• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.518-521
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• 2004

The degradation characteristics of MgO protective layer and phosphors have been investigated in terms of the ion-induced secondary electron emission coefficient ${\gamma}$ and static margin of discharge voltages, respectively, in this experiment. The ion-induced secondary electron emission coefficients ${\gamma}$ for the degraded MgO protective layer and phosphors have been studied by ${\gamma}$ -focused ion beam system. The energy of Ne+ ions used is from 80 eV to 200 eV in this experiment. The degraded MgO and phosphor layers are found to have higher ${\gamma}$ than that of normal ones without degradations or aged one. Also, the static margin of discharge voltages for test panels with degraded MgO protective layer and phosphors been found to be seriously decreased in comparison with those of normal ones without degradations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.148-151
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• 2000

$Mg_{2-2x}Ti_xO_2$ films were prepared by e-beam evaporation method to be used as possible substitutes for the conventional MgO protective layer. The oxygen content in the films and in turn, the ratio of metal to oxygen gradually increased with increasing the $TiO_2$ content in the starting materials. The pure MgO films exhibited the crystallinity with strong (111) orientation. The $Mg_{2-2x}Ti_xO_2$ films, however, had the crystallinity with (311) preferred orientation. When the $[TiO_2/(MgO+TiO_2)]$ ratios of 0.1 and 0.15 were used, the deposited films exhibited the secondary electron emission yields improved by 50% compared to that of the conventional MgO protective layer, which resulted in reduction in discharge voltage by 12%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.145-147
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• 2000

The secondary electron emission coefficient y of MgO single crystal according to the gas mix-ture ratio of Xe, $N_2$ to Ne have been investigated by $\gamma$-focused ion beam system. It is found that the MgO single crystals of (111) crystallinity has the highest $\gamma$ for operating Ne(Xe) ions ranging from 50eV to 200eV throughout this experiment. And it is found that the $\gamma$ for gas mixtures are much smaller than pure Ne ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.108-112
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• 2002

We investigated the secondary electron emission characteristics of MgO layer used as the protecting material in a.c. plasma display panel(a.c.-PDPs) using a pulsed ion beam technique, where the surface charging can be effectively suppressed during the measurement. The measurement of the secondary electron emission coefficients ($\gamma$) on the surface of $SiO_2$ was carried out and then, it was found that the yields were dependent on incident ion energies. In addition, it was clearly demonstrated that the sputtering on MgO surface leads to lower yields, which suggests that the surface plays a key role on the operating conditions, such as life time, fast response, and etc.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.169-172
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• 2009

We developed ultra-accelerated quantum chemical molecular dynamics and characterization simulators for study and design of plasma display panel (PDP) related materials. By use of these simulators, realistic structure of PDP materials is drawn on the computer. Furthermore, based on the structures, various properties such as secondary electron emission coefficient are successfully evaluated. In this report, we will discuss the theoretical secondary electron emission coefficient for several protecting layer materials and the effect of surface structure on the properties based on the result of atomistic simulations.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.265-272
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• 2000

In this paper the corona discharge in SF$_{6}$ gas used as insulating material in lots o high voltage equipment, is simulated by finite element method with Flux-Corrected Transport(FCT) method. By application of proposed method the negative corona discharge characteristics in needle to plane electrode is analyzed with time step. For the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as the accuracy of analysis the secondary electron emission by photon and ion are also considered as well as townsend first ionization and electron attachment. The calculated results show that the electric field intensity between anode and ion group is decreased as times go-by according to field distortion by those space charge. Accordingly the electron density is decreased strongly by the attatchment effect of SF6 gas so that the corona discharge becomes extinguished abruptly.y.