• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.19 no.1
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• pp.197-202
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• 2019

A small millimeter-wave tracking radar power supply must provide stable power with minimal ripple noise and the switching frequency noise of the DC-DC converter must have a real-time self-test capability through on-the-fly monitoring without causing false alarms and ghost In this study, we developed a multi-output switching power supply with output power of more than 80% (@ 100% load) and 10 output power by adopting + 28VDC input for application to small millimeter wave tracking radar, DC-DC converter is applied for large power output and multi-output flyback method is applied for the remaining small power output. The test results show that 85% efficiency efficiency is achieved under 100% load condition.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.11
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• pp.83-94
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• 2003

In this paper. a highly linear and low glitch CMOS current mode digital-to-analog converter (DAC) by self calibration bias circuit is proposed. The architecture of the DAC is based on a current steering 6＋4 segmented type and new switching scheme for the current cell matrix, which reduced non-linearity error and graded error. In order to achieve a high performance DAC . novel current cell with a low spurious deglitching circuit and a new inverse thermometer decoder are proposed. The prototype DAC was implemented in a 0.35${\mu}{\textrm}{m}$ n-well CMOS technology. Experimental result show that SFDR is 60 ㏈ when sampling frequency is 32MHz and DAC output frequency is 7.92MHz. The DAC dissipates 46 mW at a 3.3 Volt single power supply and occupies a chip area of 1350${\mu}{\textrm}{m}$ ${\times}$750${\mu}{\textrm}{m}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.410-410
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• 2013

Next-generation nonvolatile memory (NVM) has attracted increasing attention about emerging NVMs such as ferroelectric random access memory, phase-change random access memory, magnetic random access memory and resistance random access memory (RRAM). Previous studies have demonstrated that RRAM is promising because of its excellent properties, including simple structure, high speed and high density integration. Many research groups have reported a lot of metal oxides as resistive materials like TiO2, NiO, SrTiO3 and ZnO [1]. Among them, the ZnO-based film is one of the most promising materials for RRAM because of its good switching characteristics, reliability and high transparency [2]. However, in many studies about ZnO-based RRAMs, there was a problem to get lower current level for reducing the operating power dissipation and improving the device reliability such an endurance and an retention time of memory devices. Thus in this paper, we investigated that highly reproducible bipolar resistive switching characteristics of W doped ZnO RRAM device and it showed low resistive switching current level and large ON/OFF ratio. This may be caused by the interdiffusion of the W atoms in the ZnO film, whch serves as dopants, and leakage current would rise resulting in the lowering of current level [3]. In this work, a ZnO film and W doped ZnO film were fabricated on a Si substrate using RF magnetron sputtering from ZnO and W targets at room temperature with Ar gas ambient, and compared their current levels. Compared with the conventional ZnO-based RRAM, the W doped ZnO ReRAM device shows the reduction of reset current from ~$10^{-6}$ A to ~$10^{-9}$ A and large ON/OFF ratio of ~$10^3$ along with self-rectifying characteristic as shown in Fig. 1. In addition, we observed good endurance of $10^3$ times and retention time of $10^4$ s in the W doped ZnO ReRAM device. With this advantageous characteristics, W doped ZnO thin film device is a promising candidates for CMOS compatible and high-density RRAM devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.91-105
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• 2016

Carbon Nanotube Field-Effect Transistors (CNTFETs) have been studied as candidates for post Si CMOS owing to the better electrostatic control and high mobility. To enhance the immunity against short - channel effects (SCEs), the novel channel and gate engineered architectures have been proposed to improve CNTFETs performance. This work presents a comprehensive study of the influence of channel and gate engineering on the CNTFET switching, high frequency and circuit level performance of carbon nanotube field-effect transistors (CNTFETs). At device level, the effects of channel and gate engineering on the switching and high frequency characteristics for CNTFET have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self - consistently with Poisson's equations. It is revealed that hetero - material - gate and lightly doped drain and source CNTFET (HMG - LDDS - CNTFET) structure can significantly reduce leakage current, enhance control ability of the gate on channel, improve the switching speed, and is more suitable for use in low power, high frequency circuits. At circuit level, using the HSPICE with look - up table(LUT) based Verilog - A models, the impact of the channel and gate engineering on basic digital circuits (inverter, static random access memory cell) have been investigated systematically. The performance parameters of circuits have been calculated and the optimum metal gate workfunction combinations of ${\Phi}_{M1}/{\Phi}_{M2}$ have been concluded in terms of power consumption, average delay, stability, energy consumption and power - delay product (PDP). In addition, we discuss and compare the CNTFET-based circuit designs of various logic gates, including ternary and binary logic. Simulation results indicate that LDDS - HMG - CNTFET circuits with ternary logic gate design have significantly better performance in comparison with other structures.

• The Transactions of the Korean Institute of Power Electronics
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• v.15 no.2
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• pp.150-158
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• 2010

The operational characteristics of a resonant DC/DC converter, which can harvest thermoelectric energy, is analyzed, depending on the relative magnitudes of the input voltage and the load voltage. The resonant converter consists of LC resonant circuit connected to DC input source and a resonant pulse converter in which the input energy is transferred to the load as the resonant capacitor voltage is peak. The resonant capacitor doubles the input voltage by the resonance phenomenon. By the relative magnitude between the input voltage and the output voltage, the resonant DC/DC converter operates in three different modes. For boost mode, the peak voltage of the resonant capacitor is smaller than the load voltage. For hybrid mode, the peak voltage of the resonant capacitor is bigger than the load voltage and every switching period has both the boost mode and the direct mode. For the direct mode, the input voltage is bigger than the load voltage and the converter transfers directly the input energy to the load without the switching operation. Operation principles and the feasibility of the converter for the thermoelectric energy harvesting are verified with PSPICE simulation and experiment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.306.2-306.2
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• 2014

전자기기의 휴대성과 이동성이 강조되고 있는 현대사회에서 비휘발성 메모리는 메모리 산업에 있어 매우 매력적인 동시에 커다란 잠재성을 지닌다. 이미 공정의 한계에 부딪힌 Flash 메모리를 대신하여 10nm 이하의 공정이 가능한 상변화 메모리(Phase-Change Memory, PRAM), 스핀 주입 자화 반전 메모리(Spin Transfer Torque-Magnetic RAM, STT-MRAM), 저항 변화 메모리(Resistive Random Access Memory, ReRAM)가 차세대 비휘발성 메모리 후보로서 거론되고 있으며, 그 중에서도 ReRAM은 빠른 속도와 낮은 소비 전력, CMOS 공정 호환성, 그리고 비교적 단순한 3차원 적층 구조의 특성으로 인해 활발히 연구되고 있다. 특히 최근에는 질화물 또는 질소를 도핑한 산화물을 저항변화 물질로 사용하는 ReRAM이 보고되고 있는데, 이들은 동작전압이 낮을 뿐만 아니라 저항 변화(Resistive Switching, RS) 과정에서 일어나는 계면 산화를 방지할 수 있으므로 ReRAM의 저항 변화 재료로서 각광받고 있다. 그러나 Cell 단위의 ReRAM 소자를 Crossbar Array 구조에 적용시켰을 때 주변 Cell과의 저항 상태 차이로 인해 전류가 낮은 저항 상태(LRS)의 Cell로 흘러 의도치 않은 동작을 야기한다. 이와 같이 누설 전류(Leakage Current)로 인한 상호간의 간섭이 일어나는 Cross-talk 현상이 존재하며, 공정의 간소화와 집적도를 유지하면서 이 문제를 해결하는 것은 실용화하기에 앞서 매우 중요한 문제이다. 따라서, 본 논문에서는 Read 동작 시 발생하는 Cell과 Cell 사이의 Cross-talk 문제를 해결하기 위해 자가 정류 특성(Self-Rectifying)을 가지는 실리콘 질화물/알루미늄 질화물 이중층(Si3N4/AlN Bi-layer)으로 구성된 ReRAM 소자 구조를 제안하였으며, Sputtering 방법을 이용하여 제안된 소자를 제작하였다. 전압-전류 특성 실험결과, 제안된 구조에 대한 에너지 밴드 다이어그램 시뮬레이션 결과와 동일하게 Positive Bias 영역에서 자가 정류 특성을 획득하였고, 결과적으로 Read 동작 시 발생하는 Cross-talk 현상을 차단할 수 있는 결과를 확보하였다.

• Journal of Power Electronics
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• v.16 no.5
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• pp.1869-1883
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• 2016

In recent years, some converter structures and analyzing methods for the voltage regulation of stand-alone self-excited induction generators (SEIGs) have been introduced. However, all of them are concerned with the three-phase voltage control of three-phase SEIGs or the single-phase voltage control of single-phase SEIGs for the operation of these machines under balanced load conditions. In this paper, each phase voltage is controlled separately through separated converters, which consist of a full-bridge diode rectifier and one-IGBT. For this purpose, the principle of the electronic load controllers supported by fuzzy logic is employed in the two-different proposed converter structures. While changing single phase consumer loads that are independent from each other, the output voltages of the generator are controlled independently by three-number of separated electronic load controllers (SELCs) in two different mode operations. The aim is to obtain a rated power from the SEIG via the switching of the dump loads to be the complement of consumer load variations. The transient and steady state behaviors of the whole system are investigated by simulation studies from the point of getting the design parameters, and experiments are carried out for validation of the results. The results illustrate that the proposed SELC system is capable of coping with independent consumer load variations to keep output voltage at a desired value for each phase. It is also available for unbalanced consumer load conditions. In addition, it is concluded that the proposed converter without a filter capacitor has less harmonics on the currents.

• The Journal of the Korea institute of electronic communication sciences
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• v.13 no.1
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• pp.153-162
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• 2018

The importance of energy harvesting technique is increasing due to the elevated level of demand for sustainable power sources for wearable device applications. In this study, we developed an Energy Harvesting wearable Platform(EH-P) architecture which is used in the design of a multi-energy source based on TENG. The proposed switching circuit produces power with higher current at lower voltage from energy harvesting sources with lower current at higher voltage. This can powers microcontrollers for a short period of time by using PV and TENG complementarily placed under hard conditions for the sources such as indoors. As a result, the whole interface circuit is completely self-powered with this makes it possible to run of sensing on a Wearable device platform. It was possible to increase the wearable device life time by supplying more than 29% of the power consumption to wearable devices. The results presented in this paper show the potential of multi-energy harvesting platform for use in wearable harvesting applications, provide a means of choosing the energy harvesting source.

• Proceedings of the Korea Concrete Institute Conference
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• 2008.04a
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• pp.173-176
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• 2008

Use of concrete has undoubtedly become widespread in construction. Sensors are used to add functional characteristics to concrete. Self-diagnosing, smart concrete is also being developed. Development of these functional materials and structures will play an important role in protecting buildings and structures against external factors brought about by unusual weather among others. In this study, the innovative measurement system is presented where material damages and internal stress can simply be detected against the compressive and bending force of the structure using light-emitting diode and the resistance property of electric fuse.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.28 no.3
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• pp.304-311
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• 2018

Objectives: The purpose of this study was to compare the self-reported symptoms of occupational asthma, occupational rhinitis, and respiratory symptoms between a direct exposure to flour dust group and a non-exposure group from the bakery industry. Methods: The participants were 62 workers directly exposed to flour dust and 30 non-exposed workers. The survey was composed of questions related to general characteristics. Korean self-reported respiratory symptoms(SNU-93), occupational asthma, and occupational rhinitis data was collected from April to July 2017. Results: The smoking rate among the direct exposure to flour dust workers was 67.7% and the mean of working hours(11-12) was 96.8%. The SNU-93 questionnaire revealed that respiratory symptoms in the chest and wheezing or whistling were significantly higher among the direct-exposure group than non-exposure group. The response for occupational asthma symptoms was significantly higher in the direct exposure group(2.4 points) than in the non-exposure group(1.6 points). Conclusion: In order to decrease the symptoms of these respiratory diseases among bakery workers exposed to flour dust, it is necessary to reduce working hours and the smoking rate. The performance of periodic medical examinations is needed to find abnormal respiratory diseases. In addition, workers who have been diagnosed with asthma and rhinitis should consider switching to a process that is not exposed to flour dust.