• Proceedings of the Korean Vacuum Society Conference
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• 2004.02a
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• pp.137-137
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• 2004

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2001.11a
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• pp.35-35
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• 2001

agnesium Oxide (MgO) with a NaCI structure is well known to exhibit high secondary electron emission, excellent high temperature chemical stability, high thermal conductance and electrical insulating properties. For these reason MgO films have been widely used for a buffer layer of high $T_c$ superconducting and a protective layer for AC-plasma display panels to improve discharge characteristics and panel lifetime. Up to now MgO films have been synthesized by lE-beam evaporation, Molecular Beam Epitaxy (MBE) and Metalorganic Chemical Vapor Deposition (MOCVD), however there have been some limitations such as low film density and micro-cracks in films. Therefore magnetron sputtering process were emerged as predominant method to synthesis high density MgO films. In previous works, we designed and manufactured unbalanced magnetron source with high power density for the deposition of high quality MgO films. The magnetron discharges were sustained at the pressure of O.lmtorr with power density of $110W/\textrm{cm}^2$ and the maximum deposition rate was measured at $2.8\mu\textrm{m}/min$ for Cu films. In this study, the syntheses of MgO films were carried out by unbalanced magnetron sputtering with various $O_2$ partial pressure and specially target power densities, duty cycles and frequency using pulsed DC power supply. And also we investigated the plasma states with various $O_2$ partial pressure and pulsed DC conditions by Optical Emission Spectroscopy (OES). In order to confirm the relationships between plasma states and film properties such as microstructure and secondary electron emission coefficient were analyzed by X-Ray Diffraction(XRD), Transmission Electron Microscopy(TEM) and ${\gamma}-Focused$ Ion Beam (${\gamma}-FIB$).

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.117-118
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• 2000

The secondary electron emission coefficient ${\gamma}$ of MgO single crystals according to the gas mixture ratio of Xe to Ne have been investigated by ${\gamma}-focused$ ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest ${\gamma}$ from 0.09(0.03) up to 0.16(0.04), while from 0.07(0.02) to 0.15(0.03) for (200) and from 0.06(0.01) to 0.13(0.02) for (220) crystallinity for operating Ne (Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the ${\gamma}$ ranged from 0.03 up to 0.06 for Ne-Xe mixtures are much smaller than those of 0.09 up to 0.16 for pure Ne ions under accelerating voltage ranged from 50V to 200V.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.113-114
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• 2000

The secondary electron emission coefficient(${\gamma}$) of vacuum annealed MgO films has been investigated by ${\gamma}-focused$ ion beam(${\gamma}-FIB$) system. The vacuum annealed MgO films have been found to have higher ${\gamma}$ values from 0.053 up to 0.121 than those for as-deposited MgO films from 0.026 up to 0.062 for $Ne^+$ ion energies ranged from 50eV to 200eV. Also it is found that ${\gamma}$ for air hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.12
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• pp.2441-2445
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• 2009

The effects of Si -doped MgO have been investigated in order to improve the material properties of the MgO protective layer in plasma display panels. A small amount of Si is added to the MgO pellet while the MgO layer is being deposited by using an electron-beam evaporation method. Both the surface characteristics of the protecting layer and the electro-optical properties of 4 in. test panels are investigated, such as XRD patterns, SEM images, firing and sustain voltages, secondary electron emission coefficient($\gamma$), luminance, luminous efficacy and lifetime. The firing and sustain voltage are minimized when Si concentration is 0.038%, where the luminance and luminous efficacy increase up to 17% and 26% compared with that of the pure MgO film, separately, and lifetime also shows good characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 1997.07a
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• pp.169-172
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• 1997

MgO dielectric pprotection layer is ppreppared by R.F. reactive magnetron spputtering with Mg target under various conditions of spputtering ppressure, time and substrate tempperature. Discharge characteristics of ppDpp is also studied as a pparameter of MgO pprepparation conditions. As the working ppressure and substrate tempperature was increase, the discharge voltage was decreased. Two kinds of MgO ppreppared both spputtering and E-beam methods were stable after annealing at 35$0^{\circ}C$ for 120min. discharge voltage under 3 mixed gas(He+Xe0.2%+Ne30%) was V=130V, V=102V and ${\gamma}$ coefficient was twiced as much as that of dielectric layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.358-358
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• 2012

The application of BZO (Boron-doped Zinc Oxide) films use as the TCO(Transparent Conductive Oxide) material for display and solar cell industries, where the conductivity of the BZO films plays a critical role for improvement of cell performance. Thin BZO films are deposited on glass substrates by using RF sputter system. Then charging flow rates of O2 gas from zero to 10 sccm, thereby controlling the impurity concentration of BZO. BZO deposited on soda lime glass and RF power was 300 W, frequency was 13.56 MHz, and working pressure was $5.0{\times}10-6$ Torr. The Substrate and glass between distance 200 mm. We measured resistivity, conductivity, mobility by hall measurement system. Optical properties measured by photo voltaic device analysis system. We measured surface build according to oxygen flow rate from XPS (X-ray Photoelectron Spectroscopy) system. The profile of the energy distribution of the electrons emitted from BZO films by the Auger neutralization is measured and rescaled so that Auger self-convolution arises, revealing the detail structure of the valence band. It may be observed coefficient ${\gamma}$ of the secondary electron emission from BZO by using ${\gamma}$-FIB (Gamma-Focused Ion Beam) system. We observed the change in electrical conductivity by correlation of the valence band structure. Therefore one of the key issues in BZO films may be the valence band that detail structure dominates performance of solar cell devices. Demonstrating the secondary electron emission by the Auger neutralization of ions is useful for the determination of the characteristics of BZO films for solar cell and display developments.

• Transactions on Electrical and Electronic Materials
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• v.11 no.4
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• pp.186-189
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• 2010

Nano-sized MgO single crystal powders have recently been reported to emit ultraviolet by stimulation of electrons in a vacuum. In this study, nanocrystalline MgO powders were applied to a xenon plasma flat fluorescent lamp (FFL) for a liquid crystal display backlight to improve its emission efficiency through the extra ultraviolet from the nano-MgO crystals. For comparison, a MgO nano-thin film was applied directly on the phosphors inside a lamp panel through e-beam evaporation. Adding MgO nano-crystal powders to the phosphors improved the luminance and efficiency of FFLs by around 20% and MgO nano-crystal coverage of 40% of the phosphor provided the best FFL emission characteristics; however, application of MgO thin film to the phosphors degraded the emission characteristics, even compared to FFLs without MgO. This was due to insufficient ultraviolet stimulation of the phosphors and the crystallinity and low secondary electron coefficient of the MgO.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.6
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• pp.49-57
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• 2015

This paper presents the discharge characteristics and economic feasibility of a Dry $Air/O_2$ and a $N_2/O_2$ mixture gas in order to review $SF_6$ alternative. From AC discharge experiment in an quasi-uniform field, it was found that the optimal $N_2/O_2$ mixing ratio which breakdown voltage and surface flashover voltage were the highest was 70/30 and that the pressure dependence on the breakdown voltage was higher than that of the surface flashover voltage in the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas. The mixing ratio (70/30) and the tendency of the pressure dependence were described in detail based on physical factors (impact ionization coefficient, electron attachment coefficient, secondary electron emission coefficient) involved in discharge mechanism and a electron source, respectively. In addition, the performance insulation and the economic feasibility of the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas were discussed so that Dry $Air/O_2$ mixture gaswas more suitable than $N_2/O_2$ mixture gas to the $SF_6$ alternative.

• Journal of the Korean Vacuum Society
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• v.15 no.4
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• pp.395-403
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• 2006

It is known that $MgAl_2O_4$ has higher resistance to moisture than MgO, in humid ambient MgO is chemically unstable. It reacts very easily with moisture in the air. In this study, the characteristic of $MgAl_2O_4$ and $MgAl_2O_4/MgO$ layers as dielectric protection layers for AC- PDP (Plasma Display Panel) have been investigated and analysed in comparison for conventional MgO layers. MgO and $MgAl_2O_4$ films both with a thickness of $1000\AA$ and $MgAl_2O_4/MgO$ film with a thickness of $200/800\AA$ were grown on the Cu substrates using the electron beam evaporation. $1000\AA$ thick aluminium layers were deposited on the protective layers in order to avoid the charging effect of $Ga^+$ ion beam while the focused ion beam(FIB) is being used. We obtained sputtering yieds for the MgO, $MgAl_2O_4$ and $MgAl_2O_4/MgO$ films using the FIB system. $MgAl_2O_4/MgO$ protective layers have been found th show $24{\sim}30%$ lower sputtering yield values from 0.244 up to 0.357 than MgO layers with the values from 0.364 up to 0.449 for irradiated $Ga^+$ ion beam with energies ranged from 10 kV to 14 kV. And $MgAl_2O_4$ layers have been found to show lowest sputtering yield values from 0.88 up to 0.109. Secondary electron emission coefficient(g) using the ${\gamma}$- FIB. $MgAl_2O_4/MgO$ and MgO have been found to have similar g values from 0.09 up to 0.12 for indicated $Ne^+$ ion with energies ranged from 50 V to 200 V. Observed images for the surfaces of MgO and $MgAl_2O_4/MgO$ protective layers, after discharge degradation process for 72 hours by SEM and AFM. It is found that $MgAl_2O_4/MgO$ protective layer has superior hardness and degradation resistance properties to MgO protective layer.