• 한국표면공학회지
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• 제32권3호
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• pp.244-248
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• 1999

Photoelectrodeposition of copper on semiconductive B-doped diamond films was investigated. There are cleasr morphology differences between photodeposited copper and electrodeposited copper. Photoelecrodeposition proceeded as uniform 2-dimensional growth. On the other hand electrodeposition proceeded as scarce random deposition. By applying this effect we have succeeded in forming a conductive pattern on semiconductive B-doped diamond with the aid of a photo-mask. And it was suggested that the surface reforming caused by photoelectrochemical process could be easily detected by the following metal (copper) deosition method, which is demonstrated as 'Diamond photographic phenomenon'.

• Bulletin of the Korean Chemical Society
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• 제12권1호
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• pp.13-17
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• 1991

The preparation and characterization of semiconductive electrodes of MgO doped $Fe_2O_3$ were investigated. Pellets of MgO doped $Fe_2O_3$ were sintered at high temperatures between 1300$^{\circ}$C and 1400$^{\circ}$C and quenched rapidly in distilled water. The surfaces were analyzed by X-ray diffraction and scanning Auger electron spectroscopy. The surfaces of pellets contained both corundum structure ($Fe_2O_3$) and spinel structure ($Mg_xFe_{3-x}O_4$). Electrodes made of this material gave comparable anodic and cathodic photocurrents under illumination. The cathodic and anodic photocurrent on these photoelectrodes were verified high at 5-10 wt. percent that is critical doping amounts.

• 한국세라믹학회지
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• 제34권1호
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• pp.23-30
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• 1997

SrCO3 TiO2, 그리고 Nb2O5를 출발원료로 하여 환원분위기하에서 반도성 SrTiO3 소결첼르 제조하였다. 반도성 다결정 소결체 내에서 acceptor 역할을 할 수 있는 Na과 K 이온을 입계를 따라 80$0^{\circ}C$~120$0^{\circ}C$ 온도범위에서 확산시킨 후, 열처리조건에 따른 입계의 전기적 화학적 특성을 고찰하였다. 이차열처리한 소결체의 입계에는 일정한 전기적 포텐셜장벽과 이에 상관된 전자고갈영역이 형성되어 비선형적인 전류-전압 특성을 보이고 문턱전압(threshold voltage)은 10~70V, 입계포텐셜장벽은 0.1~2eV의 크기를 나타내었다. Na과 K 이온은 입계로부터 입자내부로 확산하여 20~50 nm 깊이의 확산층을 형성하며, 이들 확산층에서 Na 또는 K과의 치환에 기인하여 Sr농도가 감소하였으며 치환에 따른 전기적 중성유지를 위하여 산소 vacancy 농도가 증가하였다.

• Composites Research
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• 제29권3호
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• pp.98-103
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• 2016

본 연구에서는 반도체 섬유 강화 복합재료를 이용하여 전자파 흡수 구조를 제작하였다. 두 종류의 반도체 섬유를 사용하여 복합재료를 제작하고, 자유공간 측정 장비를 이용하여 각각의 전자기적 물성을 측정하였다. 두께 최적화 방법으로 두 종류의 단층형 흡수 구조와 한 종류의 이층형 흡수 구조를 설계하였다. 설계한 전자파 흡수 구조를 반도체 섬유 강화 복합재료로 제작하고 그 흡수 성능을 측정하였다. 사용된 두 재료의 유전율은 Cole-Cole plot에 나타내었을 때 무반사 곡선에 가깝지 못하여 높은 흡수 성능을 기대하기 어려웠다. 두 종류의 재료로 제작한 단층형 흡수 구조는 10 GHz 근처에서 각각 -14.2 dB와 -8.8 dB의 흡수 성능을 보였다. 이러한 한계점을 보완할 수 있는 이층형 전자파 흡수 구조는 10 GHz 근처에서 -43.9 dB의 좋은 흡수 성능을 보였다. 반도체 섬유 강화 복합재료로 제작한 이층형 전자파 흡수 구조는 기존의 전자파 흡수 구조에 비해 간단한 제작 과정을 거쳐 좋은 흡수 성능을 갖는 흡수 구조를 얻을 수 있었으며, 상대적으로 더 적은 오차 요인을 갖고 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.489-494
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• 2004

In this paper, we investigated impurities content and thermal properties showing by changing the content of carbon black which is semiconductive materials for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Impurities content of specimens was measured by ICP-AES(Inductively Coupled Plasma Atomic Emission Spectrometer), and density of specimens were measured by density meter. And then heat capacity(${\Delta}H$) and melting temperature(Tm), specific heat(Cp) were measured by DSC(Differential Scanning Calorimetry). The dimension of measurement temperature was $0[^{\circ}C]\;to\;200[^{\circ}C]$, and rising temperature was $4[^{\circ}C/min]$. Impurities content was highly measured according to increasing the content of carbon black from this experimental result also density was increased according to these properties. Specially, impurities content values of the A1 and A2 of existing resins were measured more than 4000[ppm]. Heat capacity, melting temperature, and specific heat from the DSC results were simultaneously decreased according to increasing the content of carbon black. Because metallic impurities of carbon black having Fe, Co, Mn, A1 and Zn are rapidly passed kinetic energy increasing the number of times breaking during the unit time with the near particles according to increasing vibration of particles by the applied heat energy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1986년도 하계학술대회논문집
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• pp.382-384
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• 1986

• 한국재료학회:학술대회논문집
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• 한국재료학회 2001년도 추계 학술발표강연 및 논문개요집
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• pp.129-129
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• 2001

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권12호
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• pp.601-605
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• 2004

In this paper, we investigated ionic impurities and physical properties by change of carbon black content, which is asemiconductive material for underground power transmission. Specimens were made into sheet form with three existing resins and nine specimens for measurement. The ionic impurities of the specimens were measured using anICP-AES (Inductively Coupled Plasma Atomic Emission Spectrometer), and the density of specimens was measured by a density meter. Specific heat (Cp) was then measured using aDSC (Differential Scanning Calorimetry). The ranges of measurement temperature were from 0[$^{\circ}C$] to 200[$^{\circ}C$], and heating temperature was 4[$^{\circ}C$/min]. Ionic impurities were measured to be high according to increases in the content of carbon black from this experimental result and density was also increased according to these properties. In particular, the impurity content values of A1 and A2, and existing resins, were measured at more than 4000[ppm]. Specific heat from the DSC results was lowered according to augmentation in the content of carbon black. The ionic impurities of carbon black containing Fe, Co, Mn, Al and Zn are forms of rapidly passed kinetic energy that increase the number of times breaking occurs during unit time with the near particles according to an increase in the vibration of particles by the applied heat energy.

• Journal of Electrical Engineering and Technology
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• 제3권1호
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• pp.115-120
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• 2008

Use of the carbon nanotube is superior to general powder state materials of mechanical and electrical properties. Because its ratio of diameter and length (aspect ratio) is very large, it has been known as a type of ideal nano-reinforcement material. Based on this advantage, the existing carbon black of semiconductive shield materials used in power cables can acquire excellent properties by using a small amount of carbon nanotubes. Thus, we investigated the thermal properties of the carbon nanotube, such as thermal conductivity, specific heat, and DSC (Differential Scanning Calorimetry). We found that a high thermal resistance level is demonstrated by using a small amount of carbon nanotubes. As a result, this tendency confirms high cross-linking density in a new network in which the carbon nanotube between carbon black constitute molecules shows a bond by similar constructive properties.

• 한국세라믹학회지
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• 제28권4호
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• pp.261-268
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• 1991

The dielectric properties and microstructure of SrTiO3-based grain boundary layer (GBL) capacitor were investigated, and SrTiO3 GBL capacitor was made by penetrating the Frit (PbO-Bi2O3-B2O3 system). The Nb2O5-doped SrTiO3 ceramics were fired for 4-hours, at 145$0^{\circ}C$ in H2-N2 atomsphere to get semiconductive ceramics. The grain size of SrTiO3 sintered at reduction atmosphere had increased as the amount of Nb2O5 increases and then decreased as the amount of Nb2O5 exceeded 0.2 mole%. Insulating reagents which contained PbO-Bi2O3-B2O3 system frit and oxide mixture were printed on the each semiconductive ceramics and fired at varying temperature and for different holding time. The optimum dielectric properties could be obtained by second heat treatment at 110$0^{\circ}C$ for 1 hour, when frit paste was printed. A SrTiO3-based GBLC had the apparent permitivity of about 3.2$\times$104, the dielectric loss of 0.01~0.02 and the stable temperature coefficient of capacitance. The influence of frit paste on dielectric properties was similiar to that of oxide paste but the stability of temperature property of capacitance was improved.