• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.55-58
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• 2003

FeMn based spin valves often consist of a NiFe/FeMn/NiFe trilayer structure. We have investigated the evolution of exchange bias at the bottom and top interfaces in the NiFe(5nm)/FeMn(x)/NiFe(5nm) trilayer structure as a function of FeMn thickness in the range 3 nm to 30 nm. The XRD results indicate (111) textured growth for NiFe and FeMn layers. The magnetization studies using VSM show two hysteresis loops corresponding to the bottom NiFe seed layer and top NiFe layers with greater bias for the bottom NiFe layer, for FeMn thickness equal to and above 5 nm. The larger exchange bias for the bottom seed layer is confirmed by the surface sensitive MOKE hysteresis loop measurements which show gradual weakening of the MOKE hysteresis loop for the bottom NiFe layer with increasing FeMn thickness. The observed large exchange bias in a spin valve structure is usually attributed to the pinning NiFe layer on top of the FeMn layer, even when a NiFe seed layer of a few nm thickness is present, whereas, in reality it may be arising from the bottom seed layer, as shown by the present study.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.76.2-76.2
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• 2010

질산 용액을 이용한 처리를 통해서 실리콘 웨이퍼 위에 누설 전류가 thermal oxidation 방법과 비슷한 수준의 얇은 실리콘 산화막을 형성할 수 있다. 이러한 처리 방법은 thermal oxidation에 비해서 낮은 온도에서 공정이 가능하다는 장점을 가진다. 이 때 질산 용액으로 68 wt% $HNO_3$을 쓰는데, 이 용액에만 넣었을 때에는 실리콘 산화막이 어느 정도 두께 이상은 성장하지 않는 단점이 있다. 그렇기 때문에 실리콘 웨이퍼를 68 wt% $HNO_3$에 넣기 전에 seed layer 산화막을 형성 시킨다. 본 연구에서는 p-type 웨이퍼를 phosphorus로 도핑해서 에미터를 형성 시킨 후에 seed layer를 형성 시키고 68 wt% $HNO_3$를 이용해서 에미터 위의 실리콘 산화막을 성장 시켰다. 이 때 보다 더 효과적인 seed layer를 형성 시키는 용액을 찾아서 실험하였다. 40 wt% $HNO_3$, $H_2SO_4-H_2O_2$, HCl-$H_2O_2$ 용액에 웨이퍼를 10분 동안 담그는 것을 통해서 seed layer를 형성하고, 이를 $121^{\circ}C$인 68 wt% $HNO_3$에 넣어서 실리콘 산화막을 성장시켰다. 이렇게 형성된 실리콘 산화막의 특성은 엘립소미터, I-V 측정 장치, QSSPC를 통해서 알아보았다.

• 대한금속재료학회지
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• 제48권1호
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• pp.90-100
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• 2010

Micro-conductive patterns were microfabricated on an insulating substrate ($SiO_2$) surface by a selective electroless nickel plating process in order to investigate the formation of seed layers. To fabricate micro-conductive patterns, a thin layer of metal (Cu.Cr) was deposited in the desired micropattern using laser-induced forward transfer (LIFT). and above this layer, a second layer was plated by selective electroless plating. The LIFT process. which was carried out in multi-scan mode, was used to fabricate micro-conductive patterns via electroless nickel plating. This method helps to improve the deposition process for forming seed patterns on the insulating substrate surface and the electrical conductivity of the resulting patterns. This study analyzes the effect of seed pattern formation by LIFT and key parameters in electroless nickel plating during micro-conductive pattern fabrication. The effects of the process variables on the cross-sectional shape and surface quality of the deposited patterns are examined using field emission scanning electron microscopy (FE-SEM) and an optical microscope.

• Journal of Ginseng Research
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• 제16권1호
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• pp.37-43
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• 1992

Structural changes of the endosperm of Panax ginseng C.A. Meyer from fertilization to germination were investigated by light microscope. The endosperm of the ginseng seed is cellular type. Since endosperm cells adjacent embryo continuously breakdown and disappear with the elongation of embryo, the real of endosperm is gradually decreased. As the anatropous ovules of immature seed with green seed coat developes more and more, ovary cells adjacent ovary cavity become abundant by the periclinal division, their size is decreased, hypotrophy of cell wall discern, and they are gradually differentiated in seed coat. Though embryo responds strongly to basic dye at the stage of completion of endosperm formation, tissue of endosperm responds to acidic dye positively Cell wall of embryo and endosperm are composed of primary cell wall not lignified. Endosperm cells adjacent embryo begin to breakdown in the endosperm tissue of indehiscent seed before the beginning of the after-ripening. Dehiscent seed of which seed coat is opened through after-ripening represent the form as a seedling in the result of embryo developments with the formation of organs; radicle, cotyledon, plumule. Umbilifom layer represents strong positive response to the toluidine blue and the basic function. Umbiliform layer that endosperm cells breakdown and disappear is observed clearly at the periphery of the embryo cotylemon, while slightly at the periphery of the radicle.

• Applied Biological Chemistry
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• 제34권1호
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• pp.1-7
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• 1991

해바라기씨 단백질에서 plastein을 합성 이용하기 위해 먼저 해바라기씨를 pepsin을 이용해 가수분해하는 최적 조건과, plastein을 합성하는 최적 조건을 구하였다. 최적 가수분해 조건은 pH 1.5, $45^{\circ}C$, 2% 기질농도와 2% pepsin 농도에서 24시간 반응시키는 것이었고 plastein 합성의 최적조건은 기질농도 50%, pH 4.5, $50^{\circ}C$, 0.25% pepsin 농도에서 18시간 반응시키는 것이었다. Plastein의 생성을 확인하기 위해 thin layer chromatography를 실시한 결과 해바라기씨 농축가수분해물의 TLC pattern과 plastein의 TLC pattern이 하나의 spot를 제외하고는 다르게 나타났는데 이는 plastein과 기질이 다른 것임을 표시하는 것이었다.

• Preventive Nutrition and Food Science
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• 제20권3호
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• pp.162-168
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• 2015

Lotus (Nelumbo nucifera Gaertn.) seed is widely used as a traditional medicine in countries of Asia. Among many functions of the lotus seed, one interesting activity is its skin protection from the sunlight and scar. In this study, we focused on the skin protective property of lotus seed tea against ultraviolet B (UVB) irradiation. Two groups of a hairless mouse model, water as control (water group) and lotus seed tea (LST group), were administrated a fluid drink water for six months. After 6 month of administration, UVB exposure was carried out to both groups for another 3 months. During and after the administration, the skin moisture content and the morphological and histopathological analyses through biopsy were carried out. Prior to UVB irradiation, no significant difference was discovered in the skin moisture content for the water group and LST group (P<0.05). However, drastic changes were observed after the UVB treatment. The LST group showed a clear evidence of skin protection compared to the control group (P<0.05). The moisture content, epidermal and horny layer thickness, and protein carbonyl values all revealed that the intake of the lotus seed tea enhanced protection against UVB exposure. As a result, the long-term intake of the lotus seed tea showed the effect of preventing loss of skin moisture, mitigating the formation of abnormal keratinocytes, and contributing to protein oxidation inhibition.

• Journal of Plant Biology
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• 제35권1호
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• pp.45-51
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• 1992

인삼(Panax ginseng C.A. Meyer)의 채종전 홍숙 종자로부터 채종 후 미개갑 종자까지 단계별 배발달에 따른 배유세포내 단백과립의 변화상을 확인하여 다음과 같은 결과를 얻었다. 홍숙 초기단계의 종자의 배유세포에는 구형의 스페로솜이 산재하였으며, 액포내에는 저장 단백질이 축적되어 단백과립을 형성하였다. 홍숙 말기단계의 종자의 배유세포내 세포질은 대부분 스페로솜과 단백과립으로 충만하였고, 세포소기관은 거의 관찰할 수 없었으며, 단백과립은 전자밀도가 높은 무정형의 함유물을 가지고 있는 것과 균일한 단백질 기질로만 이루어져 있는 것 등으로 크게 구분되었다. 채종 후 후숙 처리를 하지 않은 미개갑 종자에서, 배유세포내 단백과립은 구상체(globoid), 단백질 결정체 등을 함유하고 있었고, 구상체는 다양한 형태의 전자밀도가 높은 물질을 가지고 있었다. 제형층은 배와 배유조직 사이에 위치하였으며, 이와 인접하여 배유세포벽의 분해양상과 셀루로우즈 미세섬유상이 관찰되었다. 제형층은 lipid body와 분해된 배유세포의 잔유물로 이루어져 있었다. 제형층과 인접한 배유세포의 단백과립은 퇴행성 변화를 나타내었고, 이로 인해 단백질 기질은 전자밀도가 점진적으로 낮아지는 결과를 얻었다.

• 센서학회지
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• 제29권6호
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• pp.420-426
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• 2020

A metal oxide semiconductor gas sensor is operated by measuring the changes in resistance that occur on the surface of nanostructures for gas detection. ZnO, which is an n-type metal oxide semiconductor, is widely used as a gas sensor material owing to its high sensitivity. Various ZnO nanostructures in gas sensors have been studied with the aim of improving surface reactions. In the present study, the sol-gel and vapor phase growth techniques were used to fabricate nanostructures to improve the sensitivity, response, and recovery rate for gas sensing. The sol-gel method was used to synthesize SnO₂ nanoparticles, which were used as the seed layer. The nanoparticles size was controlled by regulating the process parameters of the solution, such as the pH of the solution, the type and amount of solvent. As a result, the SnO₂ seed layer suppressed the aggregation of the nanostructures, thereby interrupting gas diffusion. The ZnO nanostructures with a sol-gel processed SnO₂ seed layer had larger specific surface area and high sensitivity. The gas response and recovery rate were 1-7 min faster than the gas sensor without the sol-gel process. The gas response increased 4-24 times compared to that of the gas sensor without the sol-gel method.

• 한국재료학회지
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• 제22권7호
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• pp.335-341
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• 2012

Recently, the demand for the miniaturization of printed circuit boards has been increasing, as electronic devices have been sharply downsized. Conventional multi-layered PCBs are limited in terms their use with higher packaging densities. Therefore, a build-up process has been adopted as a new multi-layered PCB manufacturing process. In this process, via-holes are used to connect each conductive layer. After the connection of the interlayers created by electro copper plating, the via-holes are filled with a conductive paste. In this study, a desmear treatment, electroless plating and electroplating were carried out to investigate the optimum processing conditions for Cu via filling on a PCB. The desmear treatment involved swelling, etching, reduction, and an acid dip. A seed layer was formed on the via surface by electroless Cu plating. For Cu via filling, the electroplating of Cu from an acid sulfate bath containing typical additives such as PEG(polyethylene glycol), chloride ions, bis-(3-sodiumsulfopropyl disulfide) (SPS), and Janus Green B(JGB) was carried out. The desmear treatment clearly removes laser drilling residue and improves the surface roughness, which is necessary to ensure good adhesion of the Cu. A homogeneous and thick Cu seed layer was deposited on the samples after the desmear treatment. The 2,2'-Dipyridyl additive significantly improves the seed layer quality. SPS, PEG, and JGB additives are necessary to ensure defect-free bottom-up super filling.