• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.29.1-29.1
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• 2009

Fabrication of good quality P-type GaN remained as a challenge for many years which hindered the III-V nitrides from yielding visible light emitting devices. Firstly Amano et al succeeded in obtaining P-type GaN films using Mg doping and post Low Energy Electron Beam Irradiation (LEEBI) treatment. However only few region of the P-GaN was activated by LEEBI treatment. Later Nakamura et al succeeded in producing good quality P-GaN by thermal annealing method in which the as deposited P-GaN samples were annealed in N2 ambient at temperatures above $600^{\circ}C$. The carrier concentration of N type and P-type GaN differs by one order which have a major effect in AlGaN based deep UV-LED fabrication. So increasing the P-type GaN concentration becomes necessary. In this study we have proposed a novel method of activating P-type GaN by electrochemical potentiostatic method. Hydrogen bond in the Mg-H complexes of the P-type GaN is removed by electrochemical reaction using KOH solution as an electrolyte solution. Full structure LED sample grown by MOCVD serves as anode and platinum electrode serves as cathode. Experiments are performed by varying KOH concentration, process time and applied voltage. Secondary Ion Mass Spectroscopy (SIMS) analysis is performed to determine the hydrogen concentration in the P-GaN sample activated by annealing and electrochemical method. Results suggest that the hydrogen concentration is lesser in P-GaN sample activated by electrochemical method than conventional annealing method. The output power of the LED is also enhanced for full structure samples with electrochemical activated P-GaN. Thus we propose an efficient method for P-GaN activation by electrochemical reaction. 30% improvement in light output is obtained by electrochemical activation method.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2410-2414
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• 2020

Heavy ions have a high potential for destroying deep tumors that carry the highest dose at the peak of Bragg. The peak caused by a single-energy carbon beam is too narrow, which requires special measures for improvement. Here, carbon-12 (¹²C) ion with different energies has been used as a source for calculating the dose distribution in the water phantom, soft tissue and bone by the code of Monte Carlobased FLUKA code. By increasing the energy of the initial beam, the amount of absorbed dose at Bragg peak in all three targets decreased, but the trend for this reduction was less severe in bone. While the maximum absorbed dose per bone-mass unit in energy of 200 MeV/u was about 30% less than the maximum absorbed dose per unit mass of water or soft tissue, it was merely 2.4% less than soft tissue in 400 MeV/u. The simulation result showed a good agreement with experimental data at GSI Darmstadt facility of biophysics group by 0.15 cm average accuracy in Bragg peak positioning. From 200 to 400 MeV/u incident energy, the Bragg peak location increased about 18 cm in soft tissue. Correspondingly, the bone and soft tissue revealed a reduction dose ratio by 2.9 and 1.9. Induced neutrons did not contribute more than 1.8% to the total energy deposited in the water phantom. Also during ¹²C ion bombardment, secondary fragments showed 76% and 24% of primary 200 and 400 MeV/u, respectively, were present at the Bragg-peak position. The combined treatment of carbon ions with neutron or electron beams may be more effective in local dose delivery and also treating malignant tumors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.41-43
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• 1999

Among the feffoelectric thin films that have been widely investigated for ferroelectric random access memory (FRAM) applications, SrBi$_2$Ta$_2$$O_{9}$ thin film is appropriate to memory capacitor materials for its excellent fatigue endurance. However, very few studies on etch properties of SBT thin film have been reported although dry etching is an area that demands a great deal of attention in the very large scale integrations. In this study, the a SrBi$_2$Ta$_2$$O_{9}$ thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$ plasma. Etch properties, such as etch rate, selectivity, and etched profile, were measured according to gas mixing ratio of CHF$_3$(Ar$_{7}$+CHF$_3$) and the other process conditions were fixed at RF power of 600 W, dc bias voltage of 150 V, chamber pressure of 10 mTorr. Maximum etch rate of SBT thin films was 1750 A77in, under CHF$_3$(Ar+CHF$_3$) of 0.1. The selectivities of SBT to Pt and PR were 1.35 and 0.94 respectively. The chemical reaction of etched surface were investigated by X-ray photoelectron spectroscopy (XPS) analysis. The Sr and Ta atoms of SBT film react with fluorine and then Sr-F and Ta-F were removed by the physical sputtering of Ar ion. The surface of etched SBT film with CHF$_3$(Ar+CHF$_3$) of 0.1 was analyzed by secondary ion mass spectrometer (SIMS). Scanning electron microscopy (SEM) was used for examination of etched profile of SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85˚.85˚.˚.

• Journal of the Korean Electrochemical Society
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• v.14 no.1
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• pp.33-37
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• 2011

$Li_4Ti_5O_{12}$ has been considered a potential material for high power lithium batteries. Since $Li_4Ti_5O_{12}$ is however an insulator having a broad band gap, various methods have been employed to improve the conductivity. In this study, we have investigated the change of fine structure and electronic structure by Cr doping using X-ray absorption spectroscopy and First Principle Calculation. Doping with Cr, we could obtain an enhanced electronic conductivity by locating the Fermi level at the center position of Cr d-band and identify the change of XANES pre-edge and white line peak due to the increase of electron density of Ti d-band.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.111-111
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• 2007

Further scaling the semiconductor devices down to low dozens of nanometer needs the extremely shallow depth in junction and the intentional counter-doping in the silicon gate. Conventional ion beam ion implantation has some disadvantages and limitations for the future applications. In order to solve them, therefore, plasma source ion implantation technique has been considered as a promising new method for the high throughputs at low energy and the fabrication of the ultra-shallow junctions. In this paper, we study about the effects of DC bias and base pressure as a process parameter. The diluted mixture gas (5% $PH_3/H_2$) was used as a precursor source and chamber is used for vacuum pressure conditions. After ion doping into the Si wafer(100), the samples were annealed via rapid thermal annealing, of which annealed temperature ranges above the $950^{\circ}C$. The junction depth, calculated at dose level of $1{\times}10^{18}/cm^3$, was measured by secondary ion mass spectroscopy(SIMS) and sheet resistance by contact and non-contact mode. Surface morphology of samples was analyzed by scanning electron microscopy. As a result, we could accomplish the process conditions better than in advance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.200-201
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• 2007

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1999.04a
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• pp.149-156
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• 1999

In the United States (U.S.), the monitored natural attenuation (MNA) approach has been used as an alternative remedial option for organic and inorganic compounds retained in soil and dissolved in groundwater. The U.S. Environmental Protection Agency (EPA) defines the MNA as“in-situ naturally-occurring processes include biodegradation, diffusion, dilution, sorption, volatilization, and/or chemical and biochemical stabilization of contaminants and reduce contaminant toxicity, mobility or volume to the levels that are protective of human health and the environment”. The Department of Soil Environment. National Institute Environmental Research (NIER) is in the process for demonstrating the MNA approach as a potential remedial option for the BTEX contaminated site in Uiwang City. The project is charactering the research site in terms of the nature and extend of contamination, biological degradation rate, and geochemical and hydrological properties. The microbial-degradation rate and effectiveness of nutrient and redox supplements will be determined through laboratory batch and column tests. The geochemical process will be monitored for determining the concentration changes of chemical species involved in the electron transfer processes that include methanogenesis, sulfate and iron reduction, denitrification, and aerobic respiration. Through field works, critical soil and hydrogeologic parameters will be acquired to simulate the effects of dispersion, advection, sorption, and biodegradation on the fate and transport of the dissolved-phase BTEX plume using Bioplume III model. The objectives of this multi-years research project are (1) to evaluate the MNA approach using the BTEX contaminated site in Uiwang City, (2) to establish a standard protocol for future application of the approach, (3) to investigate applicability of the passive approach as a secondary treatment remedy after active treatments. In this presentation, the overall picture and philosophy behind the MNA approach will be reviewed. Detailed discussions of the site characterization/monitoring plans and risk-based decision-making processes for the demonstration site will be included.

• The Plant Pathology Journal
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• v.32 no.5
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• pp.396-406
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• 2016

Continuous supplementation of mineral nutrients and salicylic acid (SA) as foliar application could improve efficacy in controlling basal stem rot (BSR) disease in oil palm seedling. It is revealed from the results that the highest disease severity index (58.3%) was recorded in T8 treatments at 9 months after inoculation. The best disease control was achieved by T7 treatments (calcium/copper/SA [Ca/Cu/SA]) (5.0%) followed by T1 (5.5%), T5 (5.8%), T3 (8.3%), T6 (8.3%), T4 (13.3%), and T2 (15.8%) treatments. Continuous supplementation of Ca/Cu/SA was found to be the most effective in controlling the disease and the high performance liquid chromatography results showed the detection of ergosterol at very low concentration in the treated samples. Moreover, the transmission electron microscopy analysis results clearly indicated that T7 treatment was also enhancing lignification, which was responsible for the thickness of the secondary cell walls and middle lamella compared to untreated samples. It was therefore, concluded that continuous supplementation of minerals nutrients and SA could effectively suppress disease severity by reducing ergosterol activity and also improve the process of lignification in the treated plants. Furthermore, this treatment also managed to delay the onset of BSR symptoms and promote the growth of the seedlings and eventually suppress the BSR disease.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.101-101
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• 2010

ZnO shows a direct band gap of 3.37eV, large exciton binding energy (~60 meV), high oxidation ability, high sensitivity to many gases, and low cost, and it has been used in various applications such as transparent electrodes, light emitting diodes (LEDs), gas sensors and photocatalysts. Among these applications ZnO as photocatalyst has considerably attracted attention over the past few years because of its high activities in removing organic contaminants generated from industrial activities. In this research, ZnO nanoparticles were synthesized by spray-pyrolysis method using the zinc acetate dihydrate as starting material at synthesis temperature of $900^{\circ}C$ with concentration varied from 0.01 to 1.0M. The physical and chemical properties of the synthesized ZnO nanoparticles were examined by X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), Fourier Transformation Infrared (FT-IR), and UV-vis spectroscopy. The Miller indices of XRD patterns indicate that the synthesized ZnO nanoparticles showed a hexagonal wurtzite structure. With increased precursor concentration, a primary, secondary particle sizes of ZnO nanoparticles increased by 0.8 to $1.5{\mu}m$ and 15 to 35nm, and their crystallinity was improved. Methyleneblue (MB) solution ($1{\mu}M$) as a test comtaminant was prepared for evaluating the photocatalytic activities of ZnO nanoparticles synthesized in different precursor concentration. The results show that the photocatalytic efficiency of ZnO nanoparticles was gradually enhanced by increased precursor concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.397-397
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• 2010

Bone is considered as hierarchically organized biocomposites of organic (collagen) and inorganic (hydroxyapatite) materials. The precise structural dependence between hydroxyapatite (HAp, $Ca_{10}(PO_4)_6(OH)_2)$ crystals and collagen fibril is critical to unique characteristics of bone. To meet those conditions and obtain optimal properties, it is essential to understand and control the initial growth mechanisms of hydroxyapatite at the molecular level, such as other nano-structured materials. In this study, collagen fibrils were prepared by adsorbing native type I collagen molecules onto hydrophobic surface. Hydrophobicity was introduced on the Si wafer surface by using PECVD (plasma enhanced chemical vapor deposition) method and cyclohexane as a precursor. Biomimetic nucleation and growth of HAp on the self-assembled collagen nanofibrils were occurred through incubation of the sample in SBF (simulated body fluid). Chemical and morphological evolution of HAp nanocrystals was investigated by surface-sensitive analytical techniques such as ToF-SIMS (Time-of-Flight Secondary Ion Mass Spectrometry) and AFM (Atomic Force Microscopy) in the early growth stages (< 24 hrs). The very initial stages (< 12 hrs) of mineralization could be clearly demonstrated by ToF-SIMS chemical mapping of surface. In addition to ToF-SIMS and AFM measurement, scanning electron microscopy, energy dispersive spectroscopy and X-ray diffraction analysis were conducted to characterize the HAp layer in the late stages. This study is of great importance in the growth of real bone-like materials with a structure analogous to that of natural bones and the development of biomimetic nanomaterials.