• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.1
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• pp.592-598
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• 2017

A method for estimating the optical characteristics of ceramic materials under high temperature conditions has been applied and evaluated. For that purpose, an interface system combined with a photo-spectrometer was made to keep the samples at the required high temperature. The transmittance of the samples was measured at various temperatures. The measured transmittance data was used to estimate the refractive index using an optical simulation model in conjunction with the Sellmeier equation. The Sellmeier equation parameters were selected by trial-and-error when the transmittance recalculated using the estimated refractive index was compared with the measured transmittance. Furthermore, the estimated refractive indices were checked by a comparison with the reference data at some typical wavelengths at room temperature.

• Proceedings of the Optical Society of Korea Conference
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• 2000.08a
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• pp.10-11
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• 2000

광섬유 격자는 WDM 광시스템의 필터뿐만 아니라 센서로도 많은 연구가 되고 있다. 이 경우 필수적인 것이 유효굴절률에 대한 해석이다. 유효굴절률은 광섬유의 코어와 클래딩의 굴절률과 반지름에 따른 수치해석을 통해서도 구할 수 있다. 수치해석과정에서 필수적인 것이 파장에 따른 굴절률을 계산할 수 있는 Sellmeier식이다$^{(1)}$ . 본 연구에서는 광섬유격자 쌍을 이용하여 광섬유의 유효굴절률을 클래딩 모드수에 따라 측정할 수 있는 새로운 방법을 제시한다. (중략)

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.277-282
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• 1997

The complex refractive index of Diamond-like Carbon (DLC) thin films, which can be applied to optical devices or electrical devices, have been determined using optical methods. DLC thin films are grown on Si(100) substrates and vitreous silica substrates respectively, using the technique of plasma enhanced chemical vapor deposition (PECVD). The spectroscopic ellipsometry data($\psi$, $\Delta$) and the transmission spectra of these DLC films are obtained. These optical spectra are analyzed with the help of the Sellmeier dipersion relation and a quantum mechanically derived dispersion relation. Using spectroscopic ellipsometry data at their transparent region, the refractive index and the effective thickness of DLC films on vitreous silica are model calculated, Then the transmission spectra are inverted to yield the extinction coefficient spectra k(λ) at absorbing region. These spectra are fit to the quantum mechanical dispersion relation and the best fit dispersion constants are determined. The complex refractive indices are easily calculated with these constants. The spectroscopic ellipsometry data at the absorbing region in model calculated to give the packing densities and the degrees of surface microroughness of DLC films. Discussions are made in correlation with the growth condition of DLC films.

• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.1-7
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• 2003

We determined the optical constants of organic light emitting material of Alq$_3$ in a spectral range between 1.5 and 6 eV using the physical model introduced by Forouhi and Bloomer［Phys. Rev. B 34, pp. 7018-7026, 1986.］. The initial parameters of $A_i,\;B_i,\;C_i$ of Forouhi-Bloomer dispersion relations were determined from the absorption peaks and widths of absorption spectra of the Alq$_3$ film. The refractive index of substrate, a fused silica, is derived from the Sellmeier equation with the measured transmittance and reflectance spectra. Then, the complex refractive index and thickness of the Alq$_3$ film were calculated by use of a nonlinear least square fitting program with the Forouhi-Bloomer dispersion relation and the measured transmittance and reflectance spectra.

• ETRI Journal
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• v.31 no.6
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• pp.667-674
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• 2009

Terahertz time-domain spectroscopy has been used to study the optical and dielectric properties of three chalcogenide glasses: $Ge_{30}As_8Ga_2Se_{60}$, $Ge_{35}Ga_5Se_{60}$, and $Ge_{10}As_{20}S_{70}$. The absorption coefficients ${\alpha}({\nu})$, complex refractive index n(${\nu}$), and complex dielectric constants ${\varepsilon}({\nu})$ were measured in a frequency range from 0.3 THz to 1.5 THz. The measured real refractive indices were fitted using a Sellmeier equation. The results show that the Sellmeier equation fits well with the data throughout the frequency range and imply that the phonon modes of glasses vary with the glass compositions. The theory of far-infrared absorption in amorphous materials is used to analyze the results and to understand the differences in THz absorption among the sample glasses.

• Korean Journal of Optics and Photonics
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• v.14 no.6
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• pp.594-599
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• 2003

By using the spectroscopic ellipsometry, we have measured and analyzed the optical characteristics of P $r^3$$^{+}$-doped selenide glasses of Ge-Sb-Se system, a strong candidate material for U band fiber amplifiers. The ellipsometric spectra measured in the transparent wavelengths range of the material were all fitted to a model consisting of ambient/roughness/thin fil $m_strate structures to obtain simultaneously the optical properties such as refractive index, in terms of Sellmeier parameters and film structure of P $r^3$$^{+}$-doped selenide glasses. Repeated measurements on different positions in both polished faces rendered to verify positional dependence of measured spectre-ellipsometric data. Hence, the model made possible the analysis of the optical characteristics of the glasses. Even though surface roughness was mainly responsible for the position dependencies, the averaged refractive indexes were as precise as to reflect the minute compositional change tantamount to 1 mol%. The measured refractive indexes are useful for design of core and clad compositions of single-mode selenide optical fibers.

• Journal of Surface Science and Engineering
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• v.29 no.6
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• pp.654-659
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• 1996

Amorphous $TiO_2$ thin films were deposited on silicon substrates by the RF magnetron sputtering under various conditions, and studied by the spectroscopic ellipsometry (SE). To determine the optical constants as a function of photon energy and also to depth-profile the as-deposited $TiO_2$ thin films, we analyzed the ellipsometric spectra using the effective medium approximation and the dispersion equations. Especially, we improved the modeling accuracy by selectively using either the Sellmeier or the Forouhi and Bloomer dispersion equation in different energy regions.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.60-68
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• 2000

The optical constants ($E_g^d$, n, K) of the polycrystalline CdSe thin films deposited on the glass substrate by the electron-beam evaporation technique are determined over 400~2,500 nm photon wavelengths. In order to explain the variation of the optical contents with film thickness and substrate temperatures, the surface microstructural parameter are investigated by AFM (atomic forced microscope( images for the films deposited by different growth conditions. It is shown that the variations of optical constants are close related to changes of the surface morphology of the CdSe thin films. The decrease in the band gap with film thickness is connected with quantum size effects due to increase of the grain size. The refractive index of CdSe films decrease with increasing the grain size of the films, and the dispersion of the refractive index followed a single oscillator model according to the Sellmeier formulation.

• Journal of Ceramic Processing Research
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• v.23 no.4
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• pp.535-540
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• 2022

Atmospheric pressure plasma (APP) systems operate at atmospheric pressure and low temperatures, eliminating the need forvacuum systems such as vacuum chambers and pumps. In this paper, we studied that silicon dioxide thin films were formedat room temperature (25 oC) and 400 oC by APP processes on silicon wafers. A mixture of hexamethyldisilazane, oxygen,helium, and argon was supplied to the plasma apparatus to form the SiO2 layer. It was observed that a heat insulating layerhaving a thickness of about 22 nm at 25 oC and about 75 nm at 400 oC was formed. Although the surface was clean in samplestreated at 400 oC, small grains were observed in samples processed at room temperature. However, no void or defect in allsamples is observed inside the thin film from the surface. The physical property of the SiO2 thin film carried out by measuringrefractive index and density. The experimental refractive index of silicon dioxide grown by applying heat can be fitted to theSellmeier equation. Also, the film density of the sample at 400 oC using a XRR was observed to be 2.25 g/cm3, similar to thatof the glass, but that of the sample treated at room temp. was very low at 1.68 g/cm3. We also investigated the voltagedependentcurrent change in the oxide material. The SiO2 layer coated at room temperature showed a breakdown electricalfield of 2.5 MV/cm, while oxides deposited at 400 oC showed a characteristic of 9.9 MV/cm.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.133-140
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• 2006

The growth characteristics and properties of large size $SrAlF_5$ single crystals are described and compared with those of $BaMgF_4$. Transmission spectra in the vacuum ultraviolet wavelength region indicate a high transparency of $SrAlF_5$ (about 90% without considering surface reflection loses) down to 150 nm, on contrast to the optical loses observed for $BaMgF_4$. The ferroelectric character of $SrAlF_5$ is evidenced by the reversal of the spontaneous polarization in a hysteresis loop. The higher potential of $SrAlF_5$ in comparison with $BaMgF_4$ for the realization of all-solid-state lasers in the ultraviolet wavelength region by the quasi-phase matching (QPM) technique is pointed out. $SrAlF_5$, besides a higher grade of transparency, shows a nonlinear effective coefficient similar to that of quartz and uniaxial nature, on contrast to the one order smaller nonlinear coefficient and biaxial character of $BaMgF_4$. The refractive index of $SrAlF_5$ from the ultraviolet to the near-infrared wavelength region is measured by the minimum deviation method. The Sellmeier and Cauchy coefficients are obtained from the fits to the curves of the ordinary and extraordinary refractive indices, and the grating period for the first order QPM is estimated as a function of the wavelength. The poling periodicity for 193 nm SHG from 386 nm is $4{\mu}m$.