• Title/Summary/Keyword: Selective oxidation

Search Result 256, Processing Time 0.029 seconds

Characteristics of Mercury Oxidation by an SCR Catalyst with Gas Composition (가스조성에 따른 선택적 환원촉매의 수은 산화 특성)

  • Lee, Sang-Sup;Kim, Kwang-Yul;Oh, Kwang-Joong;Jeon, Jun-Min;Kim, Do-Jeung;Kim, Ju-Yeong
    • Particle and aerosol research
    • /
    • v.8 no.4
    • /
    • pp.125-132
    • /
    • 2012
  • Mercury oxidation in an SCR(selective catalytic reduction) catalyst was tested in this study with the conditions simulating the SCR system in full-scale coal-fired flue gas. A commercially available SCR catalyst was located in a temperature-controlled reactor system, and simulated gas was injected into the reactor. Mercury oxidation efficiency was determined from the difference between inlet and outlet elemental mercury concentrations. A control experiment was carried out with the gas composition of 12% $CO_{2}$, 5% $H_{2}O$, 5% $O_{2}$, 500 ppm $SO_{2}$, 400 ppm NO, 400 ppm $NH_{3}$, 5 ppm HCl, and 20 ${\mu}g/m^{3}$ Hg. Additional tests were conducted with different gas composition from the control condition to investigate the effect of gas composition on mercury oxidation in the SCR catalyst.

Vapor-phase Oxidation of Alkylaromatics over V/TiO2 and VSb/Al2O3 Catalysts: Effect of Alkali Metals

  • Yoon, Ji-Woong;Jhung, Sung-Hwa;Chang, Jong-San
    • Bulletin of the Korean Chemical Society
    • /
    • v.28 no.12
    • /
    • pp.2405-2408
    • /
    • 2007
  • Oxidation of alkylaromatics including toluene and p-methoxytoluene has been carried out over alkali metal (AM)-containing catalysts such as AM-V/TiO2 and AM-VSb/Al2O3 in vapor-phase using oxygen as an oxidant. The selectivity for partial oxidations increases with incorporation of an alkali metal or with increasing the basicity of alkali metals (from Na to Cs), irrespective of the supports or reactants. However, the conversion is nearly constant or slightly decreasing with the addition of alkali metals in the catalyst. The increased selectivity may be related with the decreased acidity even though more detailed work is necessary to understand the effect of alkali metals in the oxidation. The AM-VSb/Al2O3 may be suggested as a potential selective catalyst for vapor-phase oxidations.

Investigation of Elemental Mercury Oxidation on Commercial SCR Catalysts in Flue Gas of Fossil Fired Power Plant (상용 SCR 촉매상에서 화력발전소 배기가스 중 원소수은의 산화반응연구)

  • Lee, Seung-Min;Lee, Jung-Bin
    • Journal of Korean Society for Atmospheric Environment
    • /
    • v.26 no.3
    • /
    • pp.245-252
    • /
    • 2010
  • For the purpose of evaluating to remove elemental mercury using SCR (Selective Catalytic Reduction) catalysts, the result of the concentration variation of elemental mercury in lab experiment and field measurement was compared. The effect of the elemental mercury oxidation on commercial catalysts was studied in simulated gas. Three species of SCR catalyst, $V_2O_5-TiO_2$ type, were selected. The elemental mercury reduced 30% without HCl gas in SCR operating condition. But the width of reduction increased 60% at 20 ppm HCl gas. According to the result of field measurement, reduction rate of elemental mercury at SCR outlet showed 60%. The total mercury concentration decreased about 20%. The results were similar to the lab test. The results of chemical analysis of test sample showed increase of mercury concentration but surface change was not observed.

SULFIDATION PROCESSING AND Cr ADDITION TO IMPROVE OXIDATION RESISTANCE OF Ti-Al INTERMETALLIC COMPOUNDS AT ELEVATED TEMPERATURES

  • Narita, Toshio;Izumi, Takeshi;Yatagai, Mamoru;Yoshioka, Takayuki
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 1999.05a
    • /
    • pp.5-5
    • /
    • 1999
  • A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

  • PDF

NOx Removal of NH3-SCR Catalysts with Operating Conditions (공정조건에 따른 NH3-SCR용 촉매의 질소산화물 제거특성)

  • Park, Kwang Hee;Cha, Wang Seog
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.13 no.11
    • /
    • pp.5610-5614
    • /
    • 2012
  • Performance of catalyst was studied with various operating conditions for selective catalytic reduction of $NO_x$ with $NH_3$. It is confirmed that catalysts containing Mn and Cu have a good efficiency in the usage of oxygen by the $H_2$-TPR analysis. In the case of catalyst #1, $NO_x$ conversion was decrease with the increase of reaction temperature. But in the case of catalyst #2, $NO_x$ conversion was increased and then remained constant with the increase of reaction temperature. This phenomenon is due to the difference of the $NH_3$ oxidation of both catalysts.

Influence of Selective Oxidation Phenomena in CGLs on Galvanized Coating Defects Formation

  • Gong, Y.F.;Birosca, S.;Kim, Han S.;De Cooman, B.C.
    • Corrosion Science and Technology
    • /
    • v.7 no.1
    • /
    • pp.1-5
    • /
    • 2008
  • The gas atmosphere in continuous annealing and galvanizing lines alters both composition and microstructure of the surface and sub-surface of sheet steel. The formation and morphology of the oxides of alloying elements in High Strength Interstitial Free (HS-IF), Dual Phase (DP) and Transformation-Induced Plasticity (TRIP) steels are strongly influenced by the furnace dew point, and the presence of specific oxide may result in surface defects and bare areas on galvanized sheet products. The present contribution reviews the progress made recently in understanding the selective formation of surface and subsurface oxides during annealing in hot dip galvanizing and conventional continuous annealing lines. It is believed that the surface and sub-surface composition and microstructure have a pronounced influence on galvanized sheet product surface quality. In the present study, it is shown that the understanding of the relevant phenomena requires a combination of precise laboratory-scale simulations of the relevant technological processes and the use of advanced surface analytical tools.

Effects of Silicon on Galvanizing Coating Characteristics in Dual Phase High Strength Steel (복합조직형 고강도 용융아연 도금강판의 도금특성에 미치는 강중 Si의 영향)

  • Jeon, Sun-Ho;Chin, Kwang-Geun;Shin, Kwang-Soo;Lee, Joon-Ho;Sohn, Ho-Sang
    • Korean Journal of Metals and Materials
    • /
    • v.47 no.7
    • /
    • pp.423-432
    • /
    • 2009
  • In the galvanizing coating process, the effects of the silicon content on the coatability and wettability of molten zinc were investigated on Dual-Phase High Strength Steels (DP-HSS) with various Si contents using the galvanizing simulator and dynamic reactive wetting systems. DP-HSS showed good coatability and a well-developed inhibition layer in the range of Si content below 0.5 wt%. Good coatability was the results of the mixed oxide $Mn_{2}SiO_{4}$, being formed by the selective oxidation on the surface, with a low contact angle in molten zinc and a large fraction of oxide free surface that provided a sufficient site for the molten zinc to wet and react with the substrate. On the other hand, with more than 0.5 wt%, DP-HSS exhibited poor coatability and an irregularly developed inhibition layer. The poor coatability was due to the poor wettability that resulted from the development of network-type layers of amorphous ${SiO}_{2}$, leading to a high contact angle in molten zinc, on the surface.

Performance of V2O5-TiO2 Catalyst Prepared by Various Methods for Removal of Hydrogen Sulfide Emitted from Steel Smelting Process (다양한 제조방법으로 제조된 V2O5-TiO2 촉매를 이용한 제련공정에서 발생한 황화수소 제거능 비교)

  • Kim, Moon il
    • Journal of Environmental Science International
    • /
    • v.30 no.6
    • /
    • pp.501-505
    • /
    • 2021
  • V2O5-TiO2 catalysts were prepared by various methods. V2O5-TiO2 were prepared by sol-gel method with different drying conditions (aerogel and xerogel), and V2O5 supported on TiO2 obtained by sol-gel method with precipitation-deposition method and impregnation method. The performance of the V2O5-TiO2 catalysts was investigated for the selective oxidation of hydrogen sulfide in the stream containing both ammonia and excess water. All the catalysts showed good dispersion of vanadium and they had high H2S conversion with no or little production of sulfur dioxide. The V2O5-TiO2 aerogel catalyst prepared by sol-gel method with drying under super critical condition had the highest surface area which led to better catalytic activity compared to those by other synthesis methods.

Selective Atomic Layer Deposition of Co Thin Films Using Co(EtCp)2 Precursor (Co(EtCp)2프리커서를 사용한 Co 박막의 선택적 원자층 증착)

  • Sujeong Kim;Yong Tae Kim;Jaeyeong Heo
    • Korean Journal of Materials Research
    • /
    • v.34 no.3
    • /
    • pp.163-169
    • /
    • 2024
  • As the limitations of Moore's Law become evident, there has been growing interest in advanced packaging technologies. Among various 3D packaging techniques, Cu-SiO2 hybrid bonding has gained attention in heterogeneous devices. However, certain issues, such as its high-temperature processing conditions and copper oxidation, can affect electrical properties and mechanical reliability. Therefore, we studied depositing only a heterometal on top of the Cu in Cu-SiO2 composite substrates to prevent copper surface oxidation and to lower bonding process temperature. The heterometal needs to be deposited as an ultra-thin layer of less than 10 nm, for copper diffusion. We established the process conditions for depositing a Co film using a Co(EtCp)2 precursor and utilizing plasma-enhanced atomic layer deposition (PEALD), which allows for precise atomic level thickness control. In addition, we attempted to use a growth inhibitor by growing a self-assembled monolayer (SAM) material, octadecyltrichlorosilane (ODTS), on a SiO2 substrate to selectively suppress the growth of Co film. We compared the growth behavior of the Co film under various PEALD process conditions and examined their selectivity based on the ODTS growth time.

The Simulation of Selective Emitter Formation for Crystalline Silicon Solar Cell by Growing Thermal Oxide (Thermal oxidation을 이용한 결정질 실리콘 태양전지의 selective emitter 형성 방법에 대한 simulation)

  • Choe, Yonghyon;Son, Hyukjoo;Lee, Inji;Park, Jeagun;Park, Yonghwan
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2010.11a
    • /
    • pp.53.1-53.1
    • /
    • 2010
  • 결정질 실리콘 태양전지의 효율을 향상시키기 위하여 수광면에 서로 다른 도핑농도를 가지는 고농도 도핑영역과 저농도 도핑영역으로 이루어진 emitter를 형성하는 것이 요구되며 이를 selective emitter라 칭한다. Selective emitter를 형성하면 고농도 도핑영역에서 금속전극과 저항 접촉이 잘 형성되기 때문에 직렬 저항이 최소화되고 저농도 도핑영역에서는 전하 재결합의 감소로 인하여 태양전지의 변환효율이 상승하는 이점이 있다. Selective emitter의 형성방법은 이미 다양한 방법이 제안되고 있으나, 본 연구에서는 기존에 제시된 방법과는 다르게 열산화 시 dopant redistribution에 의한 Boron depletion 현상을 이용하여 selective emitter를 형성하는 방법을 제안하였고, 이를 Simulation을 통하여 검증하였다. 초기 emitter 확산 후 junction depth는 0.478um, 면저항은 $104.2{\Omega}/sq.$ 이었으며, nitride masking layer 두께는 0.3um로 설정하였다. $1100^{\circ}C$에서 30분간 습식산화 공정을 거친 후 nitride mask가 있는 부분의 junction depth는 1.48um, 면저항은 $89.1{\Omega}/sq$의 값을 보였고, 산화막이 형성된 부분의 junction depth는 1.16um, 면저항은 $261.8{\Omega}/sq$의 값을 보였다. 위 조건의 구조를 가진 태양전지의 변환 효율은 19.28%의 값을 나타내었고 Voc, Jsc 및 fill factor는 각각 645.08mV, $36.26mA/cm^2$, 82.42%의 값을 보였다. 한편 일반적인 구조로 설정한 태양전지의 변환 효율, Voc, Isc 및 fill factor는 각각 18.73%, 644.86mV, $36.26mA/cm^2$, 80.09%의 값을 보였다.

  • PDF