• Journal of IKEEE
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• v.11 no.3
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• pp.117-121
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• 2007

20 GHz and 40 GHz micro/millimeter-wave photonic pulse trains have been generated from a fiber ring laser with a semiconductor optical amplifier (SOA) by injecting 2 GHz gain-switched Fabry-Perot laser diode (GS-FPLD) output. To achieve efficient cross-gain modulation in the SOA at 20 GHz and 40 GHz, individual lasing modes of the 2 GHz GS-FPLD output separated to 25 and 50 picoseconds respectively by passing dispersion compensating fibers.

• 제어로봇시스템학회:학술대회논문집
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• 1990.10b
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• pp.1021-1026
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• 1990

Accuracy improvement of a self-mixing semiconductor laser range finder is predicted by simulation, in which the laser modulation current is reshaped to give an ideal triangular waveform of the optical frequency change. The maximum range measurement error of less than 0.1% in a wide range of O.1m to 1m is expected by the reshaping of the modulation current. Experimental verification of the effect of current reshaping on the linearization of the derivative of the optical frequency change curve is given.

• Korean Journal of Optics and Photonics
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• v.2 no.2
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• pp.67-73
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• 1991

The unsaturated signal gain, signal gain bandwidth, and saturation power which are important parameters determining characteristics of the semiconductor laser amplifier were measured for an AlGaAs Fabry-Perot cavity type laser amplifier and compared with the results of Fabry-Perot formula. The unsaturated signal gain 25 dB is obtained near oscillation thereshold current at $0.7\mu\textrmW$ input power. The corresponding signal gain bandwidth was about 3 GHz. Also. We measured the variation of the saturation signal gain and saturation power.

• Journal of the Optical Society of Korea
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• v.12 no.4
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• pp.359-363
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• 2008

A novel WDM-PON system delivering bidirectional 1.25-Gbps data and broadcasting data is proposed. A subcarrier signal modulates optical carriers of a Fabry-Perot-laser-diode based broadband light source to broadcast to all users. Reflective semiconductor optical amplifiers are used as modulators for the baseband data at both the optical line terminal and the remote optical network unit for a channel. Bit error rate and error vector magnitude were measured to demonstrate the proposed scheme.

• Proceedings of the Korean Vacuum Society Conference
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• 1996.06a
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• pp.29-30
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• 1996

• Laser Solutions
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• v.11 no.1
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• pp.12-18
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• 2008

Laser micromachining is a promising technique to fabricate the micro-scale devices. However, there remains important challenges to reducethe redeposition of ablated materials around the laser irradiated zone and to get a smooth surface, especially for metal and semiconductor materials. To achieve the high-quality micromachined devices, various methods have been developed. Liquid-assisted micromachining can be a good solution to overcome the previously mentioned problems. During the laser ablation process, the liquid around the solid sample dramatically changes the ablation characteristics, such as ablation rate, surface profile, formation of debris, and so on. In this investigation, we conducted the laser micromachining of Si in various liquid environmental conditions, such as liquid types, liquid thickness. In addition, using nanoscale time-resolved shadowgraphy technique, we observed the ablation process in liquid environments to understand the mechanism of liquid-assisted laser micromachining.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.369-374
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• 2004

In this paper, we propose a new tunable laser diode structure. The laser diode consists of a sampled-grating distributed feedback laser diode monolithically integrated with a sampled-grating distributed-Brags-Reflector. For a specific design, the possibility of continuous/discrete wavelength tuning over 27nm is confirmed by a numerical analysis using a split-step time domain model. Because the laser diode can be directly coupled with optical fiber without the intervention of the passive section, the laser diode exhibits higher output power than the conventional laser diode.

• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.327-329
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• 2006

In this paper, the cutting qualities by laser dicing and fracture strength of a silicon die is investigated. Laser micromachining is the non-contact process using thermal ablation and evaporation mechanisms. By these mechanisms, debris is generated and stick on the surface of wafer, which is the problem to apply laser dicing to semiconductor manufacture process. Unlike mechanical sawing using diamond blade, chipping on the surface and crack on the back side of wafer isn't made by laser dicing. Die strength by laser dicing is measured via the three-point bend test and is compared with the die strength by mechanical sawing. As a results, die strength by laser dicing shows a decrease of 50% in compared with die strength by mechanical sawing.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.945-947
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• 2009

We developed a new laser irradiation (BLDA: Blue Multi-Laser-Diode Annealing) system. The system forms the uniform line beam, which is constructed by 48 pieces of semiconductor lasers. This new system has achieved high laser output stability and the highly accurate beam shape by adopting a reliable laser control, the auto-focus control in addition to an original laser photosynthesis technology and the beam homogenizing technology. It was confirmed to crystallize the Si films effectively with good quality.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.05a
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• pp.673-674
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• 2012