• 한국재료학회지
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• 제18권2호
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• pp.61-64
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• 2008

Electrical optical switching and structural transformation of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ were studied to investigate the phase change characteristics for PRAM application. Sb-based materials were deposited by a RF magnetron co-sputtering system and the phase change characteristics were analyzed using an X-ray diffractometer (XRD), a static tester and a four-point probe. Doping Ge, Se or Si atoms reinforced the amorphous stability of the Sb-based materials, which affected the switching characteristics. The crystallization temperature of the Sb-based materials increased as the concentration of the Ge, Se or Si increased. The minimum time of $Ge_{15}Sb_{85}$, $Sb_{65}Se_{35}$ and N2.0 sccm doped $Sb_{83}Si_{17}$ for crystallization was 120, 50 and 90 ns at 12 mW, respectively. $Sb_{65}Se_{35}$ was crystallized at $170^{\circ}C$. In addition, the difference in the sheet resistances between amorphous and crystalline states was higher than $10^4{\Omega}/{\gamma}$.

• Bulletin of the Korean Chemical Society
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• 제35권12호
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• pp.3601-3608
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• 2014

RGB light emitting ZnSe based nanocrystals: ZnSe (blue), ZnSe:Cu (green) and ZnSe:Mn (red) were synthesized by capping the surface of the nanocrystals with oleic acid. The obtained nanocrystal powders were characterized by using XRD, HR-TEM, ICP-AES, FT-IR, and FT-Raman spectroscopies. The optical properties were also measured by UV/Vis and photoluminescence (PL) spectroscopies. The PL spectra showed broad emission peaks at 471 nm (ZnSe), 530 nm (ZnSe:Cu) and 665 nm (ZnSe:Mn), with relative PL efficiencies in the range of 0.7% to 5.1% compared to a reference organic dye standard. The measured average particle sizes from the HR-TEM images for those three nanocrystals were 4.5 nm on average, which were also supported well by the Debye-Scherrer calculations. The elemental compositions of the ZnSe based nanocrystals were determined by ICP-AES analyses. Finally, the drawn CIE diagram showed the color coordinates of (0.15, 0.16) for ZnSe, (0.22, 0.57) for ZnSe:Cu, and (0.62, 0.35) for ZnSe:Mn respectively, which were fairly well matched to that of the RGB color standards.

• 한국세라믹학회지
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• 제52권2호
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• pp.108-113
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• 2015

In an effort to evaluate the practicability of an imprinting technique for amorphous chalcogenide film in Ge-based compositions, we investigate the deformation behavior of the surface of amorphous $GeSe_2$ film deposited via a thermal evaporation route according to varying static loads applied at elevated temperatures. We observe that, under these static loading conditions, crystallization tends to occur on its surface relatively more easily than in As-based $As_2Se_3$ films. As for the present $GeSe_2$ film, higher processing temperatures are required in order to make its surface reflect the given stamp patterns well; however, in this case, its surface becomes partially crystallized in the monoclinic $GeSe_2$ phase. The increased vulnerability of this amorphous $GeSe_2$ film toward surface crystallization under static loading, when compared with the $As_2Se_3$ counterpart, is explained in terms of the topological aspects of its amorphous structure.

• 접착 및 계면
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• 제24권1호
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• pp.36-40
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• 2023

반데르발스 물질이란 층간 결합이 약한 반데르발스 결합으로 이루어진 이차원 층상구조를 지닌 물질을 의미하며, 이러한 반데르발스 이차원 소재를 이용한 이종접합 구조 연구는 그래핀이 발견된 이후 꾸준히 연구되고 있다. 본 논문에서는 대기압 화학기상증착법을 통해 성장된 단층 단결정 MoSe₂를 기반으로하는 반데르발스 이종접합 트랜지스터 소자에 대해 보고한다. 최적화된 공정조건에서 성장된 MoSe₂는 원자수준의 결함이 존재하지 않는 것을 밝혔으며, 이를 이용한 트랜지스터 소자 또한 우수한 특성을 보인다는 것을 밝혀내었다.

• 한국전기전자재료학회논문지
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• 제27권8호
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• pp.491-496
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• 2014

The resistive switching characteristics of resistive random access memory (ReRAM) based on amorphous $Ge_{0.5}Se_{0.5}$ thin films have been demonstrated by using Ti/Ag nanocrystals/$Ge_{0.5}Se_{0.5}$/Pt structure. Ag nanocrystals (Ag NCs) were spread on the amorphous $Ge_{0.5}Se_{0.5}$ thin film and they played the role of metal ions source. As a result, comparing the conventional Ag/$Ge_{0.5}Se_{0.5}$/Pt structure, this Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt ReRAM device exhibits the highly uniform bipolar resistive switching (BRS) characteristics, such as the operating voltages, and the resistance values. At the same time, a stable DC endurance(> 100 cycles), and the excellent data retention (> $10^4$ sec) properties were found from the Ti/Ag NCs/$Ge_{0.5}Se_{0.5}$/Pt structured ReRAM device.

• 한국재료학회지
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• 제22권5호
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• pp.259-273
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• 2012

Chalcogenide-based semiconductors, such as $CuInSe_2$, $CuGaSe_2$, Cu(In,Ga)$Se_2$ (CIGS), and CdTe have attracted considerable interest as efficient materials in thin film solar cells (TFSCs). Currently, CIGS and CdTe TFSCs have demonstrated the highest power conversion efficiency (PCE) of over 11% in module production. However, commercialized CIGS and CdTe TFSCs have some limitations due to the scarcity of In, Ga, and Te and the environmental issues associated with Cd and Se. Recently, kesterite CZTS, which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of $10^4cm^{-1}$, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTS-based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. The recent development of kesterite-based CZTS thin film solar cells is summarized in this work. The new challenges for enhanced performance in CZTS thin films are examined and prospective issues are addressed as well.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.134-137
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• 2009

Commercially available elemental powders of Cu, Zn, Sn and Se were employed for crystallizing a stannite-type $Cu_2ZnSnSe_4$ compound by means of solid state reaction. $Cu_2ZnSnSe_4$ reaction chemistry was also modeled based on differential-thermal analysis and X-ray powder diffraction results. It was observed that Se tends to react preferably with Cu to form CuSe and $CuSe_2$ phases at low reaction temperature. The formation of $Cu_5Zn_8$ intermetallic phase was found to be the intermediate reaction path for the binary ZnSe formation. A solid state reaction at $320^{\circ}C$ reacted elemental powderst obinary selenides of CuSe, ZnSe and SnSe completely. The crystallization of $Cu_2ZnSnSe_4$ was was detected to begin at $300^{\circ}C$ and its weight fraction increased with an increase of reaction temperature, which most probably formed from the reaction between $Cu_2SnSe_3$ and ZnSe.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2002년도 추계학술발표강연 및 논문개요집
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• pp.126-126
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• 2002

• 한국재료학회:학술대회논문집
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• 한국재료학회 1995년도 추계 학술발표 강연 및 논문개요집
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• pp.99-99
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• 1995

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.73-73
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• 1999