• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.6
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• pp.504-509
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• 2011

The conducting current of non-uniform plasma immersed electrode consists of ion current and secondary electron emission current caused by the impinging ion current. The ion current is determined by the ion dose passing through the sheath in front of electrode and the ion distribution in front of the electrode plays an important role in the secondary electron emission. The investigation of the distributed plasma and secondary electron effect on electrode ion current was carried out as the stainless steel electrode plugged with quartz tube was immersed in the inductively coupled Ar plasma using the antenna powered by 1 kw and the density profile was measured. After that, the negative voltage was applied by 1 kV~6 kV to measure the conduction current for the analysis of ion current.

• Journal of Korean Society on Water Environment
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• v.20 no.4
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• pp.376-381
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• 2004

The use of electron beam irradiation was investigated to disinfect total coliforms in the secondary sewage treatment effluent. Unchlorinated secondary effluent was irradiated at different dose of 0.2~1.0 kGy by 1 MeV, ELV-4 Model electron beam accelerator. It is interesting to note that a 100 % reduction in total coliforms and total colonies were achieved until a dose of approximately 0.8 kGy. Even at low dose of 0.2 kGy, the total coliforms and total colonies were successfully inactivated to the level of satisfying the new effluent discharge guideline. Besides disinfection of total coliforms, approximately a 50% removal in biochemical oxygen demand was pronounced at a dose of 0.2 kGy. More than 20 % removal in suspended solids and turbidity was also observed at a dose of 1.0 kGy. The application of electron beam irradiation appeared to be one of options to reuse sewage treatment effluent as agricultural or industrial water.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.4
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• pp.185-189
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• 2004

The temporal variation of a secondary electron emission coefficient (${\gamma}$ coefficient) of hydrogenated amorphous silicon (a-Si:H) was investigated in a dc silane plasma. Estimated ${\gamma}$ coefficients have a value of 2.73 ${\times}$ 10$^{-2}$ on the pure aluminum electrode and 1.5 ${\times}$ 10$^{-3}$ after 2 hours deposition of -Si:H thin films on a cathode. It showed an abrupt decrease for about 30 minutes before saturation. The variation of the ${\gamma}$ coefficient was estimated as a function of the thin film thickness, and the film thickness was about 80 nm after 30 minutes deposition time. These results are compared with the results of a computer simulation for ion penetration into a cathode.

• Journal of Korean Vacuum Science & Technology
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• v.5 no.1
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• pp.7-10
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• 2001

Ion induced secondary electron emission coefficients γ of protecting layers of an AC plasma display panel(AC-PDP) have been measured. In order to solve the surface charging effect during the measurement at insulating samples like MgO, a new method with the patterned gold line charge neutralization has been introduced. The measurement was performed at the samples, MgO and MgO+MgF$_2$, which showed a great difference in the firing voltage between the two protecting layers. The γ value has been compared with the firing voltage Vf of the AC-PDP with the same protecting layer. Correct relationship between γ and Vf has been observed. Thus, the patterned gold line method has been proven to be successful for the measurement of the secondary electron emission yield at insulator sample surfaces.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1445-1447
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• 2008

Micro crystal structure of polycrystalline MgO film is controlled by adjusting the energy of particles arrived at the substrate during deposition. The change of crystal structure affects on the total area of (200) surface where the oxygen vacancies are formed easily, resulting in the change of secondary electron emission (SEE) coefficient($\gamma$).

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.802-805
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• 2003

The ion-induced secondary electron emission coefficient ${\gamma}$ for MgO thin film with $O_{2}$ plasma treatment has been investigated by ${\gamma}$-FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ than that without $O_{2}$ plasma treatment. The energy of $Ne^{+}$ ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_{2}$ plasma treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.221-223
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• 2002

We have measured the secondary electron emission yield ${\gamma}_i$ from MgO films deposited on $SiO_2/Si$ for low energy noble ions. A pulsed ion beam technique was employed in order to suppress the surface charging effect during the measurement. From the measurement of the ion - induced secondary electron emission coefficients ${\gamma}_i$ for 5 noble ions with energies ranging from 50 eV to 225 eV, it was shown that, with increasing the kinetic energies of the incident ions, the ${\gamma}_i$ increased

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.736-739
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• 2009

We have studied that the secondary electron emission characteristics of functional layers which have different kinds of MgO sub-micrometer size powder in AC-PDP. We used cathodoluminescence(CL) and gamma focused ion beam (${\gamma}$-FIB) system for measurement of secondary electron emission characteristics. Also we made 6 inch test panel which applied functional layers for evaluation of discharge characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.507-510
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• 2004

Oblique ion-induced secondary electron emission coefficient(${\gamma}$) with low energy ..and work function ${\phi}_{\omega}$(${\theta}$ = 0 and ${\theta}$ = 20) of the MgO thin film in AC-PDPs has been measured by ${\gamma}$-FIB system. The MgO thin film has been deposited from sintered material under electron beam evaporation method. The energy of $He^+$ ions used has been ranged from 50eV to 150eV. Oblique ion beam has been chosen to be 10 degree, 20 degree and 30 degree. It is found that the higher secondary electron emission coefficient(${\gamma}$) has been achieved by the higher oblique ion beam up to inclination angle of 30 degree than the perpendicular incident ion beam.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1384-1387
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• 2007

We have investigated the sputtering and secondary electron emission characteristics of MgO protective layer according to the $O_2$ partial pressure. The MgO layer have been deposited by electron beam evaporation method and have varied the $O_2$ partial pressure as 0, $5.2{\times}10^{-5}$, $1.0{\times}10^{-4}$, and $4.1{\times}10^{-4}$ Torr. It has been known that the secondary electron emission coefficient and the number of defect energy levels increased as the $O_2$ partial pressure increases. So we have investigated the property of sputtering yield according to the $O_2$ partial pressure. We have known that the sputtering yield deceases as the $O_2$ partial pressure increases by using the FIB system.