• 대한전자공학회논문지
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• 제27권12호
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• pp.1900-1905
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• 1990

In this study, the thermal neutron effects on optical fiber are examined theoretically. Also, the induced loss by thermal neutron irradiation in optical fibers is measured at the optical wavelengths of 0.85 and 1.3\ulcorner, respectively, and the results are analyzed. Thermal neutrons cause nuclear reaction with fiber compositions. So secondary ionizing radiations of high energy are generated. Color centers formed by these secondary ionizing rasiations increase transmission loss of optical fiber by absorbing propagating light in fiber core. As a result of experiment, owing to Ge, P, and B doping effects, the induced loss in multimode fibers has been 5 tmes larger than that in single mode fibers at 1.3 \ulcorner wavelengh. In case of multimode fibers, the loss at 0.8 \ulcorner wavelength region more suceptible for radiations has been twice higher than at 1.3\ulcorner.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.136-136
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• 2003

In fiber optic networks, system size and cost can be significantly reduced by development of optical components through planar optical waveguides. One important step to realize the compact optical devices is to develop planar optical amplifier to compensate the losses in splitter or other components. Planar amplifier provides optical gain in devices less than tens of centimeters long, as opposed to fiber amplifiers with lengths of typically tens of meters. To achieve the same amount of gain between the planar and fiber optical amplifier, much higher Er doping levels responsible for the gain than in the fiber amplifier are required due to the reduced path length. These doping must be done without the loss of homogeniety to minimize Er ion-ion interactions which reduce gain by co-operative upconversion. Sol-gel process has become a feasible method to allow the incorporation of Er ion concentrations higher than conventional glass melting methods. In this work, Er-doped $SiO_2$-A1$_2$ $O_3$ films were prepared by two different method via sol -Eel process. Tetraethylorthosilicate(TEOS)/aluminum secondary butoxide [Al (OC$_4$ $H_{9}$)$_3$], methacryloxypropylcnethoxysaane(MPTS)/aluminum secondary butofde [Al(OC$_4$ $H_{9}$)$_3$] systems were used as starting materials for hosting Er ions. Er-doped $SiO_2$-A1$_2$ $O_3$ films obtahed after heat-treating, coatings on Si substrate were characterized by X-ray din action, FT-IR, and N-IR fluorescence spectroscopy. The luminescence properties for two different processing procedure will be compared and discussed from peak intensity and life time.

• 분석과학
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• 제13권6호
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• pp.705-711
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• 2000

리튬 이차전지용 부극 재료로 페놀 수지로 부터 유도된 boron을 doping한 polyacene에 구조적 특성, 표면 특성 및 전기적 특성을 연구하였다. Polyacene탄소질에 boron의 함유량을 각각 5%, 10%, 15%, 20% 첨가하여 특성화하였다. X-선 회절 결과에 따르면, 이들 시료들은 대표적인 무정형 탄소의 회절형태를 나타내었다. 표면 상태는 반구형의 표면상태를 가지고 있음을 SEM 결과로부터 알 수 있었다. 전지의 이온과 전자전달효과를 알아보기 위한 전기 화학적 충전/방전 특성과 임피던스 측정의 결과에 의하면, 10%와 15% boron이 첨가된 시료는 다소 우수한 특성을 나타내고 있다.

• Korean Chemical Engineering Research
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• 제55권6호
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• pp.861-867
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• 2017

니켈 함량이 높은 리튬이차전지용 NCA 양극소재의 용량 및 수명특성을 향상시키기 위하여 붕소와 코발트를 상업용 $Li_{1.06}Ni_{0.91}Co_{0.08}Al_{0.01}O_2$ (NCA)에 도핑하여 리튬이차전지의 양극소재로 사용하였다. 상업용 NCA 양극소재는 약 $5{\mu}m$와 $12{\mu}m$ 크기의 2차 입자들이 혼합되어 있고 붕소와 코발트 도핑후 입자크기는 조금 감소되었다. 붕소와 코발트를 도핑한 NCA-B와 NCA-Co의 초기 방전용량은 각각 214 mAh/g과 200 mAh/g으로 도핑하지 않은 NCA에 비해 높게 나타났으며, 특히 NCA-Co는 20번째의 방전용량이 157 mAh/g으로 가장 우수한 방전용량특성을 나타내었다. 이는 코발트를 도핑함으로써 c축 방향으로의 결정이 성장되어 리튬이온의 확산이 용이하기 때문이다.

• 한국재료학회지
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• 제29권3호
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• pp.150-154
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• 2019

This study investigates the effect of MnO2 and CuO as acceptor additives on the microstructure and piezoelectric properties of $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$, which has a rhombohedral-tetragonal phase boundary composition. $MnO_2$ and CuO-added $0.96(K_{0.5}Na_{0.5})_{0.95}Li_{0.05}Nb_{0.93}Sb_{0.07}O_3-0.04BaZrO_3$ ceramics sintered at a relatively low temperature of $1020^{\circ}C$ show a pure perovskite phase with no secondary phase. As the addition of $MnO_2$ and CuO increases, the sintered density and grain size of the resulting ceramics increases. Due to the difference in the amount of oxygen vacancies produced by B-site substitution, Cu ion doping is more effective for uniform grain growth than Mn ion doping. The formation of oxygen vacancies due to B-site substitution of Cu or Mn ions results in a hardening effect via ferroelectric domain pinning, leading to a reduction in the piezoelectric charge coefficient and improvement of the mechanical quality factor. For the same amount of additive, the addition of CuO is more advantageous for obtaining a high mechanical quality factor than the addition of $MnO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.294-294
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• 2007

Spinel cathode material $LiMn_2O_4$ is currently studied as a promising cathode material for lithium ion secondary batteries for future applications because of it is low cost, easy to be prepared and capable to be operated in high voltage range. However as a cathode material, $LiMn_2O_4$ performs a poor capacity retention which leads to short cycle life. In this study, stoichiometric $LiMn_2O_4$ was synthesized with granulation method with ion substitution to stabilize its structure and niobium doping to improve its conductivity. These well-mixed powders were calcined at $850^{\circ}C$ for 6 hours and its properties were investigated. Correlations of dopant and electrochemical properties were examined as well.

• 전기화학회지
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• 제17권3호
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• pp.149-155
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• 2014

본 연구에서는 리튬 이차전지의 양극 재료인 $Li[Ni_{0.575}Co_{0.1}Mn_{0.325}]O_2$를 공침법(Co-precipitation)으로 전구체를 합성 하였고, 철(Fe)을 도핑 함으로써 양극 활물질을 합성하였다. 합성된 양극 활물질을 시차주사현미경 (SEM, Scanning electron microscope)과 X선-회절분석(XRD, X-ray diffraction)으로 분석하였다. X선-회절분석 결과 철(Fe)을 도핑 함으로써 a축과 c축이 증가하였고, $I_{(003)}/I_{(104)}$의 비가 증가하는 것과 $I_{(006)}+I_{(102)}/I_{(101)}$비가 작아지는 것을 통해 구조적 안정성이 증가하는 것을 확인했다. 전기화학적 특성 측정 결과 사이클 특성이 향상되었고, 임피던스 측정 결과 전하 이동 저항($R_{ct}$) 값이 낮아짐을 통해 전기화학적 분석 결과에서도 철(Fe)을 도핑 하였을 때 개선 된 특성을 나타내었다. 특히, 고온 조건에서 사이클 특성이 개선되는 것을 확인 하였는데, 이는 구조적 안정성이 사이클 특성에 기여하였기 때문이다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1685-1687
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• 1996

Recently, conducting polymer has been much attracted as novel materials because of its electronic behavior and functional application by doping process. In this paper, we electrochemically synthesized polyaniline films under potential sweep conditions, which exhibit high electric conductivity about 200 S/cm. Specific energy of 600 Wh/kg and Ah efficiency 98% were achieved during the charge/discharge cycling using liquid electrolyte system. On the other hand, consequences of the cycling were 260 Wh/kg and 95% Ah efficiency using polyethylene oxide(PEO) based solid-state electrolyte system.

• 한국전기전자재료학회논문지
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• 제15권2호
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• pp.178-183
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• 2002

The effects of Dy$_2$O$_3$and Er$_2$O$_3$addition on the electromagnetic properties of Mn-Zn ferrite were investigated in the doping concentration range from 0.05 wt% to 0.25 wt%. All samples were prepared by standard fabrication of ferrite ceramics. The XRD patterns of sample were observed spinel and secondary phase. The densities of sample were showed nearly constant values. As the increased additive, electrical resistivity, initial permeability and real component of the series complex permeability increased with setting limits each other. Excess doped with Dy$_2$O$_3$ and Er$_2$O$_3$, those values decreased. The maximum electrical resistivity was observed with 0.15 we% and initial permeability was observed with 0.05 wt%. Magnetic loss decreased with additive and then increased in proportion to increased.

• 한국전기전자재료학회논문지
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• 제13권2호
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• pp.125-130
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• 2000

Two step growth of reduced pressure chemical vapor eposition has been successfully developed to achieve in-situ phosphorus-doped silicon epilayers, and the characteristic evolution on their microstructures has been investigated using scanning electron microscopy, transmission electron microscopy, and secondary ion mass spectroscopy. The two step growth, which employs heavily in-situ P doped silicon buffer layer grown at low temperature, proposes crucial advantages in manipulating crystal structures of in-situ phosphorus doped silicon. In particular, our experimental results showed that with annealing of the heavily P doped silicon buffer layers, high-quality epitaxial silicon layers grew on it. the heavily doped phosphorus in buffer layers introduces into native oxide and plays an important role in promoting the dispersion of native oxides. Furthermore, the phosphorus doping concentration remains uniform depth distribution in high quality single crystalline Si films obtained by the two step growth.