• 한국재료학회지
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• 제16권10호
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• pp.647-651
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• 2006

A new class of compounds in the form of skutterudite structure, Fe doped $CoSb_3$ with a nominal composition of $Fe_xCo_{4-x}Sb_{12}$ ($0{\leq}x{\leq}2.5$), were synthesized by mechanical alloying of elemental powders followed by vacuum hot pressing. Nanostructured, single-phase skutterudites were successfully produced by vacuum hot pressing using as-milled powders without subsequent heat-treatments for the compositions of $x{\leq}1.5$. However, second phase was found to form in case of $x{\geq}2$, suggesting the solubility limit of Fe with Co in this system. Thermoelectric properties including thermal conductivity from 300 to 600 K were measured and discussed. Lattice thermal conductivity was greatly reduced by introducing a dopant up to x=1.5 as well as by increasing phonon scattering in nanostructured skutterudite, leading to enhancement in the thermoelectric figure of merit. The maximum figure of merit was found to be 0.32 at 600 K in the composition of $Fe_xCo_{4-x}Sb_{12}$.

• Advances in nano research
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• 제13권6호
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• pp.513-525
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• 2022

In this study, it was aimed to evaluate direct oxidation of aqueous solution containing cefalexin antibiotic with new generation Sn/Sb/Ni: 500/8/1 anode. The fact that there is no such a study on treatment of cefalexin with these new anode made this study unique. According to the operating parameters evaluation COD graphs showed clearer results compared to TOC and CLX and thus, it was it was chosen as major parameter. Furthermore, pseudo-first degree kd values were calculated from CLX results to show more accurate and specific results. Experimental results showed that after 60 min of electrochemical oxidation, complete removal of COD and TOC was accomplished with 750 mg L^-1 KCl, at pH 7, 50 mA cm^-2 current density and 1 cm anode-cathode distance. Also, the stability of the Sn/Sb/Ni anode was evaluated by taking SEM and AFM images and XRD analysis before and after of electrochemical oxidation processes. According to the results, it was not occurred too much change on the anode surface even after 300 h of electrolysis. Thus, it was thought that the anode material was not corroded to a large extent. Furthermore, the removal efficiencies were very high for almost all the time and conditions. According to the results of the study, electrochemical oxidation with new generation Sn/Sb/Ni anodes for the removal of cefalexin antibiotic was found very successful and applicable due to require less reaction time complete mineralization and doesn't require pH adjustment step compared to other studies in literature. In future studies, different antibiotic types should be studied with this anode and maybe with real wastewaters to test applicability of the process in treatment of pharmaceutical wastewaters containing antibiotics, in a better way.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.307-310
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• 2000

Antimony doped tin oxide (ATO) thin films were deposited at room temperature by ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to $1500{\AA}$ or $2000{\AA}$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from $400^{\circ}C$ to $600^{\circ}C$ in flowing $O_2$ or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

• 태양에너지
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• 제18권2호
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• pp.137-144
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• 1998

분무열분해법으로 $SnO_2$ 박막을 증착하여 기판표면의 온도에 따른 방향성과 결함을 조사하였다. 기판의 온도가 $300^{\circ}C$일 때부터 결정성 박막이 증착되었다. 기판의 온도가 $400^{\circ}C$까지 증가함에 따라 (200)면이 우선적으로 성장하였으며 결정립의 크기도 증가하였다. Sb를 첨가하지 않은 박막은 Sn과 O로 구성되어 있으며 산소공위를 포함한다. Sb를 첨가한 박막은 산소공위 외에 Sn 위치와 O 위치에 각각 치환된 Sb와 Cl을 가진다.

• 한국전기전자재료학회논문지
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• 제29권4호
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• pp.205-209
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• 2016

In this paper, piezoelectric ceramics with the composition of $(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.8975}Sb_{0.065}Ta_{0.0375})O_3+0.3wt%\;CoO+x\;CuO$ ($0.005{\leq}x{\leq}0.025$) (abbreviated to NKL-NST) were fabricated for ultrasonic sensor application. The effects of CuO addition and sintering on the microstructure and the piezoelectric properties of the NKL-NST ceramics were systematically studied. Excellent piezoelectric properties such as electromchanical coupling $factor(k_p)=0.415$, piezoelectric constant $(d_{33})=166pC/N$ and piezoelectric figure of merit $d_{{33}*}g_{33}=5.47pm^2/N$ were obtained from the 2.5 mol% CuO doped NKL-NST+0.3 wt%CoO ceramics sintered at $1,000^{\circ}C$ for 3 h.

• 한국전기전자재료학회논문지
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• 제28권4호
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• pp.229-233
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• 2015

In this paper, in order to develop outstanding Pb-free piezoelectric composition ceramics, the $(Na_{0.525}K_{0.443}Li_{0.037})(Nb_{0.883}Sb_{0.08}Ta_{0.037})O_3+0.3wt%Bi_2O_3+0.4wt%Fe_2O_3+xwt%CuO$ (x= 0~0.8 wt%)(abbreviated as NKL-NST) lead-free piezoelectric ceramics have been synthesized using the ordinary solid state reaction method. The effects of CuO-doping on the structure and electrical properties of the NKL-NST ceramics were systematically studied. The results show that the ceramics exhibit a pure perovskite structure with orthorhombic phase at room temperature, and secondary phase was found in the ceramics. The 0.4 wt%CuO added ceramics sintered at $950^{\circ}C$ showed the optimum properties of piezoelectric constant($d_{33}$), planar piezoelectric coupling coefficient(kp) and mechanical quality factor(Qm) : $d_{33}=213$[pC/N], kp= 0.43, Qm= 423,respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.262-263
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• 2007

Effect of co-doping on optical and electrical properties of $SnO_2$ based thin films were studied. $SnO_2$ ceramic targets with up to 50mol% $CuSb_2O_6$ were prepared by sintering mixed-oxide compact in the temperature range of $1100^{\circ}C{\sim}1300^{\circ}C$ in air. Thin films were then deposited onto glass substrates by pulsed laser deposition where substrate temperature was maintained in the range of $500{\sim}650^{\circ}C$ with oxygen pressure of 3m~7.5mTorr and energy density of $1Jcm^{-2}$. It was found that with the increase amount of dopant, the electrical properties of thin films tended to improve with the smallest resistivity value obtained at about 8mol% doping, further increase, however, usually impaired the optical transmission in the visible range.

• 한국전기전자재료학회논문지
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• 제25권11호
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• pp.867-872
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• 2012

In this study, in order to develop excellent lead free piezoelectric ceramics for piezoelectric actuators application, $Li_{0.04}(Na_{0.50}K_{0.50})_{0.96}[(Nb_{0.86}Ta_{0.10}Sb_{0.04})_{0.994}Co_{0.015}]O_3+0.0025SrO+0.15\;wt%K_2CO_3+x\;wt%Nb_2O_5$ (x = 0 - 0.5 wt%) (abbreviated as LNKNTSCS-xN) ceramics were fabricated by a conventional sintering technique. the phase structure, microstructure and electrical properties were investigated with a emphasis on the influence of the $Nb_2O_5$ content. High electrical properties of $d_{33}$=234 pC/N, kp=0.392, ${\varepsilon}_r$=1,395, ${\rho}=4.70g/cm^3$ were obtained from the specimen with x=0.4 wt%, which suggests that the composition ceramics is a promising lead-free piezoelectric material.

• 한국전기전자재료학회논문지
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• 제27권10호
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• pp.630-634
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• 2014

$(Na_{0.525}K_{0.4425}Li_{0.0375})(Nb_{0.9975}Sb_{0.065}Ta_{0.0375})O_3+0.3 wt%CoO$ ceramics were fabricated as a function of CuO addition by traditional solid state sintering process in order to develop excellent lead-free piezoelectric ceramics composition. The addition of CuO in the LNKNTS composition ceramics can effectively enhance the densification of the ceramics, resulting in the oxygen vacancies as hardening effect. The excellent piezoelectric properties of electromechanical coupling factor($k{\small}_P$) of 0.378, piezoelectric constant($d_{33}$) of 152 pC/N were obtained from the 1.0 mol% CuO doped LNKNTS ceramics sintered at $1,020^{\circ}C$ for 3 h.

• Electronic Materials Letters
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• 제14권6호
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• pp.725-732
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• 2018

The thermoelectric and transport properties of Ti-doped FeVSb half-Heusler alloys were studied in this study. $FeV_{1-x}Ti_xSb$ (0.1 < x < 0.5) half-Heusler alloys were synthesized by mechanical alloying process and subsequent vacuum hot pressing. After vacuum hot pressing, a near singe phase with a small fraction of second phase was obtained in this experiment. Investigation of microstructure revealed that both grain and particle sizes were decreased on doping which would influence on thermal conductivity. No foreign elements pick up from the vial was seen during milling process. Thermoelectric properties were investigated as a function of temperature and doping level. The absolute value of Seebeck coefficient showed transition from negative to positive with increasing doping concentrations ($x{\geq}0.3$). Electrical conductivity, Seebeck coefficient and power factor increased with the increasing amount of Ti contents. The lattice thermal conductivity decreased considerably, possibly due to the mass disorder and grain boundary scattering. All of these turned out to increase in power factor significantly. As a result, the thermoelectric figure of merit increased comprehensively with Ti doping for this experiment, resulting in maximum thermoelectric figure of merit for $FeV_{0.7}Ti_{0.3}Sb$ at 658 K.