• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.330-331
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• 2006

Recently, plasma display panels (PDPs) are highlighted for the flat type display device. Therefore, much attention has been paid to secondary electron emission coefficient of the electrode protective material of PDPs. As PDPs is developing, the concern about secondary electron emission coefficient ($\gamma$) which is related with PDPs electrode protection material is increasing continually. So the concern about the way to how to measure secondary electron emission coefficient is on the rise. At present, the way to how to measure secondary electron emission coefficient is developed by some research groups, which is giving some research part's advance help. In this research, we have studied how to measure secondary electron emission coefficient which is related with various thin films more conveniently than previous measurement method. We studied the method of measurement of secondary electron emission coefficient (${\gamma}$) of amorphous silicon films by using Paschen's curve.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.483-483
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• 2012

Recently, nonthermal bioplasma has been attracted by researchers due to their potentials to modulate cellular functions resulting in changes of biomolecular electron band structures as well as cell morphologies. We have investigated the secondary electron emission characteristics from the surface of the erythrocyte, i.e., red blood cell (RBC) with and without the nonthermal bioplasma treatment in morphological and biomolecular aspects. The morphologies have been controlled by osmotic pressure and biomolecular structures were changed by well known reactive oxygen species. Ion-induced secondary electron emission coefficient have been measured by using gamma-focused ion beam (${\gamma}$-FIB) system, based on the quantum mechanical Auger neutralization theory. Our result suggests that the nonthermal bioplasma treatment on biological cells could result in change of the secondary electron emission coefficient characterizing the biomolecular valence band electron energy structures caused by the cell morphologies as well as its surface charge distributions.

• Journal of Information Display
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• v.3 no.1
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• pp.17-21
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• 2002

Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.273-277
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• 2015

We investigated secondary electron emission characteristics of ZnO thin films prepared by pulsed laser deposition method with respect to the ambient oxygen pressure and the substrate temperature during the deposition. X-ray diffraction, UV-Vis spectrometry, atomic force microscopy, and ${\gamma}$-FIB were used to examine the structural, optical transmission, surface morphology, and secondary electron emission properties of the films, respectively. The secondary electron emission coefficient of the ZnO films increases as the O/Zn ratio of the films increases which was thought to result from either the ambient oxygen pressure increase or the substrate temperature decrease and as the grain size of the films decreases. It was confirmed that ZnO has better secondary electron emission characteristics than those of MgO, which is currently widely used as a material for PDP protecting layers.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.221-223
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• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.