• Journal of the Microelectronics and Packaging Society
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• v.28 no.4
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• pp.41-45
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• 2021

In this study, in order to secure the high reliability of the memristor, we adopted a patterned lithium filament seed layer as the main agent for resistive switching (RS) characteristic on the 30 nm thick ZrO₂ thin film at the device manufacturing stage. Lithium filament seed layer with a thickness of 5 nm and an area of 5 ㎛ × 5 ㎛ were formed on the ZrO₂ thin film, and various electrode areas were applied to investigate the effect of capacitance on filament type memristive behavior in the parallel memristive circuit of memristor and capacitor. The RS characteristics were measured in the samples before and after 250℃ post-annealing for lithium metal diffusion. In the case of conductive filaments formed by thermal diffusion (post-annealed sample), it was not available to control the filament by applying voltage, and the other hand, the as-deposited sample showed the reversible RS characteristics by the formation and rupture of filaments. Finally, via the comparison of the RS characteristics according to the electrode area, it was confirmed that capacitance is an important factor for the formation and rupture of filaments.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.153-156
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• 2003

The multi-layer oxide buffer layer for the coated conductor was deposited on biaxially textured Ni substrates using pulsed laser deposition. Oxygen partial pressure, 4％$H_2$/Ar partial pressure, and deposition temperature were deposition variables investigated to find the optimum deposition conditions. $Y_2$O$_3$seed layer was deposited epitaxially on metal substrate. The full buffer architecture of $Y_2$O$_3$/YSZ/CeO$_2$was successfully prepared on metal substrate.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.94-103
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• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.28.1-28.1
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• 2009

The superior properties of ZnO such as high exciton binding energy, high thermal and chemical stability, low growth temperature and possibility of wet etching process in ZnO have great interest for applications ranging from optoelectronics to chemical sensor. Particularly, vertically well-aligned ZnO nanorods on large areas with good optical and structural properties are of special interest for the fabrication of electronic and optical nanodevices. Currently, low-dimensional ZnO is synthesized by metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), thermal evaporation, and sol.gel growth. Recently, our group has been reported about achievement the growth of Ga-doped ZnO nanorods using ZnO seed layer on p-type Si substrate by RF magnetron sputtering system at high rf power and high growth temperature. However, the crystallinity of nanorods deteriorates due to lattice mismatch between nanorods and Si substrate. Also, in the growth of oxide using sputtering, the oxygen flow ratio relative to argon gas flow is an important growth parameter and significantly affects the structural properties. In this study, Phosphorus (P) doped ZnO nanorods were grown on c-sapphire substrates without seed layer by radio frequency magnetron sputtering with various argon/oxygen gas ratios. The layer change films into nanorods with decreasing oxygen partial pressure. The diameter and length of vertically well-aligned on the c-sapphire substrate are in the range of 51-103 nm and about 725 nm, respectively. The photoluminescence spectra of the nanorods are dominated by intense near band-edge emission with weak deep-level emission.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.2
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• pp.65-73
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• 2008

Security layer of the Cdma2000 1x EV-DO is currently completing standard (C.S0024-A v2.0). Accordingly, a hardware security devices, that allows to implementation requirement of the security layer described in standard document, is required to apply security function about data transferred between AT and AN of then Cdma2000 1x EV-DO environment. This paper represents design of hardware device providing EV-DO security with simulation of the security layer protocol via the FPGA platform. The SHA-1 hash algorithm for certification and service of packet data, and the AES, SEED, ARIA algorithms for data encryption are equip in this device. And paper represents implementation of hardware that applies optionally certification and encryption function after executing key-switch using key-switching algorithm.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.41 no.spc1
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• pp.145-165
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• 1996

Amaranth(Amaranthus spp. L.) and quinoa (Chenpodium quinoa Willd.) are old crops from South, Central America and Central Asia and their grains have been identified as very promising food crops because of their exceptional nutritive value. Squalene is an important ingredient in skin cosmetics and computer disc lubricants as well as bioactive materials such as inhibition of fungal and mammalian sterol biosynthesis, antitumor, anticancer, and immunomodulation. Amaranth has a component called squalene (2,6,10,15,19,23-hexamethyl-2,6,10,14,22-tetraco-sahexaene) about 1/300 of the seed and $5\~8\%$ of its seed oil. Oil and squalene content in amaranth seed were different for the species investigated. Squalene content in seed oil also increased by $15.5\%$ due to puffing and from 6.96 to $8.01\%$ by refining and bleaching. Saponin concentrations in quinoa seed ranged 0.01 to $5.6\%$. Saponins are located in the outer layers of quinoa grain. These layers include the perianth, pericarp, a seed coat layer, and a cuticle like structure. Oleanane-type triterpenes saponins are of great interest because of their diverse pharmacological properties, for instance, anti-inflammatory, antibiotic, contraceptive, and cholesterol-lowering effects. It is known that quinoa contains a number of structurally diverse saponins including the aglycones, oleanolic acid, hederagenin, and phytolaccagenic acid, which are new potential in gredient for pharmacological properties. It is likely that these saponin levels will be considerably affected by genetic, agronomic and environmental factors as well as by processing. With the current enhanced public interest in health and nutrition amaranth and quinoa will most likely remain in the immediate future within the realm of exotic health foods until such time as agricultural production meets the quantities and qualify required by industrial food manufacturers.

• Current Research on Agriculture and Life Sciences
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• v.17
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• pp.53-57
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• 1999

The experiments were conducted to determine the factors such as light and darkness, phytohormone and seed coat, influencing on seed germination of Bidens tripartita L. and B. frondosa. The seeds of both species were germinated when seed coat was damaged and weakened. $GA_3$ and BA stimulated germination of both species but ABA and IAA had no effect on germination of them, which ranged 50.0% to 80.0%. In B. forndosa, when inner layer of seed coat was removed, germination was highly promoted up to 96.7% compared with 10.0% germination rate in another treatments.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.222-222
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• 2010

III-V반도체 태양전지는 다양한 에너지 밴드갭을 만들 수 있으며 다중접합 태양전지의 경우 흡수 전류가 커져 효율이 증가한다. 태양전지의 효율의 증가는 태양광 발전시스템의 발전 단가를 낮추는 중요한 요인이다. 우리는 효율이 높은 III-V 태양전지를 제작하기 위해 일차적으로 Ge기판 위에 GaAs를 성장하고자 한다. Ge기판과 GaAs의 격자상수는 0.07%차이로 거의 일치하나 물질의 열팽창계수가 다르고 비극성인 Ge기판 위에 극성인 GaAs를 성장 시 위상불일치(Anti Phase Domain) 나타난다. 위상불일치 현상을 줄이기 위해 성장 시 온도와 V/III비율, 성장두께 등을 달리하여 성장한다. 표면의 상태가 좋아질수록 위상불일치 현상이 작으며 단일성장 보다 두 단계 과정으로 성장 했을 때 표면의 상태가 더 좋은 결과를 바탕으로[1], 20nm 이하로 얇게 seed층을 성장하고 그 위에 두꺼운 버퍼층을 성장하는 두 단계로 진행하였다. seed층의 성장온도는 $400{\sim}550^{\circ}C$, V/III 비율을 3.5~30으로 다양하게 바꿔가면서 표면의 상태를 비교하였다. 이때 버퍼층의 성장 온도와 V/III 비율은 $680^{\circ}C$, 192으로 일정하게 유지하였다. 표면은 SEM과 AFM을 통해 분석하였으며 결정질의 상태는 XRD 장비(Panalytical사)로 분석하고 광학적 특성은 LTPL(Accent Optical Technologies사)로 측정하였다. 실험의 결과는 seed층의 온도가 낮고 V/III 비율이 낮으며 성장률이 높았을 때 표면상태가 좋은 반면 버퍼층은 온도가 높고 V/III 비율이 높으며 성장률이 낮을 때 표면상태가 좋았다. seed층을 $450^{\circ}C$온도에서 V/III 비율이 3.5이고 성장률이 버퍼층에 비교하여 크게 하여 성장 했을 때 표면 거칠기가 3.75nm로 작아 표면의 상태가 좋음을 확인할 수 있었다. 두 단계 성장 시 표면의 상태는 seed층의 조건에 따라 결정됨을 알 수 있었다. 표면상태가 좋았을 때 결정상태 역시 좋았으며 성장률이 바뀜에 따라 반치폭이 42~45 arcsec의 값을 나타내었다. 광학적 특성은 10K에서 1.1512eV 밴드갭 에너지를 가지고 있어 양질의 GaAs가 성장됨을 알 수 있다.

• Proceedings of the Korean Society for Agricultural Machinery Conference
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• 2003.02a
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• pp.366-371
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• 2003

박 종자의 경우 CGMMV(Cucumber Green Mosaic Mottle Virus:오이녹반모자이크바이러스)에 감염되면 성체의 형태에서 농약으로 효과적인 방제가 불가능하다고 알려져 있다. 최근 국내외 종자회사에서 이병 된 종자를 판매하여 농가와 종자회사에 큰 타격을 입힌 것이 계기가 되어 바이러스 방제에 대한 효과적인 방제방법의 연구에 관심이 집중되고 있다. (중략)