• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.185-186
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• 2005

Intrinsic gettering is usually used to improve wafer quality which is an important factor for reliable ULSI devices. The two-step annealing method was adopted in order to investigate interactions between oxygens and secondary defects during oxygen precipitation process in lightly and heavily boron doped silicon wafers with high energy $^{11}B^+$ ion implantation. Secondary defects were inspected nearby the projected range by high resolution transmission electron microscopy. Oxygen pileup was measured in the vicinity of the projected range by secondary ion mass spectrometry for heavily boron doped silicon wafers.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1609-1611
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• 2001

A large cross-section pulsed electron beam generator of cold cathode type has been developed for industrial applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. The conventional electron beam generators need an electron scanning beam because the small cross section thermal electron emitter is used. The electron beam of large cross-section pulsed electron beam generator do not need to be scanned over target material because the beam cross section is large by 300$cm^2$. We have fabricated the large cross-sectional pulsed electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large area electron beam in the air. The electron beam current has been investigated as a function of accelerating voltage, glow discharge current, helium pressure, distance from the exit window and radial distribution in front of the exit window.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2170-2172
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• 1999

A low energy large aperture(LELA) pulsed electron beam generator of a cold cathode type has been developed for environmental applications, for example, waste water cleaning, flue gas cleaning, and pasteurization etc. The operational principle is based on the emission of secondary electrons from cold cathode when ions in the plasma hit the cathode, which are accelerated toward exit window by the gradient of an electric potential. We have fabricated the LELA electron beam generator with the peak energy of 200keV and beam diameter of 200mm and obtained the large aperture electron beam in air. The electron beam current density has been investigated as a function of glow discharge current, accelerating voltage and radial distribution in front of the exit window foil. The plasma density and electron temperature have been measured in order to confirm the relation with the electron beam current density. We are going to upgrade the LELA electron beam generator in the electron energy, electron beam current and stability of operation for various applications.

• Journal of radiological science and technology
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• v.1 no.1
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• pp.31-35
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• 1978

X-rays contribute to electron emission from material surfaces primarily through photoelectric interaction. A simple model is described for predicting the yield and energy spectrum of photon and Auger electrons emitted from materials exposed to X-ray with low energy. In this paper, We have calculated the yield of primary, Auger, and secondary, electrons. The results of the photoelectric yield model developed here suggests that. I) The angular distribution of emitted electrons(Per unit angle) is proportional to $sin{\theta}\;cos{\theta}$ for all electron energies and all components(Primary, Auger, or Secondary) II) The shape of the energy spectrum of the photoelectric yield is independent of angle. III) For this targets the forward and backward photoelectric yields are indentical.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1255-1257
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• 2005

The increase of secondary electron-emitting coefficient is effective to reduce the discharge voltage as well as to improve the luminance efficiency of PDP. We investigated the properties of ${\gamma}$ with composition and different dielectric constants, and the microstructure of dielectric after ion collision. As a result the dielectric of PbO system showed higher ${\gamma}$ compared with Pb-free system. However, there was no difference in ${\gamma}$ when the MgO protective layer was covered.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.799-801
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• 2003

The secondary electron emission $coefficient({\bullet})$ of vacuum annealed MgO films has been investigated by ${\bullet}$ -focused ion beam(${\bullet}$ -FIB) system. The vacuum annealed MgO films have been found to have higher ${\bullet}$ values than those for as-deposited MgO films for Ne+ ion. Also it is found that the ${\bullet}$ for air-hold of vacuum annealed MgO layers for 24-hours is similar to that for vacuum annealed MgO films without any air-hold.

• Journal of the Korean Electrochemical Society
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• v.11 no.1
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• pp.37-41
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• 2008

The effects of carbon-coated silicon anode on the electrochemical properties and structural change were investigated. The carbon-coated silicon powders have been prepared by thermal decomposition under argon/10wt% propylene mixed gas flow at $700^{\circ}C$. The surface and crystal structure of the synthesized materials were examined by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy. Lithium cells with electrodes made from the uncoated and the carbon coated silicon anode were assembled and tested. The carbon-coated silicon particles merged together well after the insertion/extraction of lithium ions, and showed a relatively low irreversible capacity compared with the uncoated silicon particle.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.232-236
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• 2015

The electro-optical characteristics of several functional layers over the MgO protective layer were studied during the continuous discharge of an AC-PDP. In order to observe the degradation of each functional layer on the MgO protection layer, we measured the surface morphology, cathodoluminescence (CL) spectrum, the secondary electron emission coefficient (${\gamma}$) and the discharge characteristics after 500 hours of discharge during the operation of the AC-PDP.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.220-223
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• 2007

The key role of MgO is well recognized in PDP's technology. During manufacturing, significant contamination of the oxide occurs. Getters can compete against the impurities sorption speed of the oxide layer. The analysis of the impact of a suitable getter configuration on the operational parameters of PDP's is the final goal of this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.432-435
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• 1997

In AC PDP, electrodes are covered with dielectric layer and the discharge is formed on the surface of the dielectric layer. MgO protection layer on the dielectric layer in PDP prevents a dielectric layer from sputtering and lowers the firing voltage due to a large secondary electron emission yield( ${\gamma}$ ). Until now, the MgO protection layer is mainly prepared by E-beam evaporation. However, there are some problems that is easy pollution and change of its characteristics with time and delamination. Therefore, in this study, MgO protection layer is prepared on dielectric layer by reactive R.F. magnetron sputtering with MgO target. Discharge characteristics and secondary electron emission coefficients of PDP are studied as a parameter of preparation conditions. Discharge voltage characteristics of the prepared MgO layer can be stable and improved by the annealing process in vacuum chamber.