• Korean Journal of Materials Research
• /
• v.20 no.11
• /
• pp.623-627
• /
• 2010

Semiconducting metal oxides have been frequently used as gas sensing materials. While zinc oxide is a popular material for such applications, structures such as nanowires, nanorods and nanotubes, due to their large surface area, are natural candidates for use as gas sensors of higher sensitivity. The compound ZnO has been studied, due to its chemical and thermal stability, for use as an n-type semiconducting gas sensor. ZnO has a large exciton binding energy and a large bandgap energy at room temperature. Also, ZnO is sensitive to toxic and combustible gases. The NO gas properties of zinc oxide-single wall carbon nanotube (ZnO-SWCNT) composites were investigated. Fabrication includes the deposition of porous SWCNTs on thermally oxidized $SiO_2$ substrates followed by sputter deposition of Zn and thermal oxidation at $400^{\circ}C$ in oxygen. The Zn films were controlled to 50 nm thicknesses. The effects of microstructure and gas sensing properties were studied for process optimization through comparison of ZnO-SWCNT composites with ZnO film. The basic sensor response behavior to 10 ppm NO gas were checked at different operation temperatures in the range of $150-300^{\circ}C$. The highest sensor responses were observed at $300^{\circ}C$ in ZnO film and $250^{\circ}C$ in ZnO-SWCNT composites. The ZnO-SWCNT composite sensor showed a sensor response (~1300%) five times higher than that of pure ZnO thin film sensors at an operation temperature of $250^{\circ}C$.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1893-1895
• /
• 2005

To measure electrical properties of semiconducting materials in power cable, we have investigated dielectric properties of EVA showed by changing the content of carbon black. The specimen was primarily kneaded in material samples of pellet form for 5 minutes on rollers ringing between $70[^{\circ}C]$ and $100[^{\circ}C]$. Then that was produced as sheets after pressing for 20 minutes at $180[^{\circ}C]$ with a pressure of 200[kg/cm]. The contents of conductive carbon black were 20, 30 and 40(wt%), respectively The dielectric properties of specimens were measured by dielectric thermal analyzer (CONCEPT 40, NOVOCONTROL). Measuring frequencies were 10, 60, 100, 1000, 10000, 100000, 1000000(Hz) and measuring temperatures were -40, -20, 20, $90[^{\circ}C]$. From above experimental result, permittivity was increased, while $tan{\delta}$ was decreased according to an increment of the content of carbon black.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.4
• /
• pp.26-29
• /
• 2003

To discover electrical properties of individual single wall nanotube(SWNT), a number of SWNT-based tubeFETs have been fabricated. The device consists of a single semiconducting SWNT on an insulating substrate, contacted at each end by metal electrodes. It presents high transconductances, and charge storage phenomenon, which is the operations of injecting electrons from the nanotube channel of a tubeFET into charge traps on the surface of the $SiO_2$ gate dielectric, thus shifting the threshold voltage. This phenomenon can be repeated many times, and maintained for the hundreds of seconds at room temperature. We will report this phenomenon as the memory effects of the SWNT, and attempt to use this property for the memory device.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2003.07a
• /
• pp.1047-1052
• /
• 2003

Controlling carrier transport in light emitting polymers is extremely important for their efficient use in organic opto-electronic devices [1]. Here we show that the interactions between single wall carbon nanotubes (SWNTs) and conjugated polymers can be used to modify the overall mobility of charge carriers within nanotube-polymer nanocomposites. By using a unique, double emitting-organic light emitting diodes (DE-OLEDs) structure. we have characterized the hole transport within electroluminescent nanocomposites (nanotubes in poly (m-phenylene vinylene-co-2,5-dioctoxy-p-phenylene) or PmPV). We have shown using this idea that single devices with color tunability can be fabricated. It is seen that SWNTs in PmPV are responsible for hole trapping, leading to shifts in the emission wavelengths. Our results could lead to improved organic optical amplifiers, semiconducting devices, and displays.

• 한국초전도학회:학술대회논문집
• /
• 2008.08a
• /
• pp.66-66
• /
• 2008

• Proceeding of EDISON Challenge
• /
• 2013.04a
• /
• pp.238-239
• /
• 2013

We studied the thermal and electron properties of covalent one-dimensional (1D) monatomic linear chains of carbon, particularly carbyne. We found the ${\alpha}$-carbyne (Polyyne, alternating single and triple C-C bond co-existing) is more stable than ${\beta}$-carbyne (Equally-spaced based on C-C double bond) energetically. As investigation of electron density of states (EDOS), polyyne and cumulene had different electronic characteristic, which corresponding metallic and semiconducting respectively. We also calculate the phonon dispersion, phonon density of states (PDOS) and phonon transmission of carbynes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.13 no.6
• /
• pp.538-544
• /
• 2000

The laser patterning of sputter-deposited CoNdZr/Cu/CoNbZr multi-layered films had been tried using Nd:YAG laser. However generally it is very difficult to remove metal films because of their high reflectance of the laser on the surfaces. As a counterproposal for this problem authors for the first time tried to deposit energy-absorbing layers on the metal films and then irradiated the laser on the surfaces of energy-absorbing layers. Here the energy-absorbing layers consisted of laser energy-absorbing fine powders and binding polymers. Three kinds of powders for the energy-absorbing layers had been used to see the difference in the pattern formation with the degree of laser energy absorption. They were electrically conductive silver powders insulating BaTiO$_3$powder and semiconducting carbon powder. Remarkable difference in width of the formed pattern and the roughness of pattern edge were observed with the characteristic of the powder for the energy-absorbing layer. The pattern width using carbon paste was about three times larger than that using BaTiO$_3$paste. It was observed that the energy-absorbing layer with carbon was the most effective on this micro-patterning.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.156-157
• /
• 2006

To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of Carbon nanotube(CNT) that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the five of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of Carbon nanotube. We could know CNT/EEA was excellent more than other specimens from above experimental results.

• Journal of Powder Materials
• /
• v.17 no.2
• /
• pp.107-112
• /
• 2010

Carbon-nanotube-embedded bismuth telluride (CNT/$Bi_2Te_3$) matrix composites were fabricated by a powder metallurgy process. Composite powders, whereby 5 vol.% of functionalized CNTs were homogeneously mixed with $Bi_2Te_3$ alloying powders, were successfully synthesized by using high-energy ball milling process. The powders were consolidated into bulk CNT/$Bi_2Te_3$ composites by spark plasma sintering process at $350^{\circ}C$ for 10 min. The fabricated composites showed the uniform mixing and homogeneous dispersion of CNTs in the $Bi_2Te_3$ matrix. Seebeck coefficient of CNT/$Bi_2Te_3$ composites reveals that the composite has n-type semiconducting characteristics with values ranging $-55\;{\mu}V/K$ to $-95\;{\mu}V/K$ with increasing temperature. Furthermore, the significant reduction in thermal conductivity has been clearly observed in the composites. The results showed that CNT addition to thermoelectric materials could be useful method to obtain high thermoelectric performance.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.492-492
• /
• 2011

단일벽 탄소나노튜브(Single-Walled Carbon Nanotubes, SWCNTs)는 매우 우수한 전기적, 광전자적 특성을 가지고 있어 차세대 나노 전자소자 물질로 각광받고 있다. 특히, 이들의 전기적 특성은 직경과 카이랄리티(chirality)에 따라 금속성(metallic)과 반도체성(semiconducting)으로 구분된다. 각 특성에 따라 금속성은 투명전극, 반도체성은 전계효과 트랜지스터(CNT-FET)로 활용가능성이 높다. 하지만, 일반적으로 단일벽 탄소나노튜브는 이 두 가지의 특성이 혼재되어 합성되기 때문에, 그들의 선택적 분리는 나노튜브 기반 전자소자 응용을 위해 매우 중요한 과정 중 하나이다. 최근에는 반응 가스를 이용한 선택적 제거, 밀도차를 이용한 원심분리법(density gradient ultracentrifugation) 등 다양한 방법들이 보고된 바 있다. 본 연구는 대기 중에서 마이크로웨이브 조사하여 금속성 나노튜브만을 선택적으로 제거하였다. 마이크로웨이브 조사는 CVD 방법과 전기 방전법으로 성장된 단일벽 탄소나노튜브에 800W로 조사 시간을 변화하며 수행하였다. 실험 결과, 조사 시간이 증가할수록 두 종류의 나노튜브에서 반도체성 나노튜브는 남아있는 반면 금속성 나노튜브는 점차 제거되었다. 이러한 원인은 각 전기적 특성에 따른 유전상수 차이에 의하여 기인한 것이다. 전기적 특성과 결정성은 라만 분광법(Raman spectroscopy)을 통하여 분석하였으며, 직경 및 분산정도는 주사전자현미경(scanning electron microscope), 투과전자현미경(tunneling electron microscope)으로 관찰하였다.