• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2005.05a
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• pp.9-14
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• 2005

The nature of the signals collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired image is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important in pulling up the resolution of SEM This study presents the secondary electron detector for use in scanning electron microscope, electric circuit and I/V conversion circuit for driving that detector.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.17 no.4
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• pp.15-21
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• 2008

Secondary electron detectors used in scanning electron microscope accept secondary electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. In order to acquire images with good qualities, as many secondary electrons as possible should be reached to the detector. To realize this it is very important to select an appropriate mounting position and angle of the detector inside the chamber of scanning electron microscope. In this paper, a number of numerical simulations are performed to explore the relationships between detection rates of secondary electrons and the values of some parameters, such as distances between the detector and sample, relative mounting positions of scintillator positioned inside the detector with respect to detector cover, two types of mounting angles of the detector. The relationships between detection rates and applied voltages to corona ring and faraday cage, and energies of secondary electrons are investigated as well.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.04a
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• pp.513-517
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• 2004

The nature of the signals collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired image is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important in pulling up the resolution of SEM. In this article, electron beam-specimen interactions, the detection principle of secondary electrons and backscattered electrons, and the structure of a conventional detector are described. The structure of an experimental apparatus for the future study on our hopeful novel electron detector is presented as well.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.4
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• pp.53-60
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• 2008

Electron detectors used in scanning electron microscope accept electrons emitted from the specimen and convert them to an electrical signal that, after amplification, is used to modulate the gray-level intensities on a cathode ray tube, producing an image of the specimen. Electron detector is one of the key components dominating the performance of scanning electron microscope so that the development of electron detectors having high performance is indispensable to acquire high quality images using scanning electron microscope. In this paper, we designed and manufactured an electron detector and conducted a couple of image capture experiments using it. In particular, scintillator which generates light photons when it is struck by high-energy electrons was manufactured and experimental studies on the optimization of manufacturing condition was carried out. From experiments to evaluate the performance of our detector, it was verified that the performance of our detector is equivalent to or better than that of the conventional one.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1282-1287
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• 2007

The nature of the signal collected by an SEM(Scanning Electron Microscope) in order to form images are all dependent on the detector used to collect them, and the quality of an acquired images is strongly influenced by detector performance. Therefore, the development of detector with high performance is very important for improving on the resolution of SEM. This paper presents the manufacture of secondary electron detector and the optimal position of electron detector through numerical analysis in SEM.

• Journal of the Korean Society for Precision Engineering
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• v.29 no.5
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• pp.554-562
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• 2012

Processing of Scanning electron microscope imaging has been analyzed in both secondary electron (SE) imaging and backscattered electron (BSE) image. Because of unique characteristics of both secondary electron and backscattered electron image, mechanism of imaging process and image quality are quite different each other. For the sake of characterize imaging process, Monte Carlo simulation code have been developed. It simulates electron penetration and depth profile in certain material. In addition, secondary electron and backscattered electron generation process as well as their spatial distribution and energy characteristics can be simulated. Geometries that has fundamental feature have been imaged using the developed Monte Carlo code. Two, SE and BSE images generation process will be discussed. BSE imaging process can be readily used to discriminate in both material and geometry by simply changing position and direction of BSE detector. The developed MC code could be useful to design BSE detector and their position. Furthermore, surface reconstruction technique is possibly developed at the further research efforts. Basics of Monte Carlo simulation method will be discussed as well as characteristics of SE and BSE images.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2006.10a
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• pp.505-506
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• 2006

• Journal of Radiation Protection and Research
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• v.26 no.3
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• pp.177-181
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• 2001

The conversion efficiency of a cesium iodine coated micro-channel plate is studied. We use the EGS4 code to transport photons and generated electrons until their energies become less than 1keV and 10keV respectively. Among the generated electrons, the emission from the secondary electrons located within the escape depth of 56nm from the photo-converter boundary is estimated by integrating the product of the secondary electrons with a probability depending only on their geometric locations. The secondary electron emission from the generated electrons of energy higher than 100eV is estimated by the 'universal yield curve'. The sum of these provides an estimate for the secondary electron yield and we show that results of applying this algorithm agree with known experimental results. Using this algorithm, we computed secondary electron emissions from a micro-channel plate used in a gas electron multiplier detector that is currently being developed at Korea Atomic Energy Research Institute.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.621-622
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• 2008

• Laser Solutions
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• v.12 no.2
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• pp.26-30
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• 2009

Scanning Electron Microscopy (SEM) includes high voltage generator, electron gun, column, secondary electron detector, scan coil system and image grabber. Column includes electron lenses (condenser lens and objective lens). Condenser lens generates fringe field, makes focal length and control spot size. Focal length represents property of lens. Objective lens control focus. Most of the electrons emitted from the filament, are captured by the anode. The portion of the electron current that leaves the gun through the hole in the anode is called the beam current. Electron beam probe is called the focused beam on the specimen. Because of the lens and aperture, the probe current becomes smaller than the beam current. It generate various signals(backscattered electron, secondary electron) in an interaction with the specimen atoms. In this paper, we describe the result of research to develop the core elements for low-resolution SEM.