• Journal of the Korean Ceramic Society
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• v.47 no.6
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• pp.623-626
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• 2010

We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.

• Journal of Korean Society for Atmospheric Environment
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• v.19 no.E3
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• pp.129-136
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• 2003

Effects of inorganic aerosols on the kinetics of the hydroxyl radical reactions with selected aliphatic alkanes have been investigated using the relative rate technique. The relative rates in the absence and presence of aerosols were determined for n-butane, n-pentane, n-hexane, n-octane, and n-decane. P-xylene was used as a reference compound. Inorganic aerosols including (NH$_4$)$_2$SO$_4$, NH$_4$NO$_3$, and NaCl aerosols at two different aerosol concentrations that are typical of polluted urban conditions were tested. Total surface areas of aerosols were 1400 (Condition I) and 3400 $\mu$$m^2$ cm$^{-3}$ (Condition II). Significant changes in the relative rates in the presence of the inorganic aerosols were not observed for the n-butanel/$.$OH, n-pentanel/$.$OH, n-hexanel/$.$OH, n-octanel/$.$OH, and n-decanel/$.$OH reactions versus p-xylenel/$.$OH reaction. These results suggest that the promoting effects depend on the semiconducting property of the aerosols and the nature of the organic compounds.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.44 no.12
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• pp.1610-1616
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$(0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere (N$_{2}$ gas). After being fired in a reducing atmosphere, metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100[.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. The results of the capacitance-valtage measurements indicated that the grain boundary was composed of the continuous insulating layers. The capacitance is almost unchanged below about 20[V], but decreased slowly over 20[V]. The conduction mechanism of the specimens observed in the temperature range of 25~125[.deg. C], and is divided into three regions having different mechanism as the current increased: the region I below 200[V/cm] shows the ohmic conduction. The region II between 200[V/cm] and 2000[V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000[V/cm] is dominated by the tunneling effect.ct.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.611-618
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• 1995

The (Sr$_{1-x}$ .Ca$_{x}$)TiO$_{3}$+0.6[mol%]Nb$_{2}$O$_{5}$ (0.05.leq.x.leq.0.2) ceramics were fabricated to form semiconducting ceramics by sintering at about 1350[.deg. C] in a reducing atmosphere(N$_{2}$ gas). Metal oxides, CuO, was painted on the both surface of the specimens to diffuse to the grain boundary. They were annealed at 1100 [.deg. C] for 2 hours. The 2nd phase formed by thermal diffusing from the surface lead to a very high apparent dielectric constant. According to increase of the frequency as a functional of temperature, all specimens used in this study showed the dielectric relaxation, and the relaxation frequency was above 106 [Hz], it move to low frequency with increasing resistivity of grain. The specimens showed three kinds of conduction mechanisms in the temperature range 25-125 [.deg. C] as the current increased: the region I below 200 [V/cm] shows the ohmic conduction. The region rt between 200 [V/cm] and 2000 [V/cm] can be explained by the Poole-Frenkel emission theory, and the region III above 2000 [V/cm] is dominated by the tunneling effect.fect.

• Journal of Powder Materials
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• v.29 no.5
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• pp.376-381
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• 2022

Tungsten disulfide (WS₂) nanosheets have attracted considerable attention because of their unique optical and electrical properties. Several methods for fabrication of WS₂ nanosheets have been developed. However, methods for mass production of high-quality WS₂ nanosheets remain challenging. In this study, WS₂ nanosheets were fabricated using mechano-chemical ball milling based on the synergetic effects of chemical intercalation and mechanical exfoliation. The ball-milling time was set as a variable for the optimized fabricating process of WS₂ nanosheets. Under the optimized conditions, the WS₂ nanosheets had lateral sizes of 500-600 nm with either a monolayer or bilayer. They also exhibited high crystallinity in the 2H semiconducting phase. Thus, the proposed method can be applied to the exfoliation of other transition metal dichalcogenides using suitable chemical intercalants. It can also be used with high-performance WS₂-based photodiodes and transistors used in practical semiconductor applications.

• Progress in Superconductivity and Cryogenics
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• v.21 no.4
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• pp.1-5
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• 2019

We investigated the effect of Fe₃O₄ addition on the critical temperature of (Bi, Pb)-2223 polycrystalline samples. Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_10+δ + x wt. % Fe₃O₄ (x = 0.0, 0.2, 0.4, 0.6, and 0.8) samples were prepared by using a solid-state reaction method. The analysis of X-ray diffraction data indicates that as Fe₃O₄ is added, dominant phase of the sample changes from Bi-2223 to Bi-2212 with an increasing Bi-2201 phase. The transition temperature of the samples drastically decreased with the Fe₃O₄ addition. The resistance data of samples with x = 0.2 and 0.4 showed a double transition indicating a coexistence of Bi-2223 and Bi-2212 phase while the samples with x = 0.6 and 0.8 showed a single transition with a semiconducting behavior. This phase transition may originate from changes in local structure of the Bi-2223 system by Fe₃O₄ addition. Analysis of the pair distribution function of the Cu-O pair in the CuO₂ plane calculated from extended X-ray absorption fine structure data revealed that the oxygen coordination of copper ion changes from CuO₄ planar type (x = 0.0 - 0.4) to CuO₅ pyramidal type (x = 0.6, 0.8). The correlated Debye-Waller factor, providing information on the atomic disorder within the CuO₂ plane, shows an inverse relation to the coordination number. These results indicate that addition of Fe₃O₄ changes the oxygen distribution around Cu in the CuO₂ plane, causing a phase transition from Bi-2223 to more stable Bi-2212/Bi-2201 phases.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.55-61
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• 2002

Ultra-fine particles of $SnO_{2}$ was synthersized by the sol-gel powder processing using tin(II) chloride dihydrate$(SnCl_{2}{\cdot}2H_{2}O)$ and ethanol$(C_{2}H_{5}OH)$ as raw materials. Gel powders can be obtained by drying of sol at $120^{\circ}C$ after aging 72hrs and 168hrs. The amount of $SnO_{2}$ phase was increased with temperature because of the evaporation of volatile components, and the creation of $SnO_{2}$ phase was almost done by the heat treatment at $700^{\circ}C/30min$ The grain sizes after firing are about 20-30nm, and it showed the narrow distribution of grain size. The specimens to measure electrical properties were fabricated by the thick film screen printing technique on the alumina substrates. The conductance of $SnO_{2}$ was increased with temperature up to $380^{\circ}C$ by the typical conduction mechanism of semiconducting ceramics. There was a region of constant conductance between about $200^{\circ}C$ and $380^{\circ}C$ due to the increment of electron concentration with temperature and the annihilation of conduction carriers by the absorption and electron trapped-ionization of oxygen on the surface of $SnO_{2}$, It was finally showed the intrinsic behaviors above $450^{\circ}C$. The sensing properties of response time, recovery, and sensitivity of CO were improved with aging time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.751-757
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• 2000

The r.f. power effect for Pt doping is investigated on structural and electrochemical properties of amorphous vanadium oxide(V$_2$O$_{5}$) film, grown by direct current (d.c.) magnetron sputtering. Room temperature charge-discharge measurements based on a half-cell with a constant current clearly indicated that the Pt doping could improve the cyclibility of V$_2$O$_{5}$ cathode film. Using glancing angle x-ray diffraction(GXRD) and high-resolution transmission electron microscopy (HRTEM) analysis, we found that the Pt doping with 10W r.f. power induces more random amorphous structure than undoped V$_2$O$_{5}$ film. As the r.f. power of Pt target increases. large amount of Pt atoms incorporates into the amorphous V$_2$O$_{5}$ film and makes $\alpha$-PtO$_2$microcrystalline phase in the amorphous V$_2$O$_{5}$ matrix. These results suggest that the semiconducting $\alpha$-PtO$_2$ microcrystalline phase in amorphous matrix lead to a drastically faded cyclibility of 50W Pt doped V$_2$O$_{5}$ cathode film. Possible explanations are given to describe the Pt doping effect on cyclibillity of the amorphous V$_2$O$_{5}$ cathode film battery. film battery.

• Journal of Convergence for Information Technology
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• v.9 no.5
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• pp.117-124
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• 2019

This paper discusses recent trends in the fabrication of semiconducting materials among the components of thin film transistors used in AMOLED display. In order to obtain a good semiconductor film, it is necessary to change the amorphous silicon into polycrystalline silicon. There are two ways to use laser and heat. Laser-based methods include sequential lateral solidification (SLS), excimer laser annealing (ELA), and thin-beam directional crystallization (TDX). Solid phase crystallization (SPC), super grain silicon (SGS), metal induced crystallization (MIC) and field aided lateral crystallization (FALC) were crystallized using heat. We will also study research for manufacturing large AMOLED displays.