• Title/Summary/Keyword: Secondary electron emission

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Measurement of Secondary Electron Emission Coefficient on Deposition Time of the Silicon Thin Films (실리콘박막의 증착시간에 따른 감마계수 측정법 개발)

  • Lee, Jung-Hui;Choi, Byoung-Jung;Yang, Sung-Chae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.330-331
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    • 2006
  • Recently, plasma display panels (PDPs) are highlighted for the flat type display device. Therefore, much attention has been paid to secondary electron emission coefficient of the electrode protective material of PDPs. As PDPs is developing, the concern about secondary electron emission coefficient ($\gamma$) which is related with PDPs electrode protection material is increasing continually. So the concern about the way to how to measure secondary electron emission coefficient is on the rise. At present, the way to how to measure secondary electron emission coefficient is developed by some research groups, which is giving some research part's advance help. In this research, we have studied how to measure secondary electron emission coefficient which is related with various thin films more conveniently than previous measurement method. We studied the method of measurement of secondary electron emission coefficient (${\gamma}$) of amorphous silicon films by using Paschen's curve.

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Effect of Secondary Electron Emission on the Glow Discharges with Different Electrode Gaps (서로 다른 전극간격에서 이차전자 방출이 글로우 방전에 미치는 영향에 관한 연구)

  • Seo, Jeong-Hyun;Kang, Kyung-Doo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.4
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    • pp.777-782
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    • 2009
  • In this paper, the effect of the secondary electron emission coefficient of Xe ion on glow discharge was examined by ID numerical simulation. The simulation was performed for two distinct structures, short and long gaps. The features of the glow discharges in the both structures, firing and sustain voltages, luminance, and efficiency, were analyzed at various secondary electron emission coefficient of Xe ion.

Secondary Electron Emission of ZnO Films

  • Choi, Jinsung;Lee, Sung Kwang;Choi, Joon Ho;Choi, Eun Ha;Jung, Ranju;Kim, Yunki
    • Applied Science and Convergence Technology
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    • v.24 no.6
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    • pp.273-277
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    • 2015
  • We investigated secondary electron emission characteristics of ZnO thin films prepared by pulsed laser deposition method with respect to the ambient oxygen pressure and the substrate temperature during the deposition. X-ray diffraction, UV-Vis spectrometry, atomic force microscopy, and ${\gamma}$-FIB were used to examine the structural, optical transmission, surface morphology, and secondary electron emission properties of the films, respectively. The secondary electron emission coefficient of the ZnO films increases as the O/Zn ratio of the films increases which was thought to result from either the ambient oxygen pressure increase or the substrate temperature decrease and as the grain size of the films decreases. It was confirmed that ZnO has better secondary electron emission characteristics than those of MgO, which is currently widely used as a material for PDP protecting layers.

Measurement of Secondary Electron Emission Coefficient and Bimolecular Valence Band Energy Structure of Erythrocyte with and Without Bioplasma Treatment

  • Lee, Jin-Young;Baik, Guyon;Choi, Eun-Ha
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.483-483
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    • 2012
  • Recently, nonthermal bioplasma has been attracted by researchers due to their potentials to modulate cellular functions resulting in changes of biomolecular electron band structures as well as cell morphologies. We have investigated the secondary electron emission characteristics from the surface of the erythrocyte, i.e., red blood cell (RBC) with and without the nonthermal bioplasma treatment in morphological and biomolecular aspects. The morphologies have been controlled by osmotic pressure and biomolecular structures were changed by well known reactive oxygen species. Ion-induced secondary electron emission coefficient have been measured by using gamma-focused ion beam (${\gamma}$-FIB) system, based on the quantum mechanical Auger neutralization theory. Our result suggests that the nonthermal bioplasma treatment on biological cells could result in change of the secondary electron emission coefficient characterizing the biomolecular valence band electron energy structures caused by the cell morphologies as well as its surface charge distributions.

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A Parametric Study on Secondary Electron Emission from MgO

  • Yoon, Sang-Hoon;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.953-956
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    • 2008
  • Using the theoretical model of Auger electron emission, effects of MgO properties which include band gap energy, escape probability, gas ion, and doping elements on the yield of secondary electron emission were examined. The results indicated that the band gap of MgO must be decreased and escape probability must be enhanced in order to increase the yield of secondary electrons from Xe ions and that may proved to be a critical for achieving high luminance efficacy in ac-PDPs.

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Characteristics of Secondary Electron Emission for Electron Beam Extraction (전자빔 인출을 위한 2차전자방출 특성 연구)

  • Woo, Sung-Hun;Lee, Hong-Sik;Lee, Kwang-Sik
    • Proceedings of the KIEE Conference
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    • 2003.10a
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    • pp.204-206
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    • 2003
  • Electron beam generator of cold cathode type has been developed for industrial application, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The characteristics of secondary electron emission are studied by comparing total cathode current with ion current.

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Effect of Secondary Electron Emission of Phosphor on the Plasma Display Panel Discharge

  • Song, Su-Bin;Park, Pil-Yong;Lee, Han-Yong;Sea, Jeong-Hyun;Kang, Kyung-Doo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.594-597
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    • 2002
  • We studied the effect of secondary electron emission from the back plate of AC-PDP, on the ramp waveform driving of the system, using two-dimensional PDP cell discharge simulator. It is found that the secondary electron emission from back plate plays a significant role in getting a stable weak discharge during the ramping up of X-Y electrode voltage. This is because grounded address electrode acts as a cathode during the setup of surface charge, and the secondary electron emission from phosphor in the back plate must be large enough to accumulate surface charges on the dielectric layers without strong plasma discharge. We have concluded that the secondary electron emission coefficient(${\gamma}$) of phosphor, besides MgO, must be known to understand the characteristics of the PDP system. A few suggestions for improvement of the system is also made and tested.

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Measurement of Ion-induced Secondary Electron Emission Yield of MgO Films by Pulsed Ion Beam Method

  • Lee, Sang-Kook;Kim, Jae-Hong;Lee, Ji-Hwa;Whang, Ki-Woong
    • Journal of Information Display
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    • v.3 no.1
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    • pp.17-21
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    • 2002
  • Measurement of the ion-induced secondary electron emission coefficient (${\gamma}_i$) for insulating films is hampered by an unavoidable charging problem. Here, we demonstrate that a pulsed ion beam technique is a viable solution to the problem, allowing for accurate measurement of ${\gamma}_i$ for insulating materials. To test the feasibility of the pulsed ion beam method, the secondary electron emission coefficient from n-Si(100) is measured and compared with the result from the conventional continuous beam method. It is found that the ${\gamma}_i$ from n-Si(100) by the ion pulsed beam measured to be 0.34, which is the same as that obtained by continuous ion beam. However, for the 1000 A $SiO_2$ films thermally deposited on Si substrate, the measurement of ${\gamma}_i$ could be carred out by the pulsed ion method, even though the continuous beam method faced charging problem. Thus, the pulsed ion beam is regarded to be one of the most suitable methods for measuring secondary electron coefficient for the surface of insulator materials without experiencing charging problem. In this report, the dependence of ${\gamma}_i$ on the kinetic energy of $He^+$ is presented for 1000 ${\AA}$ $SiO_2$ films. And the secondary electron emission coefficient of 1000 ${\AA}$ MgO e-beam-evaporated on $SiO_2/Si$ is obtained using the pulsing method for $He^+$ and $Ar^+$ with energy ranging from 50 to 200 eV, and then compared with those from the conventional continuous method.

STUDY ON THE ELECTRON GENERATION BY A MICRO-CHANNEL PLATE BASED ON EGS4 CALCULATIONS AND THE UNIVERSAL YIELD CURVE

  • Moon, B.S.;Han, S.H.;Kim, Y.K.;Chung, C.E.
    • Journal of Radiation Protection and Research
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    • v.26 no.3
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    • pp.177-181
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    • 2001
  • The conversion efficiency of a cesium iodine coated micro-channel plate is studied. We use the EGS4 code to transport photons and generated electrons until their energies become less than 1keV and 10keV respectively. Among the generated electrons, the emission from the secondary electrons located within the escape depth of 56nm from the photo-converter boundary is estimated by integrating the product of the secondary electrons with a probability depending only on their geometric locations. The secondary electron emission from the generated electrons of energy higher than 100eV is estimated by the 'universal yield curve'. The sum of these provides an estimate for the secondary electron yield and we show that results of applying this algorithm agree with known experimental results. Using this algorithm, we computed secondary electron emissions from a micro-channel plate used in a gas electron multiplier detector that is currently being developed at Korea Atomic Energy Research Institute.

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A flat thin display with RF electron generation

  • Dijk, R. Van;Vissenberg, M.C.J.M.;Zwart, S.T. De
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.927-930
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    • 2004
  • We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

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