• 한국세라믹학회지
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• 제31권10호
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• pp.1089-1098
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• 1994

The effect of Si3N4 addition on the microstructure and PTCR characteristics of BaTiO3 was studied. When 0.1 mol% Sb2O3-doped BaTiO3 codoped with Si3N4 (0.1, 0.25, 0.5, 0.75, and 1 wt%, respectively) were sintered, their microstructures were changed by the amount of the liquid phase as a result of eutectic reaction at 126$0^{\circ}C$. By these microstructural changes, the specific resistivity ratio($\rho$max/$\rho$min) with Si3N4 content variation of 0.1 mol% Sb2O3-doped BaTiO3 ceramics sintered at 130$0^{\circ}C$ for 1 hour varied between 3.70$\times$102(0.1 wt% Si3N4) to 1.16$\times$103 (1wt% Si3N4).

• 대한기계학회논문집A
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• 제29권4호
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• pp.632-638
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• 2005

The surface lapping process on sapphire wafer was carried out for the epitaxial process of thin film growth of GaN semiconducting material. The planarization of the wafers was investigated by the introduction of the dummy wafers. The diamond lapping process causes the surface deformation of dislocation and micro-cracks. The material deformation due to the mechanical stress was analyzed by the X-ray diffraction and the Vickers indentation. The fracture toughness was increased with the increased annealing temperature indicating the recrystallization at the surface of the sapphire wafer The sudden increase at the temperature of $1200^{\circ}C$ was correlated with the surface phase transition of sapphire from a $-A1_{2}O_{3}\;to\;{\beta}-A1_{2}O_{3}$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1508-1511
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• 1996

In the fields of the optics, precise machine, semiconducting processing, the micro-positioning actuators are required for the control of position in submicron range. In this study, dielectric properties of 0.5PNN-(0.5-x)PZN-xPZT system ceramics with different PZT mole ratio were investigated. As the amount of PZT incerases, curie temperature was increased. The maximum of dielectric and piezoelectric constant was shown at 0.3 mole ratio of PZT amount. As a results, we have found that the structrue of ceramics with PZT 0.3 mole was morphotropic phase boundary.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• 한국세라믹학회지
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• 제25권1호
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• pp.42-48
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• 1988

Commercially available PTCR (Postive Temperature Coefficient of Resistivity) ceramics which have low room temperature resistance, high PTC effect and temperature coefficient were prepared by La3+ doped semiconducting barium calcium titanate soild solutions. PTCR characteristics were remarkably improved by addition of AST (1/3 Al2O3$.$3/4SiO2$.$1/4TiO2) and MnCl2. That can be explained by formation of liquid phase during sintering and acceptor level on the intergranular layer. Resistivity anormaly increased with decreasing cooling rate. Optimum manufacturing conditions were cooling rate below 100$.$C/hr, Ca and Mn content of 4 mol% &, 0.09-0.12mol% respectively.

• Bulletin of the Korean Chemical Society
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• 제16권9호
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• pp.870-873
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• 1995

A new ternary transition-metal selenide, Ta2Ni3Se8 has been synthesized from a eutectic halide flux. The structure of this phase has been characterized by single crystal X-ray diffraction techniques. The compound crystallizes in the orthorhombic system (D2h9-Pbam, a= 14.788(4) Å, b= 10.467(3) Å, c=3.4563(8) Å) with two formula units in the unit cell. This compound adopts the Nb2Pd3Se8 structure type. Hence, there are two chains of edge-sharing selenium trigonal prisms centered by tantalum atoms and these chains are interconnected through two kinds of nickel atoms. Nickel occupies both square planar and square pyramidal sites as does palladium in Nb2Pd3Se8. Electrical conductivity measurements indicate that this material is semiconducting.

• Bulletin of the Korean Chemical Society
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• 제29권4호
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• pp.817-821
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• 2008

We have investigated the influence of the crystal structure on the chemical bonding nature and photocatalytic activity of cubic and hexagonal perovskite A[$Cr_{1/2}Ta_{1/2}$]O3 (A = Sr, Ba) compounds. According to neutron diffraction and field emission-scanning electron microscopy, the crystal structure and particle size of these compounds are strongly dependent on the nature of A-site cations. Also, it was found that the face-shared octahedra in the hexagonal phase are exclusively occupied by chromium ions, suggesting the presence of metallic (Cr-Cr) bonds. X-ray absorption and diffuse UV-vis spectroscopic analyses clearly demonstrated that, in comparison with cubic Sr[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase, hexagonal Ba[$Cr_{1/2}Ta_{1/2}$]$O_3$ phase shows a decrease of Cr oxidation state as well as remarkable changes in interband Cr d-d transitions, which can be interpreted as a result of metallic (Cr-Cr) interactions. According to the test of photocatalytic activity, the present semiconducting materials have a distinct activity against the photodegradation of 4-chlorophenol. Also the Srbased compound was found to show a higher photocatalytic activity than the Ba-based one, which is attributable to its smaller particle size and its stronger absorption in visible light region.

• 한국세라믹학회지
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• 제40권11호
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• pp.1106-1112
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• 2003

$\beta$-FeSi$_2$의 열전물성에 있어서 산소의 역할을 규명하기 위해서, 고온상 ($\alpha$+$\varepsilon$)과 저온상 ($\beta$)-FeSi$_2$ 시료에 대해 산화처리에 따른 열전물성 측정 및 분석실험을 행하였다. 산화에 의해 소결밀도가 감소하였으며, 반도체상으로의 전이도 방해되었다. 모든 시료에서 도전율과 열전도율은 산화처리시간과 함께 감소하였다. 순수한 FeSi$_2$ 및 고온상 ($\alpha$+$\varepsilon$)을 산화처리한 시료 Seebeck 계수는 작은 양의 값을 나타낸 반면에, 저온상 ($\beta$)을 산화처리한 FeSi$_2$ 는 음의 값을 나타내었으며 약 500K 부근에서 최대값을 나타내었다. 또 산화시간과 함께 최대값도 증가하였다.

• 한국재료학회지
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• 제11권2호
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• pp.132-136
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• 2001

기계적 합금화 공정을 이용하여 열전재료$FeSi_2$분말을 제조하여 열간압축법을 사용하여 성형하였다. 열간압축 성형된 $FeSi_2$는 열전특성을 나타내는 $\beta$-$FeSi_2$ 상 및 상변태가 완료되지 않은 $\alpha$-$Fe_2$$Si_{5}$와 $\varepsilon$-FeSi의 혼합상으로 이루어져 있음이 확인되었다. 열전재료로의 $\beta$-$FeSi_2$ 상변태 유도를 위해 항온열처리를 행하여 상변태 조건을 조사하였다. SEM, TEM, XRD, DTA 등을 이용하여 상변태 거동을 분석한 결과, $830^{\circ}C$에서 24시간 진공 항온열처리 후 단상의 $\beta$-FeSi$_2$ 상을 얻을 수 있었다. 항온열처리 전의 열간압축 성형체와 상변태가 완료된 $\beta$-FeSi$_2$의 기계적 성질과 열전 특성을 측정하여 비교 분석하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2009년도 추계학술발표대회
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• pp.14-14
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• 2009

High frequency electromagnetic(EM) waves are increasingly being applied in industries because of saturationat lower frequency bands as a result of huge demand. However, electromagneticinterference (EMI) has become a serious problem, and as a result, highfrequency EM absorbers are now being extensively studied. Also, recentdevelopments in absorber technology have focused on producing absorbers thatare thin, flexible, and strong. Hence, one-dimension ferrous nano-materials area potential research field, because of their interesting electronic andmagnetic properties. Commercially, EM wave absorbing products are made ofcomposites, which blend the insulating polymer with magnetic fillers. Inparticular, the shape of the magnetic fillers, such flaky, acicular, or fibrousmagnetic metal particles, rather than spherical, is essential for synthesizingthin and lightweight EM wave absorbers with higher permeability. High aspectratio materials exhibit a higher permeability value and therefore betterabsorption of the EM wave, because of electromagnetic anisotropy. Nanowires areusually fabricated by drawing, template synthesis, phase separation, selfassembly, and electrospinning with a thermal treatment and reduction process.Producing nanowires by the electrospinning method involves a conventionalsol-gel process that is simple, unique, and cost-effective. In thispresentation, Magnetic nanowire and dielectric materials coated magneticnanowire with a high aspect ratio were successfully synthesized by theelectrospinning process with heat treatment and reduction. In addition toestimating the EM wave absorption ability of the synthesized magnetic anddielectric materials coated magnetic nanowire with a network analyzer, weinvestigated the possibility of using these nanowires as high-frequency EM waveabsorbers. Furthermore, a wide variety of topics will be discussed such as thetransparent conducting nanowire and semiconducting nanowire/tube with theelectrospinning process.