micro-range technology of gf-load level can be applied to investigate some property-gradient materials such as weldment. Because it has better spatial resolution than the macro-range technology. The nano-range technology (called nanoindentation technique) of mgf-load level is basically used to evaluate hardness and modulus of micro- and nano-materials. Moreover, many researches are going on to measure tensile properties and residual stress. The nanoindentation technology is easy to be applied to the various fields, such as semiconductor devices, multiphase materials, and biomaterials, though other methods are too difficult to be applied due to dimensional or environmental limitations. On the basis of these accomplishments, the international and the domestic standards are being established.

Evaluation of Adhesive Strength for Nano-Structured Thin Film by Scanning Acoustic Microscope (초음파 현미경을 이용한 나노 박막의 접합 강도 평가)

  • Park, Tae-Sung;Kwak, Dong-Ryul;Park, Ik-Keun;Miyasaka, Chiaki
    • Journal of the Korean Society for Nondestructive Testing
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    • v.32 no.4
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    • pp.393-400
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    • 2012
  • In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.

Precise Estimation of Nonlinear Parameter in Pulse-Like Ultrasonic Signal (펄스형 초음파 신호에서 비선형 파라미터의 정밀 추정)

  • Ha, Job;Jhang, Kyung-Young;Sasaki, Kimio;Tanaka, Hiroaki
    • Journal of the Korean Society for Nondestructive Testing
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    • v.26 no.2
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    • pp.77-83
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    • 2006
  • Ultrasonic nonlinearity has been considered as a solution for the detection of microcracks or interfacial delamination in a layered structure. The distinguished phenomenon in nonlinear ultrasonics is the generation of higher-order harmonic waves during the propagation. Therefore, in order to quantify the nonlinearity, the conventional method measures a parameter defined as the amplitude ratio of a second-order harmonic component and a fundamental frequency component included in the propagated ultrasonic wave signal. However, its application In field inspection is not easy at the present stage because no standard methodology has yet been made to accurately estimate this parameter. Thus, the aim of this paper is to propose an advanced signal processing technique for the precise estimation of a nonlinear ultrasonic parameter, which is based on power spectral and bispectral analysis. The method of estimating power spectrum and bispectrum of the pulse-like ultrasonic wave signal used in the commercial SAM (scanning acoustic microscopy) equipment is especially considered in this study The usefulness of the proposed method Is confirmed by experiments for a Newton ring with a continuous air gap between two glasses and a real semiconductor sample with local delaminations. The results show that the nonlinear parameter obtained tv the proposed method had a good correlation with the delamination.

Analysis of Acoustic Reflectors for SAW Temperature Sensor and Wireless Measurement of Temperature (SAW 온도센서용 음향 반사판 분석 및 무선 온도 측정)

  • Kim, Ki-Bok;Kim, Seong-Hoon;Jeong, Jae-Kee;Shin, Beom-Soo
    • Journal of the Korean Society for Nondestructive Testing
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    • v.33 no.1
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    • pp.54-62
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    • 2013
  • In this study, a wireless and non-power SAW (surface acoustic wave) temperature sensor was developed. The single inter-digital transducer (IDT) of SAW temperature sensor of which resonance frequency is 434 MHz was fabricated on $128^{\circ}$ rot-X $LiNbO_3$ piezoelectric substrate by semiconductor processing technology. To find optimal acoustic reflector for SAW temperature sensor, various kinds of acoustic reflectors were fabricated and their reflection characteristics were analyzed. The IDT type acoustic reflector showed better reflection characteristic than other reflectors. The wireless temperature sensing system consisting of SAW temperature sensor with dipole antenna and a microprocessor based control circuit with dipole antenna for transmitting signal to activate the SAW temperature sensor and receiving the signal from SAW temperature sensor was developed. The result with wireless SAW temperature sensing system showed that the frequency of SAW temperature sensor was linearly decreased with the increase of temperature in the range of 40 to $80^{\circ}C$ and the developed wireless SAW temperature sensing system showed the excellent performance with the coefficient of determination of 0.99.

Electrical response of tungsten diselenide to the adsorption of trinitrotoluene molecules (폭발물 감지 시스템 개발을 위한 TNT 분자 흡착에 대한 WSe2 소자의 전기적 반응 특성 평가)

  • Chan Hwi Kim;Suyeon Cho;Hyeongtae Kim;Won Joo Lee;Jun Hong Park
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.33 no.6
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    • pp.255-260
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    • 2023
  • As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe2 semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe2 was synthesized using thermal chemical vapor deposition, and afterward, WSe2 FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe2 crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe2 surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

A Position Control System of SRM using Digital Hysteresis Controller (디지털 히스테리시스 제어기를 이용한 SRM의 위치제어시스템)

  • 김민회;백원식;김남훈;최경호;김동희
    • The Transactions of the Korean Institute of Power Electronics
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    • v.7 no.3
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    • pp.253-261
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    • 2002
  • This paper presents an implementation of position control system of Switched Reluctance Motor (SRM) using digital hysteresis controller by TMS320F740 DSP. Although SRM possess several advantages including simple structure and high efficiency, but the control thrive system using power semiconductor device is required to drive this motor. The control drive system increases overall system cost. To overcome this problem and increase the application of SRM, it is needed to develope the servo dave system of SRM. So, the position control system of 1 Hp SRM is developed and evacuated by adaptive switching angle control. The position/speed response characteristics and voltage/current waveforms are presented to prove the capability of SRM for a servo drive application. Moreover, digital hysteresis current controller is developed and evaluated by experimental testing for the purpose of system developmental cost reduction.

A Feasibility Study on the Research Infrastructure Project of System Semi-Conductor Industry (시스템 반도체산업 기반조성사업의 타당성 분석 연구)

  • Kim, Dae Ho
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.9 no.2
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    • pp.87-95
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    • 2014
  • The High-price development & testing tools and IP infratstructures are required for the development of system semi-conductors, but SMEs have not ability to prepare for them. Recently in terms of the miniaturization and the advancement of semiconductor process, the cost of the semi-conductor development have shown the rising tendency and the market-based design tools used are requied to be upgraded due to the advancement in the environment and technology. On the contray, many other contries such as Taiwan, Japan, China, and User are supporting this system semi-conductor industry. Korean government is trying to build the research infrastructure for system semi-conductor industry that aims to reduce the costs of the design infrastructure investment, to support the companies of system semi-conductor development and to incubate the fab-less start-ups. This study analyzes the feasibility of the project, by using the AHP analysis and the results shows that this project is considered feasible because the AHP overall score is evaluated as 0.840, the overall score is greater than or equal to 0.55.

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A Novel Test Structure for Process Control Monitor for Un-Cooled Bolometer Area Array Detector Technology

  • Saxena, R.S.;Bhan, R.K.;Jalwania, C.R.;Lomash, S.K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.6 no.4
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    • pp.299-312
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    • 2006
  • This paper presents the results of a novel test structure for process control monitor for uncooled IR detector technology of microbolometer arrays. The proposed test structure is based on resistive network configuration. The theoretical model for resistance of this network has been developed using 'Compensation' and 'Superposition' network theorems. The theoretical results of proposed resistive network have been verified by wired hardware testing as well as using an actual 16x16 networked bolometer array. The proposed structure uses simple two-level metal process and is easy to integrate with standard CMOS process line. The proposed structure can imitate the performance of actual fabricated version of area array closely and it uses only 32 pins instead of 512 using conventional method for a $16{\times}16$ array. Further, it has been demonstrated that the defective or faulty elements can be identified vividly using extraction matrix, whose values are quite similar(within the error of 0.1%), which verifies the algorithm in small variation case(${\sim}1%$ variation). For example, an element, intentionally damaged electrically, has been shown to have the difference magnitude much higher than rest of the elements(1.45 a.u. as compared to ${\sim}$ 0.25 a.u. of others), confirming that it is defective. Further, for the devices having non-uniformity ${\leq}$ 10%, both the actual non-uniformity and faults are predicted well. Finally, using our analysis, we have been able to grade(pass or fail) 60 actual devices based on quantitative estimation of non-uniformity ranging from < 5% to > 20%. Additionally, we have been able to identify the number of bad elements ranging from 0 to > 15 in above devices.

Implementation of ATE to Maintain Pre-Amplifier of Thermal Imaging System (열상장비 전단증폭부 정비용 ATE의 구현)

  • Park, Jai-Hyo;Kim, Han-Kyung
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.49 no.1
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    • pp.80-87
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    • 2012
  • We have developed the ATE(Automatic Test Equipment) system for the performance test of pre-amplifier of thermal imaging devices. The device regenerates the electronic signals of photon detection module which is normally in weak energy, for the image signals processing. Previous ATE system was primarily and actively developed in the field of semiconductor devices quality parts inspection. Recently, it has been studied in the field of performance testing of equipment. In the field of thermal performance test equipment, however, it lacks the study of ATE compared to other areas, which causes the maintenance related to the core of military thermal imaging system maintenance to be limited. In this paper, a new study of ATE in the field of thermal imaging system is done. It is designed to be used universally for the ATE system with different types of circuit card of thermal imaging system by adopting matrix relays. Using the developed ATE measuring the pre-amplifier amplitude, an average amplified amplitude of 2.71Vpp was measured which confirms that it is within the range of theoretical analysis and also verifies the good performance of the developed ATE.

Study of complex electrodeposited thin film with multi-layer graphene-coated metal nanoparticles

  • Cho, Young-Lae;Lee, Jung-woo;Park, Chan;Song, Young-il;Suh, Su-Jeong
    • Carbon letters
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    • v.21
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    • pp.68-73
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    • 2017
  • We have demonstrated the production of thin films containing multilayer graphene-coated copper nanoparticles (MGCNs) by a commercial electrodeposition method. The MGCNs were produced by electrical wire explosion, an easily applied technique for creating hybrid metal nanoparticles. The nanoparticles had average diameters of 10-120 nm and quasi-spherical morphologies. We made a complex-electrodeposited copper thin film (CETF) with a thickness of $4.8{\mu}m$ by adding 300 ppm MGCNs to the electrolyte solution and performing electrodeposition. We measured the electric properties and performed corrosion testing of the CETF. Raman spectroscopy was used to measure the bonding characteristics and estimate the number of layers in the graphene films. The resistivity of the bare-electrodeposited copper thin film (BETF) was $2.092{\times}10^{-6}{\Omega}{\cdot}cm$, and the resistivity of the CETF after the addition of 300 ppm MGCNs was decreased by 2% to ${\sim}2.049{\times}10^{-6}{\Omega}{\cdot}cm$. The corrosion resistance of the BETF was $9.306{\Omega}$, while that of the CETF was increased to 20.04 Ω. Therefore, the CETF with MGCNs can be used in interconnection circuits for printed circuit boards or semiconductor devices on the basis of its low resistivity and high corrosion resistance.